Quantitative phase-mode electrostatic force microscopy on silicon oxide nanostructures

Electromechanical Response of Saddle Points in Twisted hBN Moiré Superlattices

In twisted layered materials (t-LMs), an interlayer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental investigation of these features is still lacking. Here, we use piezo force microscopy to probe the electromechanical behavior of twisted hexagonal boron nitride (t-hBN). For parallel stacking alignment of t-hBN, we reveal very narrow (width ∼ 10 nm) saddle point in-plane polarizations, which we also measure in the antiparallel configuration. These localized polarizations can still be found on a multiply stacked t-hBN structure, determining the formation of a double moiré. Our findings imply that polarizations in t-hBN do not only point in the out-of-plane direction but also show an in-plane component, giving rise to a much more complex 3D polarization field.

Thickness-Dependent Relative Dielectric Constant of Organic Ultrathin Films

In formulas employed for analysis of organic electronic devices, the relative dielectric constant value of the semiconductor organic films is often assumed rather than measured, even though it is a fundamental parameter for a correct interpretation. This is particularly true for ultrathin films made of discrete molecular layers. In this work, Spectroscopy Ellipsometry and Scanning Capacitance Microscopy were used to study thin films made of N,N'-bis(n-octyl)-x:y,dicyanoperylene-3,4 : 9,10-bis(dicarboximide). The relative dielectric constant presents a non-monotonic trend with thickness: it is equal to 2.1 for one molecular layer, saturating at 3.2 for increasing thickness. This maximum value, equivalent to the bulk one, occurs when the coverage is in between the third to the fourth layer. In this range, the growth switches from a Frank-Van der Merwe (2D growth) to a Volmer-Weber mode (3D growth); in addition, the molecular configuration assumes a bent/distorted geometry with respect to the initial edge-on one. These results establish a morphological dependence of the dielectric constant, especially in the vicinity of the substrate interface, that disappears at a certain distance from it.

Native Silicon Oxide Properties Determined by Doping

The physico-chemical properties of native oxide layers, spontaneously forming on crystalline Si wafers in air, can be strictly correlated to the dopant type and doping level. In particular, our investigations focused on oxide layers formed upon air exposure in a clean room after Si wafer production, with dopant concentration levels from ≈1013 to ≈1019 cm-3. In order to determine these correlations, we studied the surface, the oxide bulk, and its interface with Si. The surface was investigated using the contact angle, thermal desorption, and atomic force microscopy measurements which provided information on surface energy, cleanliness, and morphology, respectively. Thickness was measured with ellipsometry and chemical composition with X-ray photoemission spectroscopy. Electrostatic charges within the oxide layer and at the Si interface were studied with Kelvin probe microscopy. Some properties such as thickness, showed an abrupt change, while others, including silanol concentration and Si intermediate-oxidation states, presented maxima at a critical doping concentration of ≈2.1 × 1015 cm-3. Additionally, two electrostatic contributions were found to originate from silanols present on the surface and the net charge distributed within the oxide layer. Lastly, surface roughness was also found to depend upon dopant concentration, showing a minimum at the same critical dopant concentration. These findings were reproduced for oxide layers regrown in a clean room after chemical etching of the native ones.

Comparing the performance of single and multifrequency Kelvin probe force microscopy techniques in air and water

In this paper, we derive and present quantitative expressions governing the performance of single and multifrequency Kelvin probe force microscopy (KPFM) techniques in both air and water. Metrics such as minimum detectable contact potential difference, minimum required AC bias, and signal-to-noise ratio are compared and contrasted both off resonance and utilizing the first two eigenmodes of the cantilever. These comparisons allow the reader to quickly and quantitatively identify the parameters for the best performance for a given KPFM-based experiment in a given environment. Furthermore, we apply these performance metrics in the identification of KPFM-based modes that are most suitable for operation in liquid environments where bias application can lead to unwanted electrochemical reactions. We conclude that open-loop multifrequency KPFM modes operated with the first harmonic of the electrostatic response on the first eigenmode offer the best performance in liquid environments whilst needing the smallest AC bias for operation.

A flexible electrostatic nanogenerator and self-powered capacitive sensor based on electrospun polystyrene mats and graphene oxide films

Electrostatic nanogenerators or capacitive sensors that leverage electrostatic induction for power generation or sensing, has attracted significant interests due to their simple structure, ease of fabrication, and high device stability. However, in order for such devices to work, an additional power source or a post-charging process is necessary to activate the electrostatic effect. In this work, an electrostatic nanogenerator is fabricated using electrospun polystyrene (PS) mats and dip-coated graphene oxide (GO) films as the self-charged components. The electret performances of the PS mats and GO films are characterized via the electrostatic force microscopy phase shift and surface potential measurements. With a multilayer device structure that consists of top electrodes/GO films/spacer/electrospun PS mats/bottom electrodes, the resultant device acts as an electrostatic generator that operates in the noncontact mode. The nanogenerator can output a peak voltage of ca. 6.41 V and a peak current of ca. 6.57 nA at a rate of 1 Hz of mechanical compression, and with no attenuation of electrical outputs even after 50 000 cycles over a 13 h period. Furthermore, this as-prepared device is also capable of serving as a self-powered capacitive sensor for detection of tiny mechanical impacts and measurement of human finger bending. This results of this work provides a new avenue to easily fabricate electrostatic nanogenerators with high durability and self-powered capacitive sensors for the detection of small impacts.

Synthetic Data in Quantitative Scanning Probe Microscopy

Synthetic data are of increasing importance in nanometrology. They can be used for development of data processing methods, analysis of uncertainties and estimation of various measurement artefacts. In this paper we review methods used for their generation and the applications of synthetic data in scanning probe microscopy, focusing on their principles, performance, and applicability. We illustrate the benefits of using synthetic data on different tasks related to development of better scanning approaches and related to estimation of reliability of data processing methods. We demonstrate how the synthetic data can be used to analyse systematic errors that are common to scanning probe microscopy methods, either related to the measurement principle or to the typical data processing paths.