Band structure and oscillatory electron-phonon coupling of Pb thin films determined by atomic-layer-resolved quantum-well states

Quasi-Homoepitaxial Growth of Highly Strained Alkali-Metal Ultrathin Films on Kagome Superconductors

Applying lattice strain to thin films, a critical factor to tailor their properties such as stabilizing a structural phase unstable at ambient pressure, generally necessitates heteroepitaxial growth to control the lattice mismatch with substrate. Therefore, while homoepitaxy, the growth of thin film on a substrate made of the same material, is a useful method to fabricate high-quality thin films, its application to studying strain-induced structural phases is limited. Contrary to this general belief, here the quasi-homoepitaxial growth of Cs and Rb thin films is reported with substantial in-plane compressive strain. This is achieved by utilizing the alkali-metal layer existing in bulk crystal of kagome metals AV3Sb5 (A = Cs and Rb) as a structural template. The angle-resolved photoemission spectroscopy measurements reveal the formation of metallic quantum well states and notable thickness-dependent quasiparticle lifetime. Comparison with density functional theory calculations suggests that the obtained thin films crystalize in the face-centered cubic structure, which is typically stable only under high pressure in bulk crystals. These findings provide a useful approach for synthesizing highly strained thin films by quasi-homoepitaxy, and pave the way for investigating many-body interactions in Fermi liquids with tunable dimensionality.

Oscillation of Electronic-Band-Gap Size Induced by Crystalline Symmetry Change in Ultrathin PbTe Films

For the semiconductors of atomic length scales, even one atom layer difference could modify crystal symmetry and lead to a significant change in electronic structure, which is essential for modern electronics. However, the experimental exploration of such effect has not been achieved due to challenges in sample fabrication and characterization with atomic-scale precision. Here, we report the discovery of crystal symmetry alternation induced band-gap oscillation in atomically thin PbTe films by scanning tunneling microscopy. As the thickness of PbTe films is reduced from an 18- to 2-atomic layer, the band-gap size not only expands from 0.19 eV to 1.06 eV by 5.6 fold, but also exhibits an even-odd-layer oscillation, which is attributed to the alternating crystal symmetries between P4/mmm and P4/nmm. Our work sheds new light on electronic structure engineering of semiconductors at atomic scale for next-generation nanoelectronics.

Giant Periodic Pseudomagnetic Fields in Strained Kagome Magnet FeSn Epitaxial Films on SrTiO3(111) Substrate

Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudomagnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn₂ honeycomb (stanene) and Fe₃Sn kagome layers, on SrTiO₃(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for a film thickness below 10 nm, resulting in differential conductance peaks consistent with Landau levels generated by a pseudomagnetic field greater than 1000 T. Our findings demonstrate the feasibility of strain engineering the electronic properties of topological magnets at the nanoscale.

Equally Spaced Quantum States in van der Waals Epitaxy-Grown Nanoislands

Pursuing the confinement of linearly dispersive relativistic Fermions is of interest in both fundamental physics and potential applications. Here, we report strong STM evidence for the equally spaced, strikingly sharp, and densely distributed quantum well states (QWSs) near Fermi energy in Pb(111) nanoislands, van der Waals epitaxially grown on graphitized 6H-SiC(0001). The observations can be explained as the quantized energies of confined linearly dispersive [111] electrons, which essentially "simulate" the out-of-plane relativistic quasiparticles. The equally spaced QWSs with an origin of confined relativistic electrons are supported by phenomenological simulations and Fabry-Pérot fittings based on the relativistic Fermions. First-principles calculations further reveal that the spin-orbit coupling strengthens the relativistic nature of electrons near Fermi energy. Our finding uncovers the unique equally spaced quantum states in electronic systems beyond Landau levels and may inspire future studies on confined relativistic quasiparticles in flourishing topological materials and applications in structurally simpler quantum cascade laser.

Measuring the Electron–Phonon Interaction in Two-Dimensional Superconductors with He-Atom Scattering

Helium-atom scattering (HAS) spectroscopy from conducting surfaces has been shown to provide direct information on the electron–phonon interaction, more specifically the mass-enhancement factor λ from the temperature dependence of the Debye–Waller exponent, and the mode-selected electron–phonon coupling constants λQν from the inelastic HAS intensities from individual surface phonons. The recent applications of the method to superconducting ultra-thin films, quasi-1D high-index surfaces, and layered transition-metal and topological pnictogen chalcogenides are briefly reviewed.

Film Thickness of Pb Islands on the Si(111) Surface

We analyze topographic scanning force microscopy images together with Kelvin probe images obtained on Pb islands and on the wetting layer on Si(111) for variable annealing times. Within the wetting layer we observe negatively charged Si-rich areas. We show evidence that these Si-rich areas result from islands that have disappeared by coarsening. We argue that the islands are located on Si-rich areas inside the wetting layer such that the Pb/Si interface of the islands is in line with the top of the wetting layer rather than with its interface to the substrate. We propose that the Pb island heights are one atomic layer smaller than previously believed. For the quantum size effect bilayer oscillations of the work function observed in this system, we conclude that for film thicknesses below 9 atomic layers large values of the work function correspond to even numbers of monolayers instead of odd ones. The atomically precise island height is important to understand ultrafast "explosive" island growth in this system.

Conversion of a conventional superconductor into a topological superconductor by topological proximity effect

Realization of topological superconductors (TSCs) hosting Majorana fermions is a central challenge in condensed-matter physics. One approach is to use the superconducting proximity effect (SPE) in heterostructures, where a topological insulator contacted with a superconductor hosts an effective p-wave pairing by the penetration of Cooper pairs across the interface. However, this approach suffers a difficulty in accessing the topological interface buried deep beneath the surface. Here, we propose an alternative approach to realize topological superconductivity without SPE. In a Pb(111) thin film grown on TlBiSe₂, we discover that the Dirac-cone state of substrate TlBiSe₂ migrates to the top surface of Pb film and obtains an energy gap below the superconducting transition temperature of Pb. This suggests that a Bardeen-Cooper-Schrieffer superconductor is converted into a TSC by the topological proximity effect. Our discovery opens a route to manipulate topological superconducting properties of materials.

Realizing topological superconductivity is essential for applicable fault-tolerant quantum computation. Here, Trang et al. report migration of Dirac-cone from TlBiSe₂ substrate to top surface of superconducting Pb film due to topological proximity effect, suggesting realization of topological superconductivity.

Electron-Phonon Coupling Constant of Metallic Overlayers from Specular He Atom Scattering

He atom scattering has been shown to be a sensitive probe of electron-phonon interaction properties at surfaces. Here it is shown that measurements of the thermal attenuation of the specular He atom diffraction peak (the Debye-Waller effect) can determine the electron-phonon coupling constant, λ, for ultrathin films of metal overlayers on various close-packed metal substrates. Values of λ obtained for single and multiple monolayers of alkali metals, and for Pb layers on Cu(111), extrapolated to large thicknesses, agree favorably with known bulk values. This demonstrates that He atom scattering can measure the electron-phonon coupling strength as a function of film thickness on a layer-by-layer basis.

Formation of Surface and Quantum-Well States in Ultra Thin Pt Films on the Au(111) Surface

The electronic structure of the Pt/Au(111) heterostructures with a number of Pt monolayers n ranging from one to three is studied in the density-functional-theory framework. The calculations demonstrate that the deposition of the Pt atomic thin films on gold substrate results in strong modifications of the electronic structure at the surface. In particular, the Au(111) s-p-type Shockley surface state becomes completely unoccupied at deposition of any number of Pt monolayers. The Pt adlayer generates numerous quantum-well states in various energy gaps of Au(111) with strong spatial confinement at the surface. As a result, strong enhancement in the local density of state at the surface Pt atomic layer in comparison with clean Pt surface is obtained. The excess in the density of states has maximal magnitude in the case of one monolayer Pt adlayer and gradually reduces with increasing number of Pt atomic layers. The spin-orbit coupling produces strong modification of the energy dispersion of the electronic states generated by the Pt adlayer and gives rise to certain quantum states with a characteristic Dirac-cone shape.

Cryogenic Fab-on-a-Chip Sticks the Landing

Using a microelectromechanical systems (MEMS)-based Fab-on-a-Chip, we quench-condense lead thin-films. Suppressing the formation of lead islands makes it possible to grow a homogeneous and continuous film as thin as 2 nm, without the use of an adhesion layer. Thermal cycling from 3 K to as low as 10 K reveals irreversible annealing of the thin-film characteristic of a metastable state. The transition to the stable state is smooth and is completed by cycling the temperature above ∼42 K, where a distinctive resistance minimum is observed. This resistive minimum is accompanied by an unexpected peak in the superconducting transition temperature. After further thermal cycling, the standard metallic/superconductive behavior is established. The MEMS-based approach yields a platform for systematic studies of quench-condensed thin-film materials, making an intriguing parameter space of mesoscopic physics experimentally accessible.

Observation of enhanced superconductivity in the vicinity of Ar-induced nano-cavities in Pb(111)

Local variations of superconductivity have been studied using scanning tunneling microscopy around nano-cavities formed by Ar ions embedded in Pb(111). Various factors including the density of states at Fermi energy, electron–phonon couplings, and quantum well states, which are known to affect superconductivity, have been examined. We show that the superconductivity is enhanced near the nano-cavities and propose that quantum effects such as quantum confinement, proximity effect and multi-gap effect are possibly involved in determining the superconducting gap of this system. These results have important implications for the characterization and understanding of superconductivity at a nanometer scale.

Near-equilibrium measurement of quantum size effects using Kelvin probe force microscopy

In nano-structures such as thin films electron confinement results in the quantization of energy levels in the direction perpendicular to the film. The discretization of the energy levels leads to the oscillatory dependence of many properties on the film thickness due to quantum size effects. Pb on Si(111) is a specially interesting system because a particular relationship between the Pb atomic layer thickness and its Fermi wavelength leads to a periodicity of the oscillation of two atomic layers. Here, we demonstrate how the combination of scanning force microscopy (SFM) and Kelvin probe force microscopy (KPFM) provides a reliable method to monitor the quantum oscillations in the work function of Pb ultra-thin film nano-structures on Si(111). Unlike other techniques, with SFM/KPFM we directly address single Pb islands, determine their height while suppressing the influence of electrostatic forces, and, in addition, simultaneously evaluate their local work function by measurements close to equilibrium, without current-dependent and non-equilibrium effects. Our results evidence even-odd oscillations in the work function as a function of the film thickness that decay linearly with the film thickness, proving that this method provides direct and precise information on the quantum states.

Dimensionality and Valency Dependent Quantum Growth of Metallic Nanostructures: A Unified Perspective

Quantum growth refers to the phenomena in which the quantum mechanically confined motion of electrons in metallic wires, islands, and films determines their overall structural stability as well as their physical and chemical properties. Yet to date, there has been a lack of a unified understanding of quantum growth with respect to the dimensionality of the nanostructures as well as the valency of the constituent atoms. Based on a first-principles approach, we investigate the stability of nanowires, nanoislands, and ultrathin films of prototypical metal elements. We reveal that the Friedel oscillations generated at the edges (or surfaces) of the nanostructures cause corresponding oscillatory behaviors in their stability, leading to the existence of highly preferred lengths (or thicknesses). Such magic lengths of the nanowires are further found to depend on both the number of valence electrons and the radial size, with the oscillation period monotonously increasing for alkali and group IB metals, and monotonously decreasing for transition and group IIIA-VA metals. When the radial size of the nanowires increases to reach ∼10 Å, the systems equivalently become nanosize islands, and the oscillation period saturates to that of the corresponding ultrathin films. These findings offer a generic perspective of quantum growth of different classes of metallic nanostructures.

Electron-Phonon Coupling Strength at Metal Surfaces Directly Determined from the Helium Atom Scattering Debye-Waller Factor

A new quantum-theoretical derivation of the elastic and inelastic scattering probability of He atoms from a metal surface, where the energy and momentum exchange with the phonon gas can occur only through the mediation of the surface free-electron density, shows that the Debye-Waller exponent is directly proportional to the electron-phonon mass coupling constant λ. The comparison between the values of λ extracted from existing data on the Debye-Waller factor for various metal surfaces and the λ values known from literature indicates a substantial agreement, which opens the possibility of directly extracting the electron-phonon coupling strength in quasi-2D conducting systems from the temperature or incident energy dependence of the elastic helium atom scattering intensities.

Local measurement of the Eliashberg function of Pb islands: enhancement of electron-phonon coupling by quantum well states

Inelastic tunneling spectroscopy of Pb islands on Cu(111) obtained by scanning tunneling microscopy below 1 K provides a direct access to the local Eliashberg function of the islands with high energy resolution. The Eliashberg function describes the electron-phonon interaction causing conventional superconductivity. The measured Eliashberg function strongly depends on the local thickness of the Pb nanostructures and shows a sharp maximum when quantum well states of the Pb islands come close to the Fermi energy. Ab initio calculations reveal that this is related to enhanced electron-phonon coupling at these thicknesses.

Quantum size effect on the paramagnetic critical field in free-standing superconducting nanofilms

The quantum size effect on the in-plane paramagnetic critical field in Pb(1 1 1) free-standing nanofilms is investigated with the use of the spin-generalized Bogoliubov-de Gennes equations. It is shown that the critical field oscillates as a function of the nanofilm thickness with the period ∼ 2 ML (even-odd oscillations), modulated by the beating effect. The calculated values of the critical field for different nanofilm thicknesses are analyzed in the context of the Clogston-Chandrasekhar limit. It is found that the critical field for superconducting nanofilms differs from this limit. This phenomena is explained in terms of quantization of the electron energy caused by the confinement of electron motion in a direction perpendicular to the film. The thermal effect and thickness-dependence of electron-phonon coupling on the value of the critical magnetic field are also studied.

Electron-phonon coupling in quantum-well states of the Pb/Si(1 1 1) system

The electron-phonon coupling parameters in the vicinity of the Γ point, λ(Γ), for electronic quantum well states in epitaxial lead films on a Si(1 1 1) substrate are measured using 5, 7 and 12 ML films and femtosecond laser photoemission spectroscopy. The λ (Γ) values in the range of 0.6-0.9 were obtained by temperature-dependent line width analysis of occupied quantum well states and found to be considerably smaller than the momentum averaged electron-phonon coupling at the Fermi level of bulk lead, (λ = 1.1-1.7). The results are compared to density functional theory calculations of the lead films with and without interfacial stress. It is shown that the discrepancy can not be explained by means of confinement effects or simple structural modifications of the Pb films and, thus, is attributed to the influence of the substrate on the Pb electronic and vibrational structures.

Surface lattice dynamics and electron-phonon interaction in ultrathin Bi(111) film

The surface phonon and electron-phonon interactions in the two-dimensional topological insulator Bi(111) film are calculated, including the spin-orbit coupling from density-functional perturbation theory. By analyzing the zone-center phonons, an anomalous phonon hardening of two Raman modes, Eg and A1g, in ultrathin films is found and is explained by considering the redistribution of the charge density on the surface of the semimetallic Bi. Surface phonon band structures and the surface phonon density of states are given, and we find that softening and hardening of surface phonon modes occur simultaneously in ultrathin Bi film, but the softening may dominate over the hardening. The calculated electron-phonon coupling constant λ for Bi(111) film is much larger than that for the bulk, which might induce surface-localized superconductivity in this two-dimensional topological insulator.

Imaging the electron-phonon interaction at the atomic scale

Thin Pb films epitaxially grown on 7×7 reconstructed Si(111) represent an ideal model system for studying the electron-phonon interaction at the metal-insulator interface. For this system, using a combination of scanning tunneling microscopy and inelastic electron tunneling spectroscopy, we performed direct real-space imaging of the electron-phonon coupling parameter. We found that λ increases when the electron scattering at the Pb/Si(111) interface is diffuse and decreases when the electron scattering is specular. We show that the effect is driven by transverse redistribution of the electron density inside a quantum well.

Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion

We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 μm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.

Fabrication of graphene with CuO islands by chemical vapor deposition

Graphene prepared on Cu foil by chemical vapor deposition was studied as a function of post growth cooling conditions. CuO islands embedded in the graphene film were discovered and studied by scanning electron microscopy, atomic force microscopy, and X-ray photoemission spectroscopy. It is shown that nanostructured holes can be formed within a graphene film by reduction using hydrogen cooling immediately after film growth. We also observe the formation of symmetrical oxide islands in these holes. This study provides an easy way to fabricate a graphene + CuO composite, and the method may be extended to other graphene based structures.

Interface effects on the quantum well states of Pb thin films

Using scanning tunneling spectroscopy, we have studied the interface effect on quantum well states of Pb thin films grown on various metal-terminated (Pb, Ag, and Au) n-type Si(111) surfaces and on two different p-type Si(111) surfaces. The dispersion relation E(k) of the electrons of the Pb film and the phase shift at the substrate interface were determined by applying the quantization rule to the measured energy positions of the quantum well states. Characteristic features in the phase shift versus energy curves were identified and were correlated to the directional conduction band of the silicon substrate and to the Schottky barrier formed between the metal film and the semiconductor. A model involving the band structure of the substrate, the Schottky barrier, and the effective thickness of the interface was introduced to qualitatively but comprehensively explain all the observed features of the phase shift at the substrate interface. Our physical understanding of the phase shift is critically important for using interface modification to control the quantum well states.

Electronic structure and trilayer growth of indium films on Si(111): a photoemission study

We report on the preferred trilayer growth of indium films on Si(111) studied by angle-resolved photoemission spectroscopy. By employing an interfactant and optimized annealing conditions, the kinetic constraint on the In atoms due to the substrate is greatly reduced and 'electronic growth'-where film morphology is controlled by the quantized electronic structure of the film-can be achieved at low coverage. Our photoemission spectra reveal that films of 4 ML (monolayers) and 7 ML thicknesses are energetically favored due to a lower surface energy, as confirmed by theoretical calculations. A detailed comparison of the photoemission spectra between In films grown on the In-√3 × √3/Si(111) surface and those on the Si(111) 7 × 7 surface shows that the √3 × √3 interfactant is a better template for growing In films at low coverage and effectively reduces the electronic coupling between the film and the substrate. In addition, the observed band structures of In films are in reasonable agreement with first-principles calculations and suggest that In films grown on the √3 × √3 interfactant might already be close to the bulk-like body-centered tetragonal structure at around 10 ML.

Observation of shell effects in superconducting nanoparticles of Sn

In a zero-dimensional superconductor, quantum size effects (QSE) not only set the limit to superconductivity, but are also at the heart of new phenomena such as shell effects, which have been predicted to result in large enhancements of the superconducting energy gap. Here, we experimentally demonstrate these QSE through measurements on single, isolated Pb and Sn nanoparticles. In both systems superconductivity is ultimately quenched at sizes governed by the dominance of the quantum fluctuations of the order parameter. However, before the destruction of superconductivity, in Sn nanoparticles we observe giant oscillations in the superconducting energy gap with particle size leading to enhancements as large as 60%. These oscillations are the first experimental proof of coherent shell effects in nanoscale superconductors. Contrarily, we observe no such oscillations in the gap for Pb nanoparticles, which is ascribed to the suppression of shell effects for shorter coherence lengths. Our study paves the way to exploit QSE in boosting superconductivity in low-dimensional systems.

Phase contribution of image potential on empty quantum well States in pb islands on the cu(111) surface

We use scanning tunneling spectroscopy to explore the quantum well states in the Pb islands grown on a Cu(111) surface. Our observation demonstrates that the empty quantum well states, whose energy levels lie beyond 1.2 eV above the Fermi level, are significantly affected by the image potential. As the quantum number increases, the energy separation between adjacent states is shrinking rather than widening, contrary to the prediction for a square potential well. By simply introducing a phase factor to reckon the effect of the image potential, the shrinking behavior of the energy separation can be reasonably explained with the phase accumulation model. The model also reveals that there exists a quantum regime above the Pb surface in which the image potential is vanished. Moreover, the quasi-image-potential state in the tunneling gap is quenched because of the existence of the quantum well states.

An unusual magnetoresistance effect in the heterojunction structure of an ultrathin single-crystal Pb film on silicon substrate

Superconductor films on semiconductor substrates have drawn much attention recently since the derived superconductor-based electronics have been shown to be promising for future data processing and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual magnetoresistance effect when the Pb film is superconducting. In addition to the large fundamental interest in this effect, the simple structure, and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.

First principles calculation of localized surface phonons and electron-phonon interaction at pb(111) thin films

A first principles calculation of the vibrational modes of Pb(111) thin films of thickness up to 14 layers reveals the existence of localized vibrational modes at the slab's surface. Both longitudinal and transverse surface modes localized a few atomic layers are found at energies above the bulk bands. The frequency of these modes presents a bilayer oscillatory behavior. The electron-phonon interaction of the slab's quantum well states is also calculated. We find a large (small) deformation potential for the lowest unoccupied (highest occupied) quantum well state. Its absolute value is also oscillatory with the number of layers.

Manipulating the Kondo resonance through quantum size effects

Manipulating the Kondo effect by quantum confinement has been achieved by placing magnetic molecules on silicon-supported nanostructures. The Kondo resonance of individual manganese phthalocyanine (MnPc) molecules adsorbed on the top of Pb islands was studied by scanning tunneling spectroscopy. Oscillating Kondo temperatures as a function of film thickness were observed and attributed to the formation of the thickness-dependent quantum-well states in the host Pb islands. The present approach provides a technologically feasible way for single spin manipulation by precise thickness control of thin films.

Experimental observation of quantum oscillation of surface chemical reactivities

Here we present direct observation of a quantum reactivity with respect to the amounts of O(2) adsorbed and the rates of surface oxidation as a function of film thickness on ultrathin (2-6 nm) Pb mesas by scanning tunneling microscopy. Simultaneous spectroscopic measurements on the electronic structures reveal a quantum oscillation that originates from quantum well states of the mesas, as a generalization of the Fabry-Pérot modes of confined electron waves. We expect the quantum reactivity to be a general phenomenon for most ultrathin metal films with broad implications, such as nanostructure tuning of surface reactivities and rational design of heterogeneous catalysts.

Quantum size effect on adatom surface diffusion

Using scanning tunneling microscopy, we demonstrate that the nucleation density of Fe islands on the surface of nanoscale Pb films oscillates with the film thickness, providing a direct manifestation of the quantum size effect on surface diffusion. The Fe adatom diffusion barriers were derived to be 204+/-5 and 187+/-5 meV on a 21 and 26 monolayer (ML) Pb film, respectively, by matching the kinetic Monte Carlo simulations to the experimental island densities. The effect is further illustrated by the growth of Fe islands on wedged Pb films, where the Fe island density is consistently higher on the odd-layer films than on the even-layer films in the thickness range of 11 to 15 ML.

Quantum-well wave-function localization and the electron-phonon interaction in thin Ag nanofilms

The electron-phonon interaction in thin Ag nanofilms epitaxially grown on Cu(111) is investigated by temperature-dependent and angle-resolved photoemission from silver quantum-well states. Clear oscillations in the electron-phonon coupling parameter as a function of the silver film thickness are observed. Different from other thin film systems where quantum oscillations are related to the Fermi-level crossing of quantum-well states, we can identify a new mechanism behind these oscillations, based on the wave-function localization of the quantum-well states in the film.

Spin-dependent quantum interference from epitaxial MgO thin films on Fe(001)

Spin-dependent electron reflection from MgO thin films grown on Fe(001) was measured using spin-polarized low energy electron microscopy. The electron reflectivity exhibits quantum interference from which two MgO energy bands with Delta1 symmetry were determined in experiment. We found that a bulklike MgO energy gap is fully established for MgO film thicker than 3 atomic monolayers and that the electron reflectivity from the MgO/Fe interface exhibits a spin-dependent amplitude and a spin-independent phase change.

Controlling the thermal stability of thin films by interfacial engineering

The quantized electronic structure in Pb films on Si(111) varies substantially as the film thickness increases. The changes in electronic energy cause the thermal stability of the films to oscillate with an approximate bilayer period. The phase of the oscillations can be controlled by interfacial engineering. Comparison of Pb films prepared on Si(111) terminated by In, Au, and Pb as interfactants reveals a phase reversal. For , films made of odd numbers of atomic layers (5, 7, and 9) are more stable than the even ones. This trend is reversed for the other two cases.

Quantum size effects on the perpendicular upper critical field in ultrathin lead films

We report the thickness-dependent (in terms of atomic layers) oscillation behavior of the perpendicular upper critical field Hc2perpendicular in the ultrathin lead films at the reduced temperature (t = T/Tc). Distinct oscillations of the normal-state resistivity as a function of film thickness have also been observed. Compared with the Tc oscillation, the Hc2perpendicular shows a considerable large oscillation amplitude and a pi phase shift. The oscillatory mean free path caused by the quantum size effect plays a role in Hc2perpendicular oscillation.