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Li Z, Yang D, Wang F, Yang Y, Guo Y, Bao D, Yin T, Tang CS, Salim T, Xi L, Boothroyd C, Lam YM, Peng B, Battiato M, Yang H, Chia EEM. Electric-Field Tunable THz Emission via Quantum Geometry in Dirac Semimetal. NANO LETTERS 2025. [PMID: 40307016 DOI: 10.1021/acs.nanolett.5c01363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2025]
Abstract
Electric-field manipulation of spin degrees of freedom is pivotal for next-generation spintronics, yet nonvolatile control at terahertz (THz) frequencies remains elusive. Here, we harness the quantum geometry of a Dirac semimetal, PtTe2, to achieve all-electrical tunability of THz spintronic emission under a constant magnetic field without field cycling or remanent magnetization. By integrating a ferroelectric substrate with a PtTe2/ferromagnetic heterobilayer, we electrically modulate the Fermi level and Berry curvature of PtTe2, thereby controlling its spin Hall conductivity in real time, yielding a 21% modulation of the THz emission amplitude. Density functional theory corroborates doping-driven shifts in Berry curvature that directly alter spin Hall conductivity, underscoring the key role of geometric phases in ultrafast spin-charge conversion. Our approach offers a low-complexity, energy-efficient, and nonvolatile route to tunable spin Hall THz devices, and we anticipate that these findings will open new avenues for harnessing quantum geometry in spin-based logic and ultrafast electronics.
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Affiliation(s)
- Ziqi Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Dongsheng Yang
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
- Institute for Quantum Science and Technology, College of Science, National University of Defense Technology, Changsha 410073, China
| | - Fei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030006, China
| | - Yingshu Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Yuanyuan Guo
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Di Bao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Tingting Yin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Chi Sin Tang
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603 Singapore
| | - Teddy Salim
- School of Materials Science and Engineering and Facility for Analysis Characterisation Testing and Simulation, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Lifei Xi
- School of Materials Science and Engineering and Facility for Analysis Characterisation Testing and Simulation, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Chris Boothroyd
- School of Materials Science and Engineering and Facility for Analysis Characterisation Testing and Simulation, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Yeng Ming Lam
- School of Materials Science and Engineering and Facility for Analysis Characterisation Testing and Simulation, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Bo Peng
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Marco Battiato
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
| | - Elbert E M Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
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2
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Hsueh JW, Kuo LH, Chen PH, Chen WH, Chuang CY, Kuo CN, Lue CS, Shiu HW, Liu BH, Wang CH, Hsu YJ, Lin CL, Chou JP, Luo MF. Decomposition of methanol activated by surface under-coordinated Pd on layered PdTe 2. Phys Chem Chem Phys 2025. [PMID: 40266281 DOI: 10.1039/d5cp00130g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/24/2025]
Abstract
The reactivity of layered PdTe2 toward methanol (CH3OH) decomposition was promoted by surface under-coordinated Pd (denoted as Pduc) generated by removing surface Te with controlled Ar ion bombardment. Methanol on the Pduc sites at surface Te vacancies decomposed through competing dehydrogenation and C-O bond cleavage processes; approximately 26% of methanol was converted to CHx* and 17% to CHxO* (* denotes adspecies; x = 2 and 3) as major intermediates at 180 K, leading to a reaction probability of >40% and an ultimate gaseous production of molecular hydrogen, formaldehyde, methane and water. The characteristic reactivity arose from both geometric and electronic effects-the hexagonal-lattice positioning and partial oxidation of the Pduc; its comparison with that of PtTe2 surface emphasized the critical role of electronic structures in determining the reactivity and selectivity. Notably, these reaction processes produced scarce C* as the intermediate CHx* was preferentially hydrogenated. Our results suggest that a PdTe2 surface with Pduc at surface Te vacancies can serve as an efficient catalyst toward methanol decomposition and against carbon poisoning.
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Affiliation(s)
- Jing-Wen Hsueh
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
| | - Lai-Hsiang Kuo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
| | - Po-Han Chen
- Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2 Kuang Fu Road, Hsinchu 300044, Taiwan
| | - Wan-Hsin Chen
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan.
| | - Chi-Yao Chuang
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan.
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 10601, Taiwan
| | - Chin-Shan Lue
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 10601, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
| | - Hung-Wei Shiu
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Bo-Hong Liu
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Chia-Hsin Wang
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Yao-Jane Hsu
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan.
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan
| | - Jyh-Pin Chou
- Graduate School of Advanced Technology, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 106319, Taiwan.
| | - Meng-Fan Luo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
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3
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Zhao C, Cui S, Li T, Wu Y, Kong M, Bai W, Li K, Liu Y, Liu Z, Shang Z, Sun Z, Xiao C, Xie Y. Unexpected 18-Fold Overlapped Feathery Fermi Pockets in Typical Thermoelectric Bi_{0.5}Sb_{1.5}Te_{3}. PHYSICAL REVIEW LETTERS 2025; 134:086401. [PMID: 40085913 DOI: 10.1103/physrevlett.134.086401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 12/08/2024] [Accepted: 01/13/2025] [Indexed: 03/16/2025]
Abstract
Bi_{0.5}Sb_{1.5}Te_{3} is the most widely used p-type commercial thermoelectric materials over six decades, yet its complex electronic structure remains uncertain especially in band degeneracy and k_{z} dispersions. Here we show an unexpected band structure of 18-fold overlapped feathery Fermi pockets through substantial angle-resolved photoelectron spectroscopy data. Complemented with transport tests, we suggest that the high performance originates in the cooperation of four electronic features-momentum overlap of Fermi pockets, 18-fold band degeneracy, ultrasharp k_{y} dispersions, and heavy k_{z} bands. This cooperation of band features proposes a new paradigm for promising thermoelectrics.
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Affiliation(s)
- Chenxi Zhao
- University of Science and Technology of China, Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui, 230026, People's Republic of China
| | - Shengtao Cui
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Tongrui Li
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Yunbo Wu
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Mengruizhe Kong
- University of Science and Technology of China, Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui, 230026, People's Republic of China
| | - Wei Bai
- University of Science and Technology of China, Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui, 230026, People's Republic of China
| | - Kai Li
- University of Science and Technology of China, Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui, 230026, People's Republic of China
| | - Yi Liu
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Zhanfeng Liu
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Zhengming Shang
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Zhe Sun
- University of Science and Technology of China, National Synchrotron Radiation Laboratory, Hefei, Anhui 230029, People's Republic of China
| | - Chong Xiao
- University of Science and Technology of China, Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui, 230026, People's Republic of China
| | - Yi Xie
- University of Science and Technology of China, Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui, 230026, People's Republic of China
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4
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Wang J, Peng Y, Zhou T, Fu J, Quan W, Cheng Y, Ding H, Zhang Y. Direct Syntheses of 2D Noble Transition Metal Dichalcogenides Toward Electronics, Optoelectronics, and Electrocatalysis-Related Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2407233. [PMID: 39924733 DOI: 10.1002/smll.202407233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2024] [Revised: 01/26/2025] [Indexed: 02/11/2025]
Abstract
2D noble transition metal dichalcogenides (nTMDCs, PdX2 and PtX2, where X═S, Se, Te) have emerged as a new class of 2D materials, owing to their unique puckered pentagonal structure in 2D PdS2 and PdSe2, largely tunable band structures or band gaps with decreasing the layer thickness at the 2D limit, strong interlayer interactions, superior optoelectronic properties, high edge catalytic properties, etc. Directly synthesizing 2D nTMDCs domains or thin films with large-area uniformity, tunable thickness, and high crystalline quality is the premise for exploring these salient properties and developing a wide range of applications. Hereby, this review summarizes recent progress in the direct syntheses and characterizations of 2D nTMDCs, mainly focusing on the thermally assisted conversion (TAC) and chemical vapor deposition (CVD) methods, by using various metal and chalcogen-contained precursors. Meanwhile, the applications of directly synthesized 2D nTMDCs in various fields, such as high-performance field effect transistors (FETs), broadband photodetectors, superior catalysts in hydrogen evolution reactions, and ultra-sensitive piezo resistance sensors, are also discussed. Finally, challenges and prospects regarding the direct syntheses of high-quality 2D nTMDCs and their applications in next-generation electronic and optoelectronic devices, as well as novel catalysts beyond noble metals are overviewed.
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Affiliation(s)
- Jialong Wang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - You Peng
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Tong Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Jiatian Fu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Wenzhi Quan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yujin Cheng
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Haoxuan Ding
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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5
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Tang Q, Belić MR, Zhong H, Cao M, Li Y, Zhang Y. P T-symmetric photonic lattices with type-II Dirac cones. OPTICS LETTERS 2024; 49:4110-4113. [PMID: 39090871 DOI: 10.1364/ol.530600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2024] [Accepted: 07/01/2024] [Indexed: 08/04/2024]
Abstract
The type-II Dirac cone is a special feature of the band structure, whose Fermi level is represented by a pair of crossing lines. It has been demonstrated that such a structure is useful for investigating topological edge solitons and, more specifically, for mimicking the Klein tunneling. However, it is still not clear what the interplay between type-II Dirac cones and the non-Hermiticity mechanism will result in. Here, this question is addressed; in particular, we report the P T-symmetric photonic lattices with type-II Dirac cones for the first time to our knowledge. We identify a slope-exceptional ring and name it the type-II exceptional ring. We display the restoration of the P T symmetry of the lattice by reducing the separation between the sites in the unit cell. Curiously, the amplitude of the beam during propagation in the non-Hermitian lattice with P T symmetry only decays because of diffraction, whereas in the P T symmetry-broken lattice it will be amplified, even though the beam still diffracts. This work establishes the link between the non-Hermiticity mechanism and the violation of Lorentz invariance in these physical systems.
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6
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Tyner AC. BerryEasy: a GPU enabled python package for diagnosis of nth-order and spin-resolved topology in the presence of fields and effects. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:325902. [PMID: 38701825 DOI: 10.1088/1361-648x/ad475f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
Multiple software packages currently exist for the computation of bulk topological invariants in both idealized tight-binding models and realistic Wannier tight-binding models derived from density functional theory. Currently, only one package is capable of computing nested Wilson loops and spin-resolved Wilson loops. These state-of-the-art techniques are vital for accurate analysis of band topology. In this paper we introduce BerryEasy, a python package harnessing the speed of graphical processing units to allow for efficient topological analysis of supercells in the presence of disorder and impurities. Moreover, the BerryEasy package has built-in functionality to accommodate use of realistic many-band tight-binding models derived from first-principles.
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Affiliation(s)
- Alexander C Tyner
- Nordita, KTH Royal Institute of Technology and Stockholm University, 106 91 Stockholm, Sweden
- Department of Physics, University of Connecticut, Storrs, CT 06269, United States of America
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7
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Hirayama M, Nomoto T, Arita R. Topological band inversion and chiral Majorana mode in hcp thallium. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:275502. [PMID: 38447148 DOI: 10.1088/1361-648x/ad3093] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 03/06/2024] [Indexed: 03/08/2024]
Abstract
The chiral Majorana fermion is an exotic particle that is its own antiparticle. It can arise in a one-dimensional edge of topological materials, and especially that in a topological superconductor can be exploited in non-Abelian quantum computation. While the chiral Majorana mode (CMM) remains elusive, a promising situation is realized when superconductivity coexists with a topologically non-trivial surface state. Here, we perform fully non-empirical calculation for the CMM considering superconductivity and surface relaxation, and show that hexagonal close-packed thallium (Tl) has an ideal electronic state that harbors the CMM. Thekz=0plane of Tl is a mirror plane, realizing a full-gap band inversion corresponding to a topological crystalline insulating phase. Its surface and hinge are stable and easy to make various structures. Another notable feature is that the surface Dirac point is very close to the Fermi level, so that a small Zeeman field can induce a topological transition. Our calculation indicates that Tl will provide a new platform of the Majorana fermion.
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Affiliation(s)
- Motoaki Hirayama
- Quantum-Phase Electronics Center, University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako 351-0198, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo 153-8904, Japan
| | - Ryotaro Arita
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako 351-0198, Japan
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo 153-8904, Japan
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8
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Li G, Li M, Zhou X, Gao HJ. Toward large-scale, ordered and tunable Majorana-zero-modes lattice on iron-based superconductors. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016501. [PMID: 37963402 DOI: 10.1088/1361-6633/ad0c5c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 11/14/2023] [Indexed: 11/16/2023]
Abstract
Majorana excitations are the quasiparticle analog of Majorana fermions in solid materials. Typical examples are the Majorana zero modes (MZMs) and the dispersing Majorana modes. When probed by scanning tunneling spectroscopy, the former manifest as a pronounced conductance peak locating precisely at zero-energy, while the latter behaves as constant or slowly varying density of states. The MZMs obey non-abelian statistics and are believed to be building blocks for topological quantum computing, which is highly immune to the environmental noise. Existing MZM platforms include hybrid structures such as topological insulator, semiconducting nanowire or 1D atomic chains on top of a conventional superconductor, and single materials such as the iron-based superconductors (IBSs) and 4Hb-TaS2. Very recently, ordered and tunable MZM lattice has also been realized in IBS LiFeAs, providing a scalable and applicable platform for future topological quantum computation. In this review, we present an overview of the recent local probe studies on MZMs. Classified by the material platforms, we start with the MZMs in the iron-chalcogenide superconductors where FeTe0.55Se0.45and (Li0.84Fe0.16)OHFeSe will be discussed. We then review the Majorana research in the iron-pnictide superconductors as well as other platforms beyond the IBSs. We further review recent works on ordered and tunable MZM lattice, showing that strain is a feasible tool to tune the topological superconductivity. Finally, we give our summary and perspective on future Majorana research.
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Affiliation(s)
- Geng Li
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
| | - Meng Li
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xingtai Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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9
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Wang F, Zhang Y, Wang Z, Zhang H, Wu X, Bao C, Li J, Yu P, Zhou S. Ionic liquid gating induced self-intercalation of transition metal chalcogenides. Nat Commun 2023; 14:4945. [PMID: 37587106 PMCID: PMC10432556 DOI: 10.1038/s41467-023-40591-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Accepted: 07/31/2023] [Indexed: 08/18/2023] Open
Abstract
Ionic liquids provide versatile pathways for controlling the structures and properties of quantum materials. Previous studies have reported electrostatic gating of nanometer-thick flakes leading to emergent superconductivity, insertion or extraction of protons and oxygen ions in perovskite oxide films enabling the control of different phases and material properties, and intercalation of large-sized organic cations into layered crystals giving access to tailored superconductivity. Here, we report an ionic-liquid gating method to form three-dimensional transition metal monochalcogenides (TMMCs) by driving the metals dissolved from layered transition metal dichalcogenides (TMDCs) into the van der Waals gap. We demonstrate the successful self-intercalation of PdTe2 and NiTe2, turning them into high-quality PdTe and NiTe single crystals, respectively. Moreover, the monochalcogenides exhibit distinctive properties from dichalcogenides. For instance, the self-intercalation of PdTe2 leads to the emergence of superconductivity in PdTe. Our work provides a synthesis pathway for TMMCs by means of ionic liquid gating driven self-intercalation.
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Affiliation(s)
- Fei Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yang Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Zhijie Wang
- Shenzhen Geim Graphene Center and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, People's Republic of China
| | - Haoxiong Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Xi Wu
- Shenzhen Geim Graphene Center and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, People's Republic of China
| | - Changhua Bao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jia Li
- Shenzhen Geim Graphene Center and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, People's Republic of China.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China.
- Frontier Science Center for Quantum Information, Beijing, 100084, People's Republic of China.
| | - Shuyun Zhou
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, People's Republic of China.
- Frontier Science Center for Quantum Information, Beijing, 100084, People's Republic of China.
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10
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Chapai R, Reddy PVS, Xing L, Graf DE, Karki AB, Chang TR, Jin R. Evidence for unconventional superconductivity and nontrivial topology in PdTe. Sci Rep 2023; 13:6824. [PMID: 37100848 PMCID: PMC10133450 DOI: 10.1038/s41598-023-33237-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Accepted: 04/10/2023] [Indexed: 04/28/2023] Open
Abstract
PdTe is a superconductor with Tc ~ 4.25 K. Recently, evidence for bulk-nodal and surface-nodeless gap features has been reported in PdTe. Here, we investigate the physical properties of PdTe in both the normal and superconducting states via specific heat and magnetic torque measurements and first-principles calculations. Below Tc, the electronic specific heat initially decreases in T3 behavior (1.5 K < T < Tc) then exponentially decays. Using the two-band model, the superconducting specific heat can be well described with two energy gaps: one is 0.372 meV and another 1.93 meV. The calculated bulk band structure consists of two electron bands (α and β) and two hole bands (γ and η) at the Fermi level. Experimental detection of the de Haas-van Alphen (dHvA) oscillations allows us to identify four frequencies (Fα = 65 T, Fβ = 658 T, Fγ = 1154 T, and Fη = 1867 T for H // a), consistent with theoretical predictions. Nontrivial α and β bands are further identified via both calculations and the angle dependence of the dHvA oscillations. Our results suggest that PdTe is a candidate for unconventional superconductivity.
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Affiliation(s)
- Ramakanta Chapai
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA, 70803, USA
| | | | - Lingyi Xing
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA, 70803, USA
| | - David E Graf
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Amar B Karki
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA, 70803, USA
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan
- Center for Quantum Frontiers of Research and Technology (QFort), Tainan, 70101, Taiwan
- Physics Division, National Center for Theoretical Sceinces, Taipei, 10617, Taiwan
| | - Rongying Jin
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA, 70803, USA.
- Center for Experimental Nanoscale Physics, Department of Physics and Astronomy, University of South Carolina, Columbia, SC, 29208, USA.
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11
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Chen WH, Kawakami N, Hsueh JW, Kuo LH, Chen JY, Liao TW, Kuo CN, Lue CS, Lai YL, Hsu YJ, Lien DH, Hu C, Chou JP, Luo MF, Lin CL. Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16153-16161. [PMID: 36802501 DOI: 10.1021/acsami.2c21150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.
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Affiliation(s)
- Wan-Hsin Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Naoya Kawakami
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Jing-Wen Hsueh
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Lai-Hsiang Kuo
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Jiun-Yu Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Ting-Wei Liao
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 106, Taiwan
| | - Chin-Shan Lue
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 106, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 701, Taiwan
| | - Yu-Ling Lai
- Nanoscience Group, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Yao-Jane Hsu
- Nanoscience Group, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Der-Hsien Lien
- Institute of Electronic Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Chenming Hu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Jyh-Pin Chou
- Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
| | - Meng-Fan Luo
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
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12
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Cook J, Mardanya S, Lu Q, Conner C, Snyder M, Zhang X, McMillen J, Watson G, Chang TR, Bian G. Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe 2 Ultrathin Films. NANO LETTERS 2023; 23:1752-1757. [PMID: 36825889 DOI: 10.1021/acs.nanolett.2c04511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The superconductor PdTe2 is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe2 a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the spectroscopic characterization of ultrathin PdTe2 films with thickness down to three monolayers (ML). In the 3 ML PdTe2 film, we observed spin-polarized surface resonance states, which are isolated from the bulk bands due to the quantum size effects. In addition, the hybridization of surface states on opposite faces leads to a thickness-dependent gap in the topological surface Dirac bands. Our photoemission results show clearly that the size of the hybridization gap increases as the film thickness is reduced. The observation of isolated surface resonances and gapped topological surface states sheds light on the applications of PdTe2 quantum films in spintronics and topological quantum computation.
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Affiliation(s)
- Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Sougata Mardanya
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Clayton Conner
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Matthew Snyder
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Xiaoqian Zhang
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - James McMillen
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Geoff Watson
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Center for Quantum Frontiers of Research and Technology (QFort), Tainan 70101, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
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13
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First Principles Computation of New Topological B2X2Zn (X = Ir, Rh, Co) Compounds. J 2023. [DOI: 10.3390/j6010011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023] Open
Abstract
Recent attempts at searching for new materials have revealed a large class of materials that show topological behaviors with unusual physical properties and potential applications leading to enthralling discoveries both theoretically and experimentally. We computationally predict new three-dimensional topological compounds of space group 139(I/4mmm). After conducting a full volume optimization process by allowing the rearrangement of atomic positions and lattice parameters, the first-principles calculation with a generalized gradient approximation is utilized to identify multiple Dirac-type crossings around X and P symmetric points near Fermi energy. Importantly, the band inversion at point P is recognized. Further, we investigate the compound for topological crystalline insulating behavior by conducting surface state calculation and by investigating gapping behavior by increasing lattice parameters. Additionally, we perform formation energy, elastic properties, and phonon modes calculations to verify the structural, mechanical, and dynamical stability of the compounds. Therefore, we suggest compounds for further investigation and experimental realization.
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14
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Huang X, Wang J, Zhao C, Gan LY, Xu H. The surface charge induced high activity of oxygen reduction reaction on the PdTe 2 bilayer. Phys Chem Chem Phys 2023; 25:4105-4112. [PMID: 36651805 DOI: 10.1039/d2cp05772g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Developing transition metal dichalcogenides as electrocatalysts has attracted great interest due to their tunable electronic properties and good thermal stabilities. Herein, we propose a PdTe2 bilayer as a promising electrocatalyst candidate towards the oxygen reduction reaction (ORR), based on extensive investigation of the electronic properties of PdTe2 thin films as well as atomic-level reaction kinetics at explicit electrode potentials. We verify that under electrochemical reducing conditions, the electron emerging on the electrode surface is directly transferred to O2 adsorbed on the PdTe2 bilayer, which greatly reduces the dissociation barrier of O2, and thereby facilitates the ORR to proceed via a dissociative pathway. Moreover, the barriers of the electrochemical steps in this pathway are all found to be less than 0.1 eV at the ORR limiting potential, demonstrating fast ORR kinetics at ambient conditions. This unique mechanism offers excellent energy efficiency and four-electron selectivity for the PdTe2 bilayer, and it is identified as a promising candidate for fuel cell applications.
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Affiliation(s)
- Xiang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Jiong Wang
- Innovation Center for Chemical Sciences, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Changming Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Li-Yong Gan
- Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400030, China
| | - Hu Xu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China. .,Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China.,Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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15
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Lu H, Liu W, Wang H, Liu X, Zhang Y, Yang D, Pi X. Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide. NANOTECHNOLOGY 2023; 34:132001. [PMID: 36563353 DOI: 10.1088/1361-6528/acae28] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.
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Affiliation(s)
- Hui Lu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Wenji Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Xiao Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
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16
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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17
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Pan S, Hong M, Zhu L, Quan W, Zhang Z, Huan Y, Yang P, Cui F, Zhou F, Hu J, Zheng F, Zhang Y. On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation. ACS NANO 2022; 16:11444-11454. [PMID: 35786839 DOI: 10.1021/acsnano.2c05570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe2, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe2 and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe2 to self-intercalated Ni3Te4 and Ni5Te6. The synthesis of Ni self-intercalated NixTey compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe2 intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.
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Affiliation(s)
- Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Min Hong
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenzhi Quan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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18
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Lam NH, Nguyen PL, Choi BK, Ly TT, Duvjir G, Rhee TG, Jo YJ, Kim TH, Jozwiak C, Bostwick A, Rotenberg E, Hwang Y, Chang YJ, Lee J, Kim J. Controlling Spin-Orbit Coupling to Tailor Type-II Dirac Bands. ACS NANO 2022; 16:11227-11233. [PMID: 35838605 DOI: 10.1021/acsnano.2c04301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
NiTe2, a type-II Dirac semimetal with a strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density functional theory calculations, we report that the strength of the spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac Fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.
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Affiliation(s)
- Nguyen Huu Lam
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Phuong Lien Nguyen
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Byoung Ki Choi
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| | - Trinh Thi Ly
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Ganbat Duvjir
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Tae Gyu Rhee
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Republic of Korea
| | - Yong Jin Jo
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Tae Heon Kim
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Chris Jozwiak
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Younghun Hwang
- Electricity and Electronics and Semiconductor Applications, Ulsan College, Ulsan 44610, Republic of Korea
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Republic of Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Jungdae Kim
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
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19
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Miao T, Xiang M, Li D, Wang X. Electrical and thermal transport properties of high crystalline PdTe 2 nanoribbons under a strong magnetic field. NANOSCALE 2022; 14:10101-10107. [PMID: 35792681 DOI: 10.1039/d2nr02049a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The low-temperature superconductivity and topological properties of two-dimensional PdTe2 have shown great potential in the fields of optics and electronics, and its electrical and thermal transport properties under a strong magnetic field are very important for basic research and practical applications. In this study, the electrical resistivity and thermal conductivity of high crystalline PdTe2 nanoribbons were comprehensively measured by applying the direct current heating method, eliminating the thermal and electrical contact resistances at different magnetic field intensities and temperatures. It is found that the PdTe2 nanoribbons exhibited a low electrical resistivity of ∼27 μΩ cm and a high thermal conductivity of ∼130 W m-1 K-1 at room temperature. Moreover, the magnetoresistance of PdTe2 nanoribbons increased with the decrease in temperature and reached 114% at 20 K and 14 T. The thermal conductivity change rate caused by the 14 T magnetic field increased at low temperatures, reaching -11.3% at 20 K.
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Affiliation(s)
- Tingting Miao
- Beijing Key Laboratory of Process Fluid Filtration and Separation, College of Mechanical and Transportation Engineering, China University of Petroleum-Beijing, Beijing, 102249, China.
| | - Mengxian Xiang
- Beijing Key Laboratory of Process Fluid Filtration and Separation, College of Mechanical and Transportation Engineering, China University of Petroleum-Beijing, Beijing, 102249, China.
| | - Dawei Li
- Beijing Key Laboratory of Process Fluid Filtration and Separation, College of Mechanical and Transportation Engineering, China University of Petroleum-Beijing, Beijing, 102249, China.
| | - Xueshen Wang
- National Institute of Metrology, Beijing 100029, China
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20
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Liu Z, Han T, Liu M, Huang S, Zhang Z, Long M, Hou X, Shan L. Protonation enhanced superconductivity in PdTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:335603. [PMID: 35679850 DOI: 10.1088/1361-648x/ac7767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Electrochemical ionic liquid gating is an effective way to intercalate ions into layered materials and modulate the properties. Here we report an enhanced superconductivity in a topological superconductor candidate PdTe2through electrochemical gating procedure. The superconducting transition temperature was increased to approximately 3.2 K by ionic gating induced protonation at room temperature. Moreover, a further enhanced superconductivity of both superconducting transition temperature and superconducting volume fraction was observed after the gated samples were placed in a glove box for 2 months. This may be caused by the diffusion of protons in the gated single crystals, which is rarely reported in electrochemical ionic liquid gating experiments. Our results further the superconducting study of PdTe2and may reveal a common phenomenon in the electrochemical gating procedure.
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Affiliation(s)
- Zhen Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Mengqin Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Shuting Huang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Zongyuan Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Xingyuan Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
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21
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Luo J, Jiang P, Wang D, Yuan X, Sun H, Gan L, Su C, Zhang Q. Electro-exfoliated PdTe 2 nanosheets for enhanced methanol electrooxidation performance in alkaline media. Chem Commun (Camb) 2022; 58:4755-4758. [PMID: 35333272 DOI: 10.1039/d2cc00398h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
Hydrogen-free cathodic exfoliation was utilized to obtain PdTe2 nanosheets (PTNS) with size 300 nm × 100 nm. Abundant highly exposed active sites and a strong electronic effect between Pd and Te endow PTNS with simultaneous superior methanol oxidation performance in alkaline media, which delivers a low onset potential, high mass and specific activity, and efficient CO elimination ability.
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Affiliation(s)
- Jingjing Luo
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoeletronics, Shenzhen University, Shenzhen 518060, China.
| | - Peng Jiang
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoeletronics, Shenzhen University, Shenzhen 518060, China. .,School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230027, China
| | - Dongdong Wang
- School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230027, China
| | - Xueyou Yuan
- Department of Energy Engineering and Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan
| | - Hongli Sun
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoeletronics, Shenzhen University, Shenzhen 518060, China.
| | - Lang Gan
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoeletronics, Shenzhen University, Shenzhen 518060, China.
| | - Chenliang Su
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoeletronics, Shenzhen University, Shenzhen 518060, China.
| | - Qitao Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoeletronics, Shenzhen University, Shenzhen 518060, China.
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22
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Feng LY, Villaos RAB, Maghirang AB, Huang ZQ, Hsu CH, Lin H, Chuang FC. Prediction of topological Dirac semimetal in Ca-based Zintl layered compounds CaM 2X 2 (M = Zn or Cd; X = N, P, As, Sb, or Bi). Sci Rep 2022; 12:4582. [PMID: 35301355 PMCID: PMC8930984 DOI: 10.1038/s41598-022-08370-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 03/08/2022] [Indexed: 11/10/2022] Open
Abstract
Topological Dirac materials are attracting a lot of attention because they offer exotic physical phenomena. An exhaustive search coupled with first-principles calculations was implemented to investigate 10 Zintl compounds with a chemical formula of CaM2X2 (M = Zn or Cd, X = N, P, As, Sb, or Bi) under three crystal structures: CaAl2Si2-, ThCr2Si2-, and BaCu2S2-type crystal phases. All of the materials were found to energetically prefer the CaAl2Si2-type structure based on total ground state energy calculations. Symmetry-based indicators are used to evaluate their topological properties. Interestingly, we found that CaM2Bi2 (M = Zn or Cd) are topological crystalline insulators. Further calculations under the hybrid functional approach and analysis using k · p model reveal that they exhibit topological Dirac semimetal (TDSM) states, where the four-fold degenerate Dirac points are located along the high symmetry line in-between Г to A points. These findings are verified through Green's function surface state calculations under HSE06. Finally, phonon spectra calculations revealed that CaCd2Bi2 is thermodynamically stable. The Zintl phase of AM2X2 compounds have not been identified in any topological material databases, thus can be a new playground in the search for new topological materials.
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Affiliation(s)
- Liang-Ying Feng
- Department of Physics, National Sun Yat-Sen University, 70 Lienhai Rd., Kaohsiung, 80424, Taiwan
| | - Rovi Angelo B Villaos
- Department of Physics, National Sun Yat-Sen University, 70 Lienhai Rd., Kaohsiung, 80424, Taiwan
| | - Aniceto B Maghirang
- Department of Physics, National Sun Yat-Sen University, 70 Lienhai Rd., Kaohsiung, 80424, Taiwan
| | - Zhi-Quan Huang
- Department of Physics, National Sun Yat-Sen University, 70 Lienhai Rd., Kaohsiung, 80424, Taiwan
| | - Chia-Hsiu Hsu
- Department of Physics, National Sun Yat-Sen University, 70 Lienhai Rd., Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei, 115201, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-Sen University, 70 Lienhai Rd., Kaohsiung, 80424, Taiwan.
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan.
- Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan.
- Center for Theoretical and Computational Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.
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23
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Wang L, Han L, Guo W, Zhang L, Yao C, Chen Z, Chen Y, Guo C, Zhang K, Kuo CN, Lue CS, Politano A, Xing H, Jiang M, Yu X, Chen X, Lu W. Hybrid Dirac semimetal-based photodetector with efficient low-energy photon harvesting. LIGHT, SCIENCE & APPLICATIONS 2022; 11:53. [PMID: 35273145 PMCID: PMC8913679 DOI: 10.1038/s41377-022-00741-8] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Revised: 01/26/2022] [Accepted: 02/14/2022] [Indexed: 05/06/2023]
Abstract
Despite the considerable effort, fast and highly sensitive photodetection is not widely available at the low-photon-energy range (~meV) of the electromagnetic spectrum, owing to the challenging light funneling into small active areas with efficient conversion into an electrical signal. Here, we provide an alternative strategy by efficiently integrating and manipulating at the nanoscale the optoelectronic properties of topological Dirac semimetal PtSe2 and its van der Waals heterostructures. Explicitly, we realize strong plasmonic antenna coupling to semimetal states near the skin-depth regime (λ/104), featuring colossal photoresponse by in-plane symmetry breaking. The observed spontaneous and polarization-sensitive photocurrent are correlated to strong coupling with the nonequilibrium states in PtSe2 Dirac semimetal, yielding efficient light absorption in the photon range below 1.24 meV with responsivity exceeding ∼0.2 A/W and noise-equivalent power (NEP) less than ~38 pW/Hz0.5, as well as superb ambient stability. Present results pave the way to efficient engineering of a topological semimetal for high-speed and low-energy photon harvesting in areas such as biomedical imaging, remote sensing or security applications.
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Affiliation(s)
- Lin Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China.
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China.
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
| | - Li Han
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Wanlong Guo
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Libo Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Chenyu Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Zhiqingzi Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Yulu Chen
- The 50th Research Institute of China Electronics Technology Group, Shanghai, 200331, China
| | - Cheng Guo
- Research Center for Intelligent Network, Zhejiang Lab, Hangzhou, 311121, China
| | - Kaixuan Zhang
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Antonio Politano
- INSTM and Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, 67100, L'Aquila (AQ), Italy.
- CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121, Catania, Italy.
| | - Huaizhong Xing
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Mengjie Jiang
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Xianbin Yu
- Research Center for Intelligent Network, Zhejiang Lab, Hangzhou, 311121, China
| | - Xiaoshuang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
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24
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Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
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Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
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25
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Song J, Qin Y, Wang Y, Cao C. Superconductivity and topologically nontrivial states in noncentrosymmetric XVSe 2 (X = Pb, Sn): a first-principles study. Phys Chem Chem Phys 2022; 24:1770-1778. [PMID: 34985071 DOI: 10.1039/d1cp04111h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Noncentrosymmetric superconductors are strong candidates for exploring intrinsic topological superconductivity. Here, we predict two new noncentrosymmetric superconductors SnVSe2 and PbVSe2 by a systematic first-principles study. These two compounds show good thermal and dynamic stabilities. Moreover, the band topology of both compounds is predicted to be nontrivial via Z2 calculation and slab models. We also investigate the electron-phonon interactions in SnVSe2 and PbVSe2, indicating the Tc of SnVSe2 and PbVSe2 without external pressure are predicted to be ∼1.18 K and ∼0.22 K, respectively. Furthermore, the results on pressure engineering in PbVSe2 imply that the Tc of PbVSe2 can be tuned to 2.39 K for enhanced contributions from Pb layers under pressure up to 6.4 GPa. This work may provide new platforms for probing spin-triplet paring and may help with designing and developing new metal-intercalated transition metal dichalcogenides.
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Affiliation(s)
- Jiexi Song
- Research and Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen 518057, China. .,MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xian 710072, China
| | - Yanqing Qin
- Research and Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen 518057, China. .,MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xian 710072, China
| | - Yaocen Wang
- Research and Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen 518057, China. .,MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xian 710072, China
| | - Chongde Cao
- Research and Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen 518057, China. .,MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xian 710072, China
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26
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Das D, Gupta R, Baines C, Luetkens H, Kaczorowski D, Guguchia Z, Khasanov R. Unconventional Pressure Dependence of the Superfluid Density in the Nodeless Topological Superconductor α-PdBi_{2}. PHYSICAL REVIEW LETTERS 2021; 127:217002. [PMID: 34860073 DOI: 10.1103/physrevlett.127.217002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Revised: 10/18/2021] [Accepted: 10/20/2021] [Indexed: 06/13/2023]
Abstract
We investigated the superconducting properties of the topological superconductor α-PdBi_{2} at ambient and external pressures up to 1.77 GPa using muon spin rotation experiments. The ambient pressure measurements evince a fully gapped s-wave superconducting state in the bulk of the specimen. Alternating current magnetic susceptibility and muon spin rotation measurements manifest a continuous suppression of T_{c} with increasing pressure. In parallel, we observed a significant decrease of superfluid density by ∼20% upon application of external pressure. Remarkably, the superfluid density follows a linear relation with T_{c}, which was found before in some unconventional topological superconductors and hole-doped cuprates. This finding signals a possible crossover from Bose-Einstein to Bardeen-Cooper-Schrieffer like condensation in α-PdBi_{2}.
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Affiliation(s)
- Debarchan Das
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Ritu Gupta
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Christopher Baines
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Hubertus Luetkens
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Dariusz Kaczorowski
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wrocław, ul. Okólna 2, 50-422, Poland
| | - Zurab Guguchia
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Rustem Khasanov
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
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27
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Hao X, Guo Z, Li H, Gong Y, Chen D. Anomalous enhancement of atomic vibration induced by electronic transition in 2H-MoTe 2under compression. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:025402. [PMID: 34584018 DOI: 10.1088/1361-648x/ac2ad1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
In this work, we explore the atomic vibration and local structure in 2H-MoTe2by using high-pressure x-ray absorption fine structure spectroscopy up to ∼20 GPa. The discrepancy between the Mo-Te and Mo-Mo bond length in 2H-MoTe2obtained from extended-XAFS and other techniques shows abnormal increase at 7.3 and 14.8 GPa, which is mainly due to the abrupt enhancement of vibration perpendicular to the bond direction.Ab initiocalculations are performed to study the electronic structure of 2H-MoTe2up to 20 GPa and confirm a semiconductor to semimetal transition around 8 GPa and a Lifshitz transition around 14 GPa. We attribute the anomalous enhancement of vibration perpendicular to the bond direction to electronic transitions. We find the electronic transition induced enhancement of local vibration for the first time. Our finding offers a novel insight into the local atomic vibration and provides a new platform for understanding the relationship between the electronic transition and atomic vibration.
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Affiliation(s)
- Xingyu Hao
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhiying Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haijing Li
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yu Gong
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dongliang Chen
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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28
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Luo J, Fan M, Xiong L, Hao Q, Jiang M, He Q, Su C. 1T-Phase Dirac Semimetal PdTe 2 Nanoparticles for Efficient Photothermal Therapy in the NIR-II Biowindow. ACS APPLIED MATERIALS & INTERFACES 2021; 13:27963-27971. [PMID: 34110773 DOI: 10.1021/acsami.1c06740] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
1T-phase transition-metal dichalcogenides (TMDs) nanomaterials are one type of emerging and promising near-infrared II (NIR-II) photothermal agents (PTAs) derived from their distinct metallic electronic structure, but it is still challenging to synthesize these nanomaterials. Herein, PdTe2 nanoparticles (PTNs) with a 1T crystal symmetry and around 50 nm in size are prepared by an electrochemical exfoliation method, and the corresponding photothermal performances irradiated under a NIR-II laser have been explored. The encapsulation of 1,2-distearoyl-sn-glycero-3-phosphoethanolamine-poly(ethylene glycol) (DSPE-PEG) endows PTNs with water solubility, enhanced photothermal stability, and high biocompatibility. Notably, PTN/DSPE-PEG displays a potent absorbance through the NIR-II zone and considerable photothermal conversion efficiency, which is up to 68% when irradiated with a 1060 nm laser. With these unique photothermal properties, excellent in vitro and in vivo tumor inhibition effects of PTN/DSPE-PEG have been achieved under the irradiation of a NIR-II (1060 nm) laser without visible toxicity to normal tissues, suggesting that it is an efficient NIR-II photothermal nanoagent.
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Affiliation(s)
- Jingjing Luo
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, No. 3688 Nanhai Avenue, Shenzhen 518060, China
| | - Mingjian Fan
- School of Biomedical Engineering, Health Science Center, Shenzhen University, No. 1066 Xueyuan Road, Shenzhen 518060, China
| | - Liwei Xiong
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan 430205, China
| | - Qiaoyan Hao
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, No. 3688 Nanhai Avenue, Shenzhen 518060, China
| | - Mengna Jiang
- School of Biomedical Engineering, Health Science Center, Shenzhen University, No. 1066 Xueyuan Road, Shenzhen 518060, China
| | - Qianjun He
- School of Biomedical Engineering, Health Science Center, Shenzhen University, No. 1066 Xueyuan Road, Shenzhen 518060, China
| | - Chenliang Su
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, No. 3688 Nanhai Avenue, Shenzhen 518060, China
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29
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Suo P, Zhang H, Yan S, Zhang W, Fu J, Lin X, Hao S, Jin Z, Zhang Y, Zhang C, Miao F, Liang SJ, Ma G. Observation of Negative Terahertz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe_{2}. PHYSICAL REVIEW LETTERS 2021; 126:227402. [PMID: 34152189 DOI: 10.1103/physrevlett.126.227402] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Revised: 02/04/2021] [Accepted: 04/21/2021] [Indexed: 06/13/2023]
Abstract
As a newly emergent type-II Dirac semimetal, platinum telluride (PtTe_{2}) stands out from other two dimensional noble-transition-metal dichalcogenides for the unique band structure and novel physical properties, and has been studied extensively. However, the ultrafast response of low energy quasiparticle excitation in terahertz frequency remains nearly unexplored yet. Herein, we employ optical pump-terahertz probe (OPTP) spectroscopy to systematically study the photocarrier dynamics of PtTe_{2} thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the terahertz photoconductivity (PC) of PtTe_{2} films shows abrupt increase initially, while the terahertz PC changes into negative value in a subpicosecond timescale, followed by a prolonged recovery process that lasted a few nanoseconds. The magnitude of both positive and negative terahertz PC response shows strongly pump fluence dependence. We assign the unusual negative terahertz PC to the formation of small polaron due to the strong electron-phonon (e-ph) coupling, which is further substantiated by temperature and film thickness dependent measurements. Moreover, our investigations give a subpicosecond timescale of simultaneous carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is of crucial importance for designing PtTe_{2}-based optoelectronic devices.
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Affiliation(s)
- Peng Suo
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Huiyun Zhang
- College of Electronics and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Shengnan Yan
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wenjie Zhang
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Jibo Fu
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Xian Lin
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Song Hao
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, 516 JunGong Road, Shanghai 200093, China
- STU & SIOM Joint Laboratory for Superintense Lasers and the Applications, Shanghai 201210, China
| | - Yuping Zhang
- College of Electronics and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Chao Zhang
- School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia
| | - Feng Miao
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shi-Jun Liang
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Guohong Ma
- Department of Physics, Shanghai University, Shanghai 200444, China
- STU & SIOM Joint Laboratory for Superintense Lasers and the Applications, Shanghai 201210, China
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30
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Vasdev A, Kamboj S, Sirohi A, Mandal M, Marik S, Singh RP, Sheet G. Field induced hysteretic structural phase switching and possible CDW in Re-doped MoTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:255401. [PMID: 33857934 DOI: 10.1088/1361-648x/abf883] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Accepted: 04/15/2021] [Indexed: 06/12/2023]
Abstract
Novel electronic systems displaying exotic physical properties can be derived from complex topological materials through chemical doping. MoTe2, the candidate type-II Weyl semimetal shows dramatically enhanced superconductivity up to 4.1 K upon Re doping in Mo sites. Based on bulk transport and local scanning tunnelling microscopy here we show that Re doping also leads to the emergence of a possible charge density wave phase in Re0.2Mo0.8Te2. In addition, the tunnellingI-Vcharacteristics display non-linearity and hysteresis which is commensurate with a hysteresis observed in the change in tip-height (z) as a function of applied voltageV. The observations indicate an electric field induced hysteretic switching consistent with piezoelectricity and possible ferroelectricity.
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Affiliation(s)
- Aastha Vasdev
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, India
| | - Suman Kamboj
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, India
| | - Anshu Sirohi
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, India
| | - Manasi Mandal
- Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India
| | - Sourav Marik
- Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India
| | - Ravi Prakash Singh
- Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India
| | - Goutam Sheet
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, India
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31
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Topologically Protected Wormholes in Type-III Weyl Semimetal Co3In2X2 (X = S, Se). CONDENSED MATTER 2021. [DOI: 10.3390/condmat6020018] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
The observation of wormholes has proven to be difficult in the field of astrophysics. However, with the discovery of novel topological quantum materials, it is possible to observe astrophysical and particle physics effects in condensed matter physics. It is proposed in this work that wormholes can exist in a type-III Weyl phase. In addition, these wormholes are topologically protected, making them feasible to create and measure in condensed matter systems. Finally, Co3In2X2 (X = S, Se) are identified as ideal type-III Weyl semimetals and experiments are put forward to confirm the existence of a type-III Weyl phase.
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32
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Li S, Zhang X, Bao H. Thermal transport by electrons and phonons in PdTe 2: an ab initio study. Phys Chem Chem Phys 2021; 23:5956-5962. [PMID: 33666601 DOI: 10.1039/d0cp06101h] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Palladium ditelluride (PdTe2) is expected to have great promise in electronics and quantum computing due to its exotic type-II Dirac fermions. Although the electronic structure and electrical transport properties of PdTe2 have been comprehensively investigated, its thermal transport properties have not been well understood yet. In this work, we study the lattice and electronic thermal conductivity of PdTe2 using mode-level ab initio calculations. We find its thermal conductivity is ∼35 W m-1 K-1 on the a-axis at room temperature, mainly attributed to the strong lattice anharmonicity and electron-phonon interactions. The lattice thermal conductivity is smaller than 2 W m-1 K-1 and it only contributes a small ratio of ∼5% to the total thermal conductivity. The electronic thermal conductivity is relatively small compared to common metals mainly due to the strong electron-phonon scattering. The Lorenz ratio has a large deviation from the Sommerfeld value below 200 K. In addition, the mean free path of the phonons is about five times larger than that of the electrons. Our results provide a thorough understanding of the thermal transport in PdTe2 and can be helpful in the design of PdTe2-based devices.
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Affiliation(s)
- Shouhang Li
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Xinyu Zhang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Hua Bao
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
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33
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High-frequency rectifiers based on type-II Dirac fermions. Nat Commun 2021; 12:1584. [PMID: 33707448 PMCID: PMC7952558 DOI: 10.1038/s41467-021-21906-w] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Accepted: 02/18/2021] [Indexed: 11/21/2022] Open
Abstract
The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging. High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe2-based device allowing for efficient THz detection.
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34
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Hooda MK, Yadav CS, Samal D. Electronic and topological properties of group-10 transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:103001. [PMID: 33570047 DOI: 10.1088/1361-648x/abd0c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The group 10 transition metal dichalcogenides (TMDs) (MX 2: M = Ni, Pd, Pt; X = S, Se, Te) have attracted much attention in the last few decades because of observation of exotic phases and phenomena such as superconductivity (SC), topological surface states (TSSs), type II Dirac fermions, helical spin texture, Rashba effect, 3D Dirac plasmons, metal-insulator transitions, charge density waves (CDW) etc. In this review, we cover the experimental and theoretical progress on the physical phenomena influenced by the strong electron-electron correlation of the group-10 TMDs from the past to the present. We have especially emphasized on the SC and topological phases in the bulk as well as in atomically thin materials.
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Affiliation(s)
- M K Hooda
- Institute of Physics, Bhubaneswar, Bhubaneswar-751005, India
| | - C S Yadav
- School of Basic Sciences, Indian Institute of Technology Mandi, Mandi-175005 (HP), India
| | - D Samal
- Institute of Physics, Bhubaneswar, Bhubaneswar-751005, India
- Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400085, India
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35
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King PDC, Picozzi S, Egdell RG, Panaccione G. Angle, Spin, and Depth Resolved Photoelectron Spectroscopy on Quantum Materials. Chem Rev 2021; 121:2816-2856. [PMID: 33346644 DOI: 10.1021/acs.chemrev.0c00616] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
The role of X-ray based electron spectroscopies in determining chemical, electronic, and magnetic properties of solids has been well-known for several decades. A powerful approach is angle-resolved photoelectron spectroscopy, whereby the kinetic energy and angle of photoelectrons emitted from a sample surface are measured. This provides a direct measurement of the electronic band structure of crystalline solids. Moreover, it yields powerful insights into the electronic interactions at play within a material and into the control of spin, charge, and orbital degrees of freedom, central pillars of future solid state science. With strong recent focus on research of lower-dimensional materials and modified electronic behavior at surfaces and interfaces, angle-resolved photoelectron spectroscopy has become a core technique in the study of quantum materials. In this review, we provide an introduction to the technique. Through examples from several topical materials systems, including topological insulators, transition metal dichalcogenides, and transition metal oxides, we highlight the types of information which can be obtained. We show how the combination of angle, spin, time, and depth-resolved experiments are able to reveal "hidden" spectral features, connected to semiconducting, metallic and magnetic properties of solids, as well as underlining the importance of dimensional effects in quantum materials.
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Affiliation(s)
- Phil D C King
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom
| | - Silvia Picozzi
- Consiglio Nazionale delle Ricerche, CNR-SPIN, Via dei Vestini 31, Chieti 66100, Italy
| | - Russell G Egdell
- Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom
| | - Giancarlo Panaccione
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy
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36
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Mandal M, Singh RP. Emergent superconductivity by Re doping in type -II Weyl semimetal NiTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:135602. [PMID: 33406510 DOI: 10.1088/1361-648x/abd8f3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2020] [Accepted: 01/06/2021] [Indexed: 06/12/2023]
Abstract
Recently topological semimetals emerge as a new platform to realise topological superconductivity. Here we report the emergent superconductivity in single-crystals of Re doped type-II Weyl semimetal NiTe2. The magnetic and transport measurements highlight that Re substitution in Ni-site induces superconductivity at a maximum temperature of 2.36 K. Hall effect and specific heat measurements indicate that Re substitution is doping hole and facilitates the emergence of superconductivity by phonon softening and enhancing the electron-phonon coupling.
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Affiliation(s)
- Manasi Mandal
- Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India
| | - R P Singh
- Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India
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37
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Yu P, Zeng Q, Zhu C, Zhou L, Zhao W, Tong J, Liu Z, Yang G. Ternary Ta 2 PdS 6 Atomic Layers for an Ultrahigh Broadband Photoresponsive Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005607. [PMID: 33251704 DOI: 10.1002/adma.202005607] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2020] [Revised: 11/13/2020] [Indexed: 06/12/2023]
Abstract
2D noble-transition-metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta2 PdS6 atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42 × 106 A W-1 , detectivity of 7.1 × 1010 Jones and a high photoconductive gain of 2.7 × 106 under laser illumination at a wavelength of 633 nm with a power of 0.025 W m-2 , which is ascribed to a photogating effect via study of the device band profiles. Especially, few-layer Ta2 PdS6 exhibits a good broadband photoresponse, ranging from 450 nm in the ultraviolet region to 1450 nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm2 V-1 s-1 , Ion /Ioff ratio of 106 , and a one-year air stability, which is better than those of most reported 2D materials. Our studies underscore Ta2 PdS6 as a promising 2D material for nano-electronic and nano-optoelectronic applications.
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Affiliation(s)
- Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Liujiang Zhou
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Weina Zhao
- Guangdong Key Laboratory of Environmental Catalysis and Health Risk Control, School of Environmental Science and Engineering, Institute of Environmental Health and Pollution Control, Guangdong University of Technology, Guangzhou, 510006, P.R. China
| | - Jinchao Tong
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
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38
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Chapai R, Browne DA, Graf DE, DiTusa JF, Jin R. Quantum oscillations with angular dependence in PdTe 2single crystals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 33:035601. [PMID: 33078715 DOI: 10.1088/1361-648x/abb548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2020] [Accepted: 09/04/2020] [Indexed: 06/11/2023]
Abstract
The layered transition-metal dichalcogenide PdTe2has been discovered to possess bulk Dirac points as well as topological surface states. By measuring the magnetization (up to 7 T) and magnetic torque (up to 35 T) in single crystalline PdTe2, we observe distinct de Haas-van Alphen (dHvA) oscillations. Eight frequencies are identified withH||c, with two low frequencies (Fα= 8 T andFβ= 117 T) dominating the spectrum. The effective masses obtained by fitting the Lifshitz-Kosevich (LK) equation to the data aremα*=0.059m0andmβ*=0.067m0wherem0is the free electron mass. The corresponding Landau fan diagrams allow the determination of the Berry phase for these oscillations resulting in values of ∼0.67πfor the 3D α band (hole-type) (down to the 1st Landau level) and ∼0.23π-0.73πfor the 3D β band (electron-type) (down to the 3rd Landau level). By investigating the angular dependence of the dHvA oscillations, we find that the frequencies and the corresponding Berry phase (ΦB) vary with the field direction, with a ΦB∼ 0 whenHis 10°-30° away from theabplane for both α and β bands. The multiple band nature of PdTe2is further confirmed from Hall effect measurements.
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Affiliation(s)
- Ramakanta Chapai
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - D A Browne
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - David E Graf
- National High Magnetic Field Laboratory, Tallahassee, FL 32310, United States of America
| | - J F DiTusa
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - Rongying Jin
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
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39
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Jiang K, Cui A, Shao S, Feng J, Dong H, Chen B, Wang Y, Hu Z, Chu J. New Pressure Stabilization Structure in Two-Dimensional PtSe 2. J Phys Chem Lett 2020; 11:7342-7349. [PMID: 32787291 DOI: 10.1021/acs.jpclett.0c01813] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The frequency shifts and lattice dynamics to unveil the vibrational properties of platinum diselenide (PtSe2) are investigated using pressure-dependent polarized Raman scattering at room temperature up to 25 GPa. The two phonon modes Eg and A1g display similar hardening trends; both the Raman peak positions and full widths at half-maximum have distinct mutation phenomena under high pressure. Especially, the split Eg mode at 4.3 GPa confirms the change of the lattice symmetry. With the aid of the first-principles calculations, a new pressure stabilization structure C2/m of PtSe2 has been found to be in good agreement with experiments. The band structures calculations reveal that the new phase is a novel type-I Dirac semimetal. The results demonstrate that the pressure-dependent Raman spectra combined with theoretical predictions may open a new window for searching and controlling the phase structure and Dirac cones of two-dimensional materials.
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Affiliation(s)
- Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Sen Shao
- State Key Laboratory of Superhard Materials & International Center for Computational Method and Software, Jilin University, Changchun 130012, China
| | - Jiajia Feng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Yanchao Wang
- State Key Laboratory of Superhard Materials & International Center for Computational Method and Software, Jilin University, Changchun 130012, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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40
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Liu Y, Xu Y, Sun J, Liu C, Liu Y, Wang C, Zhang Z, Gu K, Tang Y, Ding C, Liu H, Yao H, Lin X, Wang L, Xue QK, Wang J. Type-II Ising Superconductivity and Anomalous Metallic State in Macro-Size Ambient-Stable Ultrathin Crystalline Films. NANO LETTERS 2020; 20:5728-5734. [PMID: 32584045 DOI: 10.1021/acs.nanolett.0c01356] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent emergence of two-dimensional (2D) crystalline superconductors has provided a promising platform to investigate novel quantum physics and potential applications. To reveal essential quantum phenomena therein, ultralow temperature transport investigation on high-quality ultrathin superconducting films is critically required, although it has been quite challenging experimentally. Here, we report a systematic transport study on the ultrathin crystalline PdTe2 films grown by molecular beam epitaxy (MBE). Interestingly, a new type of Ising superconductivity in 2D centrosymmetric materials is revealed by the detection of large in-plane critical field more than 7 times the Pauli limit. Remarkably, in a perpendicular magnetic field, we provide solid evidence of an anomalous metallic state characterized by the resistance saturation at low temperatures with high-quality filters. The robust superconductivity with intriguing quantum phenomena in the macro-size ambient-stable ultrathin PdTe2 films remains almost the same for 20 months, showing great potentials in electronic and spintronic applications.
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Affiliation(s)
- Yi Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yong Xu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science, Wako, Saitama 351-0198, Japan
| | - Jian Sun
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Chong Liu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yanzhao Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Chong Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
| | - Zetao Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Kaiyuan Gu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yue Tang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Cui Ding
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Haiwen Liu
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Hong Yao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
| | - Xi Lin
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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41
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Shi J, Huan Y, Xiao M, Hong M, Zhao X, Gao Y, Cui F, Yang P, Pennycook SJ, Zhao J, Zhang Y. Two-Dimensional Metallic NiTe 2 with Ultrahigh Environmental Stability, Conductivity, and Electrocatalytic Activity. ACS NANO 2020; 14:9011-9020. [PMID: 32579341 DOI: 10.1021/acsnano.0c03940] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs) supply a versatile platform for investigating newfangled physical issues and developing potential applications in electronics/spintronics/electrocatalysis. Among these, NiTe2 (a type-II Dirac semimetal) possesses a Dirac point near its Fermi level. However, as-prepared 2D MTMDCs are mostly environmentally unstable, and little attention has been paid to synthesizing such materials. Herein, a general chemical vapor deposition (CVD) approach has been designed to prepare thickness-tunable and large-domain (∼1.5 mm) 1T-NiTe2 on an atomically flat mica substrate. Significantly, ultrahigh conductivity (∼1.15 × 106 S m-1) of CVD-synthesized 1T-NiTe2 and high catalytic activity in pH-universal hydrogen evolution reaction have been uncovered. More interestingly, the 2D 1T-NiTe2 maintains robust environmental stability for more than one year and even after a variety of harsh treatments. These results hereby fill an existing research gap in synthesizing environmentally stable 2D MTMDCs, making fundamental progress in developing 2D MTMDC-based devices/catalysts.
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Affiliation(s)
- Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yinlu Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
| | - Fangfang Cui
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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42
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Yan Z, Wu Z, Huang W. Vortex End Majorana Zero Modes in Superconducting Dirac and Weyl Semimetals. PHYSICAL REVIEW LETTERS 2020; 124:257001. [PMID: 32639774 DOI: 10.1103/physrevlett.124.257001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2019] [Revised: 06/01/2020] [Accepted: 06/02/2020] [Indexed: 06/11/2023]
Abstract
Time-reversal invariant Dirac and Weyl semimetals in three dimensions (3D) can host open Fermi arcs and spin-momentum locking Fermi loops on the surfaces. We find that when they become superconducting with s-wave pairing and the doping is lower than a critical level, straight π-flux vortex lines terminating at surfaces with Fermi arcs or spin-momentum locking Fermi loops can realize 1D topological superconductivity and harbor Majorana zero modes at their ends. Remarkably, we find that the vortex-generation-associated Zeeman field can open (when the surfaces have only Fermi arcs) or enhance the topological gap protecting Majorana zero modes, which is contrary to the situation in superconducting topological insulators. By studying the tilting effect of bulk Dirac and Weyl cones, we further find that type-I Dirac and Weyl semimetals in general have a much broader topological regime than type-II ones. Our findings build up a connection between time-reversal invariant Dirac and Weyl semimetals and Majorana zero modes in vortices.
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Affiliation(s)
- Zhongbo Yan
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Zhigang Wu
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
| | - Wen Huang
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
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Kempt R, Kuc A, Heine T. Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides. Angew Chem Int Ed Engl 2020; 59:9242-9254. [PMID: 32065703 PMCID: PMC7463173 DOI: 10.1002/anie.201914886] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2019] [Indexed: 11/07/2022]
Abstract
Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.
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Affiliation(s)
- Roman Kempt
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
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44
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Zhang J, Huang GQ. The superconductivity and topological surface state of type-II Dirac semimetal NiTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:205702. [PMID: 31978915 DOI: 10.1088/1361-648x/ab6f84] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
NiTe2 is a type-II Dirac semimetal with the Dirac point very close to the Fermi level. In this paper, its electronic structure, phonon structure and electron-phonon interaction are studied via first-principles calculations. The noteworthy result is that the nontrival bands around the type-II Dirac point are strongly coupled with phonon modes, suggesting that they play an important role in superconductivity. Furthermore, the topological surface states on the (0 0 1) cleavage plane originated from the nontrivial Z 2 are well separated from the bulk states and can be tuned to approach the Fermi level by adding holes or by V substitution. The possible topological superconductivity in type-II Dirac semimetal NiTe2 is discussed.
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Affiliation(s)
- Jie Zhang
- Department of Physics, Nanjing Normal University, Nanjing 210023, People's Republic of China
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45
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Pyrialakos GG, Schmitt N, Nye NS, Heinrich M, Kantartzis NV, Szameit A, Christodoulides DN. Symmetry-controlled edge states in the type-II phase of Dirac photonic lattices. Nat Commun 2020; 11:2074. [PMID: 32350272 PMCID: PMC7190735 DOI: 10.1038/s41467-020-15952-z] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Accepted: 03/30/2020] [Indexed: 11/09/2022] Open
Abstract
The exceptional properties exhibited by two-dimensional materials, such as graphene, are rooted in the underlying physics of the relativistic Dirac equation that describes the low energy excitations of such molecular systems. In this study, we explore a periodic lattice that provides access to the full solution spectrum of the extended Dirac Hamiltonian. Employing its photonic implementation of evanescently coupled waveguides, we indicate its ability to independently perturb the symmetries of the discrete model (breaking, also, the barrier towards the type-II phase) and arbitrarily define the location, anisotropy, and tilt of Dirac cones in the bulk. This unique aspect of topological control gives rise to highly versatile edge states, including an unusual class that emerges from the type-II degeneracies residing in the complex space of k. By probing these states, we investigate the topological nature of tilt and shed light on novel transport dynamics supported by Dirac configurations in two dimensions.
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Affiliation(s)
- Georgios G Pyrialakos
- Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece
| | - Nora Schmitt
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, 18059, Rostock, Germany
| | - Nicholas S Nye
- Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece.,College of Optics & Photonics-CREOL, University of Central Florida, Orlando, FL, 2816, USA
| | - Matthias Heinrich
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, 18059, Rostock, Germany
| | - Nikolaos V Kantartzis
- Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece
| | - Alexander Szameit
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, 18059, Rostock, Germany
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46
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Kempt R, Kuc A, Heine T. Zweidimensionale Edelmetallchalkogenide und ‐phosphochalkogenide. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.201914886] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Roman Kempt
- Fakultät für Chemie und LebensmittelchemieTechnische Universität Dresden Bergstrasse 66 01069 Dresden Deutschland
| | - Agnieszka Kuc
- Institut für RessourcenökologieHelmholtz-Zentrum Dresden-Rossendorf Permoserstrasse 15 04318 Leipzig Deutschland
| | - Thomas Heine
- Fakultät für Chemie und LebensmittelchemieTechnische Universität Dresden Bergstrasse 66 01069 Dresden Deutschland
- Institut für RessourcenökologieHelmholtz-Zentrum Dresden-Rossendorf Permoserstrasse 15 04318 Leipzig Deutschland
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47
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Vasdev A, Sirohi A, Hooda MK, Yadav CS, Sheet G. Enhanced, homogeneously type-II superconductivity in Cu-intercalated PdTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:125701. [PMID: 31756726 DOI: 10.1088/1361-648x/ab5ac4] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Though the superconducting phase of the type-II Dirac semimetal PdTe2 was shown to be conventional in nature, the phase continued to be interesting in terms of its magnetic properties. While certain experiments indicated an unexpected type-I superconducting phase, other experiments revealed formation of vortices under the application of magnetic fields. Recently, scanning tunneling spectroscopy (STS) experiments revealed the existence of a mixed phase where type-I and type-II behaviours coexist. Here, based on our temperature and magnetic field dependent STS experiments on Cu-intercalated PdTe2, we show that as the critical temperature of the superconducting phase goes up from 1.7 K to 2.4 K on Cu-intercalation, the mixed phase disappears and the system becomes homogeneously type-II. This may be attributed to an averaging effect caused by quasiparticle exchange between type-I and type-II domains mediated by the Cu atoms and to decreased coherence length due to increased disorder.
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Affiliation(s)
- Aastha Vasdev
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Mohali, Punjab, India
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48
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Sadhukhan K, Politano A, Agarwal A. Novel Undamped Gapless Plasmon Mode in a Tilted Type-II Dirac Semimetal. PHYSICAL REVIEW LETTERS 2020; 124:046803. [PMID: 32058735 DOI: 10.1103/physrevlett.124.046803] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Indexed: 06/10/2023]
Abstract
We predict the existence of a novel long-lived gapless plasmon mode in a type-II Dirac semimetal (DSM). This gapless mode arises from the out-of-phase oscillations of the density fluctuations in the electron and the hole pockets of a type-II DSM. It originates beyond a critical wave vector along the direction of the tilt axis, owing to the momentum separation of the electron and hole pockets. A similar out-of-phase plasmon mode arises in other multicomponent charged fluids as well, but generally, it is Landau damped and lies within the particle-hole continuum. In the case of a type-II DSM, the open Fermi surface prohibits low-energy finite momentum single-particle excitations, creating a "gap" in the particle-hole continuum. The gapless plasmon mode lies within this particle-hole continuum gap and, thus, it is protected from Landau damping.
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Affiliation(s)
- Krishanu Sadhukhan
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - Antonio Politano
- Dipartimento di Scienze Fisiche e Chimiche (DSFC), Università dell'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy
- CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
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49
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Leng H, Ohmura A, Anh LN, Ishikawa F, Naka T, Huang YK, de Visser A. Superconductivity under pressure in the Dirac semimetal PdTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:025603. [PMID: 31574487 DOI: 10.1088/1361-648x/ab49b5] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The Dirac semimetal PdTe2 was recently reported to be a type-I superconductor (T c = 1.64 K, [Formula: see text] mT) with unusual superconductivity of the surface sheath. We here report a high-pressure study, [Formula: see text] GPa, of the superconducting phase diagram extracted from ac-susceptibility and transport measurements on single crystalline samples. T c (p ) shows a pronounced non-monotonous variation with a maximum T c = 1.91 K around 0.91 GPa, followed by a gradual decrease to 1.27 K at 2.5 GPa. Surface superconductivity is robust under pressure as demonstrated by the large superconducting screening signal that persists for applied dc-fields [Formula: see text]. Surprisingly, for [Formula: see text] GPa the superconducting transition temperature at the surface [Formula: see text] is larger than T c of the bulk. Therefore surface superconductivity may possibly have a non-trivial topological nature. We compare the measured pressure variation of T c with recent results from band structure calculations and discuss the importance of a Van Hove singularity.
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Affiliation(s)
- H Leng
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - A Ohmura
- Pacific Rim Solar Fuel System Research Center, Niigata University, 8050, Ikarashi 2-no-cho, Nishi-ku, Niigata, 950-2181, Japan
- Faculty of Science, Niigata University, 8050, Ikarashi 2-no-cho, Nishi-ku, Niigata, 950-2181, Japan
| | - L N Anh
- International Training Institute for Materials Science, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi, Vietnam
| | - F Ishikawa
- Faculty of Science, Niigata University, 8050, Ikarashi 2-no-cho, Nishi-ku, Niigata, 950-2181, Japan
| | - T Naka
- National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
| | - Y K Huang
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - A de Visser
- Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
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50
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Li H, Liu J, Guo N, Xiao L, Zhang H, Zhou S, Wu Y, Fan S. Seeded growth of high-quality transition metal dichalcogenide single crystals via chemical vapor transport. CrystEngComm 2020. [DOI: 10.1039/d0ce01295e] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
Seeded chemical vapor transport growth gives high-quality and millimeter-sized transition metal dichalcogenide single crystals in a short period.
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Affiliation(s)
- Hao Li
- School of Materials Science and Engineering
- Tsinghua University
- Beijing
- P. R. China
- Tsinghua-Foxconn Nanotechnology Research Center
| | - Junku Liu
- Qian Xuesen Laboratory of Space Technology
- China Academy of Space Technology
- Beijing 100094
- P. R. China
| | - Nan Guo
- Qian Xuesen Laboratory of Space Technology
- China Academy of Space Technology
- Beijing 100094
- P. R. China
| | - Lin Xiao
- Qian Xuesen Laboratory of Space Technology
- China Academy of Space Technology
- Beijing 100094
- P. R. China
| | - Haoxiong Zhang
- State Key Laboratory of Low Dimensional Quantum Physics
- Department of Physics
- Tsinghua University
- Beijing 100084
- P. R. China
| | - Shuyun Zhou
- State Key Laboratory of Low Dimensional Quantum Physics
- Department of Physics
- Tsinghua University
- Beijing 100084
- P. R. China
| | - Yang Wu
- Tsinghua-Foxconn Nanotechnology Research Center
- Tsinghua University
- Beijing
- P. R. China
- Department of Mechanical Engineering
| | - Shoushan Fan
- Tsinghua-Foxconn Nanotechnology Research Center
- Tsinghua University
- Beijing
- P. R. China
- State Key Laboratory of Low Dimensional Quantum Physics
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