Dynamics of an Ising chain under local excitation: a scanning tunneling microscopy study of Si(100) dimer rows at 5 K

Dimer Coupling Energies of the Si(001) Surface

The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, ξ_{∥}^{+}/ξ_{⊥}^{+}=5.2 of the fluctuating c(4×2) domains above the critical temperature T_{c}=(190.6±10)  K. We obtain effective couplings J_{∥}=(-24.9±1.3)  meV along the dimer rows and J_{⊥}=(-0.8±0.1)  meV across the dimer rows, i.e., antiferromagneticlike coupling of the dimers with c(4×2) symmetry.

Origin of Magnetic Relaxation Barriers in a Family of Cobalt(II)-Radical Single-Chain Magnets: Density Functional Theory and Ab Initio Calculations

Density functional theory (DFT) and ab initio calculations were performed to probe the origin of the magnetic relaxation barriers for two finite single-chain magnets (SCMs) featuring a one-dimension chain, Co(hfac)₂(R-NapNIT) (R-NapNIT = 2-(2'-(R-)naphthyl)-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide, R = MeO (1) or EtO (2)). Our calculations show that the strong intrachain Co^II-Co^II exchange coupling interactions transmitted by radicals can contribute much more than ionic anisotropy to the height of the reversal barrier of magnetization for the single-chain magnets (SCMs) with |2E| < |4J/3|. In addition, the anisotropic energy barrier Δ_A decreases with the decrease of |2E/J| ratio and finally vanishes in the limit of broad domain walls (|2E| < < |4 J/3|). Therefore, the total magnetic relaxation energy barriers of two SCMs mostly originate from the correlation energy barrier Δ_ξ deriving from the indirect ferromagnetic interaction between Co^II-Co^II transmitted by the strong Co^II-radical antiferromagnetic interactions.

A two-dimensional ON/OFF switching device based on anisotropic interactions of atomic quantum dots on Si(100):H

Controlling the properties of quantum dots at the atomic scale, such as dangling bonds, is a general motivation as they allow studying various nanoscale processes including atomic switches, charge storage, or low binding energy state interactions. Adjusting the coupling of individual silicon dangling bonds to form a 2D device having a defined function remains a challenge. Here, we exploit the anisotropic interactions between silicon dangling bonds on n-type doped Si(100):H surface to tune their hybridization. This process arises from interactions between the subsurface silicon network and dangling bonds inducing a combination of Jahn-Teller distortions and local charge ordering. A three-pointed star-shaped device prototype is designed. By changing the charge state of this device, its electronic properties are shown to switch reversibly from an ON to an OFF state via local change of its central gap. Our results provide a playground for the study of quantum information at the nanoscale.

Reversible 2D Phase Transition Driven By an Electric Field: Visualization and Control on the Atomic Scale

We report on a reversible structural phase transition of a two-dimensional system that can be locally induced by an external electric field. Two different structural configurations may coexist within a CO monolayer on Cu(111). The balance between the two phases can be shifted by an external electric field, causing the domain boundaries to move, increasing the area of the favored phase controllable both in location and size. If the field is further enhanced new domains nucleate. The arrangement of the CO molecules on the Cu surface is observed in real time and real space with atomic resolution while the electric field driving the phase transition is easily varied over a broad range. Together with the well-known molecular manipulation of CO adlayers, our findings open exciting prospects for combining spontaneous long-range order with man-made CO structures such as "molecule cascades" or "molecular graphene". Our new manipulation mode permits us to bridge the gap between fundamental concepts and the fabrication of arbitrary atomic patterns in large scale, by providing unprecedented insight into the physics of structural phase transitions on the atomic scale.

Scanning noise microscopy

The paper describes a simple scheme enabling the real-time characterization of fluctuations, e.g., of the conductance in scanning tunneling microscopy. The technique can be used in parallel to other data acquisition, evaluating the rate, the amplitude, and the duty cycle of telegraphic noise in the tunneling current. This kind of scanning probe microscopy allows to evaluate the noise parameters as a function of the average tunneling current, the electron energy, and the lateral position. Images of the noise with Ångstrom spatial resolution are acquired simultaneously to the topographic information providing a direct correlation between the structural information and the noise. The method can be applied to a large variety of systems to monitor dynamics on the nanoscale, e.g., the localization of tunneling current induced switching within a single molecule. Noise spectroscopy may reveal the involved molecular orbitals, even if they cannot be resolved in standard scanning tunneling spectroscopy. As an example we present experimental data of the organic molecule copper phthalocyanine on a Cu(111) surface [J. Schaffert, M. C. Cottin, A. Sonntag, H. Karacuban, C. A. Bobisch, N. Lorente, J.-P. Gauyacq, and R. Möller, Nature Mater. 12, 223-227 (2013)].

Topological solitons versus nonsolitonic phase defects in a quasi-one-dimensional charge-density wave

We investigated phase defects in a quasi-one-dimensional commensurate charge-density wave (CDW) system, an In atomic wire array on Si(111), using low temperature scanning tunneling microscopy. The unique fourfold degeneracy of the CDW state leads to various phase defects, among which intrinsic solitons are clearly distinguished. The solitons exhibit a characteristic variation of the CDW amplitude with a coherence length of about 4 nm, as expected from the electronic structure, and a localized electronic state within the CDW gap. While most of the observed solitons are trapped by extrinsic defects, moving solitons are also identified and their novel interaction with extrinsic defects is disclosed.

Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias

We use a noncontact atomic force microscope in the qPlus configuration to investigate the structure and influence of defects on the Si(100) surface. By applying millivolt biases, simultaneous tunnel current data is acquired, providing information about the electronic properties of the surface at biases often inaccessible during conventional STM imaging, and highlighting the difference between the contrast observed in NC-AFM and tunnel current images. We also show how NC-AFM (in the absence of tunnel current) can be used to manipulate both the clean c(4 × 2) surface and dopant-related defects.

Time-resolved energy transduction in a quantum capacitor

The capability to deposit charge and energy quantum-by-quantum into a specific atomic site could lead to many previously unidentified applications. Here we report on the quantum capacitor formed by a strongly localized field possessing such capability. We investigated the charging dynamics of such a capacitor by using the unique scanning tunneling microscopy that combines nanosecond temporal and subangstrom spatial resolutions, and by using Si(001) as the electrode as well as the detector for excitations produced by the charging transitions. We show that sudden switching of a localized field induces a transiently empty quantum dot at the surface and that the dot acts as a tunable excitation source with subangstrom site selectivity. The timescale in the deexcitation of the dot suggests the formation of long-lived, excited states. Our study illustrates that a quantum capacitor has serious implications not only for the bottom-up nanotechnology but also for future switching devices.

Toggling bistable atoms via mechanical switching of bond angle

We reversibly switch the state of a bistable atom by direct mechanical manipulation of bond angle using a dynamic force microscope. Individual buckled dimers at the Si(100) surface are flipped via the formation of a single covalent bond, actuating the smallest conceivable in-plane toggle switch (two atoms) via chemical force alone. The response of a given dimer to a flip event depends critically on both the local and nonlocal environment of the target atom-an important consideration for future atomic scale fabrication strategies.

Atomic seesaws

The dynamics of two types of atomic seesaws are studied by open feedback loop scanning tunneling microscopy. The first type of atomic seesaw is a regular Ge dimer of the dimer reconstructed Ge(001) surface and the second type of atomic seesaw is a dimer located on the ridges of Au induced nanowires on a Ge(001) surface. On the bare Ge(001) surface the flip-flop motion of the dimers is induced by phasons, which perform a one-dimensional random walk along the substrate dimer rows. The phasons on the Au induced nanowires ridges are pinned and therefore only a limited number of dimers exhibit flip-flop behavior for the Au/Ge(001) system.

Single molecule manipulation at low temperature and laser scanning tunnelling photo-induced processes analysis through time-resolved studies

This paper describes, firstly, the statistical analysis used to determine the processes that occur during the manipulation of a single molecule through electronically induced excitations with a low temperature (5 K) scanning tunnelling microscope (STM). Various molecular operation examples are described and the ability to probe the ensuing molecular manipulation dynamics is discussed within the excitation context. It is, in particular, shown that such studies can reveal reversible manipulation for tuning dynamics through variation of the excitation energy. Secondly, the photo-induced process arising from the irradiation of the STM junction is also studied through feedback loop dynamics analysis, allowing us to distinguish between photo-thermally and photo-electronically induced signals.

Scanning tunneling spectroscopy

The scanning tunneling microscope (STM) has revolutionized our ability to explore and manipulate atomic-scale solid surfaces. In addition to its unparalleled spatial power, the STM can study dynamical processes, such as molecular conformational changes, by recording current traces as a function of time. It can also be employed to measure the physical properties of molecules or nanostructures down to the atomic scale. Combining STM imaging with measurement of current-voltage (I-V) characteristics [i.e., scanning tunneling spectroscopy (STS)] at similar resolution makes it possible to obtain a detailed map of the electronic structure of a surface. For many years, STM lacked chemical specificity; however, the recent development of STM-IETS (inelastic electron tunneling spectroscopy) has allowed us to measure the vibrational spectrum of a single molecule. This review introduces and illustrates these recent developments with a few simple scholarly examples.

Dynamics and energetics of Ge(001) dimers

The dynamic behavior of surface dimers on Ge(001) has been studied by positioning the tip of a scanning tunneling microscope over single flip-flopping dimers and measuring the tunneling current as a function of time. We observe that not just symmetric, but also asymmetric appearing dimers exhibit flip-flop motion. The dynamics of flip-flopping dimers can be used to sensitively gauge the local potential landscape of the surface. Through a spatial and time-resolved measurement of the flip-flop frequency of the dimers, local strain fields near surface defects can be accurately probed.