Resonant nonlinear susceptibility near the GaAs band gap

XUV Rectification Effect in the IR-Dressed Medium

We show that the quasistatic dipole moment can be induced by a short extreme ultraviolet (XUV) pulse (XUV rectification effect) in atomic gas medium subjected to an intense infrared (IR) field (IR-dressed atoms). The general theory of the XUV rectification effect for a single IR-dressed atom is presented, which explicitly relates IR-modified polarizability of an atomic system in the XUV range with the induced quasistatic dipole moment. We illustrate general properties of the XUV rectification effect in an atomic system within the analytical zero-range potential model by presenting the dependence on the IR-field intensity and the time delay between XUV and IR pulses.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

Ultrafast light-driven magneto-optical nonlinearity in ferromagnetic heterostructures

The dynamic control of magnetization by short laser pulses has recently attracted interest. The transient magnetization at the metallic magnetic interface has been investigated through second-harmonic generation and the time-resolved magneto-optical effect. However, the ultrafast light-driven magneto-optical nonlinearity in ferromagnetic heterostructures for terahertz (THz) radiation remains unclear. Here, we present THz generation from a metallic heterostructure, Pt/CoFeB/Ta, which is ascribed to an ∼6-8% contribution from the magnetization-induced optical rectification and an ∼94-92% contribution from both spin-to-charge current conversion and ultrafast demagnetization. Our results show that THz-emission spectroscopy is a powerful tool to study the picosecond-time-scale nonlinear magneto-optical effect in ferromagnetic heterostructures.

Terahertz Pulse Generation from GaAs Metasurfaces

Ultrafast optical excitation of select materials gives rise to the generation of broadband terahertz (THz) pulses. This effect has enabled the field of THz time-domain spectroscopy and led to the discovery of many physical mechanisms behind THz generation. However, only a few materials possess the required properties to generate THz radiation efficiently. Optical metasurfaces can relax stringent material requirements by shifting the focus onto the engineering of local electromagnetic fields to boost THz generation. Here we demonstrate the generation of THz pulses in a 160 nm thick nanostructured GaAs metasurface. Despite the drastically reduced volume, the metasurface emits THz radiation with efficiency comparable to that of a thick GaAs crystal. We reveal that along with classical second-order volume nonlinearity, an additional mechanism contributes strongly to THz generation in the metasurface, which we attribute to surface nonlinearity. Our results lay the foundation for engineering of semiconductor metasurfaces for efficient and versatile THz radiation emitters.

Terahertz generation from ZnTe optically pumped above and below the bandgap

We report on the generation of THz waves through optical rectification in ZnTe of femtosecond laser pulses whose photon energy is tuned from below to above the ZnTe bandgap energy. The THz signal exhibits a pronounced peak at the bandgap energy, at THz frequencies for which losses in ZnTe remain small. This peak is likely due to the resonance of the ZnTe nonlinear susceptibility in the vicinity of the bandgap.

Resonant Second-Order Nonlinear Terahertz Response of Gallium Arsenide

The second-order nonlinear response of bulk GaAs in the terahertz (THz) range is mapped via the THz field emitted after near-infrared interband excitation. Phase-resolved THz detection reveals three nonlinear processes occurring in parallel, the Raman excitation of transverse optical phonons, the creation of coherent polarizations on heavy-hole-light-hole transitions, and the generation of displacive shift currents with a THz spectrum controlled by the near-infrared optical phase. Theoretical calculations reproduce the data and demonstrate the interband character of shift currents.

Full electro-optic terahertz time-domain spectrometer for polarimetric studies

We present a terahertz (THz) time-domain spectrometer dedicated to polarimetric studies. THz pulses are generated through optical rectification in a ⟨111⟩-cut cubic crystal. The ⟨111⟩ crystal cut produces a THz polarization state similar to that of the exciting laser beam. Detection of the THz pulses is performed by electro-optic sampling in a similar crystal, and a dual detection scheme allows us to measure simultaneously the two polarization components of the THz beam. We experimentally illustrate that the polarization of the THz beam can be adjusted by adjusting the laser polarization. This technique alleviates the need for a polarization controller at THz frequencies.

Resonant terahertz generation from InN thin films

Highly efficient conversion from ultrafast optical pulses to their terahertz (THz) counterparts has been achieved with InN thin films. An average THz output power as high as 0.931 microW has been obtained for an average pump power of 1 W, corresponding to a normalized conversion efficiency of 190% mm(-2). Based on our measured dependences of the THz output power on pump polarization, incident angle, pump power, and InN film thickness, resonance-enhanced optical rectification is one of the most plausible mechanisms for the THz generation in the InN films.

Terahertz wave generation and detection from a cdte crystal characterized by different excitation wavelengths

Terahertz (THz) wave generation and detection from a (110)-oriented CdTe crystal via optical rectification and electro-optic sampling has been performed with laser wavelengths ranging from 710 to 970 nm. Three optical rectification regimes are studied with various excitation wavelengths: a resonance-enhanced regime above the bandgap, a highly phase-mismatched regime near the band gap, and a semi-phase-matched regime. A CdTe crystal generates more THz power than a ZnTe crystal at 970 nm.

Materials for terahertz science and technology

Terahertz spectroscopy systems use far-infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems: novel, higher-power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.

Optical rectification in an area with a diameter comparable to or smaller than the center wavelength of terahertz radiation

We report the measurement of optically rectified terahertz (THz) wave power relative to the optical excitation area. Rectified THz wave power reaches its maximum when radius r of the optical excitation area is comparable to the center wavelength of the rectified THz radiation. When r is smaller than the center wavelength of the rectified THz radiation, an r(2) relationship is demonstrated. A model based on optical rectification and Bethe's diffraction theory is used to describe this relationship.