Silicon carbide X-ray beam position monitors for synchrotron applications

SiC free-standing membrane for X-ray intensity monitoring in synchrotron radiation beamlines

For many synchrotron radiation experiments, it is critical to perform continuous, real-time monitoring of the X-ray flux for normalization and stabilization purposes. Traditional transmission-mode monitors included metal mesh foils and ionization chambers, which suffered from low signal stability and size constraints. Solid-state detectors are now considered superior alternatives for many applications, offering appealing features like compactness and signal stability. However, silicon-based detectors suffer from poor radiation resistance, and diamond detectors are limited in scalability and are expensive to produce. Silicon carbide (SiC) has recently emerged as an alternative to both materials, offering a high-quality mature semiconductor with high thermal conductivity and radiation hardness. This study focuses on a systematic exploration of the SiC `free-standing membrane' devices developed by SenSiC GmbH. In particular, we performed in-depth sensor-response analysis with photon energies ranging from tender (1.75 keV) to hard (10 keV) X-rays at the Four-Crystal Monochromator beamline in the PTB laboratory at the synchrotron radiation facility BESSY II, studying uniformity of transmission and responsivity compared with the state-of-the-art beam monitors. Furthermore, we theoretically evaluated the expected signal in different regions of the sensors, also taking into account the effect of charge diffusion from the SiC substrate in the case of the not-carved region.

In situ/operando method for energy stability measurement of synchrotron radiation

A novel in situ/operando method is introduced to measure the photon beam stability of synchrotron radiation based on orthogonal diffraction imaging of a Laue crystal/analyzer, which can decouple the energy/wavelength and Bragg angle of the photon beam using the dispersion effect in the diffraction process. The method was used to measure the energy jitter and drift of the photon beam on BL09B and BL16U at the Shanghai Synchrotron Radiation Facility. The experimental results show that this method can provide a fast way to measure the beam stability of different light sources including bending magnet and undulator with meV-level energy resolution and ms-level time response.

Comprehensive dosimetric characterization of novel silicon carbide detectors with UHDR electron beams for FLASH radiotherapy

BACKGROUND

The extremely fast delivery of doses with ultra high dose rate (UHDR) beams necessitates the investigation of novel approaches for real-time dosimetry and beam monitoring. This aspect is fundamental in the perspective of the clinical application of FLASH radiotherapy (FLASH-RT), as conventional dosimeters tend to saturate at such extreme dose rates.

PURPOSE

This study aims to experimentally characterize newly developed silicon carbide (SiC) detectors of various active volumes at UHDRs and systematically assesses their response to establish their suitability for dosimetry in FLASH-RT.

METHODS

SiC PiN junction detectors, recently realized and provided by STLab company, with different active areas (ranging from 4.5 to 10 mm2) and thicknesses (10-20 µm), were irradiated using 9 MeV UHDR pulsed electron beams accelerated by the ElectronFLASH linac at the Centro Pisano for FLASH Radiotherapy (CPFR). The linearity of the SiC response as a function of the delivered dose per pulse (DPP), which in turn corresponds to a specific instantaneous dose rate, was studied under various experimental conditions by measuring the produced charge within the SiC active layer with an electrometer. Due to the extremely high peak currents, an external customized electronic RC circuit was built and used in conjunction with the electrometer to avoid saturation.

RESULTS

The study revealed a linear response for the different SiC detectors employed up to 21 Gy/pulse for SiC detectors with 4.5 mm2/10 µm active area and thickness. These values correspond to a maximum instantaneous dose rate of 5.5 MGy/s and are indicative of the maximum achievable monitored DPP and instantaneous dose rate of the linac used during the measurements.

CONCLUSIONS

The results clearly demonstrate that the developed devices exhibit a dose-rate independent response even under extreme instantaneous dose rates and dose per pulse values. A systematic study of the SiC response was also performed as a function of the applied voltage bias, demonstrating the reliability of these dosimeters with UHDR also without any applied voltage. This demonstrates the great potential of SiC detectors for accurate dosimetry in the context of FLASH-RT.

Single-Ion Counting with an Ultra-Thin-Membrane Silicon Carbide Sensor

In recent times, ion implantation has received increasing interest for novel applications related to deterministic material doping on the nanoscale, primarily for the fabrication of solid-state quantum devices. For such applications, precise information concerning the number of implanted ions and their final position within the implanted sample is crucial. In this work, we present an innovative method for the detection of single ions of MeV energy by using a sub-micrometer ultra-thin silicon carbide sensor operated as an in-beam counter of transmitted ions. The SiC sensor signals, when compared to a Passivated Implanted Planar Silicon detector signal, exhibited a 96.5% ion-detection confidence, demonstrating that the membrane sensors can be utilized for high-fidelity ion counting. Furthermore, we assessed the angular straggling of transmitted ions due to the interaction with the SiC sensor, employing the scanning knife-edge method of a focused ion microbeam. The lateral dimension of the ion beam with and without the membrane sensor was compared to the SRIM calculations. The results were used to discuss the potential of such experimental geometry in deterministic ion-implantation schemes as well as other applications.

A direct experimental comparison of single-crystal CVD diamond and silicon carbide X-ray beam position monitors

Single-crystal chemical vapour deposition (CVD) diamond detectors are an established transmissive synchrotron beamline diagnostic instrument used for beam position and beam intensity monitoring. A recently commercialized alternative is silicon carbide (4H-SiC) devices. These have the potential to provide the same diagnostic information as commercially available single-crystal CVD diamond X-ray beam position monitors, but with a much larger transmissive aperture. At Diamond Light Source an experimental comparison of the performance of single-crystal CVD diamond and 4H-SiC X-ray beam position monitors has been carried out. A quantitative comparison of their performance is presented in this paper. The single-crystal diamond and 4H-SiC beam position monitors were installed in-line along the synchrotron X-ray beam path enabling synchronous measurements at kilohertz rates of the beam motion from both devices. The results of several tests of the two position monitors' performance are presented: comparing signal uniformity across the surface of the detectors, comparing kHz intensity measurements, and comparing kHz beam position measurements from the detectors. Each test is performed with a range of applied external bias voltages. A discussion of the benefits and limitations of 4H-SiC and single-crystal CVD diamond detectors is included.

Synchrotron radiation stability with meV-level energy resolution: in situ characterization

One of the most critical parameters in synchrotron radiation (SR) experiments is the stability of the photon energy, which is primarily affected by the stability of the light source and the optical elements in the beamline. Due to the characteristics of SR and the use of dispersive elements such as monochromators in the beamline, the change of the beam position is usually accompanied by the change of energy and flux, while most traditional beam monitoring methods are based on the direct or indirect measurement of total flux, and are therefore sensitive to the beam position only, having no energy resolution. In this paper, an in situ monitoring system has been designed to measure the short-term (jitter) and long-term (drift) characteristics of the energy variation in the SR beamline. The system consists of a double-crystal monochromator, an orthogonal analysis crystal, and an X-ray imaging detector, which could decouple the angle and energy spread of the photon beam based on the dispersion effect in Bragg diffraction. The time response and the energy resolution of the system could reach millisecond and millielectron volt level, respectively.

Emerging SiC Applications beyond Power Electronic Devices

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations

Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore the radiation tolerance of SiC sensors to multiple damaging processes, both at room and high temperature, we used the Ion Microprobe Chamber installed at the Ruđer Bošković Institute (Zagreb, Croatia), which made it possible to expose small areas within the same device to different ion beams, thus evaluating and comparing effects within a single device. The sensors tested, developed jointly by STLab and SenSiC, are PIN diodes with ultrathin free-standing membranes, realized by means of a recently developed doping-selective electrochemical etching. In this work, we report on the changes of the charge transport properties, specifically in terms of the charge collection efficiency (CCE), with respect to multiple localized proton irradiations, performed at both room temperature (RT) and 500 °C.

Silicon Carbide detectors: a concrete perspective for nuclear-astrophysics experiments

Silicon Carbide, also known as carborundum, is one of the most interesting materials for the production of detection systems. This contribution presents an overview of the results of SiCILIA activities, an R&D totally funded by INFN. Detector manufacturing and the generalperformance are discussed.

LENS - Laser Energy for Nuclear Science facility @ LNS

A dedicated laboratory at Laboratori Nazionali del Sud (LNS) of Catania was realized with the aim to investigate nuclear reactions of astrophysical interest in plasma environment. In this contribution, the facility LENS (Laser Energy for Nuclear Science), useful to study laser- produced plasmas, will be described and some results will be presented.

Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication process, monitoring the strain of the suspended SiC thin-films is still challenging. However, 3C-SiC membranes on silicon (Si) substrates have been demonstrated, but due to the low quality of the SiC/Si heteroepitaxy, high levels of residual strains were always observed. In order to achieve promising self-standing films with low residual stress, an alternative micromachining technique based on electrochemical etching of high quality homoepitaxy 4H-SiC layers was evaluated. This work is dedicated to the determination of their mechanical properties and more specifically, to the characterization of a 4H-SiC freestanding film with a circular shape. An inverse problem method was implemented, where experimental results obtained from bulge test are fitted with theoretical static load-deflection curves of the stressed membrane. To assess data validity, the dynamic behavior of the membrane was also investigated: Experimentally, by means of laser Doppler vibrometry (LDV) and theoretically, by means of finite element computations. The two methods provided very similar results since one obtained a Young’s modulus of 410 GPa and a residual stress value of 41 MPa from bulge test against 400 GPa and 30 MPa for the LDV analysis. The determined Young’s modulus is in good agreement with literature values. Moreover, residual stress values demonstrate that the fabrication of low-stressed SiC films is achievable thanks to the micromachining process developed.