Externally Controlled Magnetism and Band Gap in Twisted Bilayer Graphene

Engineering Flat Bands in Twisted-Bilayer Graphene away from the Magic Angle with Chiral Optical Cavities

Twisted bilayer graphene (TBG) is a recently discovered two-dimensional superlattice structure which exhibits strongly correlated quantum many-body physics, including strange metallic behavior and unconventional superconductivity. Most of TBG exotic properties are connected to the emergence of a pair of isolated and topological flat electronic bands at the so-called magic angle, θ≈1.05°, which are nevertheless very fragile. In this work, we show that, by employing chiral optical cavities, the topological flat bands can be stabilized away from the magic angle in an interval of approximately 0.8°<θ<1.3°. As highlighted by a simplified theoretical model, time reversal symmetry breaking (TRSB), induced by the chiral nature of the cavity, plays a fundamental role in flattening the isolated bands and gapping out the rest of the spectrum. Additionally, TRSB suppresses the Berry curvature and induces a topological phase transition, with a gap closing at the Γ point, towards a band structure with two isolated flat bands with Chern number equal to 0. The efficiency of the cavity is discussed as a function of the twisting angle, the light-matter coupling and the optical cavity characteristic frequency. Our results demonstrate the possibility of engineering flat bands in TBG using optical devices, extending the onset of strongly correlated topological electronic phases in moiré superlattices to a wider range in the twisting angle.

Effect of doping and defects on the optoelectronic properties of ZrSe2 based on the first principle

CONTEXT

Based on the first principles under the framework of density functional theory, it calculates the effect of vacancy defects in single Zr and single Se atoms and the replacement of Se atoms in ZrSe2 with O, Se, and Te atoms on the optoelectronic properties of monolayer ZrSe2, including geometry, energy band structure, electronic density of states, and optical properties. The doping of the three non-metallic atoms was n-type doping for the O and S atoms and p-type doping for the Te atom. Defects in the Zr atoms and O-atom doping significantly affect the peak reflectance and absorption coefficient of the ZrSe2 system.

METHODS

All Density Functional Theory calculations were carried out using the CASTEP module in the Materials-Studio (MS) software. The generalized gradient approximation plane-wave pseudopotential method and the Perdew-Burke-Ernzerfhof (PBE) generalized function were used for structural optimization and total energy calculation of the defect and doping systems. After convergence tests, the plane wave truncation energy was set to 500 eV, and the Brillouin zone K-point grid was set to 4 × 4 × 1. The atomic energy convergence criterion is 1.0 × 10-6 eV/atom, the interatomic interaction force convergence criterion is 0.02 eV/Å, the maximum atomic displacement convergence criterion is 0.001 Å, and the internal crystal stress convergence criterion is 0.05 GPa. In order to avoid the influence of the interaction forces between the layers, a vacuum layer of 15 Å is placed in the Z-axis direction.

Diamane-like Films Based on Twisted G/BN Bilayers: DFT Modelling of Atomic Structures and Electronic Properties

Diamanes are unique 2D carbon materials that can be obtained by the adsorption of light atoms or molecular groups onto the surfaces of bilayer graphene. Modification of the parent bilayers, such as through twisting of the layers and the substitution of one of the layers with BN, leads to drastic changes in the structure and properties of diamane-like materials. Here, we present the results of the DFT modelling of new stable diamane-like films based on twisted Moiré G/BN bilayers. The set of angles at which this structure becomes commensurate was found. We used two commensurate structures with twisted angles of θ = 10.9° and θ = 25.3° with the smallest period as the base for the formation of the diamane-like material. Previous theoretical investigations did not take into account the incommensurability of graphene and boron nitride monolayers when considering diamane-like films. The double-sided hydrogenation or fluorination of Moiré G/BN bilayers and the following interlayer covalent bonding led to the opening of a gap up to 3.1 eV, which was lower than the corresponding values of h-BN and c-BN. The considered G/BN diamane-like films offer great potential in the future for a variety of engineering applications.

First-principles calculation of gate-tunable ferromagnetism in magic-angle twisted bilayer graphene under pressure

Magic-angle twisted bilayer graphene (MATBG) is notable as a highly tunable platform for investigating strongly correlated phenomena such as unconventional superconductivity and quantum spin liquids, due to easy control of doping level through gating and sensitive dependence of the magic angle on hydrostatic pressure. Experimental observations of correlated insulating states, unconventional superconductivity and ferromagnetism in MATBG indicate that this system exhibits rich exotic phases. In this work, using density functional theory calculations in conjunction with the effective screening medium method, we find the MATBG under pressure at a twisting angle of 2.88^∘and simulate how its electronic states evolve when doping level and electric field perpendicular to plane are tuned by gating. Our calculations show that, at doping levels between two electrons and four holes per moiré unit cell, a ferromagnetic (FM) solution with spin density localized at AA stacking sites is lower in energy than the nonmagnetic solution. The magnetic moment of this FM state decreases with both electron and hole doping and vanishes at four electrons/holes doped per moiré unit cell. Hybridization between the flat bands at the Fermi level and the surrounding dispersive bands can take place at finite doping. On increasing the out-of-plane electric field at zero doping, a transition from the FM state to the nonmagnetic one is seen. An investigation of impurity effects shows that both absorption ofO2molecules and occurrence of Stone-Wales impurities suppress the FM state, and the mechanisms are understood from our calculations. We also analyze the interlayer bonding character due to flat bands via Wannier functions. Finally, we report trivial band topology of the flat bands in the FM state at a certain doping level.

Emulating Heavy Fermions in Twisted Trilayer Graphene

Twisted van der Waals materials have been shown to host a variety of tunable electronic structures. Here we put forward twisted trilayer graphene (TTG) as a platform to emulate heavy fermion physics. We demonstrate that TTG hosts extended and localized modes with an electronic structure that can be controlled by interlayer bias. In the presence of interactions, the existence of localized modes leads to the development of local moments, which are Kondo coupled to coexisting extended states. By electrically controlling the effective exchange between local moments, the system can be driven from a magnetic into a heavy fermion regime, passing through a quantum critical point, allowing one to electrically explore a generalized Doniach phase diagram. Our results put forward twisted graphene multilayers as a platform for the realization of strongly correlated heavy fermion physics in a purely carbon-based platform.

Theoretical perspective on the electronic structure and optoelectronic properties of type-II SiC/CrS2van der Waals heterostructure with high carrier mobilities

Two-dimensional heterostructures formed by stacking layered materials play a significant role in condensed matter physics and materials science due to their potential applications in high-efficiency nanoelectronic and optoelectronic devices. In this paper, the structural, electronic, and optical properties of SiC/CrS₂van der Waals heterostructure (vdWHs) have been investigated by means of density functional theory calculations. It is confirmed that the SiC/CrS₂vdWHs is energetically and thermodynamically stable indicating its great promise for experimental realization. We find that the SiC/CrS₂vdWHs has a direct-band gap and type-II (staggered) band alignment, which can effectively separate the photo-induced electrons and holes pairs and extend their life time. The carrier mobilities of electrons and holes along the armchair and zigzag directions are as high as 6.621 × 10³and 6.182 × 10⁴ cm² V^-1 s^-1, respectively. Besides, the charge difference and potential drop across the interface can induce a large built-in electric field across the heterojunction, which will further hinder the electron and hole recombination. The SiC/CrS₂vdWHs has enhanced optical absorption capability compared to individual monolayers. This study demonstrates that the SiC/CrS₂vdWHs is a good candidate for application in the nanoelectronic and optoelectronic devices.

Layer-engineered large-area exfoliation of graphene

The competition between quality and productivity has been a major issue for large-scale applications of two-dimensional materials (2DMs). Until now, the top-down mechanical cleavage method has guaranteed pure perfect 2DMs, but it has been considered a poor option in terms of manufacturing. Here, we present a layer-engineered exfoliation technique for graphene that not only allows us to obtain large-size graphene, up to a millimeter size, but also allows selective thickness control. A thin metal film evaporated on graphite induces tensile stress such that spalling occurs, resulting in exfoliation of graphene, where the number of exfoliated layers is adjusted by using different metal films. Detailed spectroscopy and electron transport measurement analysis greatly support our proposed spalling mechanism and fine quality of exfoliated graphene. Our layer-engineered exfoliation technique can pave the way for the development of a manufacturing-scale process for graphene and other 2DMs in electronics and optoelectronics.

Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely R0° rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a preoriented template to induce the unconventional orientation. Using spot profile analysis low-energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.

Electrically Tunable Flat Bands and Magnetism in Twisted Bilayer Graphene

Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moiré superlattice. Such superlattices are known to host bulk valley currents at tiny angles (α≈0.3°) and flat bands at magic angles (α≈1°). We show that tuning the twist angle to α^{*}≈0.8° generates flat bands away from charge neutrality with a triangular superlattice periodicity. When doped with ±6 electrons per moiré cell, these bands are half-filled and electronic interactions produce a symmetry-broken ground state (Stoner instability) with spin-polarized regions that order ferromagnetically. Application of an interlayer electric field breaks inversion symmetry and introduces valley-dependent dispersion that quenches the magnetic order. With these results, we propose a solid-state platform that realizes electrically tunable strong correlations.

Band structure engineering of SnS2/polyphenylene van der Waals heterostructure via interlayer distance and electric field

Constructing a van der Waals heterostructure (vdWH) by stacking different two-dimensional (2D) materials has been considered to be an effective strategy to obtain the desired properties.