Systematic development of the spectral function in the 3d1 Mott-Hubbard system Ca1-xSrxVO3

Tuning the Transparency Window of SrVO3 Transparent Conducting Oxide

Correlated transparent conducting oxides (TCOs) have gained great attention, because of their unique combination of transparency and metallic character. SrVO3 (SVO) was identified as a high-performance TCO in the visible range. Few studies have investigated band structure engineering through chemical doping to enhance the optical properties of SVO. Here, we use two different strategies by exploiting the band-filling and width of the bands derived from Vanadium to tune the screened plasma frequency ωp* and the interband transition Ep-d energy, corresponding to the optical transparency window edges. For control of the band-filling strategy, it is found that Titanium doped SVO has a wide transparency window, but such a composition does not maintain the high electrical conductivity required for TCO applications. Concerning the bandwidth strategy, the doping of SrVO3 by Calcium shows that ωp* remains located in the IR range (1.12 eV), while Ep-d is blue-shifted into the UV region (3.43 eV) due to reinforced electronic correlations. By an appropriate choice of dopant, we successfully increased the size of the transparency window by around 11% from 1.94 eV (SVO) to 2.30 eV (Calcium-doped SVO), while retaining high conductivity of around 2.30 × 104 (S·cm-1) and high charge carrier density of 2.93 × 1022 cm-3.

Evolution of ferrimagnetism against Griffiths singularity in calcium ruthenate

The magnetism in the correlated metal CaRuO3is enigmatic as it is poised near a triple point among the ferromagnetic, antiferromagnetic, and paramagnetic ground states. Here we report a detailed work on structural, spectroscopic, magnetic, and transport properties in CaRu1-xCrxO3. We find that Cr doping reduces the orthorhombicity in CaRuO3. Surprisingly, a tiny (x= 0.01) amount of Cr-doping drives the magnetic ground state from 'paramagnetic-like' to ferrimagnetic. Slightly higher Cr-doping (x= 0.05) results formation of magnetic clusters which gives rise to Griffiths singularity and power law divergence in magnetic susceptibility. The magnetism in CaRu1-xCrxO3is explained in terms of 'seven atom' ferrimagnetic clusters. Electrical transport shows a gradual evolution of a non-metallic state upon Cr-doping. In particular, forx⩾0.1, the temperature-dependent resistivity follows Mott-VRH conduction. The XPS study also supports significant role of disorder and electron correlation which effectively reduces the itinerant character of electrons. Finally, a new T-x phase diagram is constructed depicting the evolution of electronic and magnetic state in CaRu1-xCrxO3.

Truncated mass divergence in a Mott metal

The Mott metal-insulator transition represents one of the most fundamental phenomena in condensed matter physics. Yet, basic tenets of the canonical Brinkman-Rice picture of Mott localization remain to be tested experimentally by quantum oscillation measurements that directly probe the quasiparticle Fermi surface and effective mass. By extending this technique to high pressure, we have examined the metallic state on the threshold of Mott localization in clean, undoped crystals of NiS2. We find that i) on approaching Mott localization, the quasiparticle mass is strongly enhanced, whereas the Fermi surface remains essentially unchanged; ii) the quasiparticle mass closely follows the divergent form predicted theoretically, establishing charge carrier slowdown as the driver for the metal-insulator transition; iii) this mass divergence is truncated by the metal-insulator transition, placing the Mott critical point inside the insulating section of the phase diagram. The inaccessibility of the Mott critical point in NiS2 parallels findings at the threshold of ferromagnetism in clean metallic systems, in which criticality at low temperature is almost universally interrupted by first-order transitions or novel emergent phases such as incommensurate magnetic order or unconventional superconductivity.

Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO₃ (SVO) sandwich a barrier layer of the band insulator SrTiO₃. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.

Terahertz spectroscopic evidence of electron correlations in SrVO3epitaxial thin films

Electron correlation in transition metal oxides (TMOs) is an intriguing topic in condensed matter physics, revealing a wide variety of exotic physical properties. Investigating low-energy carrier dynamics by terahertz (THz) spectroscopy is an efficient route to obtain the essential insights into electron correlation. In the present study, THz-time-domain spectroscopy is employed to probe electron correlation in SrVO₃epitaxial thin films. The low energy carrier dynamics of SrVO₃in the range of 0.2-6.0 meV shows a typical metallic behavior as overserved in dc transport measurements. The obtained temperature-dependent optical parameters provide evidence of mass renormalization in the low energy regime and carrier momentum relaxation happens via the electron-electron scattering mechanism. Overall, the frequency and temperature-dependent optical parameters indicate the Fermi liquid ground state in a Mott-Hubbard type correlated metal SrVO₃thin film. Our results provide significant insight on low energy carrier dynamics in the correlated electron system, particularly perovskite-basedd¹TMOs.

Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials

The metal-insulator transition (MIT) in correlated materials is a novel phenomenon that accompanies a large change in resistivity, often many orders of magnitude. It is important in its own right but its switching behavior in resistivity can be useful for device applications. From the material physics point of view, the starting point of the research on the MIT should be to understand the microscopic mechanism. Here, an overview of recent efforts to unravel the microscopic mechanisms for various types of MITs in correlated materials is provided. Research has focused on transition metal oxides (TMOs), but transition metal chalcogenides have also been studied. Along the way, a new class of MIT materials is discovered, the so-called relativistic Mott insulators in 5d TMOs. Distortions in the MO₆ (M = transition metal) octahedron are found to have a large and peculiar effect on the band structure in an orbital dependent way, possibly paving a way to the orbital selective Mott transition. In the final section, the character of the materials suitable for applications is summarized, followed by a brief discussion of some of the efforts to control MITs in correlated materials, including a dynamical approach using light.

Varied roles of Pb in transition-metal PbMO3 perovskites (M = Ti, V, Cr, Mn, Fe, Ni, Ru)

Different structural chemistries resulting from the Pb2+ lone-pair electrons in the PbMO3 perovskites are reviewed. The Pb2+ lone-pair electrons enhance the ferroelectric transition temperature in PbTiO3, stabilize vanadyl formation in PbVO3, and induce a disproportionation reaction of CrIV in PbCrO3. A Pb2+ + NiIV = Pb4+ + NiII reaction in PbNiO3 stabilizes the LiNbO3 structure at ambient pressure, but an A-site Pb4+ in an orthorhombic perovskite PbNiO3 is stabilized at modest pressures at room temperature. In PbMnO3, a ferroelectric displacement due to the lone pair electron effect is minimized by the spin-spin exchange interaction and the strong octahedral site preference of the MnIV/III cation. PbRuO3 is converted under pressure from the defective pyrochlore to the orthorhombic (Pbnm) perovskite structure where Pb-Ru interactions via a common O -2p orbital stabilize at low temperature a metallic Imma phase at ambient pressure. Above Pc [Formula: see text] a covalent Pb-Ru bond is formed by Pb2+ + RuIV = Pb4+ + RuII electron sharing.

Low temperature magnetic and transport properties of LSMO–PZT nanocomposites

(a) M–H curves of different nanocomposites (NCs) at 80 K. Left and right insets show M vs. H and dM/dH vs. H curves respectively; (b) Magneto-resistance (MR) vs. H curve of different NCs at 200 K. Inset figure shows MR vs. H curve for a typical NC at various temperatures.

Self-energy on the low- to high-energy electronic structure of correlated metal SrVO3

The correlated electronic structure of SrVO(3) has been investigated by angle-resolved photoemission spectroscopy using in situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ∼60 meV below the Fermi level (E(F)) and a broad so-called "high-energy kink" ∼0.3 eV below E(F) as in the high-T(c) cuprates, although SrVO(3) does not show magnetic fluctuations. We have deduced the self-energy in a wide energy range by applying the Kramers-Kronig relation to the observed spectra. The obtained self-energy clearly shows a large energy scale of ∼0.7 eV, which is attributed to electron-electron interaction and gives rise to the ∼0.3 eV kink in the band dispersion as well as the incoherent peak ∼1.5 eV below E(F). The present analysis enables us to obtain a consistent picture for both the incoherent spectra and the band renormalization.

General DFT++ method implemented with projector augmented waves: electronic structure of SrVO3 and the Mott transition in Ca(2-x)Sr(x)RuO4

The realistic description of correlated electron systems took an important step forward a few years ago as the combination of density functional methods and dynamical mean-field theory was conceived. This framework allows access to both high and low energy physics and is capable of the description of the specific physics of strongly correlated materials, like the Mott metal-insulator transition. A very important step in the procedure is the interface between the band structure method and the dynamical mean-field theory and its impurity solver. We present a general interface between a projector augmented-wave-based density functional code and many-body methods based on Wannier functions obtained from a projection on local orbitals. The implementation is very flexible and allows for various applications. Quantities like the momentum-resolved spectral function are accessible. We present applications to SrVO(3) and the metal-insulator transition in Ca(2-x)Sr(x)RuO(4).

Electronic structure of the band-filling-controlled CaVO3 and LaVO3 compounds

We studied the electronic structure of the band-filling CaVO(3) and LaVO(3) compounds. The experimental techniques were photoemission (PES) and x-ray absorption (XAS) spectroscopy. The experimental results were analyzed using an extended cluster model. The ground states of CaVO(3) and LaVO(3) are highly covalent and contain a considerable 3d(n + 1)L contribution. The CaVO(3) compound is in the charge transfer regime (Δ < U), whereas the LaVO(3) material is in the intermediate regime (Δ ∼ U). The spectral weight distributions reveal that CaVO(3) is a coherent metal and that LaVO(3) is a p-d insulator. The photoemission of CaVO(3) shows the coherent peak (3d(1)C) and the incoherent feature (3d(1)L). The spectrum of insulating LaVO(3) presents only the incoherent structure (3d(2)L), whereas the coherent peak is replaced by the Mott-Hubbard screening (3d(2)D). This transfer of spectral weight is responsible for the opening of the experimental bandgap. The incoherent feature contains a considerable O 2p character and cannot be attributed to the lower Hubbard band. Further, the relative V 3d-O 2p cross section helps to explain the photon energy dependence of the PES spectra. The addition spectra of both CaVO(3) and LaVO(3) are dominated by the 3d(n + 1) final state configuration. The distribution of spectral weight is mainly dictated by intra-atomic exchange and crystal field splittings. The coherent contribution is less important than in photoemission, and is greatly diminished in the O 1s x-ray absorption spectra.

Coherent and Incoherent Excitations of Electron-Doped SrTiO3

Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO(3) thin film revealed that the coherent state (CS) at the Fermi level (E(F)) had a mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned approximately 1.5 eV below E(F) had a mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through d-p hybridization. We discuss the evolution of the excitation spectrum with 3d band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.

Bulk- and surface-sensitive high-resolution photoemission study of two mott-hubbard systems: SrVO3 and CaVO3

We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface-sensitive high-resolution photoemission spectroscopy, using a vacuum ultraviolet laser, synchrotron radiation, and a discharge lamp (hv = 7-21 eV). A systematic suppression of the density of states (DOS) within approximately 0.2 eV of the Fermi level (EF) is found on decreasing photon energy, i.e., on increasing bulk sensitivity. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features, separated in energy. The stronger distortion on surface of CaVO3 compared to SrVO3 leads to a higher surface metallicity in the coherent DOS at EF, consistent with recent theory.

Direct observation of the mass renormalization in SrVO3 by angle resolved photoemission spectroscopy

Band dispersions and Fermi surfaces of the three-dimensional Mott-Hubbard system SrVO3 are directly observed by angle-resolved photoemission spectroscopy. An observed spectral weight distribution near the Fermi level (E(F)) shows cylindrical Fermi surfaces as predicted by band-structure calculations. By comparing the experimental results with calculated surface electronic structures, we conclude that the obtained band dispersion reflects the bulk electronic structure. The enhanced effective electron mass obtained from the energy band near E(F) is consistent with the bulk thermodynamic properties and hence with the normal Fermi-liquid behavior of SrVO3.

Mutual experimental and theoretical validation of bulk photoemission spectra of Sr1-xCaxVO3

We report high-resolution high-energy photoemission spectra together with parameter-free LDA + DMFT (local density approximation + dynamical mean-field theory) results for Sr1-xCaxVO3, a prototype 3d(1) system. In contrast to earlier investigations the bulk spectra are found to be insensitive to x. The good agreement between experiment and theory confirms the bulk sensitivity of the high-energy photoemission spectra.

Core-level x-ray photoemission satellites in ruthenates: a new mechanism revealing the Mott transition

Core-level x-ray photoemission spectra for the Mott-Hubbard systems are calculated by the dynamical mean-field theory based on the exact diagonalization method. The spectra show a two-peak structure, screened and unscreened peaks. The screened peak is absent in a Mott insulator, but develops into the main peak when the correlation strength becomes weak and the system turns metallic. The calculated spectral behavior is consistent with the experimental Ru 3d core-level spectra of various ruthenates. This new mechanism of the core-level photoemission satellite can be utilized to reveal the Mott transition phenomenon in various strongly correlated electron systems, especially in nanoscale devices and phase-separated materials.

Surface versus bulk Coulomb correlations in photoemission spectra of SrVO3 and CaVO3

Recent photoemission spectra of the perovskite series CaxSr1-xVO3 revealed strong modifications associated with surface contributions. To study the effect of Coulomb correlations in the bulk and at the surface, the quasiparticle spectra are evaluated using the dynamical mean field theory. It is shown that as a result of the reduced coordination number of surface atoms correlation effects are stronger at the surface than in the bulk, in agreement with experiment.

Fermi surface of 3d1 perovskite CaVO3 near the Mott transition

We present a detailed de Haas-van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement, but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.