Semimetal-to-semimetal charge density wave transition in 1T-TiSe(2)

Dramatic Plasmon Response to the Charge-Density-Wave Gap Development in 1T-TiSe_{2}

1T-TiSe_{2} is one of the most studied charge density wave (CDW) systems, not only because of its peculiar properties related to the CDW transition, but also due to its status as a promising candidate of exciton insulator signaled by the proposed plasmon softening at the CDW wave vector. Using high-resolution electron energy loss spectroscopy, we report a systematic study of the temperature-dependent plasmon behaviors of 1T-TiSe_{2}. We unambiguously resolve the plasmon from phonon modes, revealing the existence of Landau damping to the plasmon at finite momentums, which does not support the plasmon softening picture for exciton condensation. Moreover, we discover that the plasmon lifetime at zero momentum responds dramatically to the band gap evolution associated with the CDW transition. The interband transitions near the Fermi energy in the normal phase are demonstrated to serve as a strong damping channel of plasmons, while such a channel in the CDW phase is suppressed due to the CDW gap opening, which results in the dramatic tunability of the plasmon in semimetals or small-gap semiconductors.

First-principles study on the structural properties of 2D MXene SnSiGeN4 and its electronic properties under the effects of strain and an external electric field

The MXene SnSiGeN₄ monolayer as a new member of the MoSi₂N₄ family was proposed for the first time, and its structural and electronic properties were explored by applying first-principles calculations with both PBE and hybrid HSE06 approaches. The layered hexagonal honeycomb structure of SnSiGeN₄ was determined to be stable under dynamical effects or at room temperature of 300 K, with a rather high cohesive energy of 7.0 eV. The layered SnSiGeN₄ has a Young's modulus of 365.699 N m^-1 and a Poisson's ratio of 0.295. The HSE06 approach predicted an indirect band gap of around 2.4 eV for the layered SnSiGeN₄. While the major donation from the N-p orbitals to the band structure makes SnSiGeN₄'s band gap close to those of similar 2D MXenes, the smaller distributions from the other orbitals of Sn, Si, and Ge slightly vary this band gap. The work functions of the GeN and SiN surfaces are 6.367 eV and 5.903 eV, respectively. The band gap of the layered SnSiGeN₄ can be easily tuned by strain and an external electric field. A semiconductor-metal transition can occur at certain values of strain, and with an electric field higher than 5 V nm^-1. The electron mobility of the layered SnSiGeN₄ can reach up to 677.4 cm² V^-1 s^-1, which is much higher than the hole mobility of about 52 cm² V^-1 s^-1. The mentioned characteristics make the layered SnSiGeN₄ a very promising material for use in electronic and photoelectronic devices, and for solar energy conversion.

Recent Development of Ultrafast Optical Characterizations for Quantum Materials

The advent of intense ultrashort optical pulses spanning a frequency range from terahertz to the visible has opened a new era in the experimental investigation and manipulation of quantum materials. The generation of strong optical field in an ultrashort time scale enables the steering of quantum materials nonadiabatically, inducing novel phenomenon or creating new phases which may not have an equilibrium counterpart. Ultrafast time-resolved optical techniques have provided rich information and played an important role in characterization of the nonequilibrium and nonlinear properties of solid systems. Here, some of the recent progress of ultrafast optical techniques and their applications to the detection and manipulation of physical properties in selected quantum materials are reviewed. Specifically, the new development in the detection of the Higgs mode and photoinduced nonequilibrium response in the study of superconductors by time-resolved terahertz spectroscopy are discussed.

Observation of an Incommensurate Charge Density Wave in Monolayer TiSe_{2}/CuSe/Cu(111) Heterostructure

TiSe_{2} is a layered material exhibiting a commensurate (2×2×2) charge density wave (CDW) with a transition temperature of ∼200  K. Recently, incommensurate CDW in bulk TiSe_{2} draws great interest due to its close relationship with the emergence of superconductivity. Here, we report an incommensurate superstructure in monolayer TiSe_{2}/CuSe/Cu(111) heterostructure. Characterizations by low-energy electron diffraction and scanning tunneling microscopy show that the main wave vector of the superstructure is ∼0.41a^{*} or ∼0.59a^{*} (here a^{*} is in-plane reciprocal lattice constant of TiSe_{2}). After ruling out the possibility of moiré superlattices, according to the correlation of the wave vectors of the superstructure and the large indirect band gap below the Fermi level, we propose that the incommensurate superstructure is associated with an incommensurate charge density wave (I-CDW). It is noteworthy that the I-CDW is robust with a transition temperature over 600 K, much higher than that of commensurate CDW in pristine TiSe_{2}. Based on our data and analysis, we present that interface effect may play a key role in the formation of the I-CDW state.

Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1T-ZrX2 (X = Se, Te) at the Two-Dimensional Limit

A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX₂ (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX₂ films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

Enhanced photocurrent response speed in charge-density-wave phase of TiSe2-metal junctions

Group IVB transition metal dichalcogenides (TMDCs) have attracted significant attention due to their predicted high charge carrier mobility, large sheet current density, and enhanced thermoelectric power. Here, we investigate the electrical and optoelectronic properties of few-layer titanium diselenide (TiSe2)-metal junctions through spatial-, wavelength-, temperature-, power- and temporal-dependent scanning photocurrent measurements. Strong photocurrent responses have been detected at TiSe2-metal junctions, which is likely attributed to both photovoltaic and photothermoelectric effects. A fast response time of 31 μs has been achieved, which is two orders of magnitude better than HfSe2 based devices. More importantly, our experimental results reveal a significant enhancement in the response speed upon cooling to the charge-density-wave (CDW) phase transition temperature (TCDW = 206 K), which may result from dramatic reduction in carrier scattering that occurs as a result of the switching between the normal and CDW phases of TiSe2. Additionally, the photoresponsivity at 145 K is up to an order of magnitude higher than that obtained at room temperature. These fundamental studies not only offer insight for the photocurrent generation mechanisms of group IVB TMDC materials, but also provide a route to engineering future temperature-dependent, two-dimensional, fast electronic and optoelectronic devices.

Fermi Surface Reconstruction and Electron Dynamics at the Charge-Density-Wave Transition in TiSe_{2}

The evolution of the charge carrier concentrations and mobilities are examined across the charge-density-wave (CDW) transition in TiSe_{2}. Combined quantum oscillation and magnetotransport measurements show that a small electron pocket dominates the electronic properties at low temperatures while an electron and hole pocket contribute at room temperature. At the CDW transition, an abrupt Fermi surface reconstruction and a minimum in the electron and hole mobilities are extracted from two-band and Kohler analysis of magnetotransport measurements. The minimum in the mobilities is associated with the overseen role of scattering from the softening CDW mode. With the carrier concentrations and dynamics dominated by the CDW and the associated bosonic mode, our results highlight TiSe_{2} as a prototypical system to study the Fermi surface reconstruction at a density-wave transition.

Ultrafast charge ordering by self-amplified exciton-phonon dynamics in TiSe2

The origin of charge density waves (CDWs) in TiSe\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{2}$$\end{document}2 has long been debated, mainly due to the difficulties in identifying the timescales of the excitonic pairing and electron–phonon coupling (EPC). Without a time-resolved and microscopic mechanism, one has to assume simultaneous appearance of CDW and periodic lattice distortions (PLD). Here, we accomplish a complete separation of ultrafast exciton and PLD dynamics and unravel their interplay in our real-time time-dependent density functional theory simulations. We find that laser pulses knock off the exciton order and induce a homogeneous bonding–antibonding transition in the initial 20 fs, then the weakened electronic order triggers ionic movements antiparallel to the original PLD. The EPC comes into play after the initial 20 fs, and the two processes mutually amplify each other leading to a complete inversion of CDW ordering. The self-amplified dynamics reproduces the evolution of band structures in agreement with photoemission experiments. Hence we resolve the key processes in the initial dynamics of CDWs that help elucidate the underlying mechanism.

The physical origins of charge density waves in 1T-TiSe2 and their response to ultrafast excitation have long been a topic of theoretical and experimental debate. Here the authors present an ab initio theory that successfully captures the observed dynamics of charge density wave formation.

Revealing 'plasmaron' feature in DySb by optical spectroscopy study

We report magnetic susceptibility, resistivity and optical spectroscopy study on single crystal sample DySb. It exhibits extremely large magnetoresistance (XMR), and a magnetic phase transition from paramagnetic (PM) to antiferromagnetic (AFM) state at about 10 K. A 'screened' plasma edge at about 4000 cm^-1 is revealed by optical measurement, which suggests that the material has a low carrier density. With decreasing temperature, the 'screened' plasma edge shows a blue shift, possibly due to a decrease of the effective mass of carriers. Notably, an anomalous temperature dependent midinfrared absorption feature is observed in the vicinity of the 'screened' plasma edge. In addition, it can be connected to the inflection point in the real part of the dielectric function [Formula: see text], the frequency of which exactly tracks the temperature dependent 'screened' plasma frequency. This phenomena can be explained by the appearance of a coupled electron-plasmon 'plasmaron' feature.

Unveiling the charge density wave inhomogeneity and pseudogap state in 1T-TiSe2

By using scanning tunneling microscopy (STM)/spectroscopy (STS), we systematically characterize the electronic structure of lightly doped 1T-TiSe₂, and demonstrate the existence of the electronic inhomogeneity and the pseudogap state. It is found that the intercalation induced lattice distortion impacts the local band structure and reduce the size of the charge density wave (CDW) gap with the persisted 2 × 2 spatial modulation. On the other hand, the delocalized doping electrons promote the formation of pseudogap. Domination by either of the two effects results in the separation of two characteristic regions in real space, exhibiting rather different electronic structures. Further doping electrons to the surface confirms that the pseudogap may be the precursor for the superconducting gap. This study suggests that the competition of local lattice distortion and the delocalized doping effect contribute to the complicated relationship between charge density wave and superconductivity for intercalated 1T-TiSe₂.

Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering

Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe_1.8 nanosheets exhibit a large negative magnetoresistance phenomenon with a value of -40% (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.

Charge density waves in strongly correlated electron systems

Strong electron correlations are at the heart of many physical phenomena of current interest to the condensed matter community. Here we present a survey of the mechanisms underlying such correlations in charge density wave (CDW) systems, including the current theoretical understanding and experimental evidence for CDW transitions. The focus is on emergent phenomena that result as CDWs interact with other charge or spin states, such as magnetism and superconductivity. In addition to reviewing the CDW mechanisms in 1D, 2D, and 3D systems, we pay particular attention to the prevalence of this state in two particular classes of compounds, the high temperature superconductors (cuprates) and the layered transition metal dichalcogenides. The possibilities for quantum criticality resulting from the competition between magnetic fluctuations and electronic instabilities (CDW, unconventional superconductivity) are also discussed.

Impact of electron-hole correlations on the 1T-TiSe_{2} electronic structure

Several experiments have been performed on 1T-TiSe_{2} in order to identify whether the electronic structure is semimetallic or semiconducting without reaching a consensus. In this Letter, we theoretically study the impact of electron-hole and electron-phonon correlations on the bare semimetallic and semiconducting electronic structure. The resulting electron spectral functions provide a direct comparison of both cases and demonstrate that 1T-TiSe_{2} is of predominant semiconducting character with some spectral weight crossing the Fermi level.

Non-thermal separation of electronic and structural orders in a persisting charge density wave

The simultaneous ordering of different degrees of freedom in complex materials undergoing spontaneous symmetry-breaking transitions often involves intricate couplings that have remained elusive in phenomena as wide ranging as stripe formation, unconventional superconductivity or colossal magnetoresistance. Ultrafast optical, X-ray and electron pulses can elucidate the microscopic interplay between these orders by probing the electronic and lattice dynamics separately, but a simultaneous direct observation of multiple orders on the femtosecond scale has been challenging. Here we show that ultrabroadband terahertz pulses can simultaneously trace the ultrafast evolution of coexisting lattice and electronic orders. For the example of a charge density wave (CDW) in 1T-TiSe2, we demonstrate that two components of the CDW order parameter--excitonic correlations and a periodic lattice distortion (PLD)--respond very differently to 12-fs optical excitation. Even when the excitonic order of the CDW is quenched, the PLD can persist in a coherently excited state. This observation proves that excitonic correlations are not the sole driving force of the CDW transition in 1T-TiSe2, and exemplifies the sort of profound insight that disentangling strongly coupled components of order parameters in the time domain may provide for the understanding of a broad class of phase transitions.

Electronic phase transition and an anomalous ordered phase in Ba2Ti13O22 with 3d1 ions on a triangle-based lattice

We found that Ba(2)Ti(13)O(22) with Ti(3+) (3d(1)) ions on a triangle-based lattice exhibits a phase transition at T(c)~200 K, below which the increase of electrical resistivity and decrease of magnetic susceptibility were observed. Transmission electron microscopy and optical reflectivity measurements indicate that the low-temperature phase of the present compound shares characteristics in common with a charge-density-wave state with remnant carriers, although a commensurate wave vector of the modulation and a linear temperature dependence of the magnetic susceptibility below T(c) suggest an exotic ordered state.

Structural phase transition in IrTe₂: a combined study of optical spectroscopy and band structure calculations

Ir(1-x)Pt(x)Te₂ is an interesting system showing competing phenomenon between structural instability and superconductivity. Due to the large atomic numbers of Ir and Te, the spin-orbital coupling is expected to be strong in the system which may lead to nonconventional superconductivity. We grew single crystal samples of this system and investigated their electronic properties. In particular, we performed optical spectroscopic measurements, in combination with density function calculations, on the undoped compound IrTe₂ in an effort to elucidate the origin of the structural phase transition at 280 K. The measurement revealed a dramatic reconstruction of band structure and a significant reduction of conducting carriers below the phase transition. We elaborate that the transition is not driven by the density wave type instability but caused by the crystal field effect which further splits/separates the energy levels of Te (p(x), p(y)) and Te p(z) bands.

Charge density waves in exfoliated films of van der Waals materials: evolution of Raman spectrum in TiSe2

A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of TiSe(2) crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of TiSe(2) films. It was established that the transition temperature can increase from its bulk value to ~240 K as the thickness of the van der Waals films reduces to the nanometer range. The obtained results are important for the proposed applications of such materials in the collective-state information processing, which require room-temperature operation.

Strongly correlated materials

Strongly correlated materials are profoundly affected by the repulsive electron-electron interaction. This stands in contrast to many commonly used materials such as silicon and aluminum, whose properties are comparatively unaffected by the Coulomb repulsion. Correlated materials often have remarkable properties and transitions between distinct, competing phases with dramatically different electronic and magnetic orders. These rich phenomena are fascinating from the basic science perspective and offer possibilities for technological applications. This article looks at these materials through the lens of research performed at Rice University. Topics examined include: Quantum phase transitions and quantum criticality in "heavy fermion" materials and the iron pnictide high temperature superconductors; computational ab initio methods to examine strongly correlated materials and their interface with analytical theory techniques; layered dichalcogenides as example correlated materials with rich phases (charge density waves, superconductivity, hard ferromagnetism) that may be tuned by composition, pressure, and magnetic field; and nanostructure methods applied to the correlated oxides VO₂ and Fe₃O₄, where metal-insulator transitions can be manipulated by doping at the nanoscale or driving the system out of equilibrium. We conclude with a discussion of the exciting prospects for this class of materials.

Mapping of electron-hole excitations in the charge-density-wave system 1T-TiSe2 using resonant inelastic x-ray scattering

In high-resolution resonant inelastic x-ray scattering at the Ti L edge of the charge-density-wave system 1T-TiSe(2), we observe sharp low energy loss peaks from electron-hole pair excitations developing at low temperature. These excitations are strongly dispersing as a function of the transferred momentum of light. We show that the unoccupied bands close to the Fermi level can effectively be probed in this broadband material. Furthermore, we extract the order parameter of the charge-density-wave phase from temperature-dependent measurements.

Nonthermal melting of a charge density wave in TiSe2

We use time-resolved optical reflectivity and x-ray diffraction with femtosecond resolution to study the dynamics of the structural order parameter of the charge density wave phase in TiSe2. We find that the energy density required to melt the charge density wave nonthermally is substantially lower than that required for thermal suppression and is comparable to the charge density wave condensation energy. This observation, together with the fact that the structural dynamics take place on an extremely fast time scale, supports the exciton condensation mechanism for the charge density wave in TiSe2.

Charge-density wave and superconducting dome in TiSe2 from electron-phonon interaction

At low temperature TiSe2 undergoes a charge-density wave instability. Superconductivity is stabilized either by pressure or by Cu intercalation. We show that the pressure phase diagram of TiSe2 is well described by first-principles calculations. At pressures smaller than 4 GPa charge-density wave ordering occurs, in agreement with experiments. At larger pressures the disappearing of the charge-density wave is due to a stiffening of the short-range force constants and not to the variation of nesting with pressure. Finally, we show that the behavior of T(c) as a function of pressure is entirely determined by the electron-phonon interaction without need of invoking excitonic mechanisms. Our work demonstrates that phase diagrams with competing orders and a superconducting dome are also obtained in the framework of the electron-phonon interaction.

Electronic-structure-driven magnetic ordering in a Kondo semiconductor CeOs2Al10

We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOs(2)Al(10) across an anomalous antiferromagnetic ordering temperature (T(0)) of 29 K, using optical conductivity spectra. The spectra along the a and c axes indicate that an energy gap due to the hybridization between conduction bands and nearly local 4f states, namely the c-f hybridization gap, emerges from a higher temperature continuously across T(0). Along the b axis, on the other hand, another energy gap with a peak at 20 meV becomes visible at 39 K (>T(0)) and fully opens at T(0) because of a charge instability. This result implies that the appearance of the energy gap, as well as the change in the electronic structure along the b axis, induces the antiferromagnetic ordering below T(0).

Chiral charge-density waves

We discovered the chirality of charge-density waves (CDW) in 1T-TiSe₂ by using STM and time-domain optical polarimetry. We found that the CDW intensity becomes Ia₁∶Ia₂∶Ia₃ = 1∶0.7 ± 0.1∶0.5 ± 0.1, where Ia(i) (i=1,2,3) is the amplitude of the tunneling current contributed by the CDWs. There were two states, in which the three intensity peaks of the CDW decrease clockwise and anticlockwise. The chirality in CDW results in the threefold symmetry breaking. Macroscopically, twofold symmetry was indeed observed in optical measurement. We propose the new generalized CDW chirality H(CDW) ≡ q₁·(q₂×q₃), where q(i) are the CDW q vectors, which is independent of the symmetry of components. The nonzero H(CDW)-the triple-q vectors do not exist in an identical plane in the reciprocal space-should induce a real-space chirality in CDW system.

77Se and 63Cu NMR studies of the electronic correlations in CuxTiSe2 (x = 0.05, 0.07)

We report a (77)Se and (63)Cu nuclear magnetic resonance (NMR) investigation on the charge-density-wave (CDW) superconductor Cu(x)TiSe(2) (x = 0.05 and 0.07). At high magnetic fields where superconductivity is suppressed, the temperature dependence of (77)Se and (63)Cu spin-lattice relaxation rates 1/T(1) follow a linear relation. The slope of (77)Se 1/T(1) versus T increases with the Cu doping. This can be described by a modified Korringa relation which suggests the significance of electronic correlations and the Se 4p- and Ti 3d-band contribution to the density of states at the Fermi level in the studied compounds.

A ground state phase diagram of a spinless, extended Falicov-Kimball model on the triangular lattice

Correlated systems with hexagonal layered structures have come to the fore with renewed interest in cobaltates, transition metal dichalcogenides and GdI(2). While superconductivity, unusual metal and possible exotic states (prevented from long-range order by strong local fluctuations) appear to come from frustration and correlation working in tandem in such systems, they freeze at a lower temperature to crystalline states. The underlying effective Hamiltonian in some of these systems is believed to be the Falicov-Kimball model and therefore, a thorough study of the ground state of this model and its extended version on a non-bipartite lattice is important. Using a Monte Carlo search algorithm, we identify a large number of different possible ground states with charge order as well as valence and metal-insulator transitions. Such competing states, close in energy, give rise to complex charge order and other broken symmetry structures as well as the phase segregations observed in the ground state of these systems.

1T-TiSe2: semimetal or semiconductor?

Even though the semimetallic behavior of 1T-TiSe2 seemed to be well established by band structure calculations and photoemission results, this conclusion has been challenged recently. Two high-resolution photoemission investigations deduced semiconducting behavior, however with a very small band gap. Such conclusion from photoemission is afflicted, in principle, by the problem of determining an unoccupied conduction band by photoemission. This problem is solved here by the idea of H2O adsorption onto the van der Waals-like surface, causing a distinct bending of the bands and resulting in a filled lowest conduction band. The detailed analysis yields undoubtedly semiconducting behavior for 1T-TiSe2 and interesting properties of a semiconductor with extremely small band gap.

Quantum and classical mode softening near the charge-density-wave-superconductor transition of CuxTiSe2

Temperature- and x-dependent Raman scattering studies of the charge-density-wave (CDW) amplitude modes in Cu(x)TiSe(2) show that the amplitude mode frequency omega(0) exhibits identical power-law scaling with the reduced temperature T/T(CDW) and the reduced Cu content x/x(c), i.e., omega(0) approximately (1-p)(0.15) for p=T/T(CDW) or x/x(c), suggesting that mode softening is independent of the control parameter used to approach the CDW transition. We provide evidence that x-dependent mode softening in Cu(x)TiSe(2) is associated with the reduction of the electron-phonon coupling constant, and that x-dependent "quantum" (T approximately 0) mode softening suggests the presence of a quantum critical point within the superconductor phase of Cu(x)TiSe(2).

Anomalous Metallic State of Cu0.07TiSe2: an optical spectroscopy study

We report an optical spectroscopy study on the newly discovered superconductor Cu0.07TiSe2. Consistent with the development from a semimetal or semiconductor with a very small indirect energy gap upon doping TiSe2, it is found that the compound has a low carrier density. Most remarkably, the study reveals a substantial shift of the screened plasma edge in reflectance towards high energy with decreasing temperature. This phenomenon, rarely seen in metals, indicates either a sizable increase of the conducting carrier concentration or/and a decrease of the effective mass of carriers with reducing temperature. We attribute the shift primarily to the latter effect.

Evolution of the electronic structure of 1T-Cu(x)TiSe(2)

The electronic structure of a new charge-density-wave system or superconductor, 1T-Cu(x)TiSe(2), has been studied by photoemission spectroscopy. A correlated semiconductor band structure is revealed for the undoped case, which resolves a long-standing controversy in the system. With Cu doping, the charge-density wave is suppressed by the raising of the chemical potential, while the superconductivity is enhanced by the enhancement of the density of states, and possibly suppressed at higher doping by the strong scattering.