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Luo Z, Yu Z, Lu X, Niu W, Yu Y, Yao Y, Tian F, Tan CL, Sun H, Gao L, Qin W, Xu Y, Zhao Q, Song XX. Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices. NANO LETTERS 2024; 24:6183-6191. [PMID: 38728596 DOI: 10.1021/acs.nanolett.4c01885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Zhihao Yu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Fuguo Tian
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Xu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiang-Xiang Song
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China Suzhou 215123, China
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2
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Guo L, Hu S, Gu X, Zhang R, Wang K, Yan W, Sun X. Emerging Spintronic Materials and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301854. [PMID: 37309258 DOI: 10.1002/adma.202301854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 06/01/2023] [Indexed: 06/14/2023]
Abstract
The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Wenjing Yan
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG9 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
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3
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Luo Z, Song X, Liu X, Lu X, Yao Y, Zeng J, Li Y, He D, Zhao H, Gao L, Yu Z, Niu W, Sun H, Xu Y, Liu S, Qin W, Zhao Q. Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices. SCIENCE ADVANCES 2023; 9:eade9126. [PMID: 37018394 PMCID: PMC10075958 DOI: 10.1126/sciadv.ade9126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/03/2023] [Indexed: 06/19/2023]
Abstract
Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that organic materials host for spintronic applications. Although plenty of efforts have been devoted to studying organic spintronic devices, exploring the role of metal/molecule spinterfaces at two-dimensional limit remains challenging because of excessive disorders and traps at the interfaces. Here, we demonstrate atomically smooth metal/molecule interfaces through nondestructively transferring magnetic electrodes on epitaxial grown single-crystalline layered organic films. Using such high-quality interfaces, we investigate spin injection of spin-valve devices based on organic films of different layers, in which molecules are packed in different manners. We find that the measured magnetoresistance and the estimated spin polarization increase markedly for bilayer devices compared with their monolayer counterparts. These observations reveal the key role of molecular packing on spin polarization, which is supported by density functional theory calculations. Our findings provide promising routes toward designing spinterfaces for organic spintronic devices.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiangxiang Song
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Xiaolong Liu
- School of New Energy, North China Electric Power University, Beijing 102206, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Junpeng Zeng
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yating Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Daowei He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huijuan Zhao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Shujuan Liu
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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4
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He K, Barut B, Yin S, Randle MD, Dixit R, Arabchigavkani N, Nathawat J, Mahmood A, Echtenkamp W, Binek C, Dowben PA, Bird JP. Graphene on Chromia: A System for Beyond-Room-Temperature Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105023. [PMID: 34986269 DOI: 10.1002/adma.202105023] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Revised: 12/23/2021] [Indexed: 06/14/2023]
Abstract
Evidence of robust spin-dependent transport in monolayer graphene, deposited on the (0001) surface of the antiferromagnetic (AFM)/magneto-electric oxide chromia (Cr2 O3 ), is provided. Measurements performed in the non-local spin-Hall geometry reveal a robust signal that is present at zero external magnetic field and which is significantly larger than any possible ohmic contribution. The spin-related signal persists well beyond the Néel temperature (≈307 K) that defines the transition between the AFM and paramagnetic states, remaining visible at the highest studied temperature of close to 450 K. This robust character is consistent with prior theoretical studies of the graphene/Cr2 O3 system, predicting that the lifting of sub-lattice symmetry in the graphene shall induce an effective spin-orbit term of ≈40 meV. Overall, the results indicate that graphene-on-chromia heterostructures are a highly promising framework for the implementation of spintronic devices, capable of operation well beyond room temperature.
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Affiliation(s)
- Keke He
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Bilal Barut
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Shenchu Yin
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Michael D Randle
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Ripudaman Dixit
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Nargess Arabchigavkani
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Jubin Nathawat
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
| | - Ather Mahmood
- Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Will Echtenkamp
- Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Christian Binek
- Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Peter A Dowben
- Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Jonathan P Bird
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York, 14260, USA
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5
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Zhao S, Li X, Dong B, Wang H, Wang H, Zhang Y, Han Z, Zhang H. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:026401. [PMID: 33440363 DOI: 10.1088/1361-6633/abdb98] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, the emerging conceptual valley-related devices have attracted much attention due to the progress on generating, controlling, and detecting the valley degree of freedom in the transition metal dichalcogenide (TMD) monolayers. In general, it is known that achieving valley degree of freedom with long valley lifetime is crucial in the implementation of valleytronic devices. Here, we provide a brief introduction of the basic understandings of valley degree of freedom. We as well review the recent experimental advancement in the modulation of valley degree of freedom. The strategies include optical/magnetic/electric field tuning, moiré patterns, plasmonic metasurface, defects and strain engineering. In addition, we summarize the corresponding mechanisms, which can help to obtain large degree of polarization and long valley lifetimes in monolayer TMDs. Based on these methods, two-dimensional valley-optoelectronic systems based on TMD heterostructures can be constructed, providing opportunities for such as the new paradigm in data processing and transmission. Challenges and perspectives on the development of valleytronics are highlighted as well.
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Affiliation(s)
- Siwen Zhao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Baojuan Dong
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Huide Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Yupeng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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6
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Li R, Li X, Zhang M, Li Y, Yang Z, Huang C. A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics. J Phys Chem Lett 2021; 12:204-210. [PMID: 33325719 DOI: 10.1021/acs.jpclett.0c03309] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The vigorous development of two-dimensional materials puts forward higher requirements for more effective modulation of physical properties. Here, we utilize simple treatments for the emerging graphdiyne (GDY) materials to achieve dual control of magnetic and electrical properties through Fe/N codoping. The as-prepared Fe-N-GDY is confirmed as a highly conductive ferromagnetic semiconductor. The Curie temperature close to 205 K endows the materials promising application prospects in spin-related devices. Benefiting from uniform Fe/N comodification and performance optimization, such material could be used as carbon-based conductive ink for printed devices, such as a printed field-effect transistor (FET), which achieves a high mobility of 215 cm2 V-1 s-1. Even when printing Fe-N-GDY ink to assemble flexible FETs with an ionic liquid gate, the excellent transfer characteristics can be maintained and demonstrate stability with temperature. Those results provide a facile way to modulate GDY's properties and promote its application potential in large-area, multifunctional integrated electronic devices, including wearable devices.
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Affiliation(s)
- Ru Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Xiaodong Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Mingjia Zhang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Yuan Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Ze Yang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Changshui Huang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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7
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Zhang M, Wang X, Sun H, Wang N, He J, Wang N, Long Y, Huang C, Li Y. Induced Ferromagnetic Order of Graphdiyne Semiconductors by Introducing a Heteroatom. ACS CENTRAL SCIENCE 2020; 6:950-958. [PMID: 32607442 PMCID: PMC7318061 DOI: 10.1021/acscentsci.0c00348] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Indexed: 05/24/2023]
Abstract
To date, the realization of ferromagnetism in two-dimensional carbon semiconductors containing only sp electrons has remained a challenge for spintronics. Here, we utilize the atomic-level functionalization strategy to obtain three carbon matrix materials by accurately introducing different light elements (H, F, Cl) into graphdiyne's benzene ring. Their magnetic and conductive characteristics are thoroughly clarified via physical property measurements and DFT calculations. All of these carbon matrix materials retain their excellent intrinsic semiconductor properties. In particular, compared with the paramagnetism of HsGDY and ClsGDY, a robust ferromagnetic ordering as well as high mobility of up to 320 cm2 V-1 s-1 was observed in FsGDY, successfully realizing a ferromagnetic semiconductor. Through theory calculations, this unique ferromagnetic coupling can be attributed to the most striking charge transfer between carbon and fluorine atoms, demonstrating the advantages of controllable fabrication. These results not only reveal the important role of atomic-scale doping/substitution in optimizing graphdiyne material but also create new possibilities for manipulating spins and charges in 2D carbon materials.
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Affiliation(s)
- Mingjia Zhang
- Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy
of Sciences, Qingdao 266101, P. R. China
| | - Xiaoxiong Wang
- College
of Physics, Qingdao University, Qingdao 266071, P. R. China
| | - Huijuan Sun
- College
of Physics, Qingdao University, Qingdao 266071, P. R. China
| | - Naiyin Wang
- Department
of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital
Territory 2601, Australia
| | - Jianjiang He
- Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy
of Sciences, Qingdao 266101, P. R. China
| | - Ning Wang
- School of
Chemistry and Chemical Engineering, Shandong
University, Jinan 250100, P. R. China
| | - Yunze Long
- College
of Physics, Qingdao University, Qingdao 266071, P. R. China
| | - Changshui Huang
- Qingdao
Institute of Bioenergy and Bioprocess Technology, Chinese Academy
of Sciences, Qingdao 266101, P. R. China
- Center
of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yuliang Li
- Beijing
National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory
of Organic Solids, Institute of Chemistry,
Chinese Academy of Sciences, Beijing 100190, P. R. China
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8
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Liu Y, Zeng C, Zhong J, Ding J, Wang ZM, Liu Z. Spintronics in Two-Dimensional Materials. NANO-MICRO LETTERS 2020; 12:93. [PMID: 34138100 PMCID: PMC7770708 DOI: 10.1007/s40820-020-00424-2] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2020] [Accepted: 03/18/2020] [Indexed: 05/30/2023]
Abstract
Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.
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Affiliation(s)
- Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China.
- Shenzhen Research Institute of Central South University, A510a, Virtual University Building, Southern District, High-Tech Industrial Park, Yuehai Street, Nanshan District, Shenzhen, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China.
| | - Cheng Zeng
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Jiahong Zhong
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW, 2006, Australia.
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9
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Premasiri K, Gao XPA. Tuning spin-orbit coupling in 2D materials for spintronics: a topical review. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:193001. [PMID: 30726777 DOI: 10.1088/1361-648x/ab04c7] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Atomically-thin 2D materials have opened up new opportunities in the past decade in realizing novel electronic device concepts, owing to their unusual electronic properties. The recent progress made in the aspect of utilizing additional degrees of freedom of the electrons such as spin and valley suggests that 2D materials have a significant potential in replacing current electronic-charge-based semiconductor technology with spintronics and valleytronics. For spintronics, spin-orbit coupling plays a key role in manipulating the electrons' spin degree of freedom to encode and process information, and there are a host of recent studies exploring this facet of 2D materials. We review the recent advances in tuning spin-orbit coupling of 2D materials which are of notable importance to the progression of spintronics.
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Affiliation(s)
- Kasun Premasiri
- Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, OH 44106, United States of America
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10
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Safeer CK, Ingla-Aynés J, Herling F, Garcia JH, Vila M, Ontoso N, Calvo MR, Roche S, Hueso LE, Casanova F. Room-Temperature Spin Hall Effect in Graphene/MoS 2 van der Waals Heterostructures. NANO LETTERS 2019; 19:1074-1082. [PMID: 30608710 DOI: 10.1021/acs.nanolett.8b04368] [Citation(s) in RCA: 58] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Graphene is an excellent material for long-distance spin transport but allows little spin manipulation. Transition-metal dichalcogenides imprint their strong spin-orbit coupling into graphene via the proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally the spin Hall effect in graphene induced by MoS2 proximity and for varying temperatures up to room temperature. The fact that spin transport and the spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Additionally, for a single graphene/MoS2 heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS2. By a comparison of our results to theoretical calculations, the latter scenario is found to be the most plausible one. Our findings pave the way toward the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.
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Affiliation(s)
- C K Safeer
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
| | - Josep Ingla-Aynés
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
| | - Franz Herling
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
| | - José H Garcia
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and The Barcelona Institute of Science and Technology , Campus UAB , 08193 Bellaterra , Catalonia , Spain
| | - Marc Vila
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and The Barcelona Institute of Science and Technology , Campus UAB , 08193 Bellaterra , Catalonia , Spain
- Department of Physics , Universitat Autònoma de Barcelona , Campus UAB , 08193 Bellaterra , Catalonia , Spain
| | - Nerea Ontoso
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
| | - M Reyes Calvo
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
- IKERBASQUE , Basque Foundation for Science , 48013 Bilbao , Basque Country , Spain
| | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and The Barcelona Institute of Science and Technology , Campus UAB , 08193 Bellaterra , Catalonia , Spain
- ICREA - Institució Catalana de Recerca i Estudis Avançats , 08010 Barcelona , Catalonia , Spain
| | - Luis E Hueso
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
- IKERBASQUE , Basque Foundation for Science , 48013 Bilbao , Basque Country , Spain
| | - Fèlix Casanova
- CIC nanoGUNE , 20018 Donostia-San Sebastian , Basque Country , Spain
- IKERBASQUE , Basque Foundation for Science , 48013 Bilbao , Basque Country , Spain
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11
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Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure. Nat Commun 2017; 8:661. [PMID: 28939841 PMCID: PMC5610249 DOI: 10.1038/s41467-017-00563-y] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2017] [Accepted: 07/10/2017] [Indexed: 11/15/2022] Open
Abstract
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge conversion signal is crucial, as considerable outputs are needed for plausible applications. Unfortunately, the values obtained so far have been rather low. Here we exploit the spin Hall effect by using Pt, a non-magnetic metal with strong spin-orbit coupling, to generate and detect pure spin currents in a few-layer graphene channel. Furthermore, the outstanding properties of graphene, with long-distance spin transport and higher electrical resistivity than metals, allow us to achieve in our graphene/Pt lateral heterostructures the largest spin-to-charge output voltage at room temperature reported so far in the literature. Our approach opens up exciting opportunities towards the implementation of spin-orbit-based logic circuits and all electrical control of spin information without magnetic field. Spintronic devices with full electrical control rely on electrical generation and detection of spin currents in the absence of magnetic materials. Here, the authors use Pt, a non-magnetic metal, to generate and detect pure spin currents in a few-layer graphene channel, achieving a remarkable spin-to-charge voltage signal at room temperature.
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12
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Ashton M, Gluhovic D, Sinnott SB, Guo J, Stewart DA, Hennig RG. Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps. NANO LETTERS 2017; 17:5251-5257. [PMID: 28745061 DOI: 10.1021/acs.nanolett.7b01367] [Citation(s) in RCA: 61] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Through a systematic search of all layered bulk compounds combined with density functional calculations employing hybrid exchange-correlation functionals, we predict a family of three magnetic two-dimensional (2D) materials with half-metallic band structures. The 2D materials, FeCl2, FeBr2, and FeI2, are all sufficiently stable to be exfoliated from bulk layered compounds. The Fe2+ ions in these materials are in a high-spin octahedral d6 configuration leading to a large magnetic moment of 4 μB. Calculations of the magnetic anisotropy show an easy-plane for the magnetic moment. A classical XY model with nearest neighbor coupling estimates critical temperatures, Tc, for the Berezinskii-Kosterlitz-Thouless transition ranging from 122 K for FeI2 to 210 K for FeBr2. The quantum confinement of these 2D materials results in unusually large spin gaps, ranging from 4.0 eV for FeI2 to 6.4 eV for FeCl2, which should defend against spin current leakage even at small device length scales. Their purely spin-polarized currents and dispersive interlayer interactions should make these materials useful for 2D spin valves and other spintronic applications.
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Affiliation(s)
- Michael Ashton
- Department of Materials Science and Engineering, University of Florida , Gainesville, Florida 32611-6400, United States
| | - Dorde Gluhovic
- Department of Electrical and Computer Engineering, University of Florida , Gainesville, Florida 32611-6200, United States
| | - Susan B Sinnott
- Department of Materials Science and Engineering, The Pennsylvania State University , University Park, Pennsylvania 16801-7003, United States
| | - Jing Guo
- Department of Electrical and Computer Engineering, University of Florida , Gainesville, Florida 32611-6200, United States
| | - Derek A Stewart
- San Jose Research Center, HGST, a Western Digital Company, San Jose, California 95119, United States
| | - Richard G Hennig
- Department of Materials Science and Engineering, University of Florida , Gainesville, Florida 32611-6400, United States
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13
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Di Bernardo A, Millo O, Barbone M, Alpern H, Kalcheim Y, Sassi U, Ott AK, De Fazio D, Yoon D, Amado M, Ferrari AC, Linder J, Robinson JWA. p-wave triggered superconductivity in single-layer graphene on an electron-doped oxide superconductor. Nat Commun 2017; 8:14024. [PMID: 28102222 PMCID: PMC5253682 DOI: 10.1038/ncomms14024] [Citation(s) in RCA: 69] [Impact Index Per Article: 9.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2016] [Accepted: 11/21/2016] [Indexed: 11/21/2022] Open
Abstract
Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity was predicted in single-layer graphene (SLG), with the electrons pairing with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing SLG on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in SLG. The realization of unconventional superconductivity in SLG offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.
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Affiliation(s)
- A. Di Bernardo
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK
| | - O. Millo
- Racah Institute of Physics and the Hebrew University Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - M. Barbone
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - H. Alpern
- Racah Institute of Physics and the Hebrew University Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Y. Kalcheim
- Racah Institute of Physics and the Hebrew University Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - U. Sassi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - A. K. Ott
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - D. De Fazio
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - D. Yoon
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - M. Amado
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK
| | - A. C. Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
| | - J. Linder
- Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim, Norway
| | - J. W. A. Robinson
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK
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Yan W, Txoperena O, Llopis R, Dery H, Hueso LE, Casanova F. A two-dimensional spin field-effect switch. Nat Commun 2016; 7:13372. [PMID: 27834365 PMCID: PMC5114593 DOI: 10.1038/ncomms13372] [Citation(s) in RCA: 56] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2016] [Accepted: 09/27/2016] [Indexed: 12/23/2022] Open
Abstract
Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.
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Affiliation(s)
- Wenjing Yan
- CIC nanoGUNE, Tolosa Hiribidea 76, Donostia-San Sebastian, 20018 Basque Country, Spain
| | - Oihana Txoperena
- CIC nanoGUNE, Tolosa Hiribidea 76, Donostia-San Sebastian, 20018 Basque Country, Spain
| | - Roger Llopis
- CIC nanoGUNE, Tolosa Hiribidea 76, Donostia-San Sebastian, 20018 Basque Country, Spain
| | - Hanan Dery
- Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA
- Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
| | - Luis E. Hueso
- CIC nanoGUNE, Tolosa Hiribidea 76, Donostia-San Sebastian, 20018 Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48013 Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE, Tolosa Hiribidea 76, Donostia-San Sebastian, 20018 Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48013 Basque Country, Spain
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