1
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Hsueh JW, Kuo LH, Chen PH, Chen WH, Chuang CY, Kuo CN, Lue CS, Shiu HW, Liu BH, Wang CH, Hsu YJ, Lin CL, Chou JP, Luo MF. Decomposition of methanol activated by surface under-coordinated Pd on layered PdTe 2. Phys Chem Chem Phys 2025. [PMID: 40266281 DOI: 10.1039/d5cp00130g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/24/2025]
Abstract
The reactivity of layered PdTe2 toward methanol (CH3OH) decomposition was promoted by surface under-coordinated Pd (denoted as Pduc) generated by removing surface Te with controlled Ar ion bombardment. Methanol on the Pduc sites at surface Te vacancies decomposed through competing dehydrogenation and C-O bond cleavage processes; approximately 26% of methanol was converted to CHx* and 17% to CHxO* (* denotes adspecies; x = 2 and 3) as major intermediates at 180 K, leading to a reaction probability of >40% and an ultimate gaseous production of molecular hydrogen, formaldehyde, methane and water. The characteristic reactivity arose from both geometric and electronic effects-the hexagonal-lattice positioning and partial oxidation of the Pduc; its comparison with that of PtTe2 surface emphasized the critical role of electronic structures in determining the reactivity and selectivity. Notably, these reaction processes produced scarce C* as the intermediate CHx* was preferentially hydrogenated. Our results suggest that a PdTe2 surface with Pduc at surface Te vacancies can serve as an efficient catalyst toward methanol decomposition and against carbon poisoning.
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Affiliation(s)
- Jing-Wen Hsueh
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
| | - Lai-Hsiang Kuo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
| | - Po-Han Chen
- Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2 Kuang Fu Road, Hsinchu 300044, Taiwan
| | - Wan-Hsin Chen
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan.
| | - Chi-Yao Chuang
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan.
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 10601, Taiwan
| | - Chin-Shan Lue
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 10601, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
| | - Hung-Wei Shiu
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Bo-Hong Liu
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Chia-Hsin Wang
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Yao-Jane Hsu
- National Synchrotron Radiation Research Center, No. 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu 300092, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan.
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu 300039, Taiwan
| | - Jyh-Pin Chou
- Graduate School of Advanced Technology, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 106319, Taiwan.
| | - Meng-Fan Luo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan 320317, Taiwan.
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2
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Wang J, Peng Y, Zhou T, Fu J, Quan W, Cheng Y, Ding H, Zhang Y. Direct Syntheses of 2D Noble Transition Metal Dichalcogenides Toward Electronics, Optoelectronics, and Electrocatalysis-Related Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2407233. [PMID: 39924733 DOI: 10.1002/smll.202407233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2024] [Revised: 01/26/2025] [Indexed: 02/11/2025]
Abstract
2D noble transition metal dichalcogenides (nTMDCs, PdX2 and PtX2, where X═S, Se, Te) have emerged as a new class of 2D materials, owing to their unique puckered pentagonal structure in 2D PdS2 and PdSe2, largely tunable band structures or band gaps with decreasing the layer thickness at the 2D limit, strong interlayer interactions, superior optoelectronic properties, high edge catalytic properties, etc. Directly synthesizing 2D nTMDCs domains or thin films with large-area uniformity, tunable thickness, and high crystalline quality is the premise for exploring these salient properties and developing a wide range of applications. Hereby, this review summarizes recent progress in the direct syntheses and characterizations of 2D nTMDCs, mainly focusing on the thermally assisted conversion (TAC) and chemical vapor deposition (CVD) methods, by using various metal and chalcogen-contained precursors. Meanwhile, the applications of directly synthesized 2D nTMDCs in various fields, such as high-performance field effect transistors (FETs), broadband photodetectors, superior catalysts in hydrogen evolution reactions, and ultra-sensitive piezo resistance sensors, are also discussed. Finally, challenges and prospects regarding the direct syntheses of high-quality 2D nTMDCs and their applications in next-generation electronic and optoelectronic devices, as well as novel catalysts beyond noble metals are overviewed.
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Affiliation(s)
- Jialong Wang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - You Peng
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Tong Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Jiatian Fu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Wenzhi Quan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yujin Cheng
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Haoxuan Ding
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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3
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Xu X, Wang X, Yu S, Wang C, Liu G, Li H, Yang J, Li J, Sun T, Hai X, Li L, Liu X, Zhang Y, Zhang W, Zhang Q, Wang K, Xu N, Ma Y, Ming F, Cui P, Lu J, Zhang Z, Xiao X. Two-Dimensional Topological Platinum Telluride Superstructures with Periodic Tellurium Vacancies for Efficient and Robust Catalysis. ACS NANO 2024; 18:32635-32649. [PMID: 39530547 DOI: 10.1021/acsnano.4c10085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
Defect engineering in the inherently inert basal planes of transition metal dichalcogenides (TMDs), involving the introduction of chalcogen vacancies, represents a pivotal approach to enhance catalytic activity by exposing high-density catalytic metal single-atom sites. However, achieving a single-atom limit spacing between chalcogen vacancies to form ordered superstructures remains challenging for creating uniformly distributed high-density metal single-atom sites on TMDs comparable to carbon-supported single-atom catalysts (SACs). Here we unveil an efficient TMD-based topological catalyst for hydrogen evolution reaction (HER), featuring high-density single-atom reactive centers on a few-layer (7 × 7)-PtTe2-x superstructure. Compared with pristine Pt(111), PtTe2, and (2 × 2)-PtTe2-x, (7 × 7)-PtTe2-x exhibits superior HER performance owing to its substantially increased density of undercoordinated Pt sites, alongside exceptional catalytic stability when operating at high current densities. First-principles calculations confirm that multiple types of undercoordinated Pt sites on (7 × 7)-PtTe2-x exhibit favorable hydrogen adsorption Gibbs free energies, and remain active upon increasing hydrogen coverage. Furthermore, (7 × 7)-PtTe2-x possesses nontrivial band topologies with robust edge states, suggesting potential enhancements for HER. Our findings are expected to advance TMD-based catalysts and exploration of topological materials in catalysis.
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Affiliation(s)
- Xin Xu
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology and School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, P. R. China
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
- School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
| | - Xuechun Wang
- International Center for Quantum Design of Functional Materials (ICQD) and Hefei National Laboratory, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Shuming Yu
- Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Chenhui Wang
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
- School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
| | - Guowei Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Hao Li
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
| | - Jiangang Yang
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
| | - Jing Li
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, P. R. China
| | - Tao Sun
- School of Chemical Engineering, Xi'an Key Laboratory of Special Energy Materials, Northwest University, Xi'an 710069, P. R. China
| | - Xiao Hai
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Lei Li
- Core Facility of Wuhan University, Wuhan 430072, P. R. China
| | - Xue Liu
- Center of Free Electron Laser & High Magnetic Field, Anhui University, Hefei 230601, P. R. China
| | - Ying Zhang
- Core Facility of Wuhan University, Wuhan 430072, P. R. China
| | - Weifeng Zhang
- School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, P. R. China
| | - Quan Zhang
- College of Chemistry and Chemical Engineering, Hubei Normal University, Huangshi 435002, P. R. China
| | - Kedong Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Nan Xu
- Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yaping Ma
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
- School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, P. R. China
| | - Fangfei Ming
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology and School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, P. R. China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD) and Hefei National Laboratory, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD) and Hefei National Laboratory, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xudong Xiao
- School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
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4
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Wang IT, Chou TL, Hsu CE, Lei Z, Wang LM, Lin PH, Luo CW, Chen CW, Kuo CN, Lue CS, Chen CH, Hsueh HC, Chu MW. The growing charge-density-wave order in CuTe lightens and speeds up electrons. Nat Commun 2024; 15:9345. [PMID: 39472563 PMCID: PMC11522371 DOI: 10.1038/s41467-024-53653-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 10/16/2024] [Indexed: 11/02/2024] Open
Abstract
Charge density waves (CDWs) are pervasive orders in solids that usually enhance the effective mass (m*) and reduce the Fermi velocity (v F ) of carriers. Here, we report on the inverse - a reduced m* and an enhancedv F correlated with the growth of the CDW order in CuTe with gapped, practically linearly dispersing bands - reminiscent of emergent CDW-gapped topological semimetals. Using momentum-dependent electron energy-loss spectroscopy (q-EELS), we simultaneously capture m* andv F of the CDW-related, practically linearly dispersing electrons by plasmon dispersions across the transition (335 K, TCDW), with m* of 0.28 m0 (m0, the electron rest mass) andv F of ~ 0.005c (c, the speed of light) at 300 K. With the growth of the CDW order-parameter strength toward 100 K, the electrons become lighter and move faster by ~ 20%. Thorough inspection below TCDW unveils the essential role of the increasing opening of the CDW gap. CuTe is a rich platform for the exploration of CDW/correlation physics with q-EELS established as a useful probe for this type of physics.
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Grants
- This work was supported by National Science and Technology Council (Grant No. 113-2119-M-002-025-MBK M.W.C., 112-2119-M-002-022-MBK M.W.C., 111-2119-M-002-013-MBK M.W.C., 110-2119-M-002-010-MBK M.W.C., 109-2628-M-002-004-MY3 M.W.C., 110-2112-M-032-014-MY3 H.C.H., 113-2112-M-032-013 H.C.H., 112-2124-M-006-009 C.S.L., 113-2124-M-006-011 C.S.L.), National Taiwan University, Academia Sinica (Grant No. AS-iMATE-113-12 M.W.C., AS-iMATE-113-15 M.W.C.), Ministry of Education, National Center for High-Performance Computing (NCHC), and the International Collaborative Research Program of Institute for Chemical Research at Kyoto University (Grant No. 2021-123 M.W.C., 2022-126 M.W.C., 2023-141 M.W.C., 2024-131 M.W.C.). The authors acknowledge Ms. H. H. Chang and Prof. C. H. Cheng at Joint Center for Instruments and Researches (College of Bio-Resources and Agriculture, National Taiwan University) for ultramicrotome sample preparations.
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Affiliation(s)
- I-Ta Wang
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University (NTU-MST), Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program (TIGP), Academia Sinica, Taipei, 11529, Taiwan
| | - Ta-Lei Chou
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 10617, Taiwan
| | - Chih-En Hsu
- Department of Physics, Tamkang University, New Taipei, 251301, Taiwan
| | - Zhujialei Lei
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Li-Min Wang
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Ping-Hui Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Chih-Wei Luo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chun-Wei Chen
- International Graduate Program of Molecular Science and Technology, National Taiwan University (NTU-MST), Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program (TIGP), Academia Sinica, Taipei, 11529, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Chin Shan Lue
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10601, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Cheng-Hsuan Chen
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan
| | - Hung-Chung Hsueh
- Department of Physics, Tamkang University, New Taipei, 251301, Taiwan.
| | - Ming-Wen Chu
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan.
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 10617, Taiwan.
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5
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Macis S, D'Arco A, Mosesso L, Paolozzi MC, Tofani S, Tomarchio L, Tummala PP, Ghomi S, Stopponi V, Bonaventura E, Massetti C, Codegoni D, Serafini A, Targa P, Zacchigna M, Lamperti A, Martella C, Molle A, Lupi S. Terahertz and Infrared Plasmon Polaritons in PtTe 2 Type-II Dirac Topological Semimetal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400554. [PMID: 38733453 DOI: 10.1002/adma.202400554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 04/18/2024] [Indexed: 05/13/2024]
Abstract
Surface plasmon polaritons (SPPs) are electromagnetic excitations existing at the interface between a metal and a dielectric. SPPs provide a promising path in nanophotonic devices for light manipulation at the micro and nanoscale with applications in optoelectronics, biomedicine, and energy harvesting. Recently, SPPs are extended to unconventional materials like graphene, transparent oxides, superconductors, and topological systems characterized by linearly dispersive electronic bands. In this respect, 3D Dirac and Weyl semimetals offer a promising frontier for infrared (IR) and terahertz (THz) radiation tuning by topologically-protected SPPs. In this work, the THz-IR optical response of platinum ditelluride (PtTe2) type-II Dirac topological semimetal films grown on Si substrates is investigated. SPPs generated on microscale ribbon arrays of PtTe2 are detected in the far-field limit, finding an excellent agreement among measurements, theoretical models, and electromagnetic simulation data. The far-field measurements are further supported by near-field IR data which indicate a strong electric field enhancement due to the SPP excitation near the ribbon edges. The present findings indicate that the PtTe2 ribbon array appears an ideal active layout for geometrically tunable SPPs thus inspiring a new fashion of optically tunable materials in the technologically demanding THz and IR spectrum.
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Affiliation(s)
- Salvatore Macis
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Rome, 00185, Italy
| | - Annalisa D'Arco
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Rome, 00185, Italy
| | - Lorenzo Mosesso
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Rome, 00185, Italy
| | - Maria Chiara Paolozzi
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Rome, 00185, Italy
| | - Silvia Tofani
- CNR-IMM, Unit of Rome, Via del Fosso del Cavaliere 100, Rome, 00133, Italy
| | - Luca Tomarchio
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Rome, 00185, Italy
| | | | - Sara Ghomi
- CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB), I-20864, Italy
| | - Veronica Stopponi
- CNR-IOM, Area Science Park Strada Statale 14, km 163,5, Basovizza, TS, 34149, Italy
| | - Eleonora Bonaventura
- CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB), I-20864, Italy
- Department of Materials Science, University of Milano-Bicocca, Via Cozzi, 55, Milan, 20125, Italy
| | - Chiara Massetti
- CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB), I-20864, Italy
| | - Davide Codegoni
- STMicroelectronics, via C. Olivetti 2, Agrate Brianza (MB), I-20864, Italy
| | - Andrea Serafini
- STMicroelectronics, via C. Olivetti 2, Agrate Brianza (MB), I-20864, Italy
| | - Paolo Targa
- STMicroelectronics, via C. Olivetti 2, Agrate Brianza (MB), I-20864, Italy
| | - Michele Zacchigna
- CNR-IOM, Area Science Park Strada Statale 14, km 163,5, Basovizza, TS, 34149, Italy
| | | | | | | | - Stefano Lupi
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Rome, 00185, Italy
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6
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Rossi AW, Bourgeois MR, Walton C, Masiello DJ. Probing the Polarization of Low-Energy Excitations in 2D Materials from Atomic Crystals to Nanophotonic Arrays Using Momentum-Resolved Electron Energy Loss Spectroscopy. NANO LETTERS 2024; 24:7748-7756. [PMID: 38874581 DOI: 10.1021/acs.nanolett.4c01797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Spectroscopies utilizing free electron beams as probes offer detailed information on the reciprocal-space excitations of 2D materials such as graphene and transition metal dichalcogenide monolayers. Yet, despite the attention paid to such quantum materials, less consideration has been given to the electron-beam characterization of 2D periodic nanostructures such as photonic crystals, metasurfaces, and plasmon arrays, which can exhibit the same lattice and excitation symmetries as their atomic analogues albeit at drastically different length, momentum, and energy scales. Because of their lack of covalent bonding and influence of retarded electromagnetic interactions, important physical distinctions arise that complicate interpretation of scattering signals. Here we present a fully-retarded theoretical framework for describing the inelastic scattering of wide-field electron beams from 2D materials and apply it to investigate the complementarity in sample excitation information gained in the measurement of a honeycomb plasmon array versus angle-resolved optical spectroscopy in comparison to single monolayer graphene.
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Affiliation(s)
- Andrew W Rossi
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - Marc R Bourgeois
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - Caleb Walton
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - David J Masiello
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
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7
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Gao H, Qu N, Zhang X, Ding C, Wang M, Wang J, Yang B, Zhao M. Hyperbolic response and low-frequency ultra-flat plasmons in inhomogeneous charge-distributed transition-metal monohalides. OPTICS EXPRESS 2024; 32:22525-22536. [PMID: 39538735 DOI: 10.1364/oe.524893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Accepted: 05/17/2024] [Indexed: 11/16/2024]
Abstract
Plasmon, the collective oscillations of free electron gas in materials, determines the long-wavelength excitation spectrum and optical response, are pivotal in the realm of nanophotonics and optoelectronics. In this study, using the first-principles calculations, we systematically investigated the dielectric response and plasmon properties of bulk transition-metal monohalides MXs (M = Zr, Mo; X = Cl, F). Due to the strong electronic anisotropy, MXs exhibit a broadband type-II hyperbolic response and direction-dependent plasmon modes. Particularly, local field effect (LFE) driven by the charge distribution inhomogeneity, significantly modifies the optical response and excitation spectra in MX along the out-of-plane direction. Taking into account LFE, the energy dissipation along the out-of-plane direction is almost completely suppressed, and an ultra-flat and long-lived plasmon mode with a slow group velocity is introduced. This finding reveals the role of charge density in modifying the optical response and excitation behavior, shedding light on potential applications in plasmonics.
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8
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Wu Y, Nie C, Sun F, Jiang X, Zhang X, Fu J, Peng Y, Wei X. Uncooled Broadband Photodetection via Light Trapping in Conformal PtTe 2-Silicon Nanopillar Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22632-22640. [PMID: 38642041 DOI: 10.1021/acsami.4c00827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/22/2024]
Abstract
Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due to their unique bandgap structure and high carrier mobility. Combining them with classical semiconductor materials to form heterojunctions enables broadband optoelectronic conversion at room temperature. However, the low light absorption of layered Dirac semimetals substantially limits the device's responsivity in the infrared band. Herein, a three-dimensional (3D) heterostructure, composed of silicon nanopillars (SiNPs) and a conformal PtTe2 film, is proposed and demonstrated to enhance the photoresponsivity for uncooled broadband detection. The light trapping effect in the 3D heterostructure efficiently promotes the interaction between light and PtTe2, while also enhancing the light absorption efficiency of silicon, which enables the enhancement of the device responsivity across a broadband spectrum. Experimentally, the PtTe2-SiNPs heterojunction device demonstrates excellent photoelectric conversion behavior across the visible, near-infrared, and long-wave infrared (LWIR) bands, with its responsivity demonstrating an order-of-magnitude improvement compared to the counterparts with planar silicon heterojunctions. Under 11 μm laser irradiation, the noise equivalent power (NEP) can reach 1.76 nW·Hz-1/2 (@1 kHz). These findings offer a strategic approach to the design and fabrication of high-performance broadband photodetectors based on Dirac semimetals.
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Affiliation(s)
- Yuequan Wu
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Changbin Nie
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feiying Sun
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Xilong Jiang
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Xianning Zhang
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Jintao Fu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yang Peng
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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9
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Chen Z, Qiu H, Cheng X, Cui J, Jin Z, Tian D, Zhang X, Xu K, Liu R, Niu W, Zhou L, Qiu T, Chen Y, Zhang C, Xi X, Song F, Yu R, Zhai X, Jin B, Zhang R, Wang X. Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe 2 thin films. Nat Commun 2024; 15:2605. [PMID: 38521797 PMCID: PMC10960839 DOI: 10.1038/s41467-024-46821-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 03/12/2024] [Indexed: 03/25/2024] Open
Abstract
Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.
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Affiliation(s)
- Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Hongsong Qiu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xinjuan Cheng
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, University of Shanghai for Science and Technology, 200093, Shanghai, China
| | - Da Tian
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Kankan Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China
| | - Tianyu Qiu
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Caihong Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xiaoxiang Xi
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Fengqi Song
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xuechao Zhai
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China.
| | - Biaobing Jin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
- Purple Mountain Laboratories, 211111, Nanjing, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
- Department of Physics, Xiamen University, 361005, Xiamen, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
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10
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Yadav P, Xinhou C, Bhatt S, Das S, Yang H, Mishra R. Highly Efficient Spintronic Terahertz Emitter Utilizing a Large Spin Hall Conductivity of Type-II Dirac Semimetal PtTe 2. NANO LETTERS 2024; 24:2376-2383. [PMID: 38329912 DOI: 10.1021/acs.nanolett.3c04986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
The remarkable spin-charge interconversion ability of transition metal dichalcogenides (TMDs) makes them promising candidates for spintronic applications. Nevertheless, their potential as spintronic terahertz (THz) emitters (STEs) remains constrained mainly due to their sizable resistivity and low spin Hall conductivity (SHC), which consequently result in modest THz emission. In this work, the TMD PtTe2, a type-II Dirac semimetal is effectively utilized to develop efficient STEs. This high efficiency primarily results from the large SHC of PtTe2, stemming from its low resistivity and significant spin-to-charge conversion efficiency, attributed to surface states and the local Rashba effect in addition to the inverse spin Hall effect. Remarkably, the peak THz emission from PtTe2/Co-STE exceeds that of Pt/Co-STE by ∼15% and is nearly double that of a similarly thick Pt/Co-STE. The efficient THz emission in the PtTe2/Co heterostructure opens new possibilities for utilizing the semimetal TMDs for developing THz emitters.
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Affiliation(s)
- Pinki Yadav
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| | - Chen Xinhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
| | - Shubham Bhatt
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| | - Samaresh Das
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
| | - Rahul Mishra
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
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11
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Hsueh JW, Kuo LH, Chen PH, Chen WH, Chuang CY, Kuo CN, Lue CS, Lai YL, Liu BH, Wang CH, Hsu YJ, Lin CL, Chou JP, Luo MF. Investigating the role of undercoordinated Pt sites at the surface of layered PtTe 2 for methanol decomposition. Nat Commun 2024; 15:653. [PMID: 38253575 PMCID: PMC10803346 DOI: 10.1038/s41467-024-44840-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 01/08/2024] [Indexed: 01/24/2024] Open
Abstract
Transition metal dichalcogenides, by virtue of their two-dimensional structures, could provide the largest active surface for reactions with minimal materials consumed, which has long been pursued in the design of ideal catalysts. Nevertheless, their structurally perfect basal planes are typically inert; their surface defects, such as under-coordinated atoms at the surfaces or edges, can instead serve as catalytically active centers. Here we show a reaction probability > 90 % for adsorbed methanol (CH3OH) on under-coordinated Pt sites at surface Te vacancies, produced with Ar+ bombardment, on layered PtTe2 - approximately 60 % of the methanol decompose to surface intermediates CHxO (x = 2, 3) and 35 % to CHx (x = 1, 2), and an ultimate production of gaseous molecular hydrogen, methane, water and formaldehyde. The characteristic reactivity is attributed to both the triangular positioning and varied degrees of oxidation of the under-coordinated Pt at Te vacancies.
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Affiliation(s)
- Jing-Wen Hsueh
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan City, 320317, Taiwan
| | - Lai-Hsiang Kuo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan City, 320317, Taiwan
| | - Po-Han Chen
- Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2 Kuang-Fu Road, Hsinchu, 300044, Taiwan
| | - Wan-Hsin Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu, 300039, Taiwan
| | - Chi-Yao Chuang
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu, 300039, Taiwan
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan, 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10601, Taiwan
| | - Chin-Shan Lue
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan, 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10601, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, 701, Taiwan
| | - Yu-Ling Lai
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Bo-Hong Liu
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Chia-Hsin Wang
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Yao-Jane Hsu
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu, 300039, Taiwan.
| | - Jyh-Pin Chou
- Department of Physics, National Changhua University of Education, No. 1, Jin-De Rd., Changhua, 50007, Taiwan.
| | - Meng-Fan Luo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan City, 320317, Taiwan.
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12
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Chen WH, Kawakami N, Hsueh JW, Kuo LH, Chen JY, Liao TW, Kuo CN, Lue CS, Lai YL, Hsu YJ, Lien DH, Hu C, Chou JP, Luo MF, Lin CL. Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16153-16161. [PMID: 36802501 DOI: 10.1021/acsami.2c21150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.
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Affiliation(s)
- Wan-Hsin Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Naoya Kawakami
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Jing-Wen Hsueh
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Lai-Hsiang Kuo
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Jiun-Yu Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Ting-Wei Liao
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 106, Taiwan
| | - Chin-Shan Lue
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 106, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 701, Taiwan
| | - Yu-Ling Lai
- Nanoscience Group, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Yao-Jane Hsu
- Nanoscience Group, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Der-Hsien Lien
- Institute of Electronic Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Chenming Hu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Jyh-Pin Chou
- Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
| | - Meng-Fan Luo
- Department of Physics, National Central University, Jhongli 320, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
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13
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Shao D, Deng J, Sheng H, Zhang R, Weng H, Fang Z, Chen XQ, Sun Y, Wang Z. Large Spin Hall Conductivity and Excellent Hydrogen Evolution Reaction Activity in Unconventional PtTe 1.75 Monolayer. RESEARCH (WASHINGTON, D.C.) 2023; 6:0042. [PMID: 36930816 PMCID: PMC10013811 DOI: 10.34133/research.0042] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2022] [Accepted: 12/16/2022] [Indexed: 01/12/2023]
Abstract
Two-dimensional (2D) materials have gained lots of attention due to the potential applications. In this work, we propose that based on first-principles calculations, the (2 × 2) patterned PtTe2 monolayer with kagome lattice formed by the well-ordered Te vacancy (PtTe1.75) hosts large and tunable spin Hall conductivity (SHC) and excellent hydrogen evolution reaction (HER) activity. The unconventional nature relies on the A1 @ 1b band representation of the highest valence band without spin-orbit coupling (SOC). The large SHC comes from the Rashba SOC in the noncentrosymmetric structure induced by the Te vacancy. Even though it has a metallic SOC band structure, the ℤ2 invariant is well defined because of the existence of the direct bandgap and is computed to be nontrivial. The calculated SHC is as large as 1.25 × 103 ℏ e (Ω cm)-1 at the Fermi level (EF ). By tuning the chemical potential from EF - 0.3 to EF + 0.3 eV, it varies rapidly and monotonically from -1.2 × 103 to 3.1 × 1 0 3 ℏ e Ω cm - 1 . In addition, we also find that the Te vacancy in the patterned monolayer can induce excellent HER activity. Our results not only offer a new idea to search 2D materials with large SHC, i.e., by introducing inversion-symmetry breaking vacancies in large SOC systems, but also provide a feasible system with tunable SHC (by applying gate voltage) and excellent HER activity.
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Affiliation(s)
- Dexi Shao
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,Department of Physics, Hangzhou Normal University, Hangzhou 311121, China
| | - Junze Deng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haohao Sheng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ruihan Zhang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongming Weng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhong Fang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, Liaoning, China.,School of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Yan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, Liaoning, China.,School of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Zhijun Wang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
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14
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Liu S, Wang J, Shao J, Ouyang D, Zhang W, Liu S, Li Y, Zhai T. Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200734. [PMID: 35501143 DOI: 10.1002/adma.202200734] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.
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Affiliation(s)
- Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jing Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jiefan Shao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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15
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Lam NH, Nguyen PL, Choi BK, Ly TT, Duvjir G, Rhee TG, Jo YJ, Kim TH, Jozwiak C, Bostwick A, Rotenberg E, Hwang Y, Chang YJ, Lee J, Kim J. Controlling Spin-Orbit Coupling to Tailor Type-II Dirac Bands. ACS NANO 2022; 16:11227-11233. [PMID: 35838605 DOI: 10.1021/acsnano.2c04301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
NiTe2, a type-II Dirac semimetal with a strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density functional theory calculations, we report that the strength of the spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac Fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.
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Affiliation(s)
- Nguyen Huu Lam
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Phuong Lien Nguyen
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Byoung Ki Choi
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| | - Trinh Thi Ly
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Ganbat Duvjir
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Tae Gyu Rhee
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Republic of Korea
| | - Yong Jin Jo
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Tae Heon Kim
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Chris Jozwiak
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Younghun Hwang
- Electricity and Electronics and Semiconductor Applications, Ulsan College, Ulsan 44610, Republic of Korea
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Republic of Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Jungdae Kim
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
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16
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Li YZ, Zhao LL, Zhao XM, Dai TA, Zhong JX, Meng LJ. Magnetic field effect on topological properties of Dirac semimetals PdTe 2/PtTe 2/PtSe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:085802. [PMID: 34794129 DOI: 10.1088/1361-648x/ac3b28] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Accepted: 11/18/2021] [Indexed: 06/13/2023]
Abstract
We investigated magnetic field effect on the topological properties of transition metal dichalcogenide Dirac semimetals (DSMs) PdTe2/PtTe2/PtSe2based on Wannier-function-based tight-binding (WFTB) model obtained from first-principles calculations. The DSMs PdTe2/PtTe2/PtSe2undergo a transition from DSMs into Weyl semimetals with four pairs of Weyl points (WPs) in the entire Brillouin zone by splitting Dirac points under external magnetic fieldB. The positions and energies of WPs vary linearly with the strength of theBfield under thec-axis magnetic fieldB. Under thea- andb-axisBfield, however, the positions of magnetic-field-inducing WPs deviate slightly from thecaxis, and theirkzcoordinates and energies change in a parabolic-like curve with the increasingBfield. However, the system opens an axial gap on theA-Γ axis, and the gap changes with the direction of theBfield when the out ofc-axisBfield is applied. When we further apply the magnetic field in theac,bc, andabplanes, the results are more diverse compared to the axial magnetic field. Under theacandbcplaneBfield, thekzand energies of WPs within angleθ= [0°, 90°] andθ= [90°, 180°] are mirror symmetrically distributed. The distribution of WPs shows broken rotational symmetry under theabplaneBfield due to the difference of non-diagonal part of Hamiltonian. Our theoretical findings can provide a useful guideline for the applications of DSM materials under external magnetic field in the future topological electronic devices.
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Affiliation(s)
- Y Z Li
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - L L Zhao
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - X M Zhao
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - T A Dai
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - J X Zhong
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Hunan, People's Republic of China
| | - L J Meng
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Hunan, People's Republic of China
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17
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Politano A. On the fate of high-resolution electron energy loss spectroscopy (HREELS), a versatile probe to detect surface excitations: will the Phoenix rise again? Phys Chem Chem Phys 2021; 23:26061-26069. [PMID: 34812442 DOI: 10.1039/d1cp03804d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
From its advent, high-resolution electron energy loss spectroscopy (HREELS) has emerged as one of the most versatile tools in surface science. In the last few decades, HREELS was widely used for the fundamental study of (i) chemical reactions at the surfaces of model catalysts (mostly single crystals), (ii) lattice dynamics (phonons), (iii) surface plasmons and (iv) magnons. However, HREELS has experienced a continuous decay of the number of daily users worldwide so far, due to several factors. However, the rise of Dirac materials (graphene, topological insulators, Dirac semimetals) offers new perspectives for HREELS, due to its unique features enabling ultrasensitive detection of (i) chemical modifications at their surfaces, (ii) Kohn anomalies arising from electron-phonon coupling and (iii) novel plasmonic excitations associated to Dirac-cone fermions, as well as their eventual mutual interplay with other plasmon resonances related to topologically trivial electronic states. By selected case-study examples, here we show that HREELS can uniquely probe these phenomena in Dirac materials, thus validating its outstanding relevance and its irreplaceability in contemporary solid-state physics, thus paving the way for a renewed interest. In addition, recent technological upgrades enable the combination of HREELS as an add-on to photoemission apparatuses for parallel readout of energy and momentum of surface excitations. Open issues for theoretical modelling of HREELS related to the dependence on primary electron beam energy and scattering geometry are also critically presented.
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Affiliation(s)
- Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, 67100 L'Aquila, Abruzzo, Italy. .,CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
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18
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Xue S, Wang M, Li Y, Zhang S, Jia X, Zhou J, Shi Y, Zhu X, Yao Y, Guo J. Observation of Nodal-Line Plasmons in ZrSiS. PHYSICAL REVIEW LETTERS 2021; 127:186802. [PMID: 34767385 DOI: 10.1103/physrevlett.127.186802] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Accepted: 09/27/2021] [Indexed: 06/13/2023]
Abstract
Nodal-line semimetals (NLSMs), a large family of new topological phases of matter with continuous linear band crossing points in the momentum space, attract considerable attention. Here, we report the direct observation of plasmons originating from topological nodal-line states in a prototypical NLSM ZrSiS by high-resolution electron energy loss spectroscopy. There exist three temperature-independent plasmons with energies ranging from the near- to the mid-infrared frequencies. With first-principles calculations of a slab model, these plasmons can be ascribed to the correlations of electrons in the bulk nodal lines and their projected surface states, dubbed nodal-line plasmons. An anomalous surface plasmon has higher excitation energy than the bulk plasmon due to the larger contribution from the nodal-line projected surface states. This work reveals the novel plasmons related to the unique nodal-line states in a NLSM.
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Affiliation(s)
- Siwei Xue
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Maoyuan Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yong Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuyuan Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xun Jia
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianhui Zhou
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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19
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Fujii J, Ghosh B, Vobornik I, Bari Sarkar A, Mondal D, Kuo CN, Bocquet F, Zhang L, Boukhvalov DW, Lue CS, Agarwal A, Politano A. Mitrofanovite Pt 3Te 4: A Topological Metal with Termination-Dependent Surface Band Structure and Strong Spin Polarization. ACS NANO 2021; 15:14786-14793. [PMID: 34472336 PMCID: PMC8482756 DOI: 10.1021/acsnano.1c04766] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/03/2021] [Accepted: 08/10/2021] [Indexed: 06/13/2023]
Abstract
Due to their peculiar quasiparticle excitations, topological metals have high potential for applications in the fields of spintronics, catalysis, and superconductivity. Here, by combining spin- and angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory, we discover surface-termination-dependent topological electronic states in the recently discovered mitrofanovite Pt3Te4. Mitrofanovite crystal is formed by alternating, van der Waals bound layers of Pt2Te2 and PtTe2. Our results demonstrate that mitrofanovite is a topological metal with termination-dependent (i) electronic band structure and (ii) spin texture. Despite their distinct electronic character, both surface terminations are characterized by electronic states exhibiting strong spin polarization with a node at the Γ point and sign reversal across the Γ point, indicating their topological nature and the possibility of realizing two distinct electronic configurations (both of them with topological features) on the surface of the same material.
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Affiliation(s)
- Jun Fujii
- CNR-IOM,
TASC Laboratory, Area Science Park-Basovizza, 34139 Trieste, Italy
| | - Barun Ghosh
- Department
of Physics, Indian Institute of Technology
Kanpur, Kanpur 208016, India
| | - Ivana Vobornik
- CNR-IOM,
TASC Laboratory, Area Science Park-Basovizza, 34139 Trieste, Italy
| | - Anan Bari Sarkar
- Department
of Physics, Indian Institute of Technology
Kanpur, Kanpur 208016, India
| | - Debashis Mondal
- CNR-IOM,
TASC Laboratory, Area Science Park-Basovizza, 34139 Trieste, Italy
| | - Chia-Nung Kuo
- Department
of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, 70101 Tainan, Taiwan
- Taiwan
Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
| | - François
C. Bocquet
- Peter
Grünberg Institut (PGI-3), Forschungszentrum
Jülich, 52425 Jülich, Germany
- Jülich
Aachen Research Alliance (JARA), Fundamentals
of Future Information Technology, 52425 Jülich, Germany
| | - Lixue Zhang
- College
of
Chemistry and Chemical Engineering, Qingdao
University, Qingdao 266071, Shandong, P.
R. China
| | - Danil W. Boukhvalov
- College of
Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, P. R. China
- Institute
of Physics and Technology, Ural Federal
University, Mira Street
19, 620002 Ekaterinburg, Russia
| | - Chin Shan Lue
- Department
of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, 70101 Tainan, Taiwan
- Taiwan
Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
| | - Amit Agarwal
- Department
of Physics, Indian Institute of Technology
Kanpur, Kanpur 208016, India
| | - Antonio Politano
- INSTM and
Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, 67100 L’Aquila
(AQ), Italy
- CNR-IMM
Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
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20
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Suo P, Zhang H, Yan S, Zhang W, Fu J, Lin X, Hao S, Jin Z, Zhang Y, Zhang C, Miao F, Liang SJ, Ma G. Observation of Negative Terahertz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe_{2}. PHYSICAL REVIEW LETTERS 2021; 126:227402. [PMID: 34152189 DOI: 10.1103/physrevlett.126.227402] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Revised: 02/04/2021] [Accepted: 04/21/2021] [Indexed: 06/13/2023]
Abstract
As a newly emergent type-II Dirac semimetal, platinum telluride (PtTe_{2}) stands out from other two dimensional noble-transition-metal dichalcogenides for the unique band structure and novel physical properties, and has been studied extensively. However, the ultrafast response of low energy quasiparticle excitation in terahertz frequency remains nearly unexplored yet. Herein, we employ optical pump-terahertz probe (OPTP) spectroscopy to systematically study the photocarrier dynamics of PtTe_{2} thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the terahertz photoconductivity (PC) of PtTe_{2} films shows abrupt increase initially, while the terahertz PC changes into negative value in a subpicosecond timescale, followed by a prolonged recovery process that lasted a few nanoseconds. The magnitude of both positive and negative terahertz PC response shows strongly pump fluence dependence. We assign the unusual negative terahertz PC to the formation of small polaron due to the strong electron-phonon (e-ph) coupling, which is further substantiated by temperature and film thickness dependent measurements. Moreover, our investigations give a subpicosecond timescale of simultaneous carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is of crucial importance for designing PtTe_{2}-based optoelectronic devices.
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Affiliation(s)
- Peng Suo
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Huiyun Zhang
- College of Electronics and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Shengnan Yan
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wenjie Zhang
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Jibo Fu
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Xian Lin
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Song Hao
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, 516 JunGong Road, Shanghai 200093, China
- STU & SIOM Joint Laboratory for Superintense Lasers and the Applications, Shanghai 201210, China
| | - Yuping Zhang
- College of Electronics and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Chao Zhang
- School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia
| | - Feng Miao
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shi-Jun Liang
- Institute of Brain-inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Guohong Ma
- Department of Physics, Shanghai University, Shanghai 200444, China
- STU & SIOM Joint Laboratory for Superintense Lasers and the Applications, Shanghai 201210, China
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21
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High-frequency rectifiers based on type-II Dirac fermions. Nat Commun 2021; 12:1584. [PMID: 33707448 PMCID: PMC7952558 DOI: 10.1038/s41467-021-21906-w] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Accepted: 02/18/2021] [Indexed: 11/21/2022] Open
Abstract
The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging. High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe2-based device allowing for efficient THz detection.
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22
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Hooda MK, Yadav CS, Samal D. Electronic and topological properties of group-10 transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:103001. [PMID: 33570047 DOI: 10.1088/1361-648x/abd0c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The group 10 transition metal dichalcogenides (TMDs) (MX 2: M = Ni, Pd, Pt; X = S, Se, Te) have attracted much attention in the last few decades because of observation of exotic phases and phenomena such as superconductivity (SC), topological surface states (TSSs), type II Dirac fermions, helical spin texture, Rashba effect, 3D Dirac plasmons, metal-insulator transitions, charge density waves (CDW) etc. In this review, we cover the experimental and theoretical progress on the physical phenomena influenced by the strong electron-electron correlation of the group-10 TMDs from the past to the present. We have especially emphasized on the SC and topological phases in the bulk as well as in atomically thin materials.
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Affiliation(s)
- M K Hooda
- Institute of Physics, Bhubaneswar, Bhubaneswar-751005, India
| | - C S Yadav
- School of Basic Sciences, Indian Institute of Technology Mandi, Mandi-175005 (HP), India
| | - D Samal
- Institute of Physics, Bhubaneswar, Bhubaneswar-751005, India
- Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400085, India
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23
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Lian C, Hu SQ, Zhang J, Cheng C, Yuan Z, Gao S, Meng S. Integrated Plasmonics: Broadband Dirac Plasmons in Borophene. PHYSICAL REVIEW LETTERS 2020; 125:116802. [PMID: 32976016 DOI: 10.1103/physrevlett.125.116802] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2019] [Revised: 08/30/2019] [Accepted: 08/12/2020] [Indexed: 06/11/2023]
Abstract
The past decade has witnessed numerous discoveries of two-dimensional (2D) semimetals and insulators, whereas 2D metals were rarely identified. Borophene, a monolayer boron sheet, has recently emerged as a perfect 2D metal with unique electronic properties. Here we study collective excitations in borophene, which exhibit two major plasmon modes with low damping rates extending from the infrared to ultraviolet regime. The anisotropic 1D plasmon originates from electronic transitions of tilted Dirac cones in borophene, analogous to that in extreme doped graphene. These features enable borophene as an integrated platform of 1D, 2D, and Dirac plasmons, promising for directional polariton transport and broadband optical communication in next-generation optoelectronic devices.
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Affiliation(s)
- Chao Lian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shi-Qi Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jin Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Cai Cheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhe Yuan
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Shiwu Gao
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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24
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Mc Manus JB, Horvath DV, Browne MP, Cullen CP, Cunningham G, Hallam T, Zhussupbekov K, Mullarkey D, Coileáin CÓ, Shvets IV, Pumera M, Duesberg GS, McEvoy N. Low-temperature synthesis and electrocatalytic application of large-area PtTe 2 thin films. NANOTECHNOLOGY 2020; 31:375601. [PMID: 32498057 DOI: 10.1088/1361-6528/ab9973] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. Of the reports published, the majority examine mechanically-exfoliated flakes from chemical vapor transport (CVT) grown crystals. This method produces high quality-crystals, ideal for fundamental studies. However, it is very resource intensive and difficult to scale up meaning there are significant obstacles to implementation in large-scale applications. In this report, the synthesis of thin films of PtTe2 through the reaction of solid-phase precursor films is described. This offers a production method for large-area, thickness-controlled PtTe2, potentially suitable for a number of applications. These polycrystalline PtTe2 films were grown at temperatures as low as 450 °C, significantly below the typical temperatures used in the CVT synthesis methods. Adjusting the growth parameters allowed the surface coverage and morphology of the films to be controlled. Analysis with scanning electron- and scanning tunneling microscopy indicated grain sizes of above 1 µm could be achieved, comparing favorably with typical values of ∼50 nm for polycrystalline films. To investigate their potential applicability, these films were examined as electrocatalysts for the hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR). The films showed promising catalytic behavior, however, the PtTe2 was found to undergo chemical transformation to a substoichiometric chalcogenide compound under ORR conditions. This study shows while PtTe2 is stable and highly useful for in HER, this property does not apply to ORR, which undergoes a fundamentally different mechanism. This study broadens our knowledge on the electrocatalysis of TMDs.
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Affiliation(s)
- John B Mc Manus
- School of Chemistry, Trinity College Dublin, Dublin 2 D02 PN40, Ireland. AMBER Centre, CRANN Institute, Trinity College Dublin, Dublin 2 D02 PN40, Ireland
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25
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Shi J, Huan Y, Xiao M, Hong M, Zhao X, Gao Y, Cui F, Yang P, Pennycook SJ, Zhao J, Zhang Y. Two-Dimensional Metallic NiTe 2 with Ultrahigh Environmental Stability, Conductivity, and Electrocatalytic Activity. ACS NANO 2020; 14:9011-9020. [PMID: 32579341 DOI: 10.1021/acsnano.0c03940] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs) supply a versatile platform for investigating newfangled physical issues and developing potential applications in electronics/spintronics/electrocatalysis. Among these, NiTe2 (a type-II Dirac semimetal) possesses a Dirac point near its Fermi level. However, as-prepared 2D MTMDCs are mostly environmentally unstable, and little attention has been paid to synthesizing such materials. Herein, a general chemical vapor deposition (CVD) approach has been designed to prepare thickness-tunable and large-domain (∼1.5 mm) 1T-NiTe2 on an atomically flat mica substrate. Significantly, ultrahigh conductivity (∼1.15 × 106 S m-1) of CVD-synthesized 1T-NiTe2 and high catalytic activity in pH-universal hydrogen evolution reaction have been uncovered. More interestingly, the 2D 1T-NiTe2 maintains robust environmental stability for more than one year and even after a variety of harsh treatments. These results hereby fill an existing research gap in synthesizing environmentally stable 2D MTMDCs, making fundamental progress in developing 2D MTMDC-based devices/catalysts.
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Affiliation(s)
- Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yinlu Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
| | - Fangfang Cui
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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26
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Wadhwa P, Kumar TJD, Shukla A, Kumar R. Signatures of non-trivial band topology in LaAs/LaBi heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:395703. [PMID: 32470966 DOI: 10.1088/1361-648x/ab97e2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2020] [Accepted: 05/29/2020] [Indexed: 06/11/2023]
Abstract
In this article, we investigate non-trivial topological features in a heterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBi using density functional theory. The proposed heterostructure is found to be dynamically stable and shows bulk band inversion with non-trivial Z2topological invariant and a Dirac cone at the surface. In addition, its electron and hole carrier densities ratio is also calculated to investigate the possibility to possess XMR effect. Electrons and holes in the heterostructure are found to be nearly compensated, thereby facilitating it to be a suitable candidate for XMR studies.
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Affiliation(s)
- Payal Wadhwa
- TGraMS Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar-140001, Punjab, India
| | - T J Dhilip Kumar
- Department of Chemistry, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Alok Shukla
- Department of Physics, Indian Institute of Technology Bombay, Powai-400076, Mumbai, India
| | - Rakesh Kumar
- TGraMS Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar-140001, Punjab, India
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27
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MOYNIHAN EOIN, ROST STEFAN, O'CONNELL EOGHAN, RAMASSE QUENTIN, FRIEDRICH CHRISTOPH, BANGERT URSEL. Plasmons in MoS
2
studied via experimental and theoretical correlation of energy loss spectra. J Microsc 2020; 279:256-264. [DOI: 10.1111/jmi.12900] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2019] [Revised: 02/21/2020] [Accepted: 05/08/2020] [Indexed: 11/30/2022]
Affiliation(s)
- EOIN MOYNIHAN
- TEMUL, Department of PhysicsSchool of Sciences & Bernal Institute, University of Limerick Limerick Ireland
| | - STEFAN ROST
- Peter Grünberg Institut and Institute for Advanced Simulation Forschungszentrum Jülich and JARAGermany and RWTH Aachen University Aachen Germany
| | - EOGHAN O'CONNELL
- TEMUL, Department of PhysicsSchool of Sciences & Bernal Institute, University of Limerick Limerick Ireland
| | | | - CHRISTOPH FRIEDRICH
- Peter Grünberg Institut and Institute for Advanced Simulation Forschungszentrum Jülich and JARA Jülich Germany
| | - URSEL BANGERT
- TEMUL, Department of PhysicsSchool of Sciences & Bernal Institute, University of Limerick Limerick Ireland
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28
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Hu X, Wong KP, Zeng L, Guo X, Liu T, Zhang L, Chen Q, Zhang X, Zhu Y, Fung KH, Lau SP. Infrared Nanoimaging of Surface Plasmons in Type-II Dirac Semimetal PtTe 2 Nanoribbons. ACS NANO 2020; 14:6276-6284. [PMID: 32374588 DOI: 10.1021/acsnano.0c02466] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Topological Dirac semimetals made of two-dimensional transition-metal dichalcogenides (TMDCs) have attracted enormous interest for use in electronic and optoelectronic devices because of their electron transport properties. As van der Waals materials with a strong interlayer interaction, these semimetals are expected to support layer-dependent plasmonic polaritons yet to be revealed experimentally. Here, we demonstrate the apparent retardation and attenuation of mid-infrared (MIR) plasmonic waves in type-II Dirac semimetal platinum tellurium (PtTe2) nanoribbons and nanoflakes by near-field nanoimaging. The attenuated dispersion relations for the plasmonic modes in the PtTe2 nanoribbons (15-25 nm thick) extracted from the near-field standing-wave patterns are applied for the fitting of PtTe2 permittivity in the MIR regime, indicating that both free carriers and Dirac fermions are involved in MIR light-matter interaction in PtTe2. The annihilation of plasmonic modes in the ultrathin (<10 nm) PtTe2 is observed and analyzed, which manifests no near-field resonant pattern due to the intrinsic layer-dependent optoelectronic properties of PtTe2. These results could pave a potential wave for MIR photodetection and modulation with TMDC semimetals.
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Affiliation(s)
- Xin Hu
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou 310012, China
- Department of Computing, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Kin Ping Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Xuyun Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Tong Liu
- Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Lei Zhang
- Department of Computing, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Qin Chen
- Institute of Nanophotonics, Jinan University, Guangzhou 511443, China
| | - Xuefeng Zhang
- Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou 310012, China
| | - Ye Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Kin Hung Fung
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong S.A.R., China
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29
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Wang M, Ko TJ, Shawkat MS, Han SS, Okogbue E, Chung HS, Bae TS, Sattar S, Gil J, Noh C, Oh KH, Jung Y, Larsson JA, Jung Y. Wafer-Scale Growth of 2D PtTe 2 with Layer Orientation Tunable High Electrical Conductivity and Superior Hydrophobicity. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10839-10851. [PMID: 32043876 DOI: 10.1021/acsami.9b21838] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Platinum ditelluride (PtTe2) is an emerging semimetallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) crystal with intriguing band structures and unusual topological properties. Despite much devoted efforts, scalable and controllable synthesis of large-area 2D PtTe2 with well-defined layer orientation has not been established, leaving its projected structure-property relationship largely unclarified. Herein, we report a scalable low-temperature growth of 2D PtTe2 layers on an area greater than a few square centimeters by reacting Pt thin films of controlled thickness with vaporized tellurium at 400 °C. We systematically investigated their thickness-dependent 2D layer orientation as well as its correlated electrical conductivity and surface property. We unveil that 2D PtTe2 layers undergo three distinct growth mode transitions, i.e., horizontally aligned holey layers, continuous layer-by-layer lateral growth, and horizontal-to-vertical layer transition. This growth transition is a consequence of competing thermodynamic and kinetic factors dictated by accumulating internal strain, analogous to the transition of Frank-van der Merwe (FM) to Stranski-Krastanov (SK) growth in epitaxial thin-film models. The exclusive role of the strain on dictating 2D layer orientation has been quantitatively verified by the transmission electron microscopy (TEM) strain mapping analysis. These centimeter-scale 2D PtTe2 layers exhibit layer orientation tunable metallic transports yielding the highest value of ∼1.7 × 106 S/m at a certain critical thickness, supported by a combined verification of density functional theory (DFT) and electrical measurements. Moreover, they show intrinsically high hydrophobicity manifested by the water contact angle (WCA) value up to ∼117°, which is the highest among all reported 2D TMDCs of comparable dimensions and geometries. Accordingly, this study confirms the high material quality of these emerging large-area 2D PtTe2 layers, projecting vast opportunities employing their tunable layer morphology and semimetallic properties from investigations of novel quantum phenomena to applications in electrocatalysis.
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Affiliation(s)
- Mengjing Wang
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Tae-Jun Ko
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Mashiyat Sumaiya Shawkat
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Emmanuel Okogbue
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Tae-Sung Bae
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Shahid Sattar
- Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE 97187, Sweden
| | - Jaeyoung Gil
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - Chanwoo Noh
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - Kyu Hwan Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - YounJoon Jung
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - J Andreas Larsson
- Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE 97187, Sweden
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States
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30
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Sadhukhan K, Politano A, Agarwal A. Novel Undamped Gapless Plasmon Mode in a Tilted Type-II Dirac Semimetal. PHYSICAL REVIEW LETTERS 2020; 124:046803. [PMID: 32058735 DOI: 10.1103/physrevlett.124.046803] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Indexed: 06/10/2023]
Abstract
We predict the existence of a novel long-lived gapless plasmon mode in a type-II Dirac semimetal (DSM). This gapless mode arises from the out-of-phase oscillations of the density fluctuations in the electron and the hole pockets of a type-II DSM. It originates beyond a critical wave vector along the direction of the tilt axis, owing to the momentum separation of the electron and hole pockets. A similar out-of-phase plasmon mode arises in other multicomponent charged fluids as well, but generally, it is Landau damped and lies within the particle-hole continuum. In the case of a type-II DSM, the open Fermi surface prohibits low-energy finite momentum single-particle excitations, creating a "gap" in the particle-hole continuum. The gapless plasmon mode lies within this particle-hole continuum gap and, thus, it is protected from Landau damping.
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Affiliation(s)
- Krishanu Sadhukhan
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - Antonio Politano
- Dipartimento di Scienze Fisiche e Chimiche (DSFC), Università dell'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy
- CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
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31
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Wang J, Sui X, Gao S, Duan W, Liu F, Huang B. Anomalous Dirac Plasmons in 1D Topological Electrides. PHYSICAL REVIEW LETTERS 2019; 123:206402. [PMID: 31809077 DOI: 10.1103/physrevlett.123.206402] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2019] [Indexed: 06/10/2023]
Abstract
The plasmon opens up the possibility to efficiently couple light and matter at subwavelength scales. In general, the plasmon frequency, intensity, and damping are dependent on the carrier density. These dependencies, however, are disadvantageous for stable functionalities of plasmons and render fundamentally a weak intensity at low frequency, especially for the Dirac plasmon (DP) widely studied in graphene. Here we demonstrate a new type of DP, emerging from a Dirac nodal-surface state, which can simultaneously exhibit a density-independent frequency, intensity, and damping. Remarkably, we predict the realization of anomalous DP (ADP) in 1D topological electrides, such as Ba_{3}CrN_{3} and Sr_{3}CrN_{3}, by first-principles calculations. The ADPs in both systems have a density-independent frequency and high intensity, and their frequency can be tuned from terahertz to midinfrared by changing the excitation direction. Furthermore, the intrinsic weak electron-phonon coupling of anionic electrons in electrides affords an added advantage of low-phonon-assisted damping and hence a long lifetime of the ADPs. Our Letter paves the way to developing novel plasmonic and optoelectronic devices by combining topological physics with electride materials.
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Affiliation(s)
- Jianfeng Wang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Xuelei Sui
- Beijing Computational Science Research Center, Beijing 100193, China
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Shiwu Gao
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Wenhui Duan
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
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32
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Bonačić Lošić Ž. The coupling effects of surface plasmons and Fermi arc plasmons in Weyl semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:285001. [PMID: 30959499 DOI: 10.1088/1361-648x/ab1734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We study the effects of coupling between surface plasmon and Fermi arc plasmon modes on a planar surface of the Weyl semimetal. A model Hamiltonian is proposed in the second quantization representation for the system of coupled surface plasmon and Fermi arc plasmon modes. We obtain the dispersion relations of coupled modes using the Bogoliubov transformation technique. We identify the upper coupled mode as the renormalized surface plasmon and the lower coupled mode as the renormalized Fermi arc plasmon. It is shown how the magnitude of the coupling depends on both the bare mode dispersions and their dampings. We also demonstrate that coupling increases the surface plasmon mode lifetime. Obtained results for the surface plasmon mode are qualitatively consistent with the recent experimental data of Weyl semimetals.
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33
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Zhang Y, Wang X, Khenata R. Insight into the robust multiple Dirac-cones in perovskite R3¯c phase CuBO 3 semimetal from first-principles. J Mol Graph Model 2019; 91:180-185. [PMID: 31254915 DOI: 10.1016/j.jmgm.2019.06.014] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2019] [Revised: 06/11/2019] [Accepted: 06/18/2019] [Indexed: 10/26/2022]
Abstract
Motivated by a related recent study (Jiao et al. PRL 119, 016403 (2017)), in this work, a new R3¯c type semimetal has been calculated based on the first-principles method. We observed that CuBO3 showed robust multiple Dirac-cones (DCs) near the Fermi level. Also, we found that these DCs were coming from the hybridization between O-p and Cu-d orbits. As a medium state between normal insulating state and topological insulating state, Dirac semimetal is a new class of materials due to its novel physical properties. Moreover, for CuBO3, the Dirac-like band crossings are dispersed in a linear pattern across a very large energy range. In order to guide the experiment, the thermal stability of CuBO3 has been studied through ab initio molecular dynamic simulations. Finally, we are keen to emphasize that the specific space of this group allows for the three-dimensional Dirac point to be used as a symmetric protection for degeneracy. There may be many other three-dimensional Dirac semimetals in the R3¯c phase of crystallization that have not yet been discovered. Thus, more attention to these materials is required in the future.
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Affiliation(s)
- Y Zhang
- Bengbu Institute of Product Quality Supervision and Inspection Research, Bengbu, 233040, China
| | - Xiaotian Wang
- School of Physical Science and Technology, Southwest University, Chongqing, 400715, China.
| | - R Khenata
- Laboratoire de Physique Quantique de La Matière et de Modélisation Mathématique (LPQ3M), Université de Mascara, 29000, Mascara, Algeria
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34
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Zhou B, Ishibashi S, Ishii T, Sekine T, Takehara R, Miyagawa K, Kanoda K, Nishibori E, Kobayashi A. Single-component molecular conductor [Pt(dmdt) 2]-a three-dimensional ambient-pressure molecular Dirac electron system. Chem Commun (Camb) 2019; 55:3327-3330. [PMID: 30741309 DOI: 10.1039/c9cc00218a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
The single-component molecular conductor [Pt(dmdt)2] is a sought-after ambient-pressure molecular Dirac electron system, which exhibits a high temperature-insensitive conductivity and temperature-dependent magnetic susceptibility nearly vanishing below 120 K. First-principles DFT calculations reveal that Dirac cones emerge along the a* direction, and form Dirac nodal lines.
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Affiliation(s)
- Biao Zhou
- Department of Chemistry, College of Humanities and Sciences, Nihon University, Setagaya-Ku, Tokyo 156-8550, Japan.
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35
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Shu GJ, Liou SC, Lin CK, Hayashi M, Chou FC. The dp type π-bond and chiral charge density waves in 1T-TiSe 2. Dalton Trans 2018; 47:16509-16515. [DOI: 10.1039/c8dt03663b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Based on the atomic electronic configuration and Ti–Se coordination, a valence bond model for the layered transition metal dichalcogenide (TMDC) 1T-TiSe2 is proposed.
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Affiliation(s)
- Guo-Jiun Shu
- Center for Condensed Matter Sciences
- National Taiwan University
- Taipei 10617
- Taiwan
- Department of Materials and Mineral Resources Engineering
| | - Sz-Chian Liou
- AIM Lab
- Nano Center
- University of Maryland
- College Park
- USA
| | - Chih-Kai Lin
- Center for Condensed Matter Sciences
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Michitoshi Hayashi
- Center for Condensed Matter Sciences
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Fang-Cheng Chou
- Center for Condensed Matter Sciences
- National Taiwan University
- Taipei 10617
- Taiwan
- Taiwan Consortium of Emergent Crystalline Materials
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