Intrinsic Spin-Orbit Torque Arising from the Berry Curvature in a Metallic-Magnet/Cu-Oxide Interface

Impact of inherent energy barrier on spin-orbit torques in magnetic-metal/semimetal heterojunctions

Spintronic devices are based on heterojunctions of two materials with different magnetic and electronic properties. Although an energy barrier is naturally formed even at the interface of metallic heterojunctions, its impact on spin transport has been overlooked. Here, using diffusive spin Hall currents, we provide evidence that the inherent energy barrier governs the spin transport even in metallic systems. We find a sizable field-like torque, much larger than the damping-like counterpart, in Ni81Fe19/Bi0.1Sb0.9 bilayers. This is a distinct signature of barrier-mediated spin-orbit torques, which is consistent with our theory that predicts a strong modification of the spin mixing conductance induced by the energy barrier. Our results suggest that the spin mixing conductance and the corresponding spin-orbit torques are strongly altered by minimizing the work function difference in the heterostructure. These findings provide a new mechanism to control spin transport and spin torque phenomena by interfacial engineering of metallic heterostructures.

Gate-Tunable Spin Hall Effect in an All-Light-Element Heterostructure: Graphene with Copper Oxide

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback for exhibiting a sizable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 ± 0.6 nm at 100 K) around the charge neutrality point. This all-light-element heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication.

Enhanced Spin Current in Ni81 Fe19 /Cu-CuOx Bilayer with Top and Sideways Oxidization

Generation and manipulation of spin current are the cores of spintronic devices, which are intensely pursued. Heavy metals with strong spin-orbit coupling are commonly used for the generation of spin current, but are incompatible with the mass production of devices, and the polarization of spin current is limited to be in-plane. Here, it is shown that the spin current with strong out-of-plane polarization component can be generated and transmitted in Ni₈₁ Fe₁₉ /Cu-CuO_x bilayer with sideways and top oxidizations. The charge-to-spin current conversion efficiency can be enhanced through the spin currents consisting of both out-of-plane polarization (σ_z ) and in-plane polarization (σ_y ) induced by spin-vorticity coupling. Such a spin current is demonstrated to be closely related to the lateral oxidization gradient and can be controlled by changing the temperatures and times of annealing. The finding here provides a novel degree of freedom to produce and control the spin current in spintronic devices.

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81 Fe19 /CuOx /TaN Heterostructure

The orbital Hall effect and the interfacial Rashba effect provide new approaches to generate orbital current and spin-orbit torque (SOT) efficiently without the use of heavy metals. However, achieving efficient dynamic control of orbital current and SOT in light metal oxides has proven challenging. In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni₈₁ Fe₁₉ /CuO_x /TaN heterostructures with various CuO_x oxidization concentrations. The ionic liquid gating induces the migration of oxygen ions, which modulates the oxygen concentration at the Ni₈₁ Fe₁₉ /CuO_x interface, leading to reversible manipulation of the magnetoresistance effect and SOT. The existence of a thick TaN capping layer allows for sophisticated internal oxygen ion reconstruction in the CuO_x layer, rather than conventional external ion exchange. These results provide a method for the reversible and dynamic manipulation of the orbital current and SOT generation efficiency, thereby advancing the development of spin-orbitronic devices through ionic engineering.

Generation and manipulation of current-induced spin-orbit torques

An emerging field of spintronics, spin-orbitronics, aims to discover novel phenomena and functionalities originating from spin-orbit coupling in solid-state devices. The development of spin-orbitronics promises a fundamental understanding of spin physics in condensed matter, as well as smaller, faster, and far-more energy-efficient spin-based devices. Of particular importance in this field is current-induced spin-orbit torques, which trigger magnetic dynamics by the transfer of angular momentum from an atomic lattice to local magnetization through the spin-orbit coupling. The spin-orbit torque has attracted extensive attention for its fascinating relativistic and quantum mechanical nature, as well as prospective nanoelectronic applications. In this article, we review our studies on the generation and manipulation of current-induced spin-orbit torques.

Roadmap of spin-orbit torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Rashba Effect in Functional Spintronic Devices

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques

Current-induced spin-orbit torques (SOTs) allow for the efficient electrical manipulation of magnetism in spintronic devices. Engineering the SOT efficiency is a key goal that is pursued by maximizing the active interfacial spin accumulation or modulating the nonequilibrium spin density that builds up through the spin Hall and inverse spin galvanic effects. Regardless of the origin, the fundamental requirement for the generation of the current-induced torques is a net spin accumulation. We report on the large enhancement of the SOT efficiency in thulium iron garnet (TmIG)/Pt by capping with a CuO_{x} layer. Considering the weak spin-orbit coupling (SOC) of CuO_{x}, these surprising findings likely result from an orbital current generated at the interface between CuO_{x} and Pt, which is injected into the Pt layer and converted into a spin current by strong SOC. The converted spin current decays across the Pt layer and exerts a "nonlocal" torque on TmIG. This additional torque leads to a maximum colossal enhancement of the SOT efficiency of a factor 16 for 1.5 nm of Pt at room temperature, thus opening a path to increase torques while at the same time offering insights into the underlying physics of orbital transport, which has so far been elusive.

A single layer spin-orbit torque nano-oscillator

Spin torque and spin Hall effect nano-oscillators generate high intensity spin wave auto-oscillations on the nanoscale enabling novel microwave applications in spintronics, magnonics, and neuromorphic computing. For their operation, these devices require externally generated spin currents either from an additional ferromagnetic layer or a material with a high spin Hall angle. Here we demonstrate highly coherent field and current tunable microwave signals from nano-constrictions in single 15–20 nm thick permalloy layers with oxide interfaces. Using a combination of spin torque ferromagnetic resonance measurements, scanning micro-Brillouin light scattering microscopy, and micromagnetic simulations, we identify the auto-oscillations as emanating from a localized edge mode of the nano-constriction driven by spin-orbit torques. Our results pave the way for greatly simplified designs of auto-oscillating nano-magnetic systems only requiring single ferromagnetic layers with oxide interfaces.

Spin torque nano-oscillatiors promise novel microwave applications but the functioning relies on the spin current from additional ferromagnetic or metal layers. The authors here achieved in a single ferromagnetic layer sandwiched by nonmagnetic insulators the spin wave auto-oscillations due to a localized edge mode of the nano-constriction.