1
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Li S, Wang R, Frauenheim T, He J. Optical-Helicity-Dependent Orbital and Spin Dynamics in Two-Dimensional Ferromagnets. J Phys Chem Lett 2024; 15:5939-5946. [PMID: 38810216 PMCID: PMC11163468 DOI: 10.1021/acs.jpclett.4c01152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 05/24/2024] [Accepted: 05/28/2024] [Indexed: 05/31/2024]
Abstract
Disentangling orbital (OAM) and spin (SAM) angular momenta in the ultrafast spin dynamics of two-dimensional (2D) ferromagnets on subfemtoseconds is a challenge in the field of ultrafast magnetism. Herein, we employed a non-collinear spin version of real-time time-dependent density functional theory to investigate the orbital and spin dynamics of the 2D ferromagnets Fe3GeTe2 (FGT) induced by circularly polarized light. Our results show that the demagnetization of the Fe sublattice in FGT is accompanied by helicity-dependent precession of the OAM and SAM excited by circularly polarized lasers. We further identify that precession of the OAM and SAM in FGT is faster than demagnetization within a few femtoseconds. Remarkably, circularly polarized lasers can significantly induce a periodic transverse linear response of the OAM and SAM on very ultrafast time scales of ∼600 attoseconds. Our finding suggests a powerful new route for attosecond regimes of the angular momentum manipulation to coherently control helicity-dependent orbital and spin dynamics in 2D ferromagnets.
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Affiliation(s)
- Shuo Li
- Institute
for Advanced Study, Chengdu University, Chengdu 610106, China
| | - Ran Wang
- Institute
for Advanced Study, Chengdu University, Chengdu 610106, China
| | - Thomas Frauenheim
- Institute
for Advanced Study, Chengdu University, Chengdu 610106, China
- School
of Science, Constructor University, Bremen 28759, Germany
| | - Junjie He
- Department
of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Prague 12843, Czech Republic
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2
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Wang X, Sun S, Wang J, Li S, Zhou J, Aktas O, Xu M, Deringer VL, Mazzarello R, Ma E, Zhang W. Spin Glass Behavior in Amorphous Cr 2 Ge 2 Te 6 Phase-Change Alloy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302444. [PMID: 37279377 PMCID: PMC10427411 DOI: 10.1002/advs.202302444] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Indexed: 06/08/2023]
Abstract
The layered crystal structure of Cr2 Ge2 Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pulses can trigger amorphization of the material in nanoscale electronic devices, and it is unclear whether the loss of structural ordering leads to a change in magnetic properties. Here, it is demonstrated that Cr2 Ge2 Te6 preserves the spin-polarized nature in the amorphous phase, but undergoes a magnetic transition to a spin glass state below 20 K. Quantum-mechanical computations reveal the microscopic origin of this transition in spin configuration: it is due to strong distortions of the CrTeCr bonds, connecting chromium-centered octahedra, and to the overall increase in disorder upon amorphization. The tunable magnetic properties of Cr2 Ge2 Te6 can be exploited for multifunctional, magnetic phase-change devices that switch between crystalline and amorphous states.
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Affiliation(s)
- Xiaozhe Wang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Suyang Sun
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jiang‐Jing Wang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Shuang Li
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jian Zhou
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Oktay Aktas
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Ming Xu
- Wuhan National Laboratory for OptoelectronicsSchool of Integrated CircuitsHuazhong University of Science and TechnologyWuhan430074China
| | - Volker L. Deringer
- Department of ChemistryInorganic Chemistry LaboratoryUniversity of OxfordOxfordOX1 3QRUK
| | | | - En Ma
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Wei Zhang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
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3
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Xu H, Jia K, Huang Y, Meng F, Zhang Q, Zhang Y, Cheng C, Lan G, Dong J, Wei J, Feng J, He C, Yuan Z, Zhu M, He W, Wan C, Wei H, Wang S, Shao Q, Gu L, Coey M, Shi Y, Zhang G, Han X, Yu G. Electrical detection of spin pumping in van der Waals ferromagnetic Cr 2Ge 2Te 6 with low magnetic damping. Nat Commun 2023; 14:3824. [PMID: 37380642 DOI: 10.1038/s41467-023-39529-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Accepted: 06/15/2023] [Indexed: 06/30/2023] Open
Abstract
The discovery of magnetic order in atomically-thin van der Waals materials has strengthened the alliance between spintronics and two-dimensional materials. An important use of magnetic two-dimensional materials in spintronic devices, which has not yet been demonstrated, would be for coherent spin injection via the spin-pumping effect. Here, we report spin pumping from Cr2Ge2Te6 into Pt or W and detection of the spin current by inverse spin Hall effect. The magnetization dynamics of the hybrid Cr2Ge2Te6/Pt system are measured, and a magnetic damping constant of ~ 4-10 × 10-4 is obtained for thick Cr2Ge2Te6 flakes, a record low for ferromagnetic van der Waals materials. Moreover, a high interface spin transmission efficiency (a spin mixing conductance of 2.4 × 1019/m2) is directly extracted, which is instrumental in delivering spin-related quantities such as spin angular momentum and spin-orbit torque across an interface of the van der Waals system. The low magnetic damping that promotes efficient spin current generation together with high interfacial spin transmission efficiency suggests promising applications for integrating Cr2Ge2Te6 into low-temperature two-dimensional spintronic devices as the source of coherent spin or magnon current.
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Affiliation(s)
- Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Ke Jia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guibin Lan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinwu Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Zhe Yuan
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Mingliang Zhu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Michael Coey
- School of Physics and CRANN, Trinity College, Dublin, 2, Ireland
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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4
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Zhang P, Chung TF, Li Q, Wang S, Wang Q, Huey WLB, Yang S, Goldberger JE, Yao J, Zhang X. All-optical switching of magnetization in atomically thin CrI 3. NATURE MATERIALS 2022; 21:1373-1378. [PMID: 36109674 DOI: 10.1038/s41563-022-01354-7] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2022] [Accepted: 08/04/2022] [Indexed: 06/15/2023]
Abstract
Control of magnetism has attracted interest in achieving low-power and high-speed applications such as magnetic data storage and spintronic devices. Two-dimensional magnets allow for control of magnetic properties using the electric field, electrostatic doping and strain. In two-dimensional atomically thin magnets, a non-volatile all-optical method would offer the distinct advantage of switching magnetic states without application of an external field. Here, we demonstrate such all-optical magnetization switching in the atomically thin ferromagnetic semiconductor, CrI3, triggered by circularly polarized light pulses. The magnetization switching behaviour strongly depends on the exciting photon energy and polarization, in correspondence with excitonic transitions in CrI3, indicating that the switching process is related to spin angular momentum transfer from photoexcited carriers to local magnetic moments. Such an all-optical magnetization switching should allow for further exploration of magneto-optical interactions and open up applications in high-speed and low-power spintronic devices.
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Affiliation(s)
- Peiyao Zhang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Ting-Fung Chung
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Quanwei Li
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Siqi Wang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Qingjun Wang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Warren L B Huey
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, USA
| | - Sui Yang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA
| | - Joshua E Goldberger
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, USA
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xiang Zhang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA.
- Faculty of Science and Faculty of Engineering, The University of Hong Kong, Hong Kong, China.
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5
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Chen X, Shao YT, Chen R, Susarla S, Hogan T, He Y, Zhang H, Wang S, Yao J, Ercius P, Muller DA, Ramesh R, Birgeneau RJ. Pervasive beyond Room-Temperature Ferromagnetism in a Doped van der Waals Magnet. PHYSICAL REVIEW LETTERS 2022; 128:217203. [PMID: 35687434 DOI: 10.1103/physrevlett.128.217203] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2021] [Accepted: 04/28/2022] [Indexed: 06/15/2023]
Abstract
The existence of long-range magnetic order in low-dimensional magnetic systems, such as the quasi-two-dimensional van der Waals (vdW) magnets, has attracted intensive studies of new physical phenomena. The vdW Fe_{N}GeTe_{2} (N=3, 4, 5; FGT) family is exceptional, owing to its vast tunability of magnetic properties. In particular, a ferromagnetic ordering temperature (T_{C}) above room temperature at N=5 (F5GT) is observed. Here, our study shows that, by nickel (Ni) substitution of iron in F5GT, a record high T_{C}=478(6) K is achieved. Importantly, pervasive, beyond room-temperature ferromagnetism exists in almost the entire doping range of the phase diagram of Ni-F5GT. We argue that this striking observation in Ni-F5GT can be possibly due to several contributing factors, including increased 3D magnetic couplings due to the structural alterations.
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Affiliation(s)
- Xiang Chen
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Physics Department, University of California, Berkeley, California 94720, USA
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - Rui Chen
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Tom Hogan
- Quantum Design, Inc., San Diego, California 92121, USA
| | - Yu He
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Physics Department, University of California, Berkeley, California 94720, USA
- Department of Applied Physics, Yale University, New Haven, Connecticut, 06511, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Siqi Wang
- NSF Nanoscale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, California 94720, USA
| | - Jie Yao
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Peter Ercius
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Physics Department, University of California, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Robert J Birgeneau
- Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
- Physics Department, University of California, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
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6
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Zhang C, Wang L, Gu Y, Zhang X, Xia X, Jiang S, Huang LL, Fu Y, Liu C, Lin J, Zou X, Su H, Mei JW, Dai JF. Hard ferromagnetic behavior in atomically thin CrSiTe 3 flakes. NANOSCALE 2022; 14:5851-5858. [PMID: 35357377 DOI: 10.1039/d2nr00331g] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The research on two-dimensional (2D) van der Waals (vdW) magnets has promoted the development of ultrahigh-density data storage and nanoscale spintronic devices. However, the soft ferromagnetic behavior in most 2D magnets, which means the absence of remanent magnetization, severely limits their applications in realistic devices. Here, we report a layer-controlled ferromagnetic behavior in atomically thin CrSiTe3 flakes, where a transition from the soft to the hard ferromagnetic state occurs as the thickness of samples decreases down to several nanometers. Phenomenally, in contrast to the negligible hysteresis loop in the bulk counterparts, atomically thin CrSiTe3 shows a rectangular loop with finite magnetization and coercivity as the thickness decreases down to ∼8 nm, indicative of a single-domain and out-of-plane ferromagnetic order. We find that the stray field is weakened with decreasing thickness, which suppresses the formation of the domain wall. In addition, thickness-dependent ferromagnetic properties also reveal a crossover from 3 dimensional to 2 dimensional Ising ferromagnets, accompanied by a drop of the Curie temperature from 33 K for bulk to ∼17 K for the 4 nm sample. Our study paves the way towards exploring and learning much more about atomically thin and layered intrinsic ferromagnets.
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Affiliation(s)
- Cheng Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Le Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Yue Gu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Xi Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xiuquan Xia
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Liang-Long Huang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Ying Fu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Huimin Su
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Jia-Wei Mei
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
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7
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Zhang C, Gu Y, Wang L, Huang LL, Fu Y, Liu C, Wang S, Su H, Mei JW, Zou X, Dai JF. Pressure-Enhanced Ferromagnetism in Layered CrSiTe 3 Flakes. NANO LETTERS 2021; 21:7946-7952. [PMID: 34533027 DOI: 10.1021/acs.nanolett.1c01994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Despite recent advances in layered ferromagnets, ferromagnetic interactions in these materials are rather weak. Here, we report pressure-enhanced ferromagnetism in layered CrSiTe3 flakes revealed by high-pressure magnetic circular dichroism measurements. Below ∼3 GPa, CrSiTe3 undergoes a paramagnetic-to-ferromagnetic phase transition at ∼32 K, and the field-induced spin-flip in the ferromagnetic phase produces nearly zero hysteresis loops, demonstrating soft ferromagnetism. Above ∼4 GPa, a soft-to-hard ferromagnetic transition occurs, signaled by rectangular-shaped hysteresis loops with finite coercivity and remanent magnetization. Interestingly, as pressure increases, the Curie temperature and coercivity dramatically increase up to ∼138 K and 0.17 T at 7.8 GPa, respectively, in contrast to ∼36 K and 0.02 T at 4.6 GPa. It indicates a remarkable influence of pressure on exchange interactions, which is consistent with DFT calculations. The effective interaction between magnetic couplings and external pressure offers new opportunities in pursuit of high-temperature layered ferromagnets.
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Affiliation(s)
- Cheng Zhang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yue Gu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Le Wang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang-Long Huang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ying Fu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shanmin Wang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Huimin Su
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jia-Wei Mei
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
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