Light-induced gaps in semiconductor band-to-band transitions

Modeling of surface-induced second-harmonic generation from multilayer structures by the transfer matrix method

We analytically and numerically investigate surface second-harmonic generation (SHG) from a stack of dielectric layers. We develop a theoretical formalism based on the transfer matrix method for the calculation of the surface-driven second-harmonic radiation from multilayer structures and elaborate it for the case of ultrathin dielectric layers using a power series expansion to derive the effective surface nonlinear tensor for the whole stack. We show that for deeply subwavelength thicknesses of the layers the surface responses from all interfaces can efficiently sum up, leading to largely enhanced efficiency of SHG. As a result, such surface-driven nonlinearity can become comparable to the bulk nonlinearity in noncentrosymmetric semiconductors and can yield high performance for nonlinear nanophotonic applications.

On the possibility of a terahertz light emitting diode based on a dressed quantum well

We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.

Control of the nonlinear response of bulk GaAs induced by long-wavelength infrared pulses

The nonlinear optical response of GaAs is studied using extremely nonresonant 10 μm laser pulses with peak intensities greater than 2 GW/cm ². We observe over an order of magnitude enhancement in the four-wave mixing efficiency by decreasing the CO ₂ laser beat-wave frequency. This enhancement is attributed to currents of photoexcited unbound carriers modulated at the beat frequency, confirmed by measurements of nonlinear absorption at this long wavelength as well as a fully microscopic analysis of the excitation dynamics. Modeling of such nonperturbative semiconductor-laser interactions predicts that further decreasing the beat frequency can increase the nonlinear response and allow for its control over two orders of magnitude.

Electric dipole oscillation in solids characterized by Fourier transform extreme ultraviolet attosecond spectroscopy

We characterized electronic dipole oscillations in chromium doped sapphire (Cr:Al2O3) using Fourier transform extreme ultraviolet attosecond spectroscopy (FTXUV) combined with an isolated attosecond pulse, which reveals the electric band-structure and dephasing process in solids.

Multi-petahertz electron interference in Cr:Al2O3 solid-state material

Lightwave-field-induced ultrafast electric dipole oscillation is promising for realizing petahertz (10¹⁵ Hz: PHz) signal processing in the future. In building the ultrahigh-clock-rate logic operation system, one of the major challenges will be petahertz electron manipulation accompanied with multiple frequencies. Here we study multi-petahertz interference with electronic dipole oscillations in alumina with chromium dopant (Cr:Al₂O₃). An intense near-infrared lightwave-field induces multiple electric inter-band polarizations, which are characterized by Fourier transform extreme ultraviolet attosecond spectroscopy. The interference results from the superposition state of periodic dipole oscillations of 667 to 383 attosecond (frequency of 1.5 to 2.6 PHz) measured by direct time-dependent spectroscopy and consists of various modulations on attosecond time scale through individual electron dephasing times of the Cr donor-like and Al₂O₃ conduction band states. The results indicate the possible manipulation of petahertz interference signal with multiple dipole oscillations using material band engineering and such a control will contribute to the study of ultrahigh-speed signal operation.

Signal processing in electronic devices is in the THz regime. Here the authors measure NIR lightwave-field-induced multiple dipole oscillations in Cr:Al₂O₃ in the time domain reaching PHz scale by using an isolated attosecond pulse and this method shows potential for higher speed signal processing.

Lightwave-driven quasiparticle collisions on a subcycle timescale

Ever since Ernest Rutherford scattered α-particles from gold foils, collision experiments have revealed insights into atoms, nuclei and elementary particles. In solids, many-body correlations lead to characteristic resonances--called quasiparticles--such as excitons, dropletons, polarons and Cooper pairs. The structure and dynamics of quasiparticles are important because they define macroscopic phenomena such as Mott insulating states, spontaneous spin- and charge-order, and high-temperature superconductivity. However, the extremely short lifetimes of these entities make practical implementations of a suitable collider challenging. Here we exploit lightwave-driven charge transport, the foundation of attosecond science, to explore ultrafast quasiparticle collisions directly in the time domain: a femtosecond optical pulse creates excitonic electron-hole pairs in the layered dichalcogenide tungsten diselenide while a strong terahertz field accelerates and collides the electrons with the holes. The underlying dynamics of the wave packets, including collision, pair annihilation, quantum interference and dephasing, are detected as light emission in high-order spectral sidebands of the optical excitation. A full quantum theory explains our observations microscopically. This approach enables collision experiments with various complex quasiparticles and suggests a promising new way of generating sub-femtosecond pulses.

Strong-Field Resonant Dynamics in Semiconductors

We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.

Control of electronic transport in graphene by electromagnetic dressing

We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field. Namely, linear polarization results in an anisotropic gapless energy spectrum, whereas circular polarization leads to an isotropic gapped one. As a consequence, the stationary (dc) electronic transport in graphene strongly depends on parameters of the dressing field: A circularly polarized field monotonically decreases the isotropic conductivity of graphene, whereas a linearly polarized one results in both giant anisotropy of conductivity (which can reach thousands of percents) and the oscillating behavior of the conductivity as a function of the field intensity. Since the predicted phenomena can be observed in a graphene layer irradiated by a monochromatic electromagnetic wave, the elaborated theory opens a substantially new way to control electronic properties of graphene with light.

Linking high harmonics from gases and solids

When intense light interacts with an atomic gas, recollision between an ionizing electron and its parent ion creates high-order harmonics of the fundamental laser frequency. This sub-cycle effect generates coherent soft X-rays and attosecond pulses, and provides a means to image molecular orbitals. Recently, high harmonics have been generated from bulk crystals, but what mechanism dominates the emission remains uncertain. To resolve this issue, we adapt measurement methods from gas-phase research to solid zinc oxide driven by mid-infrared laser fields of 0.25 volts per ångström. We find that when we alter the generation process with a second-harmonic beam, the modified harmonic spectrum bears the signature of a generalized recollision between an electron and its associated hole. In addition, we find that solid-state high harmonics are perturbed by fields so weak that they are present in conventional electronic circuits, thus opening a route to integrate electronics with attosecond and high-harmonic technology. Future experiments will permit the band structure of a solid to be tomographically reconstructed.

Observation of Floquet-Bloch states on the surface of a topological insulator

The unique electronic properties of the surface electrons in a topological insulator are protected by time-reversal symmetry. Circularly polarized light naturally breaks time-reversal symmetry, which may lead to an exotic surface quantum Hall state. Using time- and angle-resolved photoemission spectroscopy, we show that an intense ultrashort midinfrared pulse with energy below the bulk band gap hybridizes with the surface Dirac fermions of a topological insulator to form Floquet-Bloch bands. These photon-dressed surface bands exhibit polarization-dependent band gaps at avoided crossings. Circularly polarized photons induce an additional gap at the Dirac point, which is a signature of broken time-reversal symmetry on the surface. These observations establish the Floquet-Bloch bands in solids and pave the way for optical manipulation of topological quantum states of matter.

Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells

The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to 10  kV/cm resulting in a Rabi energy of ≈0.6 times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model.

Reversal of coherently controlled ultrafast photocurrents by band mixing in undoped GaAs quantum wells

It is demonstrated that valence-band mixing in GaAs quantum wells tremendously modifies electronic transport. A coherent control scheme in which ultrafast currents are optically injected into undoped GaAs quantum wells upon excitation with femtosecond laser pulses is employed. An oscillatory dependence of the injection current amplitude and direction on the excitation photon energy is observed. A microscopic theoretical analysis shows that this current reversal is caused by the coupling of the light- and heavy-hole bands and that the hole currents dominate the overall current response. These surprising consequences of band mixing illuminate fundamental physics as they are unique for experiments which are able to monitor electronic transport resulting from carriers with relatively large momenta.

Observation of broadband time-dependent Rabi shifting in microplasmas

Coherent broadband radiation in the form of Rabi sidebands is observed when a ps probe laser propagates through a weakly ionized, electronically excited microplasma generated in the focus of an intense pump beam. The sidebands arise from the interaction of the probe beam with pairs of excited states of a constituent neutral atom via the probe-induced Rabi oscillation. Sideband shifting of >90 meV from the probe carrier frequency results in an effective bandwidth of 200 meV. The sidebands are controlled by the intensity and temporal profile of the probe pulse; with amplitude and shift in agreement with the predictions of a time-dependent generalized Rabi cycling model.

Carrier-envelope-offset phase control of ultrafast optical rectification in resonantly excited semiconductors

Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film GaAs. We subsequently suggest a possible technique to extract the CEP, in both sign and amplitude, using a solid state detector.

Magnetic-field-induced second-harmonic generation in semiconductor GaAs

We show that application of a magnetic field induces optical second-harmonic generation (SHG) in GaAs. This phenomenon arises from field-induced symmetry breaking causing new optical nonlinearities. A series of narrow SHG lines is observed in the spectral range from 1.52 to 1.77 eV that we attribute to Landau-level quantization of the band energy spectrum. The rotational anisotropy of the SHG signal distinctly differs from that of the electric-dipole approximation. Model calculations reveal that nonlinear magneto-optical spatial dispersion that comes together with the electric-dipole term is the dominant mechanism for this nonlinearity.

Carrier-wave Rabi flopping: role of the carrier-envelope phase

Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.