Centimeter-scale hole diffusion and its application in organic light-emitting diodes

Enhancing Carrier Behavior via Controlled Molecular Film Formation Engineering Leads to Significant Improvement in Electroluminescence

The quality of organic thin films critically influences carrier dynamics in organic semiconductors. In neat/doped films, even tiny voids can be penetrated by water or oxygen molecules to create charge-trap states called water/oxygen-induced traps that significantly hinder carrier mobility. While the water/oxygen-induced traps in non-doped films and crystalline states have been investigated comprehensively, there is a lack of thorough examination regarding their properties in the doped state. Therefore, there is a high demand for a molecular design strategy that effectively modulates the molecular stacking behavior in doped films and practical devices and enhances the quality of these films. Herein, we proposed a versatile molecular design principle that enables the formation of "nano-cluster" structures on both the surface and interior of doped films in target molecule 10-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-1'-(4-fluorophenyl)-10H-spiro[acridine-9,9'-xanthene] (DspiroO-F-TRZ), which is modified with a fluorophenyl group. These "nano-cluster" structures exhibit more uniform shapes within doped films and effectively reduce defective state densities while enhancing carrier injection and transport properties, ultimately improving device performance. Notably, TADF-OLED based on DspiroO-F-TRZ demonstrates nearly twice as much efficiency as its control counterpart due to contributions from 'nano-cluster' structure enhancements toward improved electroluminescence performance.

Investigating the electrical crosstalk effect between pixels in high-resolution organic light-emitting diode microdisplays

Organic light-emitting diode (OLED) microdisplays have received great attention owing to their excellent performance for augmented reality/virtual reality devices applications. However, high pixel density of OLED microdisplay causes electrical crosstalk, resulting in color distortion. This study investigated the current crosstalk ratio and changes in the color gamut caused by electrical crosstalk between sub-pixels in high-resolution full-color OLED microdisplays. A pixel structure of 3147 pixels per inch (PPI) with four sub-pixels and a single-stack white OLED with red, green, and blue color filters were used for the electrical crosstalk simulation. The results showed that the sheet resistance of the top and bottom electrodes of OLEDs rarely affected the electrical crosstalk. However, the current crosstalk ratio increased dramatically and the color gamut decreased as the sheet resistance of the common organic layer decreased. Furthermore, the color gamut of the OLED microdisplay decreased as the pixel density of the panel increased from 200 to 5000 PPI. Additionally, we fabricated a sub-pixel circuit to measure the electrical crosstalk current using a 3147 PPI scale multi-finger-type pixel structure and compared it with the simulation result.

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrene─an organic semiconductor with excellent transport properties─and extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.

A flexible organic mechanoluminophore device

A flexible mechanoluminophore device that is capable of converting mechanical energy into visualizable patterns through light-emission holds great promise in many applications, such as human-machine interfaces, Internet of Things, wearables, etc. However, the development has been very nascent, and more importantly, existing mechanoluminophore materials or devices emit light that cannot be discernible under ambient light, in particular with slight applied force or deformation. Here we report the development of a low-cost flexible organic mechanoluminophore device, which is constructed based on the multi-layered integration of a high-efficiency, high-contrast top-emitting organic light-emitting device and a piezoelectric generator on a thin polymer substrate. The device is rationalized based on a high-performance top-emitting organic light-emitting device design and maximized piezoelectric generator output through a bending stress optimization and have demonstrated that it is discernible under an ambient illumination as high as 3000 lux. A flexible multifunctional anti-counterfeiting device is further developed by integrating patterned electro-responsive and photo-responsive organic emitters onto the flexible organic mechanoluminophore device, capable of converting mechanical, electrical, and/or optical inputs into light emission and patterned displays.

Spatial Control of the Hole Accumulation Zone for Hole-Dominated Perovskite Light-Emitting Diodes by Inserting a CsAc Layer

Perovskites show efficient electroluminescence and are expected to have wide applications in light-emitting diodes (LEDs). However, owing to the unbalanced electron-hole transport properties of some highly luminescent perovskites, a fundamental challenge is that the exciton recombination zone of perovskite LEDs (PeLEDs) typically overlaps with an accumulation of the major carrier. It is known to reduce the performances of PeLEDs, leading to a reduction of efficiency and operation stability due to Auger recombination. To address this issue in a hole-dominated blue PeLED, we propose to insert a cesium acetate (CsAc) layer between the hole transport layer (HTL) and the hole-dominant perovskite layer. Electronic properties indicate that the hole accumulation zone of the device with the CsAc layer shifts away from the perovskite/ETL interface, i.e., the recombination zone, to the HTL/CsAc interface. Separation of the hole accumulation region and the exciton recombination zones substantially suppresses exciton quenching. Moreover, the CsAc layer can also improve the photophysical properties of the perovskite film by providing an extra Cs source to interact with the defect site of unreacted PbBr₂ in the perovskite film and enhance the crystallinity of the perovskite with an enlarged crystal grain size. As a result, the external quantum efficiency (EQE) of the sky-blue PeLEDs shows considerable improvement from 5.3 to 9.2% upon inserting the CsAc layer.