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Liu Y, Dai F, Bai H, Fan X, Wang R, Zheng X, Xiong Z, Sun H, Liang Z, Kang Z, Zhang Y. Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne. J Am Chem Soc 2024; 146:14593-14599. [PMID: 38718194 DOI: 10.1021/jacs.4c01359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Twisted moiré superlattice is featured with its moiré potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moiré potential depth. Herein, owing to the pz orbital induced band edge states enabled by the unique sp-C in bilayer γ-graphdiyne (GDY), an ultradeep moiré potential of ∼289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moiré potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moiré superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.
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Affiliation(s)
- Yingcong Liu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Fulong Dai
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Haokun Bai
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiayue Fan
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ruiqi Wang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xuzhi Zheng
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhaozhao Xiong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Haochun Sun
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhuojian Liang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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2
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Lee SJ, So JP, Kim RM, Kim KH, Rha HH, Na G, Han JH, Jeong KY, Nam KT, Park HG. Spin angular momentum-encoded single-photon emitters in a chiral nanoparticle-coupled WSe 2 monolayer. SCIENCE ADVANCES 2024; 10:eadn7210. [PMID: 38787944 PMCID: PMC11122662 DOI: 10.1126/sciadv.adn7210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2023] [Accepted: 04/23/2024] [Indexed: 05/26/2024]
Abstract
Spin angular momentum (SAM)-encoded single-photon emitters, also known as circularly polarized single photons, are basic building blocks for the advancement of chiral quantum optics and cryptography. Despite substantial efforts such as coupling quantum emitters to grating-like optical metasurfaces and applying intense magnetic fields, it remains challenging to generate circularly polarized single photons from a subwavelength-scale nanostructure in the absence of a magnetic field. Here, we demonstrate single-photon emitters encoded with SAM in a strained WSe2 monolayer coupled with chiral plasmonic gold nanoparticles. Single-photon emissions were observed at the nanoparticle position, exhibiting photon antibunching behavior with a g(2)(0) value of ~0.3 and circular polarization properties with a slight preference for left-circular polarization. Specifically, the measured Stokes parameters confirmed strong circular polarization characteristics, in contrast to emitters coupled with achiral gold nanocubes. Therefore, this work provides potential insights to make SAM-encoded single-photon emitters and understand the interaction of plasmonic dipoles and single photons, facilitating the development of chiral quantum optics.
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Affiliation(s)
- Soon-Jae Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jae-Pil So
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Ryeong Myeong Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kyoung-Ho Kim
- Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Hyun-Ho Rha
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Gunwoo Na
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Jeong Hyun Han
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Ki Tae Nam
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
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3
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Jo JS, Lee J, Choi C, Jang JW. Tip-based Lithography with a Sacrificial Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309484. [PMID: 38287738 DOI: 10.1002/smll.202309484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 12/07/2023] [Indexed: 01/31/2024]
Abstract
The fabrication of a highly controlled gold (Au) nanohole (NH) array via tip-based lithography is improved by incorporating a sacrificial layer-a tip-crash buffer layer. This inclusion mitigates scratches during the nano-indentation process by employing a 300 nm thick poly(methyl methacrylate) layer as a sacrificial layer on top of the Au film. Such a precaution ensures minimal scratches on the Au film, facilitating the creation of sub-50 nm Au NHs with a 15 nm gap between the Au NHs. The precision of this method exceeds that of fabricating Au NHs without a sacrificial layer. Demonstrating its versatility, this Au NH array is utilized in two distinct applications: as a dry etching mask to form a molybdenum disulfide hole array and as a catalyst in metal-assisted chemical etching, resulting in conical-shaped silicon nanostructures. Additionally, a significant electric field is generated when Au nanoparticles (NPs) are placed within the Au NHs. This effect arises from coupling electromagnetic waves, concentrated by the Au NHs and amplified by the Au NPs. A notable result of this configuration is the enhancement factor of surface-enhanced Raman scattering, which is an order of magnitude greater than that observed with just Au NHs and Au NPs alone.
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Affiliation(s)
- Jeong-Sik Jo
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jinho Lee
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Chiwon Choi
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jae-Won Jang
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
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4
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Jo K, Stevens CE, Choi B, El-Khoury PZ, Hendrickson JR, Jariwala D. Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface. NANO LETTERS 2024. [PMID: 38593418 DOI: 10.1021/acs.nanolett.3c03790] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.
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Affiliation(s)
- Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Christopher E Stevens
- KBR Inc., Beavercreek, Ohio 45431, United States
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB Ohio 45433, United States
| | - Bongjun Choi
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Patrick Z El-Khoury
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB Ohio 45433, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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5
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Li H, Wang Z, Lu Q, Wang L, Tan Y, Chen F. Heterogeneous integration of an on-chip Nd:YAG whispering gallery mode laser with a lithium-niobate-on-insulator platform. OPTICS LETTERS 2024; 49:1397-1400. [PMID: 38489409 DOI: 10.1364/ol.515441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Accepted: 02/10/2024] [Indexed: 03/17/2024]
Abstract
The integration of heterogeneous optical components onto an optical platform is crucial for the advancement of photonic chips. To achieve this, efficient coupling of optical signals between components and the platform is essential. Here, we have successfully integrated a Nd:YAG microdisk laser with a lithium-niobate-on-insulator (LNOI) photonic platform by modulating the propagation modes of LNOI. Ridge waveguides are fabricated on the LNOI by carefully adjusting the cross-sectional dimensions to enable the propagation of higher-order propagation modes. This ridge waveguide ensures that the effective refractive index of the higher-order mode closely matches that of the fundamental mode of the Nd:YAG microdisk, ensuring efficient waveguide-microdisk coupling. This on-chip laser, consisting of an Nd:YAG microdisk and LNOI integration, achieves a maximum output power of 23 µW, and a mode suppression ratio of 53.6 dB. This research presents an efficient approach for constructing highly functional heterogeneous integrated optical chips.
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Ra HS, Lee SH, Jeong SJ, Cho S, Lee JS. Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications. SMALL METHODS 2024; 8:e2300245. [PMID: 37330655 DOI: 10.1002/smtd.202300245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/20/2023] [Indexed: 06/19/2023]
Abstract
Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.
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Affiliation(s)
- Hyun-Soo Ra
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
| | - Sang-Hyeon Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Seock-Jin Jeong
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Sinyoung Cho
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jong-Soo Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
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7
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Dai B, Su Y, Guo Y, Wu C, Xie Y. Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets. Chem Rev 2024; 124:420-454. [PMID: 38146851 DOI: 10.1021/acs.chemrev.3c00422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.
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Affiliation(s)
- Baohu Dai
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yueqi Su
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yuqiao Guo
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Changzheng Wu
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yi Xie
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
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8
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Milligan G, Yao ZF, Cordova DLM, Tong B, Arguilla MQ. Single Quasi-1D Chains of Sb 2Se 3 Encapsulated within Carbon Nanotubes. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:730-741. [PMID: 38282683 PMCID: PMC10809716 DOI: 10.1021/acs.chemmater.3c02114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 12/27/2023] [Accepted: 12/28/2023] [Indexed: 01/30/2024]
Abstract
The realization of stable monolayers from 2D van der Waals (vdW) solids has fueled the search for exfoliable crystals with even lower dimensionalities. To this end, 1D and quasi-1D (q-1D) vdW crystals comprising weakly bound subnanometer-thick chains have been discovered and demonstrated to exhibit nascent physics in the bulk. Although established micromechanical and liquid-phase exfoliation methods have been applied to access single isolated chains from bulk crystals, interchain vdW interactions with nonequivalent strengths have greatly hindered the ability to achieve uniform single isolated chains. Here, we report that encapsulation of the model q-1D vdW crystal, Sb2Se3, within single-walled carbon nanotubes (CNTs) circumvents the relatively stronger c-axis vdW interactions between the chains and allows for the isolation of single chains with structural integrity. High-resolution transmission electron microscopy and selected area electron diffraction studies of the Sb2Se3@CNT heterostructure revealed that the structure of the [Sb4Se6]n chain is preserved, enabling us to systematically probe the size-dependent properties of Sb2Se3 from the bulk down to a single chain. We show that ensembles of the [Sb4Se6]n chains within CNTs display Raman confinement effects and an emergent band-like absorption onset around 600 nm, suggesting a strong blue shift of the near-infrared band gap of Sb2Se3 into the visible range upon encapsulation. First-principles density functional theory calculations further provided qualitative insight into the structures and interactions that could manifest in the Sb2Se3@CNT heterostructure. Spatial visualization of the calculated electron density difference map of the heterostructure indicated a minimal degree of electron donation from the host CNT to the guest [Sb4Se6]n chain. Altogether, this model system demonstrates that 1D and q-1D vdW crystals with strongly anisotropic vdW interactions can be precisely studied by encapsulation within CNTs with suitable diameters, thereby opening opportunities in understanding dimension-dependent properties of a plethora of emergent vdW solids at or approaching the subnanometer regime.
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Affiliation(s)
- Griffin
M. Milligan
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Ze-Fan Yao
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
- Department
of Chemical and Biomolecular Engineering, University of California Irvine, Irvine, California 92697, United States
| | | | - Baixin Tong
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Maxx Q. Arguilla
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
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Chang S, Lee HC, Na G, Kim RM, Moon YJ, Kim HR, Nam KT, Park HG. Enhancement of second-harmonic generation in a 64° stacked WSe 2/WS 2heterobilayer with local strain. NANOTECHNOLOGY 2024; 35:145201. [PMID: 38055989 DOI: 10.1088/1361-6528/ad12ea] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Accepted: 12/05/2023] [Indexed: 12/08/2023]
Abstract
Transition metal dichalcogenides (TMDs) are actively studied in various fields of optics and optoelectronics, including nonlinear optics of second-harmonic generation (SHG). By stacking two different TMD materials to form a heterobilyaer, unique optical properties emerge, with stronger SHG at a twist angle of 0° between TMDs and weaker SHG at a twist angle of 60°. In this work, we demonstrate the enhancement of SHG in a heterobilayer consisting of WSe2and WS2monolayers stacked at a twist angle of 64.1°, using a nanoparticle to induce local strain. The interatomic spacing of the heterobilayer is deformed by the nanoparticle, breaking the inversion symmetry, resulting in a substantial increase in the SHG of the heterobilayer at room temperature. The SHG increases depending on the polarization of the pump laser: 15-fold for linear polarization, 9-fold for right-circular polarization, and up to 100-fold for left-circular polarization. In addition, the SHG enhanced in the heterobilayer with local strain satisfies the same chiral selection rule as in the unstrained TMD region, demonstrating that the chiral selection rule of SHG is insensitive to local strain. Our findings will increase the applicability of TMD heterobilayers in nonlinear optoelectronics and valleytronics.
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Affiliation(s)
- Sehwan Chang
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hoo-Cheol Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Gunwoo Na
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Ryeong Myeong Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Yoon-Jong Moon
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Ki Tae Nam
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
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10
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Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
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Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
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11
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Pandey M, Ahuja R, Kumar R. Viscous fingering instabilities in spontaneously formed blisters of MoS 2 multilayers. NANOSCALE ADVANCES 2023; 5:6617-6625. [PMID: 38024300 PMCID: PMC10662142 DOI: 10.1039/d3na00563a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Accepted: 10/05/2023] [Indexed: 12/01/2023]
Abstract
The viscous fingering in the Hele-Shaw cell can be suppressed by replacing the upper-bounding rigid plate with an elastic membrane. Recently, graphene multilayers while polymer-curing-induced blistering showed the dynamical evolution of viscous fingering patterns on a viscoelastic substrate due to their thickness-dependent elasticity. Under certain conditions, the elastic solid-based instability couples with the viscoelastic substrate-based instability. The mechanisms underlying such a coupling in the blisters of 2D materials and the dynamical evolution of the viscous fingering patterns underneath the blisters are yet to be addressed. Herein, we investigate the viscous fingering instabilities in spontaneously formed blisters of MoS2 multilayers, and provide thorough analytical and experimental insights for the elucidation of the dynamical evolution of the viscous fingering patterns and the coupled instabilities in the blisters. We also estimate the interfacial adhesion energy of the MoS2 flakes over a (poly)vinyl alcohol (PVA) substrate and the confinement pressure inside the MoS2 blisters using a conventional blister-test model. It is observed that the presence of instability gives rise to anomalies in the modeling of the blister test. The adhesion mechanical insights would be beneficial for fundamental research as well as practical applications of 2D material blisters in flexible optoelectronics.
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Affiliation(s)
- Mukesh Pandey
- Department of Physics, Indian Institute of Technology Ropar Rupnagar Punjab-140001 India
| | - Rajeev Ahuja
- Department of Physics, Indian Institute of Technology Ropar Rupnagar Punjab-140001 India
- Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University Box 516 Uppsala-75120 Sweden
| | - Rakesh Kumar
- Department of Physics, Indian Institute of Technology Ropar Rupnagar Punjab-140001 India
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12
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Cordova DM, Chua K, Huynh RM, Aoki T, Arguilla MQ. Anisotropy-Driven Crystallization of Dimensionally Resolved Quasi-1D Van der Waals Nanostructures. J Am Chem Soc 2023; 145:22413-22424. [PMID: 37713247 PMCID: PMC10591320 DOI: 10.1021/jacs.3c05887] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Indexed: 09/16/2023]
Abstract
Unusual behavior in solids emerges from the complex interplay between crystalline order, composition, and dimensionality. In crystals comprising weakly bound one-dimensional (1D) or quasi-1D (q-1D) chains, properties such as charge density waves, topologically protected states, and indirect-to-direct band gap crossovers have been predicted to arise. However, the experimental demonstration of many of these nascent physics in 1D or q-1D van der Waals (vdW) crystals is obscured by the highly anisotropic bonding between the chains, stochasticity of top-down exfoliation, and the lack of synthetic strategies to control bottom-up growth. Herein, we report the directed crystallization of a model q-1D vdW phase, Sb2S3, into dimensionally resolved nanostructures. We demonstrate the uncatalyzed growth of highly crystalline Sb2S3 nanowires, nanoribbons, and quasi-2D nanosheets with thicknesses in the range of 10 to 100 nm from the bottom-up crystallization of [Sb4S6]n chains. We found that dimensionally resolved nanostructures emerge from two distinct chemical vapor growth pathways defined by diverse covalent intrachain and anisotropic vdW interchain interactions and controlled precursor ratios in the vapor phase. At sub-100 nm nanostructure thicknesses, we observe the hardening of phonon modes, blue-shifting of optical band gaps, and the emergence of a new high-energy photoluminescence peak. The directional growth of weakly bound 1D ribbons or chains into well-resolved nanocrystalline morphologies provides opportunities to develop ordered nanostructures and hierarchical assemblies that are suitable for a wide range of optoelectronic and quantum devices.
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Affiliation(s)
| | - Kenneth Chua
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Rebecca Mai Huynh
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Toshihiro Aoki
- Irvine
Materials Research Institute, University
of California Irvine, Irvine, California 92697, United States
| | - Maxx Q. Arguilla
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
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13
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Luo Y, Guo Q, Deng X, Ghosh S, Zhang Q, Xu H, Xiong Q. Manipulating nonlinear exciton polaritons in an atomically-thin semiconductor with artificial potential landscapes. LIGHT, SCIENCE & APPLICATIONS 2023; 12:220. [PMID: 37679312 PMCID: PMC10485014 DOI: 10.1038/s41377-023-01268-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 08/08/2023] [Accepted: 08/18/2023] [Indexed: 09/09/2023]
Abstract
Exciton polaritons in atomically thin transition-metal dichalcogenide microcavities provide a versatile platform for advancing optoelectronic devices and studying the interacting Bosonic physics at ambient conditions. Rationally engineering the favorable properties of polaritons is critically required for the rapidly growing research. Here, we demonstrate the manipulation of nonlinear polaritons with the lithographically defined potential landscapes in monolayer WS2 microcavities. The discretization of photoluminescence dispersions and spatially confined patterns indicate the deterministic on-site localization of polaritons by the artificial mesa cavities. Varying the trapping sizes, the polariton-reservoir interaction strength is enhanced by about six times through managing the polariton-exciton spatial overlap. Meanwhile, the coherence of trapped polaritons is significantly improved due to the spectral narrowing and tailored in a picosecond range. Therefore, our work not only offers a convenient approach to manipulating the nonlinearity and coherence of polaritons but also opens up possibilities for exploring many-body phenomena and developing novel polaritonic devices based on 2D materials.
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Affiliation(s)
- Yuan Luo
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Quanbing Guo
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Xinyi Deng
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Sanjib Ghosh
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Hongxing Xu
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China.
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
- Frontier Science Center for Quantum Information, Beijing, 100084, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
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14
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Basu N, Kumar R, Manikandan D, Ghosh Dastidar M, Hedge P, Nayak PK, Bhallamudi VP. Strain relaxation in monolayer MoS 2 over flexible substrate. RSC Adv 2023; 13:16241-16247. [PMID: 37266495 PMCID: PMC10230350 DOI: 10.1039/d3ra01381b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2023] [Accepted: 05/14/2023] [Indexed: 06/03/2023] Open
Abstract
In this communication, we demonstrate uniaxial strain relaxation in monolayer (1L) MoS2 transpires through cracks in both single and double-grain flakes. Chemical vapour deposition (CVD) grown 1L MoS2 has been transferred onto polyethylene terephthalate (PET) and poly(dimethylsiloxane) (PDMS) substrates for low (∼1%) and high (1-6%) strain measurements. Both Raman and photoluminescence (PL) spectroscopy revealed strain relaxation via cracks in the strain regime of 4-6%. In situ optical micrographs show the formation of large micron-scale cracks along the strain axis and ex situ atomic force microscopy (AFM) images reveal the formation of smaller lateral cracks due to the strain relaxation. Finite element simulation has been employed to estimate the applied strain efficiency as well as to simulate the strain distribution for MoS2 flakes. The present study reveals the uniaxial strain relaxation mechanism in 1L MoS2 and paves the way for exploring strain relaxation in other transition metal dichalcogenides (TMDCs) as well as their heterostructures.
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Affiliation(s)
- Nilanjan Basu
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras Chennai 600 036 India
| | - Ravindra Kumar
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras Chennai 600 036 India
| | - D Manikandan
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras Chennai 600 036 India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras Chennai 600 036 India
| | - Madhura Ghosh Dastidar
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras Chennai 600 036 India
- Quantum Center of Excellence for Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras Chennai 600036 India
| | - Praveen Hedge
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- Quantum Center of Excellence for Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras Chennai 600036 India
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras Chennai 600 036 India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras Chennai 600 036 India
- Centre for Nano and Material Sciences, Jain (Deemed-to-be University) Jain Global Campus, Kanakapura Bangalore Karnataka 562112 India
| | - Vidya Praveen Bhallamudi
- Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India
- Quantum Center of Excellence for Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras Chennai 600036 India
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15
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Zhang D, Zhai D, Deng S, Yao W, Zhu Q. Single Photon Emitters with Polarization and Orbital Angular Momentum Locking in Monolayer Semiconductors. NANO LETTERS 2023; 23:3851-3857. [PMID: 37104699 DOI: 10.1021/acs.nanolett.3c00459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Excitons in monolayer transition metal dichalcogenide are endowed with intrinsic valley-orbit coupling between their center-of-mass motion and valley pseudospin. When trapped in a confinement potential, e.g., generated by strain field, we find that intralayer excitons are valley and orbital angular momentum (OAM) entangled. By tuning the trap profile and external magnetic field, one can engineer the exciton states at the ground state and realize a series of valley-OAM entangled states. We further show that the OAM of excitons can be transferred to emitted photons, and these novel exciton states can naturally serve as polarization-OAM locked single photon emitters, which under certain circumstance become polarization-OAM entangled, highly tunable by strain trap and magnetic field. Our proposal demonstrates a novel scheme to generate polarization-OAM locked/entangled photons at the nanoscale with a high degree of integrability and tunability, pointing to exciting opportunities for quantum information applications.
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Affiliation(s)
- Di Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
| | - Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Sha Deng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Qizhong Zhu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
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16
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Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
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Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
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17
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Juo JY, Shin BG, Stiepany W, Memmler M, Kern K, Jung SJ. In-situ atomic level observation of the strain response of graphene lattice. Sci Rep 2023; 13:2451. [PMID: 36774393 PMCID: PMC9922254 DOI: 10.1038/s41598-023-29128-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Accepted: 01/31/2023] [Indexed: 02/13/2023] Open
Abstract
Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility and mechanical stability at low temperature under UHV conditions. In this work, we have implemented a compact nanoindentation system with a size of [Formula: see text] 160 mm[Formula: see text] [Formula: see text] 5.2 mm in a scanning tunneling microscope (STM) sample holder, which enables the reversible control of strain and gate electric field. A combination of gearbox and piezoelectric actuator allowed us to modulate the depth of the indentation continuously with nanometer precision. The 2D materials were transferred onto the polyimide film. Pd clamp was used to enhance the strain transfer from the polyimide from to the 2D layers. Using this unique technique, strain response of graphene lattice were observed at atomic precision. In the relaxed graphene, strain is induced mainly by local curvature. However, in the strained graphene with tented structure, the lattice parameters become more sensitive to the indentor height change and stretching strain is increased additionally. Moreover, the gate controllability is confirmed by measuring the dependence of the STM tip height on gate voltage.
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Affiliation(s)
- Jz-Yuan Juo
- grid.419552.e0000 0001 1015 6736Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - Bong Gyu Shin
- grid.419552.e0000 0001 1015 6736Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany ,grid.264381.a0000 0001 2181 989XSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746 Republic of Korea
| | - Wolfgang Stiepany
- grid.419552.e0000 0001 1015 6736Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - Marko Memmler
- grid.419552.e0000 0001 1015 6736Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - Klaus Kern
- grid.419552.e0000 0001 1015 6736Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany ,grid.5333.60000000121839049Institut de Physique, École Poly-technique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Soon Jung Jung
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569, Stuttgart, Germany.
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18
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Hussain N, Ahmed S, Tepe HU, Huang K, Avishan N, He S, Rafique M, Farooq U, Kasirga TS, Bek A, Turan R, Shehzad K, Wu H, Wang Z. Ultra-Narrow Linewidth Photo-Emitters in Polymorphic Selenium Nanoflakes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204302. [PMID: 36251779 DOI: 10.1002/smll.202204302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/02/2022] [Indexed: 06/16/2023]
Abstract
Photoluminescence (PL) in state-of-the-art 2D materials suffers from narrow spectral coverage, relatively broad linewidths, and poor room-temperature (RT) functionality. The authors report ultra-narrow linewidth photo-emitters (ULPs) across the visible to near-infrared wavelength at RT in polymorphic selenium nanoflakes (SeNFs), synthesized via a hot-pressing strategy. Photo-emitters in NIR exhibit full width at half maximum (Γ) of 330 ± 90 µeV, an order of magnitude narrower than the reported ULPs in 2D materials at 300 K, and decrease to 82 ± 70 µeV at 100 K, with coherence time (τc ) of 21.3 ps. The capping substrate enforced spatial confinement during thermal expansion at 250 °C is believed to trigger a localized crystal symmetry breaking in SeNFs, causing a polymorphic transition from the semiconducting trigonal (t) to quasi-metallic orthorhombic (orth) phase. Fine structure splitting in orth-Se causes degeneracy in defect-associated bright excitons, resulting in ultra-sharp emission. Combined theoretical and experimental findings, an optimal biaxial compressive strain of -0.45% cm-1 in t-Se is uncovered, induced by the coefficient of thermal expansion mismatch at the selenium/sapphire interface, resulting in bandgap widening from 1.74 to 2.23 ± 0.1 eV. This report underpins the underlying correlation between crystal symmetry breaking induced polymorphism and RT ULPs in SeNFs, and their phase change characteristics.
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Affiliation(s)
- Naveed Hussain
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shehzad Ahmed
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hüseyin U Tepe
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Kai Huang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Nardin Avishan
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - ShiJie He
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Mohsin Rafique
- Division of Quantum State of Matter, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Umar Farooq
- Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Talip Serkan Kasirga
- Institute of Materials Science and Nanotechnology, Bilkent University UNAM, Ankara, 06800, Turkey
| | - Alpan Bek
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Rasit Turan
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
| | - Khurram Shehzad
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Colleges of ISEE and Microelectronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Institute, State Key Labs of Silicon Materials and Modern Optical Instruments, Zhejiang University, Hangzhou, 310058, China
| | - Hui Wu
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
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19
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Yan W, Akimov AV, Barra-Burillo M, Bayer M, Bradford J, Gusev VE, Hueso LE, Kent A, Kukhtaruk S, Nadzeyka A, Patanè A, Rushforth AW, Scherbakov AV, Yaremkevich DD, Linnik TL. Coherent Phononics of van der Waals Layers on Nanogratings. NANO LETTERS 2022; 22:6509-6515. [PMID: 35960261 PMCID: PMC9413225 DOI: 10.1021/acs.nanolett.2c01542] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2022] [Revised: 08/05/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering can be used to control the physical properties of two-dimensional van der Waals (2D-vdW) crystals. Coherent phonons, which carry dynamical strain, could push strain engineering to control classical and quantum phenomena in the unexplored picosecond temporal and nanometer spatial regimes. This intriguing approach requires the use of coherent GHz and sub-THz 2D phonons. Here, we report on nanostructures that combine nanometer thick vdW layers and nanogratings. Using an ultrafast pump-probe technique, we generate and detect in-plane coherent phonons with frequency up to 40 GHz and hybrid flexural phonons with frequency up to 10 GHz. The latter arises from the periodic modulation of the elastic coupling of the vdW layer at the grooves and ridges of the nanograting. This creates a new type of a tailorable 2D periodic phononic nanoobject, a flexural phononic crystal, offering exciting prospects for the ultrafast manipulation of states in 2D materials in emerging quantum technologies.
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Affiliation(s)
- Wenjing Yan
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrey V. Akimov
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - María Barra-Burillo
- CIC
nanoGUNE BRTA, Tolosa Hiribidea, 76, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Manfred Bayer
- Experimentelle
Physik 2, Technische Universität
Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany
| | - Jonathan Bradford
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Vitalyi E. Gusev
- Laboratoire
d’Acoustique de l’Uiversité du Mans (LAUM), UMR
6613, Institut d’Acoustique - Graduate School (IA-GS), CNRS, Le Mans Université, 72085 Le Mans, France
| | - Luis E. Hueso
- CIC
nanoGUNE BRTA, Tolosa Hiribidea, 76, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation
for Science, 48013 Bilbao, Basque Country Spain
| | - Anthony Kent
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Serhii Kukhtaruk
- Department
of Theoretical Physics, V.E. Lashkaryov
Institute of Semiconductor Physics, Pr. Nauky 41, 03028 Kyiv, Ukraine
| | - Achim Nadzeyka
- Raith
GmbH, Konrad-Adenauer-Allee
8, 44263 Dortmund, Germany
| | - Amalia Patanè
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrew W. Rushforth
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Alexey V. Scherbakov
- Experimentelle
Physik 2, Technische Universität
Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany
| | - Dmytro D. Yaremkevich
- Experimentelle
Physik 2, Technische Universität
Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany
| | - Tetiana L. Linnik
- Department
of Theoretical Physics, V.E. Lashkaryov
Institute of Semiconductor Physics, Pr. Nauky 41, 03028 Kyiv, Ukraine
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20
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Ranasinghe JC, Jain A, Wu W, Zhang K, Wang Z, Huang S. Engineered 2D materials for optical bioimaging and path toward therapy and tissue engineering. JOURNAL OF MATERIALS RESEARCH 2022; 37:1689-1713. [PMID: 35615304 PMCID: PMC9122553 DOI: 10.1557/s43578-022-00591-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 05/04/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) layered materials as a new class of nanomaterial are characterized by a list of exotic properties. These layered materials are investigated widely in several biomedical applications. A comprehensive understanding of the state-of-the-art developments of 2D materials designed for multiple nanoplatforms will aid researchers in various fields to broaden the scope of biomedical applications. Here, we review the advances in 2D material-based biomedical applications. First, we introduce the classification and properties of 2D materials. Next, we summarize surface and structural engineering methods of 2D materials where we discuss surface functionalization, defect, and strain engineering, and creating heterostructures based on layered materials for biomedical applications. After that, we discuss different biomedical applications. Then, we briefly introduced the emerging role of machine learning (ML) as a technological advancement to boost biomedical platforms. Finally, the current challenges, opportunities, and prospects on 2D materials in biomedical applications are discussed. Graphical abstract
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Affiliation(s)
- Jeewan C. Ranasinghe
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Arpit Jain
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Wenjing Wu
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Ziyang Wang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
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