Electronic properties of the Si/SiO2 interface from first principles

Prediction of sub-pyramid texturing as the next step towards high efficiency silicon heterojunction solar cells

The interfacial morphology of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) is a key success factor to approach the theoretical efficiency of Si-based solar cells, especially Si heterojunction technology. The unexpected crystalline silicon epitaxial growth and interfacial nanotwins formation remain a challenging issue for silicon heterojunction technology. Here, we design a hybrid interface by tuning pyramid apex-angle to improve c-Si/a-Si:H interfacial morphology in silicon solar cells. The pyramid apex-angle (slightly smaller than 70.53°) consists of hybrid (111)_0.9/(011)_0.1 c-Si planes, rather than pure (111) planes in conventional texture pyramid. Employing microsecond-long low-temperature (500 K) molecular dynamic simulations, the hybrid (111)/(011) plane prevents from both c-Si epitaxial growth and nanotwin formation. More importantly, given there is not any additional industrial preparation process, the hybrid c-Si plane could improve c-Si/a-Si:H interfacial morphology for a-Si passivated contacts technique, and wide-applied for all silicon-based solar cells as well.

Two-Dimensional Ultrathin Silica Films

Two-dimensional (2D) ultrathin silica films have the potential to reach technological importance in electronics and catalysis. Several well-defined 2D-silica structures have been synthesized so far. The silica bilayer represents a 2D material with SiO₂ stoichiometry. It consists of precisely two layers of tetrahedral [SiO₄] building blocks, corner connected via oxygen bridges, thus forming a self-saturated silicon dioxide sheet with a thickness of ∼0.5 nm. Inspired by recent successful preparations and characterizations of these 2D-silica model systems, scientists now can forge novel concepts for realistic systems, particularly by atomic-scale studies with the most powerful and advanced surface science techniques and density functional theory calculations. This Review provides a solid introduction to these recent developments, breakthroughs, and implications on ultrathin 2D-silica films, including their atomic/electronic structures, chemical modifications, atom/molecule adsorptions, and catalytic reactivity properties, which can help to stimulate further investigations and understandings of these fundamentally important 2D materials.

The Damage Threshold of Multilayer Film Induced by Femtosecond and Picosecond Laser Pulses

Laser-induced damage threshold (LIDT) is an essential factor in measuring the anti-laser damage of optical films. The damage threshold and morphology of the Ta2O5/SiO2 multilayer film prepared by electron beam evaporation were studied by femtosecond (50 fs) and picosecond (30 ps) laser irradiations. The results showed that the LIDT of the film was 1.7 J·cm−2 under the femtosecond laser. The damage morphology developed from surface damage to a clear layered structure, and the outline has become more transparent and regular with an increase in the laser fluence. Under the picosecond laser irradiation, the LIDT of the film was 2.0 J·cm−2. The damage morphology developed from small range to thin film layer separation, and the outline changed from blurry to clear with an increase in laser fluence. Therefore, the LIDT of the film decreased with a decrease in the laser pulse width.

Nanoscale Anatomy of Iron-Silica Self-Organized Membranes: Implications for Prebiotic Chemistry

Iron-silica self-organized membranes, so-called chemical gardens, behave as fuel cells and catalyze the formation of amino/carboxylic acids and RNA nucleobases from organics that were available on early Earth. Despite their relevance for prebiotic chemistry, little is known about their structure and mineralogy at the nanoscale. Studied here are focused ion beam milled sections of iron-silica membranes, grown from synthetic and natural, alkaline, serpentinization-derived fluids thought to be widespread on early Earth. Electron microscopy shows they comprise amorphous silica and iron nanoparticles of large surface areas and inter/intraparticle porosities. Their construction resembles that of a heterogeneous catalyst, but they can also exhibit a bilayer structure. Surface-area measurements suggest that membranes grown from natural waters have even higher catalytic potential. Considering their geochemically plausible precipitation in the early hydrothermal systems where abiotic organics were produced, iron-silica membranes might have assisted the generation and organization of the first biologically relevant organics.

Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions

As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interconnects and dielectrics has not been addressed from first principles yet. Here, using first-principles calculations based on density functional theory and nonequilibrium Green's function formalism, we investigate the interfacial-dependent leakage currents in the Cu/α-cristobalite/Cu junctions. Our results show that the oxygen-rich interfaces form the lowest-leakage-current junction under small bias voltages, followed by the silicon-rich and oxygen-poor ones. This feature is attributed to their transmission spectra, related to their density of states and charge distributions. However, the oxygen-poor interfacial junction may conversely have a better dielectric strength than others, as its transmission gap, from -2.8 to 3.5 eV, is more symmetry respect to the Fermi level than others.

High-k polymeric gate insulators for organic field-effect transistors

Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented.

Measurement of vibrational modes in single SiO2 nanoparticles using a tunable metal resonator with optical subwavelength dimensions

Using a tunable optical subwavelength microcavity, we demonstrate controlled modification of the vibronic relaxation dynamics in a single SiO(2) nanoparticle. By varying the distance between the cavity mirrors we change the electromagnetic field mode structure around a single nanoparticle and the radiative transition probability from the lowest vibronic level of the electronically excited state to the progression of phonon levels in the electronic ground state. We demonstrate redistribution of the photoluminescence spectrum between zero-phonon and phonon-assisted bands and modification of the excited state lifetime of the same individual SiO(2) particle measured at different cavity lengths. By comparing the experimental data with a theoretical model, we extract the quantum yield of a single SiO(2) nanoparticle.

Direct imaging of a two-dimensional silica glass on graphene

Large-area graphene substrates provide a promising lab bench for synthesizing, manipulating, and characterizing low-dimensional materials, opening the door to high-resolution analyses of novel structures, such as two-dimensional (2D) glasses, that cannot be exfoliated and may not occur naturally. Here, we report the accidental discovery of a 2D silica glass supported on graphene. The 2D nature of this material enables the first atomic resolution transmission electron microscopy of a glass, producing images that strikingly resemble Zachariasen's original 1932 cartoon models of 2D continuous random network glasses. Atomic-resolution electron spectroscopy identifies the glass as SiO(2) formed from a bilayer of (SiO(4))(2-) tetrahedra and without detectable covalent bonding to the graphene. From these images, we directly obtain ring statistics and pair distribution functions that span short-, medium-, and long-range order. Ab initio calculations indicate that van der Waals interactions with graphene energetically stabilizes the 2D structure with respect to bulk SiO(2). These results demonstrate a new class of 2D glasses that can be applied in layered graphene devices and studied at the atomic scale.

Enhanced silicon oxidation on titanium-covered Si(001)

We report on a core level photoemission study of the formation of an ultrathin SiO(x) layer grown at the interface of a titanium-covered Si(001) surface. Oxygen exposure at room temperature induces a large chemical shift of the Si 2p state, predominantly assigned to Si(4+). The results indicate that a SiO(2 - δ) layer, close to the stoichiometry of SiO(2), is formed below the TiO(x) film. The thickness of the SiO(2 - δ) layer is estimated to be ∼ 0.9 nm, corresponding to three to four oxide layers. Further chemical shift caused by annealing is attributed to the formation of titanium silicate (TiSi(x)O(y)).

Point atomic multipole moments for simulation of electrostatic potential and field in all-siliceous zeolites

Calibration method of atomic multipole moments (AMMs) is presented with respect to geometries of all-siliceous zeolite models obtained with X-ray diffraction (XRD) methods. Mulliken atomic charges and AMMs are calculated for all-siliceous types possessing small size elementary unit cells at the hybrid density functional theory (DFT) (B3LYP) and general gradient approximation (GGA) Perdew-Burke-Ernzerhof (PBE) levels and then used to fit the dependences versus geometry variables for the Mulliken charges and versus special coordinate for the AMMs. Fitted and exact charges and AMMs are used to compute electrostatic potential (EP) and electric field (EF) for all-siliceous zeolites with CRYSTAL. A possibility of application of the point AMMs to quantum mechanical/molecular mechanics computations or classic simulation of physical adsorption is evaluated. The considered models expand over wide range of structural parameters and could be applied even to amorphous all-siliceous systems.

Nanoscale control of silica particle formation via silk-silica fusion proteins for bone regeneration

The biomimetic design of silk/silica fusion proteins was carried out, combining the self assembling domains of spider dragline silk (Nephila clavipes) and silaffin derived R5 peptide of Cylindrotheca fusiformis that is responsible for silica mineralization. Genetic engineering was used to generate the protein-based biomaterials incorporating the physical properties of both components. With genetic control over the nanodomain sizes and chemistry, as well as modification of synthetic conditions for silica formation, controlled mineralized silk films with different silica morphologies and distributions were successfully generated; generating 3D porous networks, clustered silica nanoparticles (SNPs), or single SNPs. Silk serves as the organic scaffolding to control the material stability and multiprocessing makes silk/silica biomaterials suitable for different tissue regenerative applications. The influence of these new silk-silica composite systems on osteogenesis was evaluated with human mesenchymal stem cells (hMSCs) subjected to osteogenic differentiation. hMSCs adhered, proliferated, and differentiated towards osteogenic lineages on the silk/silica films. The presence of the silica in the silk films influenced osteogenic gene expression, with the upregulation of alkaline phosphatase (ALP), bone sialoprotein (BSP), and collagen type 1 (Col 1) markers. Evidence for early bone formation as calcium deposits was observed on silk films with silica. These results indicate the potential utility of these new silk/silica systems towards bone regeneration.

Structure and bonding at the atomic scale by scanning transmission electron microscopy

A new generation of electron microscopes is able to explore the microscopic properties of materials and devices as diverse as transistors, turbine blades and interfacial superconductors. All of these systems are made up of dissimilar materials that, where they join at the atomic scale, display very different behaviour from what might be expected of the bulk materials. Advances in electron optics have enabled the imaging and spectroscopy of these buried interface states and other nanostructures with atomic resolution. Here I review the capabilities, prospects and ultimate limits for the measurement of physical and electronic properties of nanoscale structures with these new microscopes.

Experimental and theoretical improvements on understanding of the O K-edge of TeO2

Using an electron monochromator attached to an electron microscope, high energy-resolution electron energy-loss spectra collected from TeO2 have revealed new features in the Oxygen K-edge. Using density-functional theory in the local density and the generalized gradient approximation, we find that core-hole strength of 1.3 gives an excellent fit to our high-resolution experimental data. This indicates that screening is not weak in this oxide, as normally assumed, and that neither the ground state nor a full core-hole model is adequate in quantitative reproduction of the O K-edge in the TeO2 system.

Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

Absolute and approximate calculations of electron-energy-loss spectroscopy edge thresholds

Systematic studies of binding energies for the electron excitation of core levels for atoms, molecules, and solids have been calculated with various density functional theories. The generalized gradient approximation provides the most accurate description of the absolute binding energies when spin polarization is included. Relative core level shifts can be determined to within 0.5 eV without spin polarization. Core level shifts can be predicted from ground-state eigenvalue differences only when comparing environments of similar electronegativity. Such is the case for the O K edge, but not the Si L edge at Si/SiO(2) interfaces in nanotransistors.

Ultrathin aluminum oxide tunnel barriers

Ballistic electron emission microscopy is used to study the formation of ultrathin tunnel barriers by the oxidization of aluminum. An O2 exposure, approximately 30 mTorr sec, forms a uniform tunnel barrier with a barrier height straight phi(b) of 1.2 eV. Greater O2 exposure does not alter straight phi(b) or the ballistic transmissivity of the oxide conduction band. Tunneling spectroscopy indicates a broad energy distribution of electronic states in the oxide. With increasing O2 dose the states below 1.2 eV gradually become localized, but until this localization is complete these states can provide low-energy single-electron channels through the oxide.

Core-hole effects on energy-loss near-edge structure

We present first-principles electron energy-loss near-edge structure calculations that incorporate electron-hole interactions and are in excellent agreement with experimental data obtained with X-ray absorption spectroscopy (XAS) and electron energy-loss spectroscopy (EELS). The superior energy resolution in XAS spectra and the new calculations make a compelling case that core-hole effects dominate core-excitation edges of the materials investigated: Si, SiO2, MgO, and SiC. These materials differ widely in the dielectric constant leading to the conclusion that core-hole effects dominate all core-electron excitation spectra in semiconductors and insulators. The implications of the importance of core-holes for simulations of core-electron excitation spectra at interfaces will be discussed.