Landauer formula for the current through an interacting electron region

External fields effectively switch the spin channels of transition metal-doped β-phase tellurene from first principles

Non-volatile magnetic random-access memories have proposed the need for spin channel switching. However, this presents a challenge as each spin channel reacts differently to the external field. Tellurene is a semiconductor with a tunable bandgap, excellent stability, and high carrier concentration, but its lack of magnetic properties has hindered its application in spintronics. In this work, the influence of an external field on transition metal (TM)-doped β-tellurene is systematically analysed from first principles. First, the active-learning moment-tensor-potential (MTP) is used to verify the thermal stability of the V-doped system with the MTP proving to be 900 times faster than the traditional method. Subsequently, under biaxial strain ranging from -2% to 10%, the V-doped system undergoes a gradual transition from a magnetic semiconductor to a spin-gapless semiconductor, and further to a half-metal and magnetic metal. The band structure can be maintained under an electric field. By examining the magnetic anisotropy energy, the lattice changes profoundly impact the electromagnetic properties, particularly with the TMs being sensitive to strain. Moreover, the band structure is reflected in the spin resolution current of the magnetic tunnel junction. This work investigates the response of doped β-Te to external fields, revealing its potential applications in spintronics.

Unraveling the Nature of Spin Coupling in a Metal-Free Diradical: Theoretical Distinction of Ferromagnetic and Antiferromagnetic Interactions

Metal-free diradicals based on polycyclic aromatic hydrocarbons are promising candidates for organic spintronics due to their stable magnetism and tunable spin coupling. However, distinguishing and elucidating the origins of ferromagnetic and antiferromagnetic interactions in these systems remain challenging. Here, we investigate the 2-OS diradical molecule sandwiched between gold electrodes using a combined density functional theory and hierarchical equations of motion approach. We find that the dihedral angle between the radical moieties controls the nature and strength of the intramolecular spin coupling, transitioning smoothly from antiferromagnetic to ferromagnetic as the angle increases. Distinct features in the inelastic electron tunneling spectra are identified that can discern the two coupling regimes, including spin excitation steps whose energies directly reveal the exchange coupling constant. Mechanical stretching of the junction is predicted to modulate the spectral line shapes by adjusting the hybridization of the molecular radicals with the electrodes. Our work elucidates the electronic origin of tunable spin interactions in 2-OS and provides spectroscopic fingerprints for characterizing magnetism in metal-free diradicals.

Interpretation of molecular electron transport in ab initio many-electron framework incorporating zero-point nuclear motion effects

A computational methodology, founded on chemical concepts, is presented for interpreting the role of nuclear motion in the electron transport through single-molecule junctions (SMJ) using many-electron ab initio quantum chemical calculations. Within this approach the many-electron states of the system, computed at the SOS-ADC(2) level, are followed along the individual normal modes of the encapsulated molecules. The inspection of the changes in the partial charge distribution of the many-electron states allows the quantification of the electron transport and the estimation of transmission probabilities. This analysis improves the understanding of the relationship between internal motions and electron transport. Two SMJ model systems are studied for validation purposes, constructed from a conductor (BDA, benzene-1,4-diamine) and an insulator molecule (DABCO, 1,4-diazabicyclo[2.2.2]octane). The trends of the resulting transmission probabilities are in agreement with the experimental observations, demonstrating the capability of the approach to distinguish between conductor and insulator type systems, thereby offering a straightforward and cost-effective tool for such classifications via quantum chemical calculations.

Fano resonance in molecular junctions of spin crossover complexes

In this paper, we introduce a novel molecular switch paradigm that integrates spin crossover complexes with the Fano resonance effect. Specifically, by performing density-functional theory calculations, the feasibility of achieving Fano resonance using spin crossover complexes is demonstrated in our designed molecular junctions using the complex {Fe[H2B(pz)2]2[Bp(bipy)]} [pz = 1-pyrazolyl, Bp(bipy) = bis(phenylethynyl)(2,2'-bipyridine)]. It is further revealed that the Fano resonance, particularly the Fano dip, is most prominent in the junction with cobalt tips among all the schemes, together with the spin-filtering effect. Most importantly, this junction of cobalt tips is able to exhibit three distinct conductance states, which are controlled by the modulation of Fano resonance due to the spin-state transition of the complex and the applied gate voltage. Such a molecular switch paradigm holds potential for applications in logic gates, memory units, sensors, thermoelectrics, and beyond.

Transient temperature dynamics of reservoirs connected through an open quantum system

The dynamics of open quantum systems connected with several reservoirs attract great attention due to their importance in quantum optics, biology, quantum thermodynamics, transport phenomena, etc. In many problems, the Born approximation is applicable, which implies that the influence of the open quantum system on the reservoirs can be neglected. However, in the case of long-time dynamics or mesoscopic reservoirs, the reverse influence can be crucial. In this paper, we investigate the transient dynamics of several bosonic reservoirs connected through an open quantum system. We use an adiabatic approach to study the temporal dynamics of temperatures of the reservoirs during relaxation to thermodynamic equilibrium. We show that there are various types of temperature dynamics that strongly depend on the values of dissipative rates and initial temperatures. We demonstrate that temperatures of the reservoirs, including the hottest and coldest ones, can exhibit nonmonotonic behavior. Moreover, there are moments of time during which the reservoir with an initially intermediate temperature becomes the hottest or coldest reservoir. The obtained results pave the way for managing energy flows in mesoscale and nanoscale systems.

Transport and Nonreciprocity in Monitored Quantum Devices: An Exact Study

We study noninteracting fermionic systems undergoing continuous monitoring and driven by biased reservoirs. Averaging over the measurement outcomes, we derive exact formulas for the particle and heat flows in the system. We show that these currents feature competing elastic and inelastic components, which depend nontrivially on the monitoring strength γ. We highlight that monitor-induced inelastic processes lead to nonreciprocal currents, allowing one to extract work from measurements without active feedback control. We illustrate our formalism with two distinct monitoring schemes providing measurement-induced power or cooling. Optimal performances are found for values of the monitoring strength γ, which are hard to address with perturbative approaches.

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here it is shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing

van der Waals (vdW) multiferroic tunnel junctions (MFTJs) based on two-dimensional materials have gained significant interest due to their potential applications in next-generation data storage and in-memory computing devices. In this study, we construct vdW MFTJs by employing monolayer Mn2Se3 as the spin-filter tunnel barrier, TiTe2 as the electrodes and In2S3 as the tunnel barrier to investigate the spin transport properties based on first-principles quantum transport calculations. It is highlighted that apparent tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects with a maximum TMR ratio of 6237% and TER ratio of 1771% can be realized by using bilayer In2S3 as the tunnel barrier under finite bias. Furthermore, the physical origin of the distinguished TMR and TER effects is unraveled from the k||-resolved transmission spectra and spin-dependent projected local density of states analysis. Interestingly, four distinguishable conductance states reveal the implementation of four-state nonvolatile data storage using one MFTJ unit. More importantly, in-memory logic computing and multilevel data storage can be achieved at the same time by magnetic switching and electrical control, respectively. These results shed light on vdW MFTJs in the applications of in-memory computing as well as multilevel data storage devices.

Insight into the interface engineering between methylammonium lead halide perovskites and gallium oxide: a first-principles approach

Interface engineering of the organo-lead halide perovskite devices has shown the potential to improve their efficiency and stability. In this study, the atomic, electronic, optical and transport characteristics of MAPbI3/Ga2O3 and MAPbCl3/Ga2O3 interfaces were investigated by using first-principles calculations. Eight different interfacial models were established and the interfacial properties were discussed. The results show that the PbI/O configuration exhibits the largest bonding strength out of all eight interfacial configurations. Owing to the larger interfacial interaction, the charge transfer at the PbI/O interface is significantly more than that at the other interfaces. The analysis of absorption spectra indicates that the Ga-terminated perovskite/Ga2O3 heterostructures are expected to have great potential for efficient optoelectronic applications. The analysis of transmission spectra shows that the MA/O configurations with more transmission peaks near the Fermi level exhibit lower resistance compared to others. The results of our study could help understand the interfacial engineering mechanism between perovskite and Ga2O3.

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Two-dimensional (2D) ferroelectric semiconductors, such as α-In2Se3 with switchable spontaneous polarization and superior optoelectronic properties, exhibit large potential for functional device applications. The electric transport properties and device performance of 2D α-In2Se3 are strongly sensitive to the ferroelectric domain structures and polarization textures, but they are rarely explored at the atomic scale. Herein, by a combination of first-principles calculations and a developed domain switching theory, we report the domain nucleation kinetics and polarization-texture dependent electronic properties in α-In2Se3 ferroelectrics. Our calculated results reveal that the reversed domains characterized by armchair boundaries tend to form triangular or stripped shape. The energy barrier for propagating domain boundaries is ∼1.42 eV and can be reduced by loading external electric field, which is responsible for driving the evolution of domain structures. Moreover, the domain switching leads to notable changes in the band gap and carrier spatial distribution of α-In2Se3 monolayer, resulting in higher electric resistance of multi-polarization domain structures than that of single-polarization state. The domain structures of multilayer α-In2Se3 follow a layer-by-layer switching mechanism, which causes the transition of electronic structures from self-doped p-n junctions to type-II semiconductor homojunctions. This study not only provides an in-depth insight into the domain switching mechanisms of α-In2Se3 but also opens up the possibility to tailor their electronic and transport properties.

Shaping Electronic Flows with Strongly Correlated Physics

Nonequilibrium quantum transport is of central importance in nanotechnology. Its description requires the understanding of strong electronic correlations that couple atomic-scale phenomena to the nanoscale. So far, research in correlated transport has focused predominantly on few-channel transport, precluding the investigation of cross-scale effects. Recent theoretical advances enable the solution of models that capture the interplay between quantum correlations and confinement beyond a few channels. This problem is the focus of this study. We consider an atomic impurity embedded in a metallic nanosheet spanning two leads, showing that transport is significantly altered by tuning only the phase of a single local hopping parameter. Furthermore─depending on this phase─correlations reshape the electronic flow throughout the sheet, either funneling it through the impurity or scattering it away from a much larger region. This demonstrates the potential for quantum correlations to bridge length scales in the design of nanoelectronic devices and sensors.

Stereoelectronic Switches of Single-Molecule Junctions through Conformation-Modulated Intramolecular Coupling Approaches

Stereoelectronic effects in single-molecule junctions have been widely utilized to achieve a molecular switch, but high-efficiency and reproducible switching remain challenging. Here, we demonstrate that there are three stable intramolecular conformations in the 9,10-diphenyl-9,10-methanoanthracen-11-one (DPMAO) systems due to steric effect. Interestingly, different electronic coupling approaches including weak coupling (through-space), decoupling, and strong coupling (through-bond) between two terminal benzene rings are accomplished in the three stable conformations, respectively. Theoretical calculations show that the molecular conductance of three stable conformations differs by more than 1 order of magnitude. Furthermore, the populations of the three stable conformations are highly dependent on the solvent effect and the external electric field. Therefore, an excellent molecular switch can be achieved using the DPMAO molecule junctions and external stimuli. Our findings reveal that modulating intramolecular electronic coupling approaches may be a useful manner to enable molecular switches with high switching ratios. This opens up a new route for building high-efficiency molecular switches in single-molecular junctions.

Design and analysis of a 2D grapheneplus (G+)-based gas sensor for the detection of multiple organic gases

A new member of the 2D carbon family, grapheneplus (G+), has demonstrated excellent properties, such as Dirac cones and high surface area. In this study, the electronic transport properties of G+, NG+, and BG+ monolayers in which the NG+/BG+ can be obtained by replacing the center sp3 hybrid carbon atoms of the G+ with N/B atoms, were studied and compared using density functional theory and the non-equilibrium Green's function method. The results revealed that G+ is a semi-metal with two Dirac cones, which becomes metallic upon doping with N or B atoms. Based on the electronic structures, the conductivities of the 2D G+, NG+ and BG+-based nanodevices were analyzed deeply. It was found that the currents of all the designed devices increased with increasing the applied bias voltage, showing obvious quasi-linear current-voltage characteristics. IG+ was significantly higher than ING+ and IBG+ at the same bias voltage, and IG+ was almost twice IBG+, indicating that the electron mobility of G+ can be controlled by B/N doping. Additionally, the gas sensitivities of G+, NG+, and BG+-based gas sensors in detecting C2H4, CH2O, CH4O, and CH4 organic gases were studied. All the considered sensors can chemically adsorb C2H4 and CH2O, but there were only weak van der Waals interactions with CH4O and CH4. For chemical adsorption, the gas sensitivities of these sensors were considerably high and steady, and the sensitivity of NG+ to adsorb C2H4 and CH2O was greater as compared to G+ and BG+ at higher bias voltages. Interestingly, the maximum sensitivity difference for BG+ toward C2H4 and CH2O was 17%, which is better as compared to G+ and NG+. The high sensitivity and different response signals of these sensors were analyzed by transmission spectra and scattering state separation at the Fermi level. Gas sensors based on G+ monolayers can effectively detect organic gases such as C2H4 and CH2O, triggering their broad potential application prospects in the field of gas sensing.

Electronic Kapitza conductance and related kinetic coefficients at an interface between n-type semiconductors

We calculate the Kapitza conductance, which is the proportionality coefficient between heat flux and temperature jump at the interface, for the case of two conducting solids separated by the interface. We show that for conducting solids in a non-equilibrium state, there should also arise the electrochemical potential jump at the interface. Hence to describe linear transport at the interface we need three kinetic coefficients: interfacial analogs of electric and heat conductances and interfacial analog of the Seebeck coefficient. We calculate these coefficients for the case of an interface between n-type semiconductors. We perform calculations in the framework of Boltzmann transport theory. We have found out that the interfacial analog of the Seebeck coefficient for some range of parameters of the considered semiconductors, has a high value of about 10-3V K-1. Thus this effect has the potential to be used for the synthesis of effective thermoelectric materials.

Interface design of the thermoelectric transport properties of phosphorene-tetrathiafulvalene nanoscale devices

Interface design and energy band engineering are two key strategies for improving the thermoelectric conversion efficiency of low dimensional nanoscale devices. By using first-principle-based density functional theory combined with a non-equilibrium Green function method, the thermoelectric properties of a single tetrathiafulvalene (TTF) molecule coupled with armchair phosphorene nanoribbons (APNRs) within different interface modes have been investigated. The results indicate that phonon transport can be dramatically suppressed in this intermediate weak-coupling system due to strong interfacial phonon scattering behavior, where very few phonons can propagate through two nonbonded interface regions from left side lead to a TTF molecule and then to right side lead. Furthermore, connecting a thiophene group at both the head and tail of the intermediate TTF molecule can significantly enhance the power factor (S2σ) of such a weak-coupling system based on an out-of-plane electronic transmission mechanism, and there is obvious charge transfer from S atoms to upper and lower APNRs. Compared to a single regular method, composite interface co-design can achieve more accurate control of thermal/electrical transmission performance. Electrical conductance can be effectively improved with low phonon thermal conductance being maintained at the same time, and an excellent thermoelectric figure of merit (ZT) of 0.73 has been obtained near 0.6 eV.

Nonequilibrium Fractional Josephson Effect

Josephson tunnel junctions exhibit a supercurrent typically proportional to the sine of the superconducting phase difference ϕ. In general, a term proportional to cos(ϕ) is also present, alongside microscopic electronic retardation effects. We show that voltage pulses sharply varying in time prompt a significant impact of the cos(ϕ) term. Its interplay with the sin(ϕ) term results in a nonequilibrium fractional Josephson effect (NFJE) ∼sin(ϕ/2) in the presence of bound states close to zero frequency. Our microscopic analysis reveals that the interference of nonequilibrium virtual quasiparticle excitations is responsible for this phenomenon. We also analyze this phenomenon for topological Josephson junctions with Majorana bound states. Remarkably, the NFJE is independent of the ground state fermion parity unlike its equilibrium counterpart.

First-Principles Investigation of Nucleobase Detection by Tetranitrogen Coordinated Transition Metal Doped Graphene Nanoribbons

Detection of nucleobases is of great significance in DNA sequencing, which is one of the main goals of the Human Genome Project. By employing the nonequilibrium Green function method combined with density functional theory, we proposed a biosensor based on the TMN4 (TM = Ni, Cu) embedded graphene nanoribbons for nucleobase detection. The adsorption energy calculations show that all five nucleobases are physisorbed on the TMN4-doped graphene nanoribbons. Utilizing the distinction of current, the bases T, C, and U can be gradually detected at the biases of 0.4, 0.6, and 0.8 V by NiN4-doped graphene nanoribbons, respectively. The bases A and G can be finally distinguished by CuN4-doped graphene nanoribbons under an external bias of not less than 0.8 V. The identification of individual nucleobases at specific biases could provide a novel mechanism for the further development of biosensors in rapid genome sequencing applications.

A DFT Study of Volatile Organic Compounds Detection on Pristine and Pt-Decorated SnS Monolayers

Real-time monitoring of volatile organic compounds (VOCs) is crucial for both industrial production and daily life. However, the non-reactive nature of VOCs and their low concentrations pose a significant challenge for developing sensors. In this study, we investigated the adsorption behaviors of typical VOCs (C2H4, C2H6, and C6H6), on pristine and Pt-decorated SnS monolayers using density functional theory (DFT) calculations. Pristine SnS monolayers have limited charge transfer and long adsorption distances to VOC molecules, resulting in VOC insensitivity. The introduction of Pt atoms promotes charge transfer, creates new energy levels, and increases the overlap of the density of states, thereby enhancing electron excitation and improving gas sensitivity. Pt-decorated SnS monolayers exhibited high sensitivities of 241,921.7%, 35.7%, and 74.3% towards C2H4, C2H6, and C6H6, respectively. These values are 142,306.9, 23.8, and 82.6 times higher than those of pristine SnS monolayers, respectively. Moreover, the moderate adsorption energies of adsorbing C2H6 and C6H6 molecules ensure that Pt-decorated SnS monolayers possess good reversibility with a short recovery time at 298 K. When heated to 498 K, C2H4 molecules desorbs from the surface of Pt-decorated SnS monolayer in 162.33 s. Our results indicate that Pt-decorated SnS monolayers could be superior candidates for sensing VOCs with high selectivity, sensitivity, and reversibility.

Can room-temperature data for tunneling molecular junctions be analyzed within a theoretical framework assuming zero temperature?

Routinely, experiments on tunneling molecular junctions report values of conductances (G_RT) and currents (I_RT) measured at room temperature. On the other hand, theoretical approaches based on simplified models provide analytic formulas for the conductance (G_0K) and current (I_0K) valid at zero temperature. Therefore, interrogating the applicability of the theoretical results deduced in the zero-temperature limit to real experimental situations at room temperature (i.e., G_RT ≈ G_0K and I_RT ≈ I_0K) is a relevant aspect. Quantifying the pertaining temperature impact on the transport properties computed within the ubiquitous single-level model with Lorentzian transmission is the specific aim of the present work. Comprehensive results are presented for broad ranges of the relevant parameters (level's energy offset ε₀ and width Γ_a, and applied bias V) that safely cover values characterizing currently fabricated junctions. They demonstrate that the strongest thermal effects occur at biases below resonance (2|ε₀| - δε₀ - 0.3 ≲ |eV| - 0.3 ≲ 2|ε₀|). At fixed V, they affect an ε₀-range whose largest width δε₀ is about nine times larger than the thermal energy (δε₀ ≈ 3πk_BT) at Γ_a → 0. The numerous figures included aim to convey a quick overview on the applicability of the zero-temperature limit to a specific real junction. In quantitative terms, the conditions of applicability are expressed as mathematical inequalities involving elementary functions. They constitute the basis of a proposed interactive data-fitting procedure, which aims to guide experimentalists interested in data processing in a specific case.

Time-Linear Quantum Transport Simulations with Correlated Nonequilibrium Green's Functions

We present a time-linear scaling method to simulate open and correlated quantum systems out of equilibrium. The method inherits from many-body perturbation theory the possibility to choose selectively the most relevant scattering processes in the dynamics, thereby paving the way to the real-time characterization of correlated ultrafast phenomena in quantum transport. The open system dynamics is described in terms of an "embedding correlator" from which the time-dependent current can be calculated using the Meir-Wingreen formula. We show how to efficiently implement our approach through a simple grafting into recently proposed time-linear Green's function methods for closed systems. Electron-electron and electron-phonon interactions can be treated on equal footing while preserving all fundamental conservation laws.

Effect of surface functional groups on MXene conductivity

We report the in-plane electron transport in the MXenes (i.e., within the MXene layers) as a function of composition using the density-functional tight-binding method, in conjunction with the non-equilibrium Green's functions technique. Our study reveals that all MXene compositions have a linear relationship between current and voltage at lower potentials, indicating their metallic character. However, the magnitude of the current at a given voltage (conductivity) has different trends among different compositions. For example, MXenes without any surface terminations (Ti3C2) exhibit higher conductivity compared to MXenes with surface functionalization. Among the MXenes with -O and -OH termination, those with -O surface termination have lower conductivity than the ones with -OH surface terminations. Interestingly, conductivity changes with the ratio of -O and -OH on the MXene surface. Our calculated I-V curves and their conductivities correlate well with transmission functions and the electronic density of states around the Fermi level. The surface composition-dependent conductivity of the MXenes provides a path to tune the in-plane conductivity for enhanced pseudocapacitive performance.

Resistance saturation in semi-conducting polyacetylene molecular wires

Realizing the promises of molecular electronic devices requires an understanding of transport on the nanoscale. Here, we consider a Su-Schrieffer-Heeger model for semi-conducting trans-polyacetylene molecular wires in which we endow charge carriers with a finite lifetime. The aim of this exercise is two-fold: (i) the simplicity of the model allows an insightful numerical and analytical comparison of the Landauer and Kubo linear-response formalism; (ii) we distill the prototypical characteristics of charge transport through gapped mesoscopic systems and compare these to bulk semiconductors. We find that both techniques yield a residual differential conductance at low temperatures for contacted polyacetylene chains of arbitrary length-in line with the resistivity saturation in some correlated narrow-gap semiconductors. Quantitative agreement, however, is limited to not too long molecules. Indeed, while the Landauer transmission is suppressed exponentially with the system size, the Kubo response only decays hyperbolically. Our findings inform the choice of transport methodologies for the ab initio modelling of molecular devices.

CISS effect: Magnetocurrent-voltage characteristics with Coulomb interactions. II

One of the manifestations of chirality-induced spin selectivity is the appearance of a magnetocurrent. Magnetocurrent is defined as the difference between the charge currents at finite bias in a two terminal device for opposite magnetizations of one of the leads. In experiments on chiral molecules assembled in monolayers the magnetocurrent is dominantly odd in bias voltage, while theory often yields an even one. From theory it is known that the spin-orbit coupling and chirality of the molecule can only generate a finite magnetocurrent in the presence of interactions, either of the electrons with vibrational modes or among themselves, through the Coulomb interaction. Here we analytically show that the magnetocurrent in bipartite-chiral structures mediated through Coulomb interactions is exactly even in the wide band limit and exactly odd for semi-infinite leads due to the bipartite lattice symmetry of the Green's function. Our numerical results confirm these analytical findings.

Large tunneling magnetoresistance in spin-filtering 1T-MnSe2/h-BN van der Waals magnetic tunnel junction

The magnetic tunnel junction (MTJ), one of the most prominent spintronic devices, has been widely utilized for memory and computation systems. Electrical writing is considered as a practical method to enhance the performance of MTJs with high circuit integration density and ultralow-power consumption. Meanwhile, a large tunneling magnetoresistance (TMR), especially at the non-equilibrium state, is desirable for the improvement of the sensitivity and stability of MTJ devices. However, achieving both aspects efficiently is still challenging. Here, we propose a two-dimensional (2D) MTJ of 1T-MnSe₂/h-BN/1T-MnSe₂/h-BN/1T-MnSe₂ with efficient electrical writing, reliable reading operations and high potential to work at room temperature. First, for this proposed MTJ with a symmetrical structure and an antiparallel magnetic state, the degeneracy of the energy could be broken by an electric field, resulting in a 180° magnetization reversal. A first principles study confirms that the magnetization of the center 1T-MnSe₂ layer could be reversed by changing the direction of the electric field, when the magnetic configurations of the two outer 1T-MnSe₂ layers are fixed in the antiparallel state. Furthermore, we report a theoretical spin-related transport investigation of the MTJ at the non-equilibrium state. Thanks to the half-metallicity of 1T-MnSe₂, TMR ratios reach very satisfactory values of 2.56 × 10³% with the magnetization information written by an electric field at room temperature. In addition, the performance of the TMR effect exhibits good stability even when the bias voltage increases gradually. Our theoretical findings show that this proposed MTJ is a promising high performance spintronic device and could promote the design of ultralow-power spintronic devices.

Quasi-periodic scattering of topological edge states induced by the vacancies in chloridized gallium bismuthide nanoribbons

The chloridized gallium bismuthide was predicted to be a two-dimensional topological insulator with large topological band gap. It may be beneficial for achieving the quantum spin Hall effect and its related applications at high temperatures. To better understand the quantum transport in topological nanoribbons, we investigated the effect of vacancy on the quantum transport of topological edge states in the armchair chloridized gallium bismuthide nanoribbons by combining density functional theory and nonequilibrium Green's function. The results suggest the vacancies at center are more likely to cause the scattering of topological edge states. The average scattering is insensitive to the enlargement of vacancy along the transport direction. More interestingly, the obvious scattering of topological edge states can only be found at some special energies, and these special energies are distributed quasi-periodically. The quasi-periodic scattering may be used as a kind of fingerprint of vacancies. Our studies may be helpful for the application of topological nanoribbons.

Bipolar spin-filtering and giant magnetoresistance effect in spin-semiconducting zigzag graphene nanoribbons

Spintronics is one of the main topics in condensed matter physics, in which half-metallicity and giant magnetoresistance are two important objects to achieve. In this work, we study the spin dependent transport properties of zigzag graphene nanoribbons (ZGNR) with asymmetric edge hydrogenation and different magnetic configurations using the non-equilibrium Green's function method combined with density functional calculations. Our results show that when the magnetic configurations of the electrodes change from parallel to antiparallel, the currents in the tunnel junction change substantially, resulting in a high conductance state and a low conductance state, with the tunnel magnetoresistance (TMR) ratio larger than 1 × 10⁵% achieved. In addition, in the parallel magnetic configurations, an ideal bipolar spin filtering effect is observed, making it flexible to switch the spin polarity of current by reversing the bias direction. All these features originate from the spin semiconducting behavior of the asymmetrically hydrogenated ZGNRs. The findings suggest that asymmetric edge hydrogenation provides an important way to construct multi-functional spintronic devices with ZGNRs.

One-Shot GW Transport Calculations: A Charge-Conserving Solution

Transport measurements are a common method of characterizing small systems in chemistry and physics. When interactions are negligible, the current through submicrometer structures can be obtained using the Landauer formula. Meir and Wingreen derived an exact expression for the current in the presence of interactions. This powerful tool requires knowledge of the exact Green's function. Alternatively, self-consistent approximations for the Green's function are frequently sufficient for calculating the current while crucially satisfying all conservation laws. We provide here yet another alternative, circumventing the high computational cost of these methods. We present expressions for the electric and thermal currents in which the lowest-order self-energy is summed to all orders (one-shot GW approximation). We account for both self-energy and vertex corrections such that current is conserved. Our formulas for the currents capture important features due to interactions and, hence, provide a powerful tool for cases in which the exact solution cannot be found.

Energy dynamics, heat production and heat-work conversion with qubits: toward the development of quantum machines

We present an overview of recent advances in the study of energy dynamics and mechanisms for energy conversion in qubit systems with special focus on realizations in superconducting quantum circuits. We briefly introduce the relevant theoretical framework to analyze heat generation, energy transport and energy conversion in these systems with and without time-dependent driving considering the effect of equilibrium and non-equilibrium environments. We analyze specific problems and mechanisms under current investigation in the context of qubit systems. These include the problem of energy dissipation and possible routes for its control, energy pumping between driving sources and heat pumping between reservoirs, implementation of thermal machines and mechanisms for energy storage. We highlight the underlying fundamental phenomena related to geometrical and topological properties, as well as many-body correlations. We also present an overview of recent experimental activity in this field.

Electronic and transport properties of new carbon nanoribbons with 5-8-5 carbon rings: tuning stability by the edge shape effect

We predicted the existence of five carbon nanoribbons based on POPGraphene, by first-principles calculations. We investigated the role of the shape of the edges in stability, structural, electronic, and transport properties. Density functional theory (DFT) was implemented to relax the unit cell nanoribbons, and DFT combined with non-equilibrium Greens functions was used to obtain the transport properties of molecular devices. Our results strongly suggest that all nanoribbons are stable, and can be feasibly obtained through experiment. Furthermore, the edge termination with pentarings is an important factor in the stability of nanoribbons. The electronic properties show that the three zigzag nanoribbons have a metallic behavior and the two armchair ones are semiconductors, but with a very tiny indirect bandgap of 0.053 eV and 0.050 eV. The transport properties show that the presence of partially filled steep bands crossing deeper into the Fermi level triggers high conductivity in molecular devices and the presence of flat bands decreases the device conductivity. The presence of sub-bandgap regions triggers the rise of negative differential resistance (NDR) regions in the device operation. The molecular device behavior is strongly dependent on the shape of the edges, presenting characteristics of field effect transistors (FETs), lighting emitting diodes (LEDs), or resonant tunneling diodes (RTDs), depending on the edge termination and operation range.

Estimating the Number of Molecules in Molecular Junctions Merely Based on the Low Bias Tunneling Conductance at Variable Temperature

Temperature (T) dependent conductance G=G(T) data measured in molecular junctions are routinely taken as evidence for a two-step hopping mechanism. The present paper emphasizes that this is not necessarily the case. A curve of lnG versus 1/T decreasing almost linearly (Arrhenius-like regime) and eventually switching to a nearly horizontal plateau (Sommerfeld regime), or possessing a slope gradually decreasing with increasing 1/T is fully compatible with a single-step tunneling mechanism. The results for the dependence of G on T presented include both analytical exact and accurate approximate formulas and numerical simulations. These theoretical results are general, also in the sense that they are not limited, e.g., to the (single molecule electromigrated (SET) or large area EGaIn) fabrication platforms, which are chosen for exemplification merely in view of the available experimental data needed for analysis. To be specific, we examine in detail transport measurements for molecular junctions based on ferrocene (Fc). As a particularly important finding, we show how the present analytic formulas for G=G(T) can be utilized to compute the ratio f=Aeff/An between the effective and nominal areas of large area Fc-based junctions with an EGaIn top electrode. Our estimate of f≈0.6×10-4 is comparable with previously reported values based on completely different methods for related large area molecular junctions.

Equilibrium and Non-Equilibrium Lattice Dynamics of Anharmonic Systems

In this review, motivated by the recent interest in high-temperature materials, we review our recent progress in theories of lattice dynamics in and out of equilibrium. To investigate thermodynamic properties of anharmonic crystals, the self-consistent phonon theory was developed, mainly in the 1960s, for rare gas atoms and quantum crystals. We have extended this theory to investigate the properties of the equilibrium state of a crystal, including its unit cell shape and size, atomic positions and lattice dynamical properties. Using the equation-of-motion method combined with the fluctuation-dissipation theorem and the Donsker-Furutsu-Novikov (DFN) theorem, this approach was also extended to investigate the non-equilibrium case where there is heat flow across a junction or an interface. The formalism is a classical one and therefore valid at high temperatures.

Electronic structure, magnetoresistance and spin filtering in graphene|2 monolayer-CrI33|graphene van der Waals magnetic tunnel junctions

In the pursuit of designing van der Waals magnetic tunneling junctions (vdW-MTJs) with two-dimensional (2D) intrinsic magnets, as well as to quantitatively reveal the microscopic nature governing the vertical tunneling pathways beyond the phenomenological descriptions on CrI₃-based vdW-MTJs, we investigate the structural configuration, electronic structure and spin-polarized quantum transport of graphene|2 monolayer(2ML)-CrI₃|graphene heterostructure with Ag(111) layers as the electrode, using density functional theory (DFT) and its combination of non-equilibrium Green's function (DFT-NEGF) methods. The in-plane lattice of CrI₃ layers is found to be stretched when placed on the graphene (Gr) layer, and the layer-stacking does not show any site selectivity. The charge transfer between CrI₃ and Gr layers make the CrI₃ layer lightly electron-doped, and the Gr layer hole-doped. Excitingly, the inter-layer hybridization between graphene and CrI₃ layers render the CrI₃ layer metallic in the majority spin channel, giving rise to an insulator-to-half-metal transition. Due to the metallic/insulator characteristics of the spin-majority/minority channel of the 2ML-CrI₃ barrier in vdW-MTJs, Gr|2ML-CrI₃|Gr heterostructures exhibit an almost perfect spin filtering effect (SFE) near the zero bias in parallel magnetization, a giant tunneling magnetoresistance (TMR) ratio up to 2 × 10⁴%, and remarkable negative differential resistance (NDR). Our results not only give an explanation for the observed giant TMR in CrI₃-based MTJs but also show the direct implications of 2D magnets in vdW-heterostructures.

Robust covalent pyrazine anchors forming highly conductive and polarity-tunable molecular junctions with carbon electrodes

In molecular electronics, electrode-molecule anchoring strategies play a crucial role in the design of stable and high-performance functional single-molecule devices. Herein, we employ aromatic pyrazine as anchors to connect a central anthracene molecule to carbon electrodes including graphene and armchair single-walled carbon nanotubes (SWCNTs), and theoretically investigate their atomic structures and electronic transport properties. These molecular junctions can be constructed via condensation reactions of the central molecules terminated with ortho-phenylenediamines with ortho-quinone-functionalized nanogaps of graphene and SWCNT electrodes. With two direct C-N covalent bonds connecting the central molecule site-selectively to carbon electrodes in a coplanar way, pyrazine anchors are advantageous for forming stable and structurally well-defined molecular junctions, being expected to reduce the uncertainty about the electrode-molecule linkage motifs. The junction transport is highly efficient due to the coplanar geometry and the ensuing strong π-type molecule-electrode electronic coupling. Furthermore, our calculations show that molecular junctions with pyrazine anchors and carbon electrodes are usually n-type electronic devices; upon hydrogenation of pyridinic nitrogen atoms, the device polarity can be tuned to p-type, indicating that the pyrazine anchors can also serve as a powerful platform for tailoring in situ the polarity of charge carriers in carbon-electrode molecular electronic devices.

Performance improvement in monolayered SnS2 double-gate field-effect transistors via point defect engineering

Owing to the relatively high carrier mobility and on/off current ratio, monolayered SnS₂ has the advantage of suppressing drain-to-source tunneling for short channels, rendering it a promising candidate in field-effect transistor (FET) applications. To extend the scaling limit of the channel length, we propose to rationally modulate the electronic properties of monolayered SnS₂ through the customized design of point defects and simulate its performance limit in sub-5 nm double-gate FETs (DGFETs), using density functional theory combined with nonequilibrium Green's function formalism. Among all types of point defects, the Se atom as a substitutional dopant (Se_S) can nondegenerately inject electrons into each monolayered (ML) SnS₂ 2 × 4 × 1 supercell, whereas the Sn vacancy (V_Sn) defect exhibits an opposite doping effect. By adjusting the lateral Schottky barrier height between electrodes and the channel region, the on-state current (I_on), on/off ratio, delay time, and power-delay product in the formed n-type Se_S-doped SnS₂ and p-type V_Sn-doped SnS₂ DGFETs with a channel length of 4.5 nm have been remarkably improved, fulfilling the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high-performance applications in the 2028 horizon. Our work unveils the great significance of point defect engineering for applications in ultimately scaled electronics.

Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots

Quantum transport in multi-channel silicon nanowire transistors presents enhanced data capacity and driving ability by overlapping current, which are essential for constructing quantum logic platforms. However, the overlapping behavior of the quantum transport through multi-channels remains elusive. Herein, we demonstrated bias-dependent hole transport spectroscopy from zero-dimensional (0D) to one-dimensional (1D) features in a lightly boron-doped multi-channel silicon nanowire transistor. The evolution of the initial 0D conductance peak splitting with source/drain bias voltages reveals the statistically distributed positions of single dopant atoms in multi-channels relative to the source or drain side. Two sets of 1D subbands are determined separately for heavy and light holes with different effective masses by measuring the positions of transconductance valleys, which have a negative shift with increasing bias voltage. Our results will benefit the practical utilization of silicon-based devices with atomic-level functionality in the field of quantum computation.

Electronic, transport, magnetic and optical properties of graphene nanoribbons review

Low dimensional materials have attracted great research interest from both theoretical and experimental point of view. These materials exhibit novel physical and chemical properties due to the confinement effect in low dimensions. The experimental observations of graphene open a new platform to study the physical properties of materials restricted to two dimensions. This featured article provides a review on the novel properties of quasi one-dimensional (1D) material known as graphene nanoribbon. Graphene nanoribbons can be obtained by unzipping carbon nanotubes (CNTs) or cutting the graphene sheet. Alternatively, it is also called the finite termination of graphene edges. It gives rise different edge geometries namely zigzag and armchair among others. There are various physical and chemical techniques to realize these materials. Depending on the edge type termination, these are called the zigzag and armchair graphene nanoribbons (ZGNR and AGNR). These edges play an important role in controlling the properties of graphene nanoribbons. The present review article provides an overview of the electronic, transport, optical and magnetic properties of graphene nanoribbons. However, there are different ways to tune these properties for device applications. Here, some of them are highlighted such as external perturbations and chemical modifications. Few applications of graphene nanoribbon have and chemical modifications. Few applications of graphene nanoribbon have also been briefly discussed.

Magnetoconductance Anisotropies and Aharonov-Casher Phases

The spin-orbit interaction (SOI) is a key tool for manipulating and functionalizing spin-dependent electron transport. The desired function often depends on the SOI-generated phase that is accumulated by the wave function of an electron as it passes through the device. This phase, known as the Aharonov-Casher phase, therefore depends on both the device geometry and the SOI strength. Here, we propose a method for directly measuring the Aharonov-Casher phase generated in an SOI-active weak link, based on the Aharonov-Casher-phase dependent anisotropy of its magnetoconductance. Specifically, we consider weak links in which the Rashba interaction is caused by an external electric field, but our method is expected to apply also for other forms of the spin-orbit coupling. Measuring this magnetoconductance anisotropy thus allows calibrating Rashba spintronic devices by an external electric field that tunes the spin-orbit interaction and hence the Aharonov-Casher phase.

Multi-scale electronics transport properties in non-ideal CVD graphene sheet

In this work, we benchmark non-idealities and variations in the two-dimensional graphene sheet. We have simulated more than two hundred graphene-based devices structure. We have simulated distorted graphene sheets and have included random, inhomogeneous, asymmetric out-of-plane surface corrugation and in-plane deformation corrugation in the sheet through autocorrelation function in the non-equilibrium Green's function (NEGF) framework to introduce random distortion in flat graphene. These corrugation effects inevitably appear in the graphene sheet due to background substrate roughness or the passivation encapsulation material morphology in the transfer step. We have examined the variation in density of state, propagating density of transmission modes, electronic band structure, electronic density, and hole density in those device structures. We have observed that the surface corrugation increases the electronic and hole density distribution variation across the device and creates electron-hole charge puddles in the sheet. This redistribution of microscopic charge in the sheet is due to the lattice fields' quantum fluctuation and symmetry breaking. Furthermore, to understand the impact of scattered charge distribution on the sheet, we simulated various impurity effects within the NEGF framework. The study's objective is to numerically simulate and benchmark numerous device design morphology with different background materials compositions to elucidate the electrical property of the sheet device.

A statistical quasi-particles thermofield theory with Gaussian environments: System-bath entanglement theorem for nonequilibrium correlation functions

For open quantum systems, environmental dissipative effect can be represented by statistical quasi-particles, namely dissipatons. We exploit this fact to establish the dissipaton thermofield theory. The resulting generalized Langevin dynamics of absorptive and emissive thermofield operators are effectively noise-resolved. The system-bath entanglement theorem is then readily followed between a important class of nonequilibrium steady-state correlation functions. All these relations are validated numerically. A simple corollary is the transport current expression, which exactly recovers the result obtained from the nonequilibrium Green's function formalism.

The superior effect of edge functionalization relative to basal plane functionalization of graphene in enhancing the thermal conductivity of polymer-graphene nanocomposites - a combined molecular dynamics and Green's functions study

To achieve polymer-graphene nanocomposites with high thermal conductivity (k), it is critically important to achieve efficient thermal coupling between graphene and the surrounding polymer matrix through effective functionalization schemes. In this work, we demonstrate that edge-functionalization of graphene nanoplatelets (GnPs) can enable a larger enhancement of effective thermal conductivity in polymer-graphene nanocomposites relative to basal plane functionalization. Effective thermal conductivity for the edge case is predicted, through molecular dynamics simulations, to be up to 48% higher relative to basal plane bonding for 35 wt% graphene loading with 10 layer thick nanoplatelets. The beneficial effect of edge bonding is related to the anisotropy of thermal transport in graphene, involving very high in-plane thermal conductivity (∼2000 W m^-1 K^-1) compared to the low out-of-plane thermal conductivity (∼10 W m^-1 K^-1). Likewise, in multilayer graphene nanoplatelets (GnPs), the thermal conductivity across the layers is even lower due to the weak van der Waals bonding between each pair of layers. Edge functionalization couples the polymer chains to the high in-plane thermal conduction pathway of graphene, thus leading to overall high thermal conductivity of the composite. Basal-plane functionalization, however, lowers the thermal resistance between the polymer and the surface graphene sheets of the nanoplatelet only, causing the heat conduction through inner layers to be less efficient, thus resulting in the basal plane scheme to be outperformed by the edge scheme. The present study enables fundamentally novel pathways for achieving high thermal conductivity polymer nanocomposites.

Toward Quantum Computing with Molecular Electronics

In this study, we explore the use of molecules and molecular electronics for quantum computing. We construct one-qubit gates using one-electron scattering in molecules and two-qubit controlled-phase gates using electron-electron scattering along metallic leads. Furthermore, we propose a class of circuit implementations, and show initial applications of the framework by illustrating one-qubit gates using the molecular electronic structure of molecular hydrogen as a baseline model.

Two-Channel Charge-Kondo Physics in Graphene Quantum Dots

Nanoelectronic quantum dot devices exploiting the charge-Kondo paradigm have been established as versatile and accurate analogue quantum simulators of fundamental quantum impurity models. In particular, hybrid metal–semiconductor dots connected to two metallic leads realize the two-channel Kondo (2CK) model, in which Kondo screening of the dot charge pseudospin is frustrated. In this article, a two-channel charge-Kondo device made instead from graphene components is considered, realizing a pseudogapped version of the 2CK model. The model is solved using Wilson’s Numerical Renormalization Group method, uncovering a rich phase diagram as a function of dot–lead coupling strength, channel asymmetry, and potential scattering. The complex physics of this system is explored through its thermodynamic properties, scattering T-matrix, and experimentally measurable conductance. The strong coupling pseudogap Kondo phase is found to persist in the channel-asymmetric two-channel context, while in the channel-symmetric case, frustration results in a novel quantum phase transition. Remarkably, despite the vanishing density of states in the graphene leads at low energies, a finite linear conductance is found at zero temperature at the frustrated critical point, which is of a non-Fermi liquid type. Our results suggest that the graphene charge-Kondo platform offers a unique possibility to access multichannel pseudogap Kondo physics.

Magnetic-Field Universality of the Kondo Effect Revealed by Thermocurrent Spectroscopy

Probing the universal low-temperature magnetic-field scaling of Kondo-correlated quantum dots via electrical conductance has proved to be experimentally challenging. Here, we show how to probe this in nonlinear thermocurrent spectroscopy applied to a molecular quantum dot in the Kondo regime. Our results demonstrate that the bias-dependent thermocurrent is a sensitive probe of universal Kondo physics, directly measures the splitting of the Kondo resonance in a magnetic field, and opens up possibilities for investigating nanosystems far from thermal and electrical equilibrium.

Generalized master equation for charge transport in a molecular junction: Exact memory kernels and their high order expansion

We derive a set of generalized master equations (GMEs) to study charge transport dynamics in molecular junctions using the Nakajima-Zwanzig-Mori projection operator approach. In the new GME, time derivatives of population on each quantum state of the molecule, as well as the tunneling current, are calculated as the convolution of time non-local memory kernels with populations on all system states. The non-Markovian memory kernels are obtained by combining the hierarchical equations of motion (HEOM) method and a previous derived Dyson relation for the exact kernel. A perturbative expansion of these memory kernels is then calculated using the extended HEOM developed in our previous work [M. Xu et al., J. Chem. Phys. 146, 064102 (2017)]. By using the resonant level model and the Anderson impurity model, we study properties of the exact memory kernels and analyze convergence properties of their perturbative expansions with respect to the system-bath coupling strength and the electron-electron repulsive energy. It is found that exact memory kernels calculated from HEOM exhibit short memory times and decay faster than the population and current dynamics. The high order perturbation expansion of the memory kernels can give converged results in certain parameter regimes. The Padé and Landau-Zener resummation schemes are also found to give improved results over low order perturbation theory.

Nonequilibrium Green's function method for phonon heat transport in quantum system

Phonon heat transport property in quantum devices is of great interesting since it presents significant quantum behaviors. In the past few decades, great efforts have been devoted to establish the theoretical method for phonon heat transport simulation in nanostructures. However, modeling phonon heat transport from wavelike coherent regime to particlelike incoherent regime remains a challenging task. The widely adopted theoretical approach, such as molecular dynamics, semiclassical Boltzmann transport equation, captures quantum mechanical effects within different degrees of approximation. Among them, Non-equilibrium Green's function (NEGF) method has attracted wide attention, as its ability to perform full quantum simulation including many-body interactions. In this review, we summarized recent theoretical advances of phonon NEGF method and the applications on the numerical simulation for phonon heat transport in nanostructures. At last, the challenges of numerical simulation are discussed.