Linear magnetization dependence of the intrinsic anomalous Hall effect

Unusual multiple magnetic transitions and anomalous Hall effect observed in antiferromagnetic Weyl semimetal, Mn2.94Ge (Ge-rich)

We report on the magnetic and Hall effect measurements of the magnetic Weyl semimetal, Mn2.94Ge (Ge-rich) single crystal. From the magnetic properties study, we identify unusual multiple magnetic transitions below the Ne'el temperature of 353 K, such as the spin-reorientation (TSR) and ferromagnetic-like transitions. Consistent with the magnetic properties, the Hall effect study shows unusual behavior around the spin-reorientation transition. Specifically, the anomalous Hall conductivity increases with increasing temperature, reaching a maximum atTSR, which then gradually decreases with increasing temperature. This observation is quite in contrast to the Mn3+δGe (Mn-rich) system, though both compositions share the same hexagonal crystal symmetry. This study unravels the sensitivity of magnetic and topological properties on the Mn concentration.

Near-room temperature ferromagnetism and a tunable anomalous Hall effect in atomically thin Fe4CoGeTe2

Itinerant ferromagnetism at room temperature is a key factor for spin transport and manipulation. Here, we report the realization of near-room temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (∼323 K-337 K) is almost unchanged when the thickness is as low as 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of the band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The near-room temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.

Topological magnons driven by the Dzyaloshinskii-Moriya interaction in the centrosymmetric ferromagnet Mn5Ge3

The phase of the quantum-mechanical wave function can encode a topological structure with wide-ranging physical consequences, such as anomalous transport effects and the existence of edge states robust against perturbations. While this has been exhaustively demonstrated for electrons, properties associated with the elementary quasiparticles in magnetic materials are still underexplored. Here, we show theoretically and via inelastic neutron scattering experiments that the bulk ferromagnet Mn5Ge3 hosts gapped topological Dirac magnons. Although inversion symmetry prohibits a net Dzyaloshinskii-Moriya interaction in the unit cell, it is locally allowed and is responsible for the gap opening in the magnon spectrum. This gap is predicted and experimentally verified to close by rotating the magnetization away from the c-axis with an applied magnetic field. Hence, Mn5Ge3 realizes a gapped Dirac magnon material in three dimensions. Its tunability by chemical doping or by thin film nanostructuring defines an exciting new platform to explore and design topological magnons. More generally, our experimental route to verify and control the topological character of the magnons is applicable to bulk centrosymmetric hexagonal materials, which calls for systematic investigation.

Discovery of Topological Magnetic Textures near Room Temperature in Quantum Magnet TbMn6 Sn6

The study of topology in quantum materials has fundamentally advanced the understanding in condensed matter physics and potential applications in next-generation quantum information technology. Recently, the discovery of a topological Chern phase in the spin-orbit-coupled Kagome lattice TbMn₆ Sn₆ has attracted considerable interest. Whereas these phenomena highlight the contribution of momentum space Berry curvature and Chern gap on the electronic transport properties, less is known about the intrinsic real space magnetic texture, which is crucial for understanding the electronic properties and further exploring the unique quantum behavior. Here, the stabilization of topological magnetic skyrmions in TbMn₆ Sn₆ using Lorentz transmission electron microscopy near room temperature, where the spins experience full spin reorientation transition between the a- and c-axes, is directly observed. An effective spin Hamiltonian based on the Ginzburg-Landau theory is constructed and micromagnetic simulation is performed to clarify the critical role of Ruderman-Kittel-Kasuya-Yosida interaction on the stabilization of skyrmion lattice. These results not only uncover nontrivial spin topological texture in TbMn₆ Sn₆ , but also provide a solid basis to study its interplay with electronic topology.

In-Plane Anomalous Hall Effect in PT-Symmetric Antiferromagnetic Materials

The anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with an orthogonal configuration between the electric field, magnetization, and the Hall current. Here, based on the symmetry analysis, we find an unconventional AHE induced by the in-plane magnetic field (IPAHE) via the spin-canting effect in PT-symmetric antiferromagnetic (AFM) systems, featuring a linear dependence of magnetic field and 2π angle periodicity with a comparable magnitude to conventional AHE. We demonstrate the key findings in the known AFM Dirac semimetal CuMnAs and a new kind of AFM heterodimensional VS_{2}-VS superlattice with a nodal-line Fermi surface and, also, briefly discuss the experimental detection. Our Letter provides an efficient pathway for searching and/or designing realistic materials for a novel IPAHE that could greatly facilitate their application in AFM spintronic devices. National Science Foundation.

Breakdown of the scaling relation of anomalous Hall effect in Kondo lattice ferromagnet USbTe

The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature.

Topological Hall Effect Anisotropy in Kagome Bilayer Metal Fe_{3}Sn_{2}

Kagome lattice materials have attracted growing interest for their topological properties and flatbands in electronic structure. We present a comprehensive study on the anisotropy and out-of-plane electric transport in Fe_{3}Sn_{2}, a metal with bilayer of Fe kagome planes and with massive Dirac fermions that features high-temperature noncollinear magnetic structure and magnetic skyrmions. For the electrical current path along the c axis, in micron-size crystals, we found a large topological Hall effect over a wide temperature range down to spin-glass state. Twofold and fourfold angular magnetoresistance are observed for different magnetic phases, reflecting the competition of magnetic interactions and magnetic anisotropy in kagome lattice that preserve robust topological Hall effect for inter-kagome bilayer currents. This provides new insight into the anisotropy in Fe_{3}Sn_{2}, of interest in skyrmionic-bubble application-related micron-size devices.

Anomalous Hall effect in topological Weyl and nodal-line semimetal Heusler compound Co2VAl

Magnetic topological semimetals (TSMs) with broken time-reversal symmetry are very rare and have drawn significant attention in condensed matter physics due to their numerous intriguing topological properties. Among these various magnetic TSMs, Co₂-based full Heusler compounds are of current interest, since a few of these materials exhibit Weyl and nodal fermions in their topological band structure. In this work, we report a comprehensive study of anomalous Hall effect (AHE) in the ferromagnetic full Heusler compound Co₂VAl. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of the occupied electronic Bloch states. The present study of Co₂VAl attempts to understand and explore the possibility of topology-induced AHE. The anomalous Hall resistivityρxyAis observed to scale quadratically with the longitudinal resistivityρ_xx. Our experimental results also reveal that the anomalous Hall conductivity (AHC) is ∼85 cm^-1at 2 K with an intrinsic contribution of ∼75.6 S cm^-1, and is nearly insensitive to temperature. The first principle calculations note that the Berry curvature originated from a gapped nodal line and symmetry-protected Weyl nodes near the Fermi level (EF) is the main source of AHE in this compound. Thus, this investigation on Co₂VAl discloses that it is a ferromagnetic Weyl and nodal-line TSM. The theoretically calculated AHC is in well agreement with the experimentally obtained AHC.

Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La2/3 Sr1/3 MnO3 Films

In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, Ru-doping-enhanced AHE in La_2/3 Sr_1/3 Mn_1-x Ru_x O₃ epitaxial films is exploited. As the B-site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from nΩ cm to µΩ cm scale. Ru doping leads to strong competition between the ferromagnetic double-exchange interaction and the antiferromagnetic superexchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. The findings can pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.

Topological charge-entropy scaling in kagome Chern magnet TbMn6Sn6

In ordinary materials, electrons conduct both electricity and heat, where their charge-entropy relations observe the Mott formula and the Wiedemann-Franz law. In topological quantum materials, the transverse motion of relativistic electrons can be strongly affected by the quantum field arising around the topological fermions, where a simple model description of their charge-entropy relations remains elusive. Here we report the topological charge-entropy scaling in the kagome Chern magnet TbMn6Sn6, featuring pristine Mn kagome lattices with strong out-of-plane magnetization. Through both electric and thermoelectric transports, we observe quantum oscillations with a nontrivial Berry phase, a large Fermi velocity and two-dimensionality, supporting the existence of Dirac fermions in the magnetic kagome lattice. This quantum magnet further exhibits large anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects, all of which persist to above room temperature. Remarkably, we show that the charge-entropy scaling relations of these anomalous transverse transports can be ubiquitously described by the Berry curvature field effects in a Chern-gapped Dirac model. Our work points to a model kagome Chern magnet for the proof-of-principle elaboration of the topological charge-entropy scaling.

Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite thin films

Magnetism and spin-orbit coupling are two quintessential ingredients underlying topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by spin-orbit coupling, the nodal structures become a source of Berry curvature, leading to a large anomalous Hall effect. However, two-dimensional systems can possess stable nodal structures only when proper crystalline symmetry exists. Here we show that two-dimensional spin-polarized band structures of perovskite oxides generally support symmetry-protected nodal lines and points that govern both the sign and the magnitude of the anomalous Hall effect. To demonstrate this, we performed angle-resolved photoemission studies of ultrathin films of SrRuO₃, a representative metallic ferromagnet with spin-orbit coupling. We show that the sign-changing anomalous Hall effect upon variation in the film thickness, magnetization and chemical potential can be well explained by theoretical models. Our work may facilitate new switchable devices based on ferromagnetic ultrathin films.

Rare Earth Engineering in RMn_{6}Sn_{6} (R=Gd-Tm, Lu) Topological Kagome Magnets

Exploration of the topological quantum materials with electron correlation is at the frontier of physics, as the strong interaction may give rise to new topological phases and transitions. Here we report that a family of kagome magnets RMn_{6}Sn_{6} manifest the quantum transport properties analogical to those in the quantum-limit Chern magnet TbMn_{6}Sn_{6}. The topological transport in the family, including quantum oscillations with nontrivial Berry phase and large anomalous Hall effect arising from Berry curvature field, points to the existence of Chern gapped Dirac fermions. Our observation demonstrates a close relationship between rare-earth magnetism and topological electron structure, indicating the rare-earth elements can effectively engineer the Chern quantum phase in kagome magnets.

Tailoring Dzyaloshinskii-Moriya interaction in a transition metal dichalcogenide by dual-intercalation

Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS₂ by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman-Kittel-Kasuya-Yosida mechanism. The resultant giant topological Hall resistivity [Formula: see text] of [Formula: see text] at [Formula: see text] (about [Formula: see text] larger than the zero-bias value) is larger than most known chiral magnets. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin-orbit interaction. Dual-intercalation in 2H-TaS₂ provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.

Evolution of diverse Hall effects during the successive magnetic phase transitions in Mn2.5Fe0.6Sn0.9 Kagome-lattice alloy

Evolution of diverse Hall effects due to successive magnetic transitions has been observed in Mn_2.5Fe_0.6Sn_0.9 by suitable chemical substitution of Fe in Mn_3.1Sn_0.9. This noncollinear antiferromagnetic alloy exhibits a Neel temperature of 325 K. Upon cooling from 325 K, a magnetic phase transition from noncollinear antiferromagnetism to ferromagnetism occurs at 168 K due to the tilting of magnetization towards c axis. Above this temperature, anomalous Hall resistivity ranged from 0.6 to 1.3 μΩ cm has been observed in noncollinear antiferromagnetic state. Below this temperature, a topological Hall effect (THE) starts to appear due to the non-vanishing scalar spin chirality arising from the noncoplanar spin structure. Further decreasing temperature to 132 K, another magnetic transition happens, resulting in the coexistence of ferromagnetism and antiferromagnetism, so that a Hall plateau with large hysteresis below 70 K is yielded. A hysteresis as high as ∼80 kOe is obtained in ρ _xy -H at 15 K. However, the Hall plateau disappears and only anomalous Hall effect (AHE) persists when further decreasing the temperature to 5 K. The present study provides a picture of diverse magneto-transport properties correlated to the variable spin structures driven by magnetic phase transitions.

MnPS3 spin-flop transition-induced anomalous Hall effect in graphite flake via van der Waals proximity coupling

Detection of the antiferromagnetic (AFM) state is an important issue for the application of two-dimensional (2D) antiferromagnets in spintronics, and interfacial exchange coupling is a highly efficient means to detect AFM order. However, there are no experimental reports of AFM state detection in van der Waals heterostructures, based on which 2D AFM spintronics can be developed. In this paper, we report a spin flop transition (SFT)-induced anomalous Hall effect in a heterostructure of MnPS3/graphite flake (GF) through van der Waals proximity coupling. The scaling behavior study and theoretical calculations confirm that the SFT in AFM MnPS3 can generate momentum-space nonzero Berry curvature integration in the adjacent GF. Our work opens a path for the realization of AFM state detection through the proximity effect in a stacking structure, thereby promoting the application of 2D antiferromagnets in future 2D spintronics.

Weak localization and small anomalous Hall conductivity in ferromagnetic Weyl semimetal Co2TiGe

Several cobalt-based Heusler alloys have been predicted to exhibit Weyl Semimetal behavior due to time reversal symmetry breaking. Co2TiGe is one of the predicted ferromagnetic Weyl semimetals. In this work, we report weak localization and small anomalous Hall conductivity in half-metallic Co2TiGe thin films grown by molecular beam epitaxy. The longitudinal resistivity shows semimetallic behavior. Elaborate analysis of longitudinal magnetoconductance shows the presence of a weak localization quantum correction present even up to room temperature and reduction in dephasing length at lower temperature. Negative longitudinal magnetoresistance is observed from 5 to 300 K, but at 300 K magnetoresistance becomes positive above 0.5 T magnetic field. The anomalous Hall effect has been investigated in these thin films. The measured anomalous Hall conductivity decreases with increasing temperature, and a small anomalous Hall conductivity has been measured at various temperatures which may be arising due to both intrinsic and extrinsic mechanisms.

Large intrinsic anomalous Hall effect in half-metallic ferromagnet Co3Sn2S2 with magnetic Weyl fermions

The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspects in condensed matter physics and has been a controversial topic for a long time. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of occupied electronic states. In a magnetic Weyl semimetal with broken time-reversal symmetry, there are significant contributions to Berry curvature around Weyl nodes, possibly leading to a large intrinsic AHE. Here, we report the quite large AHE in the half-metallic ferromagnet Co₃Sn₂S₂ single crystal. By systematically mapping out the electronic structure of Co₃Sn₂S₂ both theoretically and experimentally, we demonstrate that the intrinsic AHE from the Weyl fermions near the Fermi energy is dominating. The intrinsic anomalous Hall conductivity depends linearly on the magnetization and can be reproduced by theoretical simulation, in which the Weyl nodes monotonically move with the constrained magnetic moment on Co atom.

The large intrinsic anomalous Hall effect (AHE) in magnetic Weyl semimetals is expected but rarely verified experimentally. Here, Wang et al. report large intrinsic AHE with linear dependence on magnetization in a half-metallic ferromagnet Co₃Sn₂S₂ single crystal with Kagome lattice of Co atoms, arising dominantly from the Weyl fermions.

Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge

It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices.

Detection of the Anomalous Velocity with Subpicosecond Time Resolution in Semiconductor Nanostructures

We report on the time-resolved detection of the anomalous velocity, constituting charge carriers moving perpendicular to an electric driving field, in undoped GaAs quantum wells. For this we optically excite the quantum wells with circularly polarized femtosecond laser pulses, thereby creating a state which breaks time-inversion symmetry. We then employ a quasi-single-cycle terahertz pulse as an electric driving field to induce the anomalous velocity. The electromagnetic radiation emitted from the anomalous velocity is studied with a subpicosecond time resolution and reveals intriguing results. We are able to distinguish between intrinsic (linked to the Berry curvature) and extrinsic (linked to scattering) contributions to the anomalous velocity both originating from the valence band and observe local energy space dependence of the anomalous velocity. Our results thus constitute a significant step towards noninvasive probing of the anomalous velocity locally in the full energy-momentum space and enable the investigation of many popular physical effects such as the anomalous Hall effect and spin Hall effect on ultrafast time scales.

Magnetic reversal in Mn5Ge3 thin films: an extensive study

We present a comprehensive study of magnetization reversal process in thin films of Mn5Ge3. For this investigation, we have studied the magnetic anisotropy of Mn5Ge3 layers as a function of the film thickness using VSM and SQUID magnetometers. The samples grown by molecular beam epitaxy exhibit a reorientational transition of the easy axis of magnetization from in-plane to out-of-plane as the film thickness increases. We provide evidence that above a critical thickness estimated as 20 nm, the magnetic structure is most probably constituted of stripes with out-of-plane magnetization pointing alternately up and down. We have analyzed our results using different phenomenological models and all the calculations converge towards values for magnetocrystalline anisotropy constant and saturation magnetization that are in excellent agreement with the reported values for bulk Mn5Ge3. This study has also led to the first estimation in Mn5Ge3 of the exchange constant, the surface energy of domain walls as well as their width. These parameters are essential for determining whether this material can be used in the next generation of spintronic devices.

Enhanced anomalous Hall effect in Fe nanocluster assembled thin films

An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (ta = 160-1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (Rs) at ta = 1200 nm reaches its maximum of 2.4 × 10(-8) Ω cm G(-1) at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivity (ρ(A)xy) first increases and then decreases with the increase of temperature accompanied by a sign change from positive to negative. Analysis of the results revealed that ρ(A)xy decreases with increasing longitudinal resistivity (ρxx) on a double-logarithmic scale and obeys a new scaling relation of log(ρ(A)xy/ρxx) = a0 + b0 log ρxx.

Hall voltages without a magnetic field in a non-uniform two-dimensional electron system

We report on a measurement of giant second-harmonic Hall voltages which occur without a magnetic field and do not change their sign on current reversal in a two-dimensional electron system with a transverse density gradient. A quadratic dependence on the electric field, a strong temperature dependence, and both magnitude and directional dependence on the magnetic field are also observed. Such behavior points towards a plausible explanation based on a novel spin Hall effect with in-plane spin polarization.

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ion implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is a 3d6 configuration, which is the same as that in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.

Chemical composition tuning of the anomalous Hall effect in isoelectronic L10FePd(1-x)Pt(x) alloy films

The anomalous Hall effect (AHE) in L1(0)FePd(1-x)Pt(x) alloy films is studied both experimentally and theoretically. We find that the intrinsic contribution (σ(AH)(int)) to the AHE can be significantly increased, whereas the extrinsic side-jump contribution (σ(AH)(sj)) can be continuously reduced from being slightly larger than σ(AH)(int) in L1(0) FePd to being much smaller than σ(AH)(int) in L1(0) FePt, by increasing the Pt composition x. We show that this chemical composition tuning of the intrinsic contribution is afforded by the stronger spin-orbit coupling strength on the Pd/Pt site when the lighter Pd atoms are replaced by the heavier Pt atoms. Our results provide a means of manipulating the competing AHE mechanisms in ferromagnetic alloys for fully understanding the AHE and also for technological applications of ferromagnetic alloys.

Spin-orbit strength driven crossover between intrinsic and extrinsic mechanisms of the anomalous hall effect in the epitaxial L1{0}-ordered ferromagnets FePd and FePt

We determine the composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1_{0} FePd and FePt alloys. We show that the AHE signal in our 30 nm thick epitaxially deposited films of FePd is mainly due to an extrinsic side jump, while in the epitaxial FePt films of the same thickness and degree of order the intrinsic contribution is dominating over the extrinsic mechanisms of the AHE. We relate this crossover to the difference in spin-orbit strength of Pt and Pd atoms and suggest that this phenomenon can be used for tuning the origins of the AHE in complex alloys.

Non-collinearity and spin frustration in the itinerant kagome ferromagnet Fe(3)Sn(2)

Frustrated itinerant ferromagnets, with non-collinear static spin structures, are an exciting class of material as their spin chirality can introduce a Berry phase in the electronic scattering and lead to exotic electronic phenomena such as the anomalous Hall effect (AHE). This study presents a reexamination of the magnetic properties of Fe(3)Sn(2), a metallic ferromagnet, based on the two-dimensional kagome bilayer structure. Previously thought of as a conventional ferromagnet, we show using a combination of SQUID (superconducting quantum interference device) measurements, symmetry analysis and powder neutron diffraction that Fe(3)Sn(2) is a frustrated ferromagnet with a temperature-dependent non-collinear spin structure. The complexity of the magnetic interactions is further evidenced by a re-entrant spin glass transition ([Formula: see text] K) at temperatures far below the main ferromagnetic transition (T(C) = 640 K). Fe(3)Sn(2) therefore provides a rare example of a frustrated itinerant ferromagnet. Further, as well as being of great fundamental interest our studies highlight the potential of Fe(3)Sn(2) for practical application in spintronics technology, as the AHE arising from the ferromagnetism in this material is expected to be enhanced by the coupling between the conduction electrons and the non-trivial magnetic structure over an exceptionally wide temperature range.

Orientation dependence of the intrinsic anomalous Hall effect in hcp Cobalt

We carry out first-principles calculations of the dependence of the intrinsic anomalous Hall conductivity of hcp Co on the spin magnetization direction. The Hall conductivity drops from 481 to 116 S/cm as the magnetization is tilted from the easy axis (c axis) to the ab plane. These values agree reasonably well with measurements on single crystals, while the angular average of 226 S/cm is in excellent agreement with the value of 205 S/cm measured in polycrystalline films. The strong intrinsic anisotropy is shown to arise from quasidegeneracies near the Fermi level.

Proper scaling of the anomalous Hall effect

Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result clearly exposed the fundamental flaws of the conventional scaling rhoAH=f(rho(xx)) between the anomalous Hall resistivity and longitudinal resistivity. A new scaling rhoAH=f(rho(xx0),rho(xx)) that also involves the residual resistivity has been established which helps identify the intrinsic and extrinsic mechanisms of the anomalous Hall effect.

Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

Berry phase effect on the exciton transport and on the exciton Bose-Einstein condensate

With the exciton lifetime much extended in semiconductor quantum-well structures, the exciton transport and Bose-Einstein condensation have become a focus of research in recent years. We reveal a momentum-space gauge field in the exciton center-of-mass dynamics due to Berry phase effects. We predict a spin-dependent transport of the excitons analogous to the anomalous Hall and Nernst effects for electrons. We also predict spin-dependent circulation of a trapped exciton gas and instability in an exciton condensate in favor of vortex formation.

Anomalous hall effect in the (in,mn)sb dilute magnetic semiconductor

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and supports the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

Crossover behavior of the anomalous Hall effect and anomalous nernst effect in itinerant ferromagnets

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are experimentally investigated in a variety of ferromagnetic metals including pure transition metals, oxides, and chalcogenides, whose resistivities range over 5 orders of magnitude. For these ferromagnets, the transverse conductivity sigma{xy} versus the longitudinal conductivity sigma{xx} shows a crossover behavior with three distinct regimes in accordance qualitatively with a recent unified theory of the intrinsic and extrinsic AHE. We also found that the transverse Peltier coefficient alpha{xy} for the ANE obeys the Mott rule. These results offer a coherent and semiquantitative understanding of the AHE and ANE to an issue of controversy for many decades.

Absence of skew scattering in two-dimensional systems: testing the origins of the anomalous Hall effect

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, taking into account the intrinsic, side-jump, and skew-scattering contributions to the transport. We find that the skew scattering, principally responsible for the extrinsic contribution to the anomalous Hall effect, vanishes for the two-dimensional electron system if both chiral Rashba subbands are partially occupied, and vanishes always for the two-dimensional hole gas studied here, regardless of the band filling. Our prediction can be tested with the proposed coplanar two-dimensional electron-hole gas device and can be used as a benchmark to understand the crossover from the intrinsic to the extrinsic anomalous Hall effect.

Optical control of topological quantum transport in semiconductors

Intense coherent laser radiation red-detuned from absorption edge can reactively activate sizable Hall-type charge and spin transport in n-doped paramagnetic semiconductors as a consequence of k-space Berry curvature transferred from the valence band to the photon-dressed conduction band. In the presence of disorder, the optically induced Hall conductance can change sign with laser intensity.

Interplay between carrier and impurity concentrations in annealed Ga1-xMnxAs: intrinsic anomalous hall effect

Investigating the scaling behavior of annealed Ga1-xMnxAs anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear. Furthermore, measured anomalous Hall conductivities in the quadratic regime when properly scaled by carrier concentration remain constant, spanning nearly a decade in conductivity as well as over 100 K in T_[C] and comparing favorably to theoretically predicated values for the intrinsic origins of the anomalous Hall effect. Both qualitative and quantitative agreements strongly point to the validity of new equations of motion including the Berry phase contributions as well as the tunability of the anomalous Hall effect.

Berry-phase effect in anomalous thermoelectric transport

We develop a theory of the Berry-phase effect in anomalous transport in ferromagnets driven by statistical forces such as the gradient of temperature or chemical potential. Here a charge Hall current arises from the Berry-phase correction to the orbital magnetization rather than from the anomalous velocity, which does not exist in the absence of a mechanical force. A finite-temperature formula for the orbital magnetization is derived, which enables us to provide an explicit expression for the off-diagonal thermoelectric conductivity, to establish the Mott relation between the anomalous Nernst and Hall effects, and to reaffirm the Onsager relations between reciprocal thermoelectric conductivities. A first-principles evaluation of our expression is carried out for the material CuCr(2)Se(4-x)Br(x), obtaining quantitative agreement with a recent experiment.