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Mondal N, Yadav K, Hasina D, Mukherjee D. Interfacial Strain-Driven Large Topological Hall Effects in Supermalloy Thin Films with Noncoplanar Spin Textures. ACS APPLIED MATERIALS & INTERFACES 2025; 17:8692-8705. [PMID: 39853157 DOI: 10.1021/acsami.4c21396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2025]
Abstract
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and Al2O3 (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells. Magnetic force microscopy showed the presence of skyrmion-like features, which may arise from strain-induced spin texturing in the films. Magneto-optic Kerr effect confirmed a 4-fold magnetic anisotropy in the NiFeMo/MgO (100) film which exhibited a more pronounced topological Hall effect compared to that in the NiFeMo/Al2O3 (0001) film. We envisage that the strain-induced disruption of the centrosymmetry in the NiFeMo films possibly leads to Dzyaloshinskii-Moriya (DM) interactions within the spins. This gives rise to the skyrmion-like spin textures and notable topological Hall effects near room temperature hitherto unobserved in NiFeMo thin films. Theoretical simulations based on DM interactions strongly correlate the experimental results and corroborate with the presence of skyrmion-like spin textures in the films. The modulation of topology and magnetism in NiFeMo thin films through strain engineering may provide useful direction for the pursuit of quantum Hall effect based spintronic devices.
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Affiliation(s)
- Nasiruddin Mondal
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
| | - Kusampal Yadav
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
| | - Dilruba Hasina
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
| | - Devajyoti Mukherjee
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
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2
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Zheng J, Zhang J, Cheng S, Shi W, Wang M, Li Z, Chen Y, Hu F, Shen B, Chen Y, Zhu T, Sun J. Room-Temperature Ferromagnetism with Strong Spin-Orbit Coupling Achieved in CaRuO 3 Interfacial Phase via Magnetic Proximity Effect. ACS NANO 2024; 18:32625-32634. [PMID: 39527839 PMCID: PMC11603879 DOI: 10.1021/acsnano.4c10014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2024] [Revised: 10/12/2024] [Accepted: 10/18/2024] [Indexed: 11/16/2024]
Abstract
Recently, theoretical and experimental research predicted that ferromagnets with strong spin-orbit coupling (SOC) could serve as spin sources with dramatically enhanced spin-orbit torque (SOT) efficiency due to the combination of spin Hall effect and anomalous Hall effect (AHE), presenting potential advantages over conventional nonmagnetic heavy metals. However, materials with a strong SOC and room-temperature ferromagnetism are rare. Here, we report on a ferromagnetic (FM) interfacial phase with Curie temperature exceeding 300 K in the heavy transition-metal oxide CaRuO3, in proximity to La0.67Sr0.33MnO3. Electron energy loss and polarized neutron reflectometry spectra reveal the strong charge transfer from Ru to Mn at the interface, triggering antiferromagnetic exchange interactions between interfacial Ru/Mn ions and thus transferring magnetic order from La0.67Sr0.33MnO3 to CaRuO3. An obvious advantage of such interfacial phase is the enhanced anomalous Hall effect at temperatures from 150 to 300 K. Compared to the most promising room-temperature ferromagnetic oxide La0.67Sr0.33MnO3, the anomalous Hall conductivity σxyAHE (or anomalous Hall angle θH) of CaRuO3/La0.67Sr0.33MnO3 superlattices is increased by 30 (or 31) times at 150 K and 10 (or 3) times at 300 K. This work demonstrates a special approach for inducing ferromagnetism in heavy transition-metal oxides with strong SOC, offering promising prospects for all-oxide-based spintronic applications.
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Affiliation(s)
- Jie Zheng
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Jing Zhang
- Songshan
Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Sheng Cheng
- Spallation
Neutron Source Science Center, Dongguan 523803, China
| | - Wenxiao Shi
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Mengqin Wang
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Zhe Li
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Yunzhong Chen
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Fengxia Hu
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
- Songshan
Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Baogen Shen
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
- Ningbo
Institute of Materials Technology & Engineering, Chinese Academy
of Sciences, Ningbo, Zhejiang 315201, China
- Ganjiang
Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, China
| | - Yuansha Chen
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Tao Zhu
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- Spallation
Neutron Source Science Center, Dongguan 523803, China
| | - Jirong Sun
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
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3
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Men E, Li D, Zhang H, Chen J, Qiao Z, Wei L, Wang Z, Xi C, Song D, Li Y, Jeen H, Chen K, Zhu H, Hao L. An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures. Nat Commun 2024; 15:8427. [PMID: 39341802 PMCID: PMC11439077 DOI: 10.1038/s41467-024-52616-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 09/12/2024] [Indexed: 10/01/2024] Open
Abstract
All-insulator heterostructures with an emerging metallicity are at the forefront of material science, which typically contain at least one band insulator while it is not necessary to be. Here we show emergent phenomena in a series of all-correlated-insulator heterostructures that composed of insulating CaIrO3 and insulating La0.67Sr0.33MnO3. We observed an intriguing insulator-to-metal transition, that depends delicately on the thickness of the iridate component. The simultaneous enhancements of magnetization, electric conductivity, and magnetoresistance effect indicate a percolation-type nature of the insulator-to-metal transition, with the percolation threshold can be reached at an exceptionally low volume fraction of the iridate. Such a drastic transition is induced by an interfacial charge transfer, which interestingly alters the electronic and crystalline structures of the bulk region rather than the limited ultrathin interface. We further showcased the central role of effective correlation in modulating the insulator-to-metal transition, by demonstrating that the critical thickness of iridate for triggering the metallic state can be systematically reduced down to a single unit-cell layer.
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Affiliation(s)
- Enyang Men
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Deyang Li
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Haiyang Zhang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Jingxin Chen
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Zhihan Qiao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Long Wei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
| | - Zhaosheng Wang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
| | - Chuanying Xi
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
| | - Dongsheng Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, China
| | - Yuhan Li
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, China
| | - Hyoungjeen Jeen
- Department of Physics, Pusan National University, Busan, South Korea
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China.
| | - Hong Zhu
- Department of Physics, University of Science and Technology of China, Hefei, China.
| | - Lin Hao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China.
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4
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Yu J, Liu Y, Ke Y, Su J, Cao J, Li Z, Sun B, Bai H, Wang W. Observation of Topological Hall Effect in a Chemically Complex Alloy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308415. [PMID: 38265890 DOI: 10.1002/adma.202308415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 12/28/2023] [Indexed: 01/26/2024]
Abstract
The topological Hall effect (THE) is the transport response of chiral spin textures and thus can serve as a powerful probe for detecting and understanding these unconventional magnetic orders. So far, the THE is only observed in either noncentrosymmetric systems where spin chirality is stabilized by Dzyaloshinskii-Moriya interactions, or triangular-lattice magnets with Ruderman-Kittel-Kasuya-Yosida-type interactions. Here, a pronounced THE is observed in a Fe-Co-Ni-Mn chemically complex alloy with a simple face-centered cubic (fcc) structure across a wide range of temperatures and magnetic fields. The alloy is shown to have a strong magnetic frustration owing to the random occupation of magnetic atoms on the close-packed fcc lattice and the direct Heisenberg exchange interaction among atoms, as evidenced by the appearance of a reentrant spin glass state in the low-temperature regime and the first principles calculations. Consequently, THE is attributed to the nonvanishing spin chirality created by strong spin frustration under the external magnetic field, which is distinct from the mechanism responsible for the skyrmion systems, as well as geometrically frustrated magnets.
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Affiliation(s)
- Jihao Yu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuying Liu
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
| | - Yubin Ke
- Spallation Neutron Source Science Center, Dongguan, 523803, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiaqi Su
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
| | - Jingshan Cao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zian Li
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
| | - Baoan Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haiyang Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weihua Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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5
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Wang M, Zhu T, Bai H, Yin Z, Xu H, Shi W, Li Z, Zheng J, Gan Y, Chen Y, Shen B, Chen Y, Zhang Q, Hu F, Sun JR. Layered Ferromagnetic Structure Caused by the Proximity Effect and Interlayer Charge Transfer for LaNiO 3/LaMnO 3 Superlattices. NANO LETTERS 2024; 24:1122-1129. [PMID: 38230636 DOI: 10.1021/acs.nanolett.3c03658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Magnetic proximity-induced magnetism in paramagnetic LaNiO3 (LNO) has spurred intensive investigations in the past decade. However, no consensus has been reached so far regarding the magnetic order in LNO layers in relevant heterostructures. This paper reports a layered ferromagnetic structure for the (111)-oriented LNO/LaMnO3 (LMO) superlattices. It is found that each period of the superlattice consisted of an insulating LNO-interfacial phase (five unit cells in thickness, ∼1.1 nm), a metallic LNO-inner phase, a poorly conductive LMO-interfacial phase (three unit cells in thickness, ∼0.7 nm), and an insulating LMO-inner phase. All four of these phases are ferromagnetic, showing different magnetizations. The Mn-to-Ni interlayer charge transfer is responsible for the emergence of a layered magnetic structure, which may cause magnetic interaction across the LNO/LMO interface and double exchange within the LMO-interfacial layer. This work indicates that the proximity effect is an effective means of manipulating the magnetic state and associated properties of complex oxides.
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Affiliation(s)
- Mengqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Zhuo Yin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hao Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhe Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Zheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yulin Gan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Ji-Rong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Materials Science & Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China
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Fuentes V, Balcells L, Konstantinović Z, Martínez B, Pomar A. Evaluation of Sputtering Processes in Strontium Iridate Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:242. [PMID: 38334512 PMCID: PMC10856326 DOI: 10.3390/nano14030242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Revised: 01/19/2024] [Accepted: 01/20/2024] [Indexed: 02/10/2024]
Abstract
The growth of epitaxial thin films from the Ruddlesden-Popper series of strontium iridates by magnetron sputtering is analyzed. It was found that, even using a non-stoichiometric target, the films formed under various conditions were consistently of the perovskite-like n = ∞ SrIrO3 phase, with no evidence of other RP series phases. A detailed inspection of the temperature-oxygen phase diagram underscored that kinetics mechanisms prevail over thermodynamics considerations. The analysis of the angular distribution of sputtered iridium and strontium species indicated clearly different spatial distribution patterns. Additionally, significant backsputtering was detected at elevated temperatures. Thus, it is assumed that the interplay between these two kinetic phenomena is at the origin of the preferential nucleation of the SrIrO3 phase. In addition, strategies for controlling cation stoichiometry off-axis have also been explored. Finally, the long-term stability of the films has been demonstrated.
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Affiliation(s)
- Víctor Fuentes
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Lluis Balcells
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Zorica Konstantinović
- Center for Solid State Physics and New Materials, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
| | - Benjamín Martínez
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Alberto Pomar
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
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7
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Chen X, Wang H, Li M, Hao Q, Cai M, Dai H, Chen H, Xing Y, Liu J, Wang X, Zhai T, Zhou X, Han J. Manipulation and Optical Detection of Artificial Topological Phenomena in 2D Van der Waals Fe 5 GeTe 2 /MnPS 3 Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207617. [PMID: 37327250 PMCID: PMC10401167 DOI: 10.1002/advs.202207617] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 04/20/2023] [Indexed: 06/18/2023]
Abstract
2D ferromagnet is a good platform to investigate topological effects and spintronic devices owing to its rich spin structures and excellent external-field tunability. The appearance of the topological Hall Effect (THE) is often regarded as an important sign of the generation of chiral spin textures, like magnetic vortexes or skyrmions. Here, interface engineering and an in-plane current are used to modulate the magnetic properties of the nearly room-temperature 2D ferromagnet Fe5 GeTe2 . An artificial topology phenomenon is observed in the Fe5 GeTe2 /MnPS3 heterostructure by using both anomalous Hall Effect and reflective magnetic circular dichroism (RMCD) measurements. Through tuning the applied current and the RMCD laser wavelength, the amplitude of the humps and dips observed in the hysteresis loops can be modulated accordingly. Magnetic field-dependent hysteresis loops demonstrate that the observed artificial topological phenomena are induced by the generation and annihilation of the magnetic domains. This work provides an optical method for investigating the topological-like effects in magnetic structures and proposes an effective way to modulate the magnetic properties of magnetic materials, which is important for developing magnetic and spintronic devices in van der Waals magnetic materials.
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Affiliation(s)
- Xiaodie Chen
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Manshi Li
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Qinghua Hao
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Menghao Cai
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Hongwei Dai
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Hongjing Chen
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yuntong Xing
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jie Liu
- State Key Laboratory of Materials Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xia Wang
- School of Elementary EducationWuhan City Polytechnic CollegeWuhan430074P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jun‐Bo Han
- Wuhan National High Magnetic Field Center and Department of PhysicsHuazhong University of Science and TechnologyWuhan430074P. R. China
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8
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Hao L, Yi D, Wang M, Liu J, Yu P. Emergent quantum phenomena in atomically engineered iridate heterostructures. FUNDAMENTAL RESEARCH 2023; 3:313-321. [PMID: 38933764 PMCID: PMC11197666 DOI: 10.1016/j.fmre.2022.09.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 09/22/2022] [Accepted: 09/25/2022] [Indexed: 11/06/2022] Open
Abstract
Over the last few years, researches in iridates have developed into an exciting field with the discovery of numerous emergent phenomena, interesting physics, and intriguing functionalities. Among the studies, iridate-based artificial structures play a crucial role owing to their extreme flexibility and tunability in lattice symmetry, chemical composition, and crystal dimensionality. In this article, we present an overview of the recent progress regarding iridate-based artificial structures. We first explicitly introduce several essential concepts in iridates. Then, we illustrate important findings on representative SrIrO3/SrTiO3 superlattices, heterostructures comprised of SrIrO3 and magnetic oxides, and their response to external electric-field stimuli. Finally, we comment on existing problems and promising future directions in this exciting field.
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Affiliation(s)
- Lin Hao
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Di Yi
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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9
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MacManus-Driscoll JL, Wu R, Li W. Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges. MATERIALS HORIZONS 2023; 10:1060-1086. [PMID: 36815609 PMCID: PMC10068909 DOI: 10.1039/d2mh01527g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.
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Affiliation(s)
| | - Rui Wu
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- Spin-X Institute, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Weiwei Li
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
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10
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Zhang C, Liu C, Zhang J, Yuan Y, Wen Y, Li Y, Zheng D, Zhang Q, Hou Z, Yin G, Liu K, Peng Y, Zhang XX. Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205967. [PMID: 36245330 DOI: 10.1002/adma.202205967] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Revised: 10/06/2022] [Indexed: 06/16/2023]
Abstract
Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr1+ x Te2 with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr1.53 Te2 with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.
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Affiliation(s)
- Chenhui Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Junwei Zhang
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Youyou Yuan
- Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Qiang Zhang
- Core Technology Platforms, New York University Abu Dhabi, Abu Dhabi, 129188, United Arab Emirates
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Gen Yin
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | - Kai Liu
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | - Yong Peng
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Xi-Xiang Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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11
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Liu J, Zhang X, Ji Y, Gao X, Wu J, Zhang M, Li L, Liu X, Yan W, Yao T, Yin Y, Wang L, Guo H, Cheng G, Wang Z, Gao P, Wang Y, Chen K, Liao Z. Controllable Itinerant Ferromagnetism in Weakly Correlated 5d SrIrO 3. J Phys Chem Lett 2022; 13:11946-11954. [PMID: 36534070 DOI: 10.1021/acs.jpclett.2c03313] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The weakly correlated nature of 5d oxide SrIrO3 determines its rare ferromagnetism, and the control of its magnetic order is even less studied. Tailoring structure distortion is currently a main route to tune the magnetic order of 5d iridates, but only for the spatially confined insulating counterparts. Here, we have realized ferromagnetic order in metallic SrIrO3 by construction of SrIrO3/ferromagnetic-insulator (LaCoO3) superlattices, which reveal a giant coercivity of ∼10 T and saturation field of ∼25 T with strong perpendicular magnetic anisotropy. The Curie temperature of SrIrO3 can be controlled by engineering interface charge transfer, which is confirmed by Hall effect measurements collaborating with EELS and XAS. Besides, the noncoplanar spin texture is captured, which is caused by interfacial Dzyaloshinskii-Moriya interactions as well. These results indicate controllable itinerant ferromagnetism and an emergent topological magnetic state in strong spin-orbit coupled semimetal SrIrO3, showing great potential to develop efficient spintronic devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xinxin Zhang
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaokang Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Tao Yao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei230026, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai200433, China
| | - Guanglei Cheng
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei230026, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yilin Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
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12
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Li F, Guan Y, Wang P, Wang Z, Fang C, Gu K, Parkin SS. All-electrical reading and writing of spin chirality. SCIENCE ADVANCES 2022; 8:eadd6984. [PMID: 36516254 PMCID: PMC11804164 DOI: 10.1126/sciadv.add6984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 11/14/2022] [Indexed: 06/17/2023]
Abstract
Spintronics promises potential data encoding and computing technologies. Spin chirality plays a very important role in the properties of many topological and noncollinear magnetic materials. Here, we propose the all-electrical detection and manipulation of spin chirality in insulating chiral antiferromagnets. We demonstrate that the spin chirality in insulating epitaxial films of TbMnO3 can be read electrically via the spin Seebeck effect and can be switched by electric fields via the multiferroic coupling of the spin chirality to the ferroelectric polarization. Moreover, multivalued states of the spin chirality can be realized by the combined application of electric and magnetic fields. Our results are a path toward next-generation, low-energy consumption memory and logic devices that rely on spin chirality.
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Affiliation(s)
- Fan Li
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Yicheng Guan
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Peng Wang
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Zhong Wang
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Chi Fang
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Ke Gu
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Stuart S. P. Parkin
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
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13
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Ren Z, Lao B, Zheng X, Liao L, Lu Z, Li S, Yang Y, Cao B, Wen L, Zhao K, Wang L, Bai X, Hao X, Liao Z, Wang Z, Li RW. Emergence of Insulating Ferrimagnetism and Perpendicular Magnetic Anisotropy in 3d-5d Perovskite Oxide Composite Films for Insulator Spintronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:15407-15414. [PMID: 35324157 DOI: 10.1021/acsami.2c01849] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, rendering them highly desirable to develop new material platforms. Here, we report the epitaxial growth of La2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with different crystalline orientations fabricated by a sequential two-target ablation process by pulsed laser deposition. The LSMIO films exhibit high crystalline quality with a homogeneous mixture of LSMO and SIO at an atomic level. Ferrimagnetic and insulating transport characteristics are observed, with the temperature-dependent electric resistivity well fitted by the Mott variable-range-hopping model. Moreover, the LSMIO films show strong PMA. By further constructing all-perovskite-oxide heterostructures of the ferrimagnetic insulator LSMIO and a strong spin-orbital-coupled SIO layer, pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Hall effect (SH-AHE) were observed. These results illustrate the potential application of the ferrimagnetic insulator LSMIO in developing all-oxide ultralow-dissipation spintronic devices.
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Affiliation(s)
- Zeliang Ren
- Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, Anhui, China
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Bin Lao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xuan Zheng
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- New Materials Institute, University of Nottingham Ningbo China, Ningbo 315100, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zengxing Lu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Sheng Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yongjie Yang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Bingshan Cao
- Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, Anhui, China
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Lijie Wen
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Key Laboratory of Applied Chemistry, College of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, China
| | - Kenan Zhao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Lifen Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xianfeng Hao
- Key Laboratory of Applied Chemistry, College of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, Anhui, China
| | - Zhiming Wang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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14
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Zhang J, Pai YY, Lapano J, Mazza AR, Lee HN, Moore RG, Lawrie BJ, Ward TZ, Eres G, Cooper VR, Brahlek M. Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100087] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
Affiliation(s)
- Jie Zhang
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Yun-Yi Pai
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Jason Lapano
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Alessandro R. Mazza
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Ho Nyung Lee
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Rob G. Moore
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Benjamin J. Lawrie
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - T. Zac Ward
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Gyula Eres
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Valentino R. Cooper
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
| | - Matthew Brahlek
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA
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15
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Zhang X, Ambhire SC, Lu Q, Niu W, Cook J, Jiang JS, Hong D, Alahmed L, He L, Zhang R, Xu Y, Zhang SSL, Li P, Bian G. Giant Topological Hall Effect in van der Waals Heterostructures of CrTe 2/Bi 2Te 3. ACS NANO 2021; 15:15710-15719. [PMID: 34460216 DOI: 10.1021/acsnano.1c05519] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μΩ·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.
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Affiliation(s)
- Xiaoqian Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Siddhesh C Ambhire
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Jidong Samuel Jiang
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Deshun Hong
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Laith Alahmed
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Liang He
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- York-Nanjing Joint Centre (YNJC) for spintronics and nano engineering, Department of Electronic Engineering, The University of York, York YO10 3DD, United Kingdom
| | - Steven S-L Zhang
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
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16
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van Thiel TC, Brzezicki W, Autieri C, Hortensius JR, Afanasiev D, Gauquelin N, Jannis D, Janssen N, Groenendijk DJ, Fatermans J, Van Aert S, Verbeeck J, Cuoco M, Caviglia AD. Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces. PHYSICAL REVIEW LETTERS 2021; 127:127202. [PMID: 34597094 DOI: 10.1103/physrevlett.127.127202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Accepted: 07/21/2021] [Indexed: 06/13/2023]
Abstract
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion symmetry across the heterointerfaces. A notable example is the interface between polar and nonpolar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way for the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wave functions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO_{3}, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO_{3}, a polar wide-band-gap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO_{2}/SrO interface configuration, leading to excess charge being pinned near the LaAlO_{3}/SrRuO_{3} interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction drives a reorganization of the topological charges in the band structure, thereby modifying the momentum-space Berry curvature in SrRuO_{3}. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
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Affiliation(s)
- T C van Thiel
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - W Brzezicki
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
- Institute of Theoretical Physics, Jagiellonian University, ulica S. Łojasiewicza 11, PL-30348 Kraków, Poland
| | - C Autieri
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - J R Hortensius
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - D Afanasiev
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - N Gauquelin
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - D Jannis
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - N Janssen
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - D J Groenendijk
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - J Fatermans
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
- Imec-Vision Lab, University of Antwerp, Universiteitsplein 1, 2610 Wilrijk, Belgium
| | - S Van Aert
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - J Verbeeck
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - M Cuoco
- SPIN-CNR, IT-84084 Fisciano (SA), Italy
- Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, IT-84084 Fisciano (SA), Italy
| | - A D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
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17
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Yoo MW, Tornos J, Sander A, Lin LF, Mohanta N, Peralta A, Sanchez-Manzano D, Gallego F, Haskel D, Freeland JW, Keavney DJ, Choi Y, Strempfer J, Wang X, Cabero M, Vasili HB, Valvidares M, Sanchez-Santolino G, Gonzalez-Calbet JM, Rivera A, Leon C, Rosenkranz S, Bibes M, Barthelemy A, Anane A, Dagotto E, Okamoto S, te Velthuis SGE, Santamaria J, Villegas JE. Large intrinsic anomalous Hall effect in SrIrO 3 induced by magnetic proximity effect. Nat Commun 2021; 12:3283. [PMID: 34078889 PMCID: PMC8172877 DOI: 10.1038/s41467-021-23489-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Accepted: 04/25/2021] [Indexed: 02/04/2023] Open
Abstract
The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La0.7Sr0.3MnO3) and a semimetallic iridate (SrIrO3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.
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Affiliation(s)
- Myoung-Woo Yoo
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - J. Tornos
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - A. Sander
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Ling-Fang Lin
- grid.411461.70000 0001 2315 1184Department of Physics and Astronomy, University of Tennessee, Knoxville, TN USA ,grid.263826.b0000 0004 1761 0489School of Physics, Southeast University, Nanjing, China
| | - Narayan Mohanta
- grid.135519.a0000 0004 0446 2659Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN USA
| | - A. Peralta
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - D. Sanchez-Manzano
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - F. Gallego
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - D. Haskel
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - J. W. Freeland
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - D. J. Keavney
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - Y. Choi
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - J. Strempfer
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - X. Wang
- grid.253355.70000 0001 2192 5641Department of Physics, Bryn Mawr College, Bryn Mawr, PA USA
| | - M. Cabero
- grid.5515.40000000119578126IMDEA Nanoscience Campus Universidad Autonoma, Cantoblanco, Spain ,grid.4795.f0000 0001 2157 7667Centro Nacional de Microscopia Electronica, Universidad Complutense, Madrid, Spain
| | - Hari Babu Vasili
- grid.423639.9CELLS-ALBA Synchrotron Radiation Facility, Cerdanyola del Valles, Spain
| | - Manuel Valvidares
- grid.423639.9CELLS-ALBA Synchrotron Radiation Facility, Cerdanyola del Valles, Spain
| | - G. Sanchez-Santolino
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - J. M. Gonzalez-Calbet
- grid.4795.f0000 0001 2157 7667Centro Nacional de Microscopia Electronica, Universidad Complutense, Madrid, Spain ,grid.4795.f0000 0001 2157 7667Department Quimica Inorganica, Facultad de Quimica, Universidad Complutense, Madrid, Spain
| | - A. Rivera
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C. Leon
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - S. Rosenkranz
- grid.187073.a0000 0001 1939 4845Materials Science Division, Argonne National Laboratory, Lemont, IL USA
| | - M. Bibes
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - A. Barthelemy
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - A. Anane
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Elbio Dagotto
- grid.411461.70000 0001 2315 1184Department of Physics and Astronomy, University of Tennessee, Knoxville, TN USA ,grid.135519.a0000 0004 0446 2659Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN USA
| | - S. Okamoto
- grid.135519.a0000 0004 0446 2659Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN USA
| | - S. G. E. te Velthuis
- grid.187073.a0000 0001 1939 4845Materials Science Division, Argonne National Laboratory, Lemont, IL USA
| | - J. Santamaria
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - Javier E. Villegas
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
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18
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Lim ZS, Li C, Huang Z, Chi X, Zhou J, Zeng S, Omar GJ, Feng YP, Rusydi A, Pennycook SJ, Venkatesan T, Ariando A. Emergent Topological Hall Effect at a Charge-Transfer Interface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004683. [PMID: 33191619 DOI: 10.1002/smll.202004683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2020] [Revised: 10/25/2020] [Indexed: 06/11/2023]
Abstract
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in the future development of spintronic memory. Here, the emergence and tuning of topological Hall effect (THE) from a CaMnO3 /CaIrO3 /CaMnO3 trilayer structure are studied in detail, which suggests the presence of magnetic Skyrmion-like bubbles. First, by tilting the magnetic field direction, the evolution of the Hall signal suggests a transformation of Skyrmions into topologically-trivial stripe domains, consistent with behaviors predicted by micromagnetic simulations. Second, by varying the thickness of CaMnO3 , the optimal thicknesses for the THE signal emergence are found, which allow identification of the source of Dzyaloshinskii-Moriya interaction (DMI) and its competition with antiferromagnetic superexchange. Employing high-resolution transmission electron microscopy, randomly distributed stacking faults are identified only at the bottom interface and may avoid mutual cancellation of DMI. Last, a spin-transfer torque experiment also reveals a low threshold current density of ≈109 A m-2 for initiating the bubbles' motion. This discovery sheds light on a possible strategy for integrating Skyrmions with antiferromagnetic spintronics.
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Affiliation(s)
- Zhi Shiuh Lim
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Changjian Li
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Zhen Huang
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Xiao Chi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Jun Zhou
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shengwei Zeng
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Ganesh Ji Omar
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Andrivo Rusydi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Thirumalai Venkatesan
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ariando Ariando
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
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