Imaging the Spatial Distribution of Electronic States in Graphene Using Electron Energy-Loss Spectroscopy: Prospect of Orbital Mapping

Current opinion on the prospect of mapping electronic orbitals in the transmission electron microscope: State of the art, challenges and perspectives

The concept of electronic orbitals has enabled the understanding of a wide range of physical and chemical properties of solids through the definition of, for example, chemical bonding between atoms. In the transmission electron microscope, which is one of the most used and powerful analytical tools for high-spatial-resolution analysis of solids, the accessible quantity is the local distribution of electronic states. However, the interpretation of electronic state maps at atomic resolution in terms of electronic orbitals is far from obvious, not always possible, and often remains a major hurdle preventing a better understanding of the properties of the system of interest. In this review, the current state of the art of the experimental aspects for electronic state mapping and its interpretation as electronic orbitals is presented, considering approaches that rely on elastic and inelastic scattering, in real and reciprocal spaces. This work goes beyond resolving spectral variations between adjacent atomic columns, as it aims at providing deeper information about, for example, the spatial or momentum distributions of the states involved. The advantages and disadvantages of existing experimental approaches are discussed, while the challenges to overcome and future perspectives are explored in an effort to establish the current state of knowledge in this field. The aims of this review are also to foster the interest of the scientific community and to trigger a global effort to further enhance the current analytical capabilities of transmission electron microscopy for chemical bonding and electronic structure analysis.

Subnanometer Scale Mapping of Hydrogen Doping in Vanadium Dioxide

Hydrogen donor doping of correlated electron systems such as vanadium dioxide (VO2) profoundly modifies the ground state properties. The electrical behavior of HxVO2 is strongly dependent on the hydrogen concentration; hence, atomic scale control of the doping process is necessary. It is however a nontrivial problem to quantitatively probe the hydrogen distribution in a solid matrix. As hydrogen transfers its sole electron to the material, the ionization mechanism is suppressed. In this study, a methodology mapping the doping distribution at subnanometer length scale is demonstrated across a HxVO2 thin film focusing on the oxygen-hydrogen bonds using electron energy loss spectroscopy (EELS) coupled with first-principles EELS calculations. The hydrogen distribution was revealed to be nonuniform along the growth direction and between different VO2 grains, calling for intricate hydrogenation mechanisms. Our study points to a powerful approach to quantitatively map dopant distribution in quantum materials relevant to energy and information sciences.

Direct imaging of electron density with a scanning transmission electron microscope

Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron density of an encapsulated WSe2 layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of valence ionization of an isolated WSe2 cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that, in the future, subtle information about interlayer bonding and the effect on electron orbitals could be directly revealed with this technique.

Probing a Defect-Site-Specific Electronic Orbital in Graphene with Single-Atom Sensitivity

Visualization of individual electronic states ascribed to specific unoccupied orbitals at the atomic scale can reveal fundamental information about chemical bonding, but it is challenging since bonding often results in only subtle variations in the whole density of states. Here, we utilize atomic-resolution energy-loss near-edge fine structure (ELNES) spectroscopy to map out the electronic states attributed to specific unoccupied p_{z} orbital around a fourfold coordinated silicon point defect in graphene, which is further supported by theoretical calculations. Our results illustrate the power of atomic-resolution ELNES towards the probing of defect-site-specific electronic orbitals in monolayer crystals, providing insights into understanding the effect of chemical bonding on the local properties of defects in solids.

Four-dimensional electron energy-loss spectroscopy

Recent advances in scanning transmission electron microscopy have enabled atomic-scale focused, coherent, and monochromatic electron probes, achieving nanoscale spatial resolution, meV energy resolution, sufficient momentum resolution, and a wide energy detection range in electron energy-loss spectroscopy (EELS). A four-dimensional EELS (4D-EELS) dataset can be recorded with a slot aperture selecting the specific momentum direction in the diffraction plane and the beam scanning in two spatial dimensions. In this paper, the basic principle of the 4D-EELS technique and a few examples of its application are presented. In addition to parallelly acquired dispersion with energy down to a lattice vibration scale, it can map the real space variation of any EELS spectrum features with a specific momentum transfer and energy loss to study various locally inhomogeneous scattering processes. Furthermore, simple mathematical combinations associating the spectra at different momenta are feasible from the 4D dataset, e.g., the efficient acquisition of a reliable electron magnetic circular dichroism (EMCD) signal is demonstrated. This 4D-EELS technique provides new opportunities to probe the local dispersion and related physical properties at the nanoscale.

Optimizing experimental parameters for orbital mapping

A new material characterization technique is emerging for the transmission electron microscope (TEM). Using electron energy-loss spectroscopy, real space mappings of the underlying electronic transitions in the sample, so called orbital maps, can be produced. Thus, unprecedented insight into the electronic orbitals responsible for most of the electrical, magnetic and optical properties of bulk materials can be gained. However, the incredibly demanding requirements on spatial as well as spectral resolution paired with the low signal-to-noise ratio severely limits the day-to-day use of this new technique. With the use of simulations, we strive to alleviate these challenges as much as possible by identifying optimal experimental parameters. In this manner, we investigate representative examples of a transition metal oxide, a material consisting entirely of light elements, and an interface between two different materials to find and compare acceptable ranges for sample thickness, acceleration voltage and electron dose for a scanning probe as well as for parallel illumination.

Different atomic contrasts in HAADF images and EELS maps of rutile TiO2

High-angle annular dark-field (HAADF) imaging and elemental mapping at the atomic scale by scanning transmission electron microscopy (STEM) combined with electron energy-loss spectroscopy (EELS) are widely used for material characterization, in which quantitative understanding of the contrast of the image is required. Here, we report an unexpected image contrast in the elemental mapping of rutile TiO2, where the Ti L2,3 map shows an anisotropic elliptical shape that extends along the long axis in the octahedral structure, while the atomic contrast of Ti columns in the HAADF image is almost circular. Multi-slice simulation reveals that unique electron channeling related to the rutile structure and the difference of the potentials between HAADF and EELS cause the different atomic contrasts in the two images.

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the projected electron charge density in monolayer MoS2. We evaluate the contributions of both the core electrons and the valence electrons to the derived electron charge density; however, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D-STEM and the need for smaller electron probes.

Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles

Graphene remains of great interest in biomedical applications because of biocompatibility. Diseases relating to human senses interfere with life satisfaction and happiness. Therefore, the restoration by artificial organs or sensory devices may bring a bright future by the recovery of senses in patients. In this review, we update the most recent progress in graphene based sensors for mimicking human senses such as artificial retina for image sensors, artificial eardrums, gas sensors, chemical sensors, and tactile sensors. The brain-like processors are discussed based on conventional transistors as well as memristor related neuromorphic computing. The brain-machine interface is introduced for providing a single pathway. Besides, the artificial muscles based on graphene are summarized in the means of actuators in order to react to the physical world. Future opportunities remain for elevating the performances of human-like sensors and their clinical applications.