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Lim J, Moon D, Kim S, Kim S. Influence of cutoff radius and tip atomic structure on energy barriers encountered during AFM tip sliding on 2D monolayers. NANOTECHNOLOGY 2024; 35:40LT01. [PMID: 38986446 DOI: 10.1088/1361-6528/ad6164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 07/10/2024] [Indexed: 07/12/2024]
Abstract
In computational studies using the Lennard-Jones (LJ) potential, the widely adopted 2.5σcutoff radius effectively truncates pairwise interactions across diverse systems (Santraet al2008J. Chem. Phys.129234704, Chen and Gao 2021Friction9502-12, Bolintineanuet al2014Part. Mech.1321-56, Takahiro and Kazuhiro 2010J. Phys.: Conf. Ser.215012123, Zhouet al2016Fuel180718-26, Toxvaerd and Dyre 2011J. Chem. Phys.134081102, Toxvaerd and Dyre 2011J. Chem. Phys.134081102). Here, we assess its adequacy in determining energy barriers encountered by a Si monoatomic tip sliding on various two-dimensional (2D) monolayers, which is crucial for understanding nanoscale friction. Our findings emphasize the necessity of a cutoff radius of at least 3.5σto achieve energy barrier values exceeding 95% accuracy across all studied 2D monolayers. Specifically, 3.5σcorresponds to 12.70 Å in graphene, 12.99 Å in MoS2and 13.25 Å in MoSe2. The barrier values calculated using this cutoff support previous experiments comparing friction between different orientations of graphene and between graphene and MoS2(Almeidaet al2016Sci. Rep.631569, Zhanget al2014Sci. China57663-7). Furthermore, we demonstrate the applicability of the 3.5σcutoff for graphene on an Au substrate and bilayer graphene. Additionally, we investigate how the atomic configuration of the tip influences the energy barrier, finding a nearly threefold increase in the barrier along the zigzag direction of graphene when using a Si(001) tip composed of seven Si atoms compared to a monoatomic Si tip.
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Affiliation(s)
- Jaehun Lim
- Department of Photonics and Nanoelectronics, Hanyang University (ERICA), Ansan 15588, Republic of Korea
| | - Donghyeon Moon
- Department of Photonics and Nanoelectronics, Hanyang University (ERICA), Ansan 15588, Republic of Korea
| | - Sunghyun Kim
- Department of Applied Physics, Hanyang University (ERICA), Ansan 15588, Republic of Korea
- Present Address: Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America
| | - Suenne Kim
- Department of Photonics and Nanoelectronics, Hanyang University (ERICA), Ansan 15588, Republic of Korea
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Cao D, Song Y, Peng J, Ma R, Guo J, Chen J, Li X, Jiang Y, Wang E, Xu L. Advances in Atomic Force Microscopy: Weakly Perturbative Imaging of the Interfacial Water. Front Chem 2019; 7:626. [PMID: 31572715 PMCID: PMC6751248 DOI: 10.3389/fchem.2019.00626] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2019] [Accepted: 08/30/2019] [Indexed: 11/17/2022] Open
Abstract
The structure and dynamics of interfacial water, determined by the water-interface interactions, are important for a wide range of applied fields and natural processes, such as water diffusion (Kim et al., 2013), electrochemistry (Markovic, 2013), heterogeneous catalysis (Over et al., 2000), and lubrication (Zilibotti et al., 2013). The precise understanding of water-interface interactions largely relies on the development of atomic-scale experimental techniques (Guo et al., 2014) and computational methods (Hapala et al., 2014b). Scanning probe microscopy has been extensively applied to probe interfacial water in many interdisciplinary fields (Ichii et al., 2012; Shiotari and Sugimoto, 2017; Peng et al., 2018a). In this perspective, we review the recent progress in the noncontact atomic force microscopy (nc-AFM) imaging and AFM simulation techniques and discuss how the newly developed techniques are applied to study the properties of interfacial water. The nc-AFM with the quadrupole-like CO-terminated tip can achieve ultrahigh-resolution imaging of the interfacial water on different surfaces, trace the reconstruction of H-bonding network and determine the intrinsic structures of the weakly bonded water clusters and even their metastable states. In the end, we present an outlook on the directions of future AFM studies of interfacial water as well as the challenges faced by this field.
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Affiliation(s)
- Duanyun Cao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Yizhi Song
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Jinbo Peng
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.,Institute of Experimental and Applied Physics, University of Regensburg, Regensburg, Germany
| | - Runze Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Jing Guo
- College of Chemistry, Beijing Normal University, Beijing, China
| | - Ji Chen
- School of Physics, Peking University, Beijing, China
| | - Xinzheng Li
- School of Physics, Peking University, Beijing, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Ying Jiang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China.,CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China
| | - Enge Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.,Ceramics Division, Songshan Lake Materials Lab, Institute of Physics, Chinese Academy of Sciences, Guangdong, China.,School of Physics, Liaoning University, Shenyang, China
| | - Limei Xu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
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Sweetman A, Rahe P, Moriarty P. Unique determination of "subatomic" contrast by imaging covalent backbonding. NANO LETTERS 2014; 14:2265-2270. [PMID: 24628698 DOI: 10.1021/nl4041803] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The origin of so-called "subatomic" resolution in dynamic force microscopy has remained controversial since its first observation in 2000. A number of detailed experimental and theoretical studies have identified different possible physicochemical mechanisms potentially giving rise to subatomic contrast. In this study, for the first time we are able to assign the origin of a specific instance of subatomic contrast as being due to the back bonding of a surface atom in the tip-sample junction.
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Affiliation(s)
- Adam Sweetman
- The School of Physics and Astronomy, The University of Nottingham , Nottingham NG7 2RD, United Kingdom
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Jarvis SP, Kantorovich L, Moriarty P. Structural development and energy dissipation in simulated silicon apices. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2013; 4:941-8. [PMID: 24455452 PMCID: PMC3896295 DOI: 10.3762/bjnano.4.106] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/17/2013] [Accepted: 12/04/2013] [Indexed: 06/03/2023]
Abstract
In this paper we examine the stability of silicon tip apices by using density functional theory (DFT) calculations. We find that some tip structures - modelled as small, simple clusters - show variations in stability during manipulation dependent on their orientation with respect to the sample surface. Moreover, we observe that unstable structures can be revealed by a characteristic hysteretic behaviour present in the F(z) curves that were calculated with DFT, which corresponds to a tip-induced dissipation of hundreds of millielectronvolts resulting from reversible structural deformations. Additionally, in order to model the structural evolution of the tip apex within a low temperature NC-AFM experiment, we simulated a repeated tip-surface indentation until the tip structure converged to a stable termination and the characteristic hysteretic behaviour was no longer observed. Our calculations suggest that varying just a single rotational degree of freedom can have as measurable an impact on the tip-surface interaction as a completely different tip structure.
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Affiliation(s)
- Samuel Paul Jarvis
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Lev Kantorovich
- Department of Physics, King’s College London, The Strand, London WC2R 2LS, United Kingdom
| | - Philip Moriarty
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
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Pou P, Ghasemi SA, Jelinek P, Lenosky T, Goedecker S, Perez R. Structure and stability of semiconductor tip apexes for atomic force microscopy. NANOTECHNOLOGY 2009; 20:264015. [PMID: 19509446 DOI: 10.1088/0957-4484/20/26/264015] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
The short range force between the tip and the surface atoms, that is responsible for atomic-scale contrast in atomic force microscopy (AFM), is mainly controlled by the tip apex. Thus, the ability to image, manipulate and chemically identify single atoms in semiconductor surfaces is ultimately determined by the apex structure and its composition. Here we present a detailed and systematic study of the most common structures that can be expected at the apex of the Si tips used in experiments. We tackle the determination of the structure and stability of Si tips with three different approaches: (i) first principles simulations of small tip apexes; (ii) simulated annealing of a Si cluster; and (iii) a minima hopping study of large Si tips. We have probed the tip apexes by making atomic contacts between the tips and then compared force-distance curves with the experimental short range forces obtained with dynamic force spectroscopy. The main conclusion is that although there are multiple stable solutions for the atomically sharp tip apexes, they can be grouped into a few types with characteristic atomic structures and properties. We also show that the structure of the last atomic layers in a tip apex can be both crystalline and amorphous. We corroborate that the atomically sharp tips are thermodynamically stable and that the tip-surface interaction helps to produce the atomic protrusion needed to get atomic resolution.
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Affiliation(s)
- P Pou
- Departamento de Fisica Teorica de la Materia Condensada, Universidad Autonoma de Madrid, E-28049 Madrid, Spain.
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Caciuc V, Hölscher H. Ab initio simulation of atomic-scale imaging in noncontact atomic force microscopy. NANOTECHNOLOGY 2009; 20:264006. [PMID: 19509458 DOI: 10.1088/0957-4484/20/26/264006] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
In this paper, we summarize some results of our ab initio simulations aimed at investigating the mechanism of the NC-AFM image contrast on semiconductor and metallic surfaces. We start with an introduction into the basic ideas behind the ab initio simulation process of the NC-AFM experimental results. Our simulations reveal that the interaction of a clean silicon tip with a semiconductor surface like InAs(110) might lead to bond-formation and bond-breaking processes during the approach and retraction of the tip. This imaging mechanism is very similar to that observed on a metallic surface like Ag(110). Interestingly, a clean silicon tip can become contaminated with Ag surface atoms. On both types of surface we observe a significant energy dissipation which is caused by a hysteresis in the tip-sample force curves calculated on the approach and retraction path.
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Affiliation(s)
- V Caciuc
- Institut für Festkörperforschung, Theorie I, Foschungszentrum Jülich, Jülich D-52425, Germany.
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