Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration

The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.

Observation of interlayer plasmon polaron in graphene/WS2 heterostructures

Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed", which leads to the formation of polaronic quasiparticles. The exploration of polaronic effects on low-energy excitations is in its infancy in two-dimensional materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of single-layer WS2. By using micro-focused angle-resolved photoemission spectroscopy during in situ doping of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the single-layer WS2 conduction band minimum. Our results are explained by an effective many-body model in terms of a coupling between single-layer WS2 conduction electrons and an interlayer plasmon mode. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides.

Correlation-Induced Symmetry-Broken States in Large-Angle Twisted Bilayer Graphene on MoS2

Strongly correlated states commonly emerge in twisted bilayer graphene (TBG) with "magic-angle" (1.1°), where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45° TBG, via engineering this nonmagic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the width of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked by the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45° TBG. Our result demonstrates the feasibility of the study and application of the correlation physics in TBGs with a wider range of twist angle.

Field control of quasiparticle decay in a quantum antiferromagnet

Dynamics in a quantum material is described by quantized collective motion: a quasiparticle. The single-quasiparticle description is useful for a basic understanding of the system, whereas a phenomenon beyond the simple description such as quasiparticle decay which affects the current carried by the quasiparticle is an intriguing topic. The instability of the quasiparticle is phenomenologically determined by the magnitude of the repulsive interaction between a single quasiparticle and the two-quasiparticle continuum. Although the phenomenon has been studied in several materials, thermodynamic tuning of the quasiparticle decay in a single material has not yet been investigated. Here we show, by using neutron scattering, magnetic field control of the magnon decay in a quantum antiferromagnet RbFeCl3, where the interaction between the magnon and continuum is tuned by the field. At low fields where the interaction is small, the single magnon decay process is observed. In contrast, at high fields where the interaction exceeds a critical magnitude, the magnon is pushed downwards in energy and its lifetime increases. Our study demonstrates that field control of quasiparticle decay is possible in the system where the two-quasiparticle continuum covers wide momentum-energy space, and the phenomenon of the magnon avoiding decay is ubiquitous.

Suppression of Intervalley Coupling in Graphene via Potassium Doping

The quantum interference patterns induced by impurities in graphene can form the (√3 × √3)R30° superlattice with intervalley scattering. This superlattice can lead to the folded Dirac cone at the center of Brillouin zone by coupling two non-equivalent valleys. Using angle-resolved photoemission spectroscopy (ARPES), we report the observation of suppression of the folded Dirac cone in mono- and bilayer graphene upon potassium doping. The intervalley coupling with chiral symmetry broken can persist upon a light potassium-doped level but be ruined at the heavily doped level. Meanwhile, the folded Dirac cone can be suppressed by the renormalization of the Dirac band with potassium doping. Our results demonstrate that the suppression of the intervalley scattering pattern by potassium doping could pave the way toward the realization of novel chiraltronic devices in superlattice graphene.

Plasmonic sensors based on graphene and graphene hybrid materials

The past decade has witnessed a rapid growth of graphene plasmonics and their applications in different fields. Compared with conventional plasmonic materials, graphene enables highly confined plasmons with much longer lifetimes. Moreover, graphene plasmons work in an extended wavelength range, i.e., mid-infrared and terahertz regime, overlapping with the fingerprints of most organic and biomolecules, and have broadened their applications towards plasmonic biological and chemical sensors. In this review, we discuss intrinsic plasmonic properties of graphene and strategies both for tuning graphene plasmons as well as achieving higher performance by integrating graphene with plasmonic nanostructures. Next, we survey applications of graphene and graphene-hybrid materials in biosensors, chemical sensors, optical sensors, and sensors in other fields. Lastly, we conclude this review by providing a brief outlook and challenges of the field. Through this review, we aim to provide an overall picture of graphene plasmonic sensing and to suggest future trends of development of graphene plasmonics.

Ubiquitous defect-induced density wave instability in monolayer graphene

Quantum materials are notoriously sensitive to their environments, where small perturbations can tip a system toward one of several competing ground states. Graphene hosts a rich assortment of such competing phases, including a bond density wave instability ("Kekulé distortion") that couples electrons at the K/K' valleys and breaks the lattice symmetry. Here, we report observations of a ubiquitous Kekulé distortion across multiple graphene systems. We show that extremely dilute concentrations of surface atoms (less than three adsorbed atoms every 1000 graphene unit cells) can self-assemble and trigger the onset of a global Kekulé density wave phase. Combining complementary momentum-sensitive angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED) measurements, we confirm the presence of this density wave phase and observe the opening of an energy gap. Our results reveal an unexpected sensitivity of the graphene lattice to dilute surface disorder and show that adsorbed atoms offer an attractive route toward designing novel phases in two-dimensional materials.

Anomalies at the Dirac Point in Graphene and Its Hole-Doped Compositions

We study the properties of the Dirac states in SiC-graphene and its hole-doped compositions employing angle-resolved photoemission spectroscopy and density functional theory. The symmetry-selective measurements for the Dirac bands reveal their linearly dispersive behavior across the Dirac point which was termed as the anomalous region in earlier studies. No gap is observed even after boron substitution that reduced the carrier concentration significantly from 3.7×10^{13}  cm^{-2} in SiC-graphene to 0.8×10^{13}  cm^{-2} (5% doping). The anomalies at the Dirac point are attributed to the spectral width arising from the lifetime and momentum broadening in the experiments. The substitution of boron at the graphitic sites leads to a band renormalization and a shift of the Dirac point towards the Fermi level. The internal symmetries appear to be preserved in SiC-graphene even after significant boron substitutions. These results suggest that SiC-graphene is a good platform to realize exotic science as well as advanced technology where the carrier properties like concentration, mobility, etc., can be tuned keeping the Dirac fermionic properties protected.

Multipole polaron in the devil's staircase of CeSb

Rare-earth intermetallic compounds exhibit rich phenomena induced by the interplay between localized f orbitals and conduction electrons. However, since the energy scale of the crystal-electric-field splitting is only a few millielectronvolts, the nature of the mobile electrons accompanied by collective crystal-electric-field excitations has not been unveiled. Here, we examine the low-energy electronic structures of CeSb through the anomalous magnetostructural transitions below the Néel temperature, ~17 K, termed the 'devil's staircase', using laser angle-resolved photoemission, Raman and neutron scattering spectroscopies. We report another type of electron-boson coupling between mobile electrons and quadrupole crystal-electric-field excitations of the 4f orbitals, which renormalizes the Sb 5p band prominently, yielding a kink at a very low energy (~7 meV). This coupling strength is strong and exhibits anomalous step-like enhancement during the devil's staircase transition, unveiling a new type of quasiparticle, named the 'multipole polaron', comprising a mobile electron dressed with a cloud of the quadrupole crystal-electric-field polarization.

Electron-plasmon interaction induced plasmonic-polaron band replication in epitaxial perovskite SrIrO3 films

Electron-boson interaction is fundamental to a thorough understanding of various exotic properties emerging in many-body physics. In photoemission spectroscopy, photoelectron emission due to photon absorption would trigger diverse collective excitations in solids, including the emergence of phonons, magnons, electron-hole pairs, and plasmons, which naturally provides a reliable pathway to study electron-boson couplings. While fingerprints of electron-phonon/-magnon interactions in this state-of-the-art technique have been well investigated, much less is known about electron-plasmon coupling, and direct observation of the band renormalization solely due to electron-plasmon interactions is extremely challenging. Here by utilizing integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy, we discover the long sought-after pure electron-plasmon coupling-induced low-lying plasmonic-polaron replica bands in epitaxial semimetallic SrIrO₃ films, in which the characteristic low carrier concentration and narrow bandwidth combine to provide a unique platform where the electron-plasmon interaction can be investigated kinematically in photoemission spectroscopy. This finding enriches the forms of electron band normalization on collective modes in solids and demonstrates that, to obtain a complete understanding of the quasiparticle dynamics in 5d electron systems, the electron-plasmon interaction should be considered on equal footing with the acknowledged electron-electron interaction and spin-orbit coupling.

Formation of Plasmonic Polarons in Highly Electron-Doped Anatase TiO2

The existence of various quasiparticles of polarons because of electron-boson couplings plays important roles in determining electron transport in titanium dioxide (TiO₂), which affects a wealth of physical properties from catalysis to interfacial superconductivity. In addition to the well-defined Fröhlich polarons whose electrons are dressed by the phonon clouds, it has been theoretically predicted that electrons can also couple to their own plasmonic oscillations, namely, the plasmonic polarons. Here we experimentally demonstrate the formation of plasmonic polarons in highly doped anatase TiO₂ using angle-resolved photoemission spectroscopy. Our results show that the energy separation of plasmon-loss satellites follows a dependence on √n, where n is the electron density, manifesting the characteristic of plasmonic polarons. The spectral functions enable to quantitatively evaluate the strengths of electron-plasmon and electron-phonon couplings, respectively, providing an effective approach for characterizing the interplays among different bosonic modes in the complicate many-body interactions.

Investigation of acoustic plasmons in vertically stacked metal/dielectric/graphene heterostructures for multiband coherent perfect absorption

Coherent absorption, as the time-reversed counterpart to laser, has been widely proposed recently to flexibly modulate light-matter interactions in two-dimensional materials. However, the multiband coherent perfect absorption (CPA) in atomically thin materials still has been elusive. We exploit the multiband CPA in vertically stacked metal/dielectric/graphene heterostructures via ultraconfined acoustic plasmons which can reduce the photon wavelength by a factor of about 70 and thus enable multiple-order resonances on a graphene ribbon of finite width. Under the illumination of two counter-propagating coherent beams, the two-stage coupling scheme is used for exciting multispectral acoustic plasmon resonances on the heterostructure simultaneously, thereby contributing to the ultimate multiband CPA in the mid-infrared region. The strong dependence of the nearly linear dispersion of acoustic plasmons on the chemical potential in graphene and the separation between the metal and the graphene allows the tunability in spectral positions of absorption peaks. Intriguingly, the absorption of each resonant peak is continuously tuned by varying the relative amplitude of two counter-propagating beams, and even their phase difference, respectively. The maximum modulation depth of 4.46*105 is observed. The scattering matrix is employed to demonstrate the principle of CPA and the finite-difference time-domain (FDTD) simulations are used for elucidating the flexible tunability. More importantly, the multiband coherent absorber is robust to the incident angle, and thus undoubtedly benefits extensive applications on optoelectronic and engineering technology areas for modulators and optical switches.

Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene

The synthesis of two-dimensional (2D) transition metals has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the [Formula: see text] direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which has not yet been observed and hosts great interest for fundamental physics.

Room temperature strain-induced Landau levels in graphene on a wafer-scale platform

Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.

Revealing 'plasmaron' feature in DySb by optical spectroscopy study

We report magnetic susceptibility, resistivity and optical spectroscopy study on single crystal sample DySb. It exhibits extremely large magnetoresistance (XMR), and a magnetic phase transition from paramagnetic (PM) to antiferromagnetic (AFM) state at about 10 K. A 'screened' plasma edge at about 4000 cm^-1 is revealed by optical measurement, which suggests that the material has a low carrier density. With decreasing temperature, the 'screened' plasma edge shows a blue shift, possibly due to a decrease of the effective mass of carriers. Notably, an anomalous temperature dependent midinfrared absorption feature is observed in the vicinity of the 'screened' plasma edge. In addition, it can be connected to the inflection point in the real part of the dielectric function [Formula: see text], the frequency of which exactly tracks the temperature dependent 'screened' plasma frequency. This phenomena can be explained by the appearance of a coupled electron-plasmon 'plasmaron' feature.

The dielectric constant of a bilayer graphene interface

The interlayer relative dielectric constant, ε _r, of 2-dimensional (2D) materials in general and graphitic materials in particular is one of their most important physical properties, especially for electronic applications. In this work, we study the electromechanical actuation of nano-scale graphitic contacts. We find that beside the adhesive forces there are capacitive forces that scale parabolically with the potential drop across the sheared interface. We use this phenomena to measure the intrinsic dielectric constant of the bilayer graphene interface i.e. ε _r = 6 ± 2, which is in perfect agreement with recent theoretical predictions for multi-layer graphene structures. Our method can be generally used to extract the dielectric properties of 2D materials systems and interfaces and our results pave the way for utilizing graphitic and other 2D materials in electromechanical based applications.

Crossover from lattice to plasmonic polarons of a spin-polarised electron gas in ferromagnetic EuO

Strong many-body interactions in solids yield a host of fascinating and potentially useful physical properties. Here, from angle-resolved photoemission experiments and ab initio many-body calculations, we demonstrate how a strong coupling of conduction electrons with collective plasmon excitations of their own Fermi sea leads to the formation of plasmonic polarons in the doped ferromagnetic semiconductor EuO. We observe how these exhibit a significant tunability with charge carrier doping, leading to a polaronic liquid that is qualitatively distinct from its more conventional lattice-dominated analogue. Our study thus suggests powerful opportunities for tailoring quantum many-body interactions in solids via dilute charge carrier doping.

Impact of Many-Body Effects on Landau Levels in Graphene

We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magnetophonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity v_{F}. In contrast to the logarithmic divergence of v_{F} at zero magnetic field, we find a piecewise linear scaling of v_{F} as a function of the charge carrier density, due to a magnetic-field-induced suppression of the long-range Coulomb interaction. We quantitatively confirm our experimental findings by performing tight-binding calculations on the level of the Hartree-Fock approximation, which also allow us to estimate an excitonic binding energy of ≈6  meV contained in the experimentally extracted Landau level transitions energies.

Nanoscale Probing of Interaction in Atomically Thin Layered Materials

We combine conductive atomic force microscopy (CAFM) and molecular dynamics (MD) simulations to reveal the interaction of atomically thin layered materials (ATLMs) down to nanoscale lateral dimension. The setup also allows quantifying, for the first time, the effect of layer number and electric field on the dielectric constant of ATLMs with few-layer down to monolayer thickness. Our CAFM-assisted electrostatic technique shows that high-quality mono- and bilayer graphene is reliably produced at significant yields only by the shear type of bond breaking between layers, whereas the normal type of bond breaking exhibits a very stochastic process mainly due to the coexistence of local delamination and interlayer twist. Our dielectric constant measurements also reveal a very weak dependence on the layer number and the electric field (up to our experimental limit of 0.1 V/Å), which is in contrast with theoretical reports. Owing to unexpectedly large variations in the screening ability of pristine monolayer graphene under ambient conditions, we further demonstrate that the effective dielectric constant of monolayer graphene can be engineered to provide a broad spectrum of dielectric responses (3.5-17) through oxidation and thermal annealing, thus confirming its much higher chemical reactivity than bilayer and few layers.

Plasmon modes of bilayer molybdenum disulfide: a density functional study

We explore the collective electronic excitations of bilayer molybdenum disulfide (MoS₂) using density functional theory together with random phase approximation. The many-body dielectric function and electron energy-loss spectra are calculated using an ab initio based model involving material-realistic physical properties. The electron energy-loss function of the bilayer MoS₂ system is found to be sensitive to either electron or hole doping and this is due to the fact that the Kohn-Sham band dispersions are not symmetric for energies above and below the zero Fermi level. Three plasmon modes are predicted, a damped high-energy mode, one optical mode (in-phase mode) for which the plasmon dispersion exhibits [Formula: see text] in the long wavelength limit originating from low-energy electron scattering and finally a highly damped acoustic mode (out-of-phase mode).

Intrinsic plasmarons in warm graphene

Based on a self-consistent method, we predict theoretically that there exist intrinsic plasmarons in graphene at nonzero temperature, with a well defined mode, as shown by the result of Landau damping. We find that there are sharp differences between the discussed system and the QCD/QED system. Firstly, the thermal mass is proportional to [Formula: see text] but not [Formula: see text]. Secondly, at [Formula: see text], the fermion channel and plasmaron channel are nearly degenerate, and furthermore the energy difference between fermion and plasmaron becomes larger and larger with increasing q in the region [Formula: see text]. Thirdly, the fermion behaves as a 'relativistic particle' with nonzero mass, and the plasmaron exhibits an abnormal dispersion at moderate momentum.

Importance of σ Bonding Electrons for the Accurate Description of Electron Correlation in Graphene

Electron correlation in graphene is unique because of the interplay between the Dirac cone dispersion of π electrons and long-range Coulomb interaction. Because of the zero density of states at Fermi level, the random phase approximation predicts no metallic screening at long distance and low energy, so one might expect that graphene should be a poorly screened system. However, empirically graphene is a weakly interacting semimetal, which leads to the question of how electron correlations take place in graphene at different length scales. We address this question by computing the equal time and dynamic structure factor S(q) and S(q,ω) of freestanding graphene using ab initio fixed-node diffusion Monte Carlo simulations and the random phase approximation. We find that the σ electrons contribute strongly to S(q,ω) for relevant experimental values of ω even at distances up to around 80 Å. These findings illustrate how the emergent physics from underlying Coulomb interactions results in the observed weakly correlated semimetal.

Substantially Enhancing Quantum Coherence of Electrons in Graphene via Electron-Plasmon Coupling

The interplays between different quasiparticles in solids lay the foundation for a wide spectrum of intriguing quantum effects, yet how the collective plasmon excitations affect the quantum transport of electrons remains largely unexplored. Here we provide the first demonstration that when the electron-plasmon coupling is introduced, the quantum coherence of electrons in graphene is substantially enhanced with the quantum coherence length almost tripled. We further develop a microscopic model to interpret the striking observations, emphasizing the vital role of the graphene plasmons in suppressing electron-electron dephasing. The novel and transformative concept of plasmon-enhanced quantum coherence sheds new insight into interquasiparticle interactions, and further extends a new dimension to exploit nontrivial quantum phenomena and devices in solid systems.

Plasmonics of 2D Nanomaterials: Properties and Applications

Plasmonics has developed for decades in the field of condensed matter physics and optics. Based on the classical Maxwell theory, collective excitations exhibit profound light-matter interaction properties beyond classical physics in lots of material systems. With the development of nanofabrication and characterization technology, ultra-thin two-dimensional (2D) nanomaterials attract tremendous interest and show exceptional plasmonic properties. Here, we elaborate the advanced optical properties of 2D materials especially graphene and monolayer molybdenum disulfide (MoS2), review the plasmonic properties of graphene, and discuss the coupling effect in hybrid 2D nanomaterials. Then, the plasmonic tuning methods of 2D nanomaterials are presented from theoretical models to experimental investigations. Furthermore, we reveal the potential applications in photocatalysis, photovoltaics and photodetections, based on the development of 2D nanomaterials, we make a prospect for the future theoretical physics and practical applications.

A Kinetic Pathway toward High-Density Ordered N Doping of Epitaxial Graphene on Cu(111) Using C5NCl5 Precursors

Pristine graphene possesses high electrical mobility, but its low charge carrier density severely limits its technological significance. Past efforts to increase graphene's carrier density via chemical doping have shown limited successes, accompanied by substantial reductions in the mobility caused by disordered dopants. Here, based on first-principles calculations, we propose to grow graphene on Cu(111) via self-assembly of C₅NCl₅ molecular precursors to achieve high-density (1/6) and highly ordered nitrogen doping. Such a process relies on the elegant concerted roles played by the London dispersion, chemical, and screened Coulomb repulsive forces in enhancing molecular adsorption, facilitating easy dechlorination, and dictating the overall orientation of the C₅N radicals, respectively. Further growth from the orientationally correlated graphene islands is accompanied by significantly minimized density of grain boundaries as the grains coalesce to form larger N-doped graphene sheets, which are further shown to possess superb electronic properties for future device applications. Initial kinetic processes involved in N-doped graphene growth using C₅NH₅ precursors are also investigated and contrasted with that of C₅NCl₅.

Observation of variable hybridized-band gaps in Eu-intercalated graphene

We report europium (Eu)-induced changes in the π-band of graphene (G) formed on the 6H-SiC(0001) surface by a combined study of photoemission measurements and density functional theory (DFT) calculations. Our photoemission data reveal that Eu intercalates upon annealing at 120 °C into the region between the graphene and the buffer layer (BL) to form a G/Eu/BL system, where a band gap of 0.29 eV opens at room temperature. This band gap is found to increase further to 0.48 eV upon cooling down to 60 K. Our DFT calculations suggest that the increased band gap originates from the enhanced hybridization of the graphene π-band with the Eu 4f band due to the increased magnetic ordering upon cooling. These Eu atoms continue to intercalate further down below the BL to produce bilayer graphene (G/BL/Eu) upon annealing at 300 °C. The π-band stemming from the BL then exhibits another band gap of 0.37 eV, which appears to be due to the strong hybridization between the π-band of the BL and the Eu 4f band. The Eu-intercalated graphene thus illustrates an example of versatile band gaps formed under different thermal treatments, which may play a critical role for future applications in graphene-based electronics.

Padé resummation of many-body perturbation theories

In a typical scenario the diagrammatic many-body perturbation theory generates asymptotic series. Despite non-convergence, the asymptotic expansions are useful when truncated to a finite number of terms. This is the reason for the popularity of leading-order methods such as the GW approximation in condensed matter, molecular and atomic physics. Appropriate truncation order required for the accurate description of strongly correlated materials is, however, not known a priori. Here an efficient method based on the Padé approximation is introduced for the regularization of perturbative series allowing to perform higher-order self-consistent calculations and to make quantitative predictions on the convergence of many-body perturbation theories. The theory is extended towards excited states where the Wick theorem is not directly applicable. Focusing on the plasmon-assisted photoemission from graphene, we treat diagrammatically electrons coupled to the excited state plasmons and predict new spectral features that can be observed in the time-resolved measurements.

Spin Polarization and Attosecond Time Delay in Photoemission from Spin Degenerate States of Solids

After photon absorption, electrons from a dispersive band of a solid require a finite time in the photoemission process before being photoemitted as free particles, in line with recent attosecond-resolved photoemission experiments. According to the Eisenbud-Wigner-Smith model, the time delay is due to a phase shift of different transitions that occur in the process. Such a phase shift is also at the origin of the angular dependent spin polarization of the photoelectron beam, observable in spin degenerate systems without angular momentum transfer by the incident photon. We propose a semiquantitative model which permits us to relate spin and time scales in photoemission from condensed matter targets and to better understand spin- and angle-resolved photoemission spectroscopy (SARPES) experiments on spin degenerate systems. We also present the first experimental determination by SARPES of this time delay in a dispersive band, which is found to be greater than 26 as for electrons emitted from the sp-bulk band of the model system Cu(111).

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the ‘chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

Heterostructures of graphene and hexagonal boron nitride have great potential for high-mobility electronics, yet little is known about the electronic interaction between these two atomically thin materials. Here, the authors perform angle-resolved reflected-electron spectroscopy to unveil their interplay.

Vertex Corrections for Positive-Definite Spectral Functions of Simple Metals

We present a systematic study of vertex corrections in a homogeneous electron gas at metallic densities. The vertex diagrams are built using a recently proposed positive-definite diagrammatic expansion for the spectral function. The vertex function not only provides corrections to the well known plasmon and particle-hole scatterings, but also gives rise to new physical processes such as the generation of two plasmon excitations or the decay of the one-particle state into a two-particle-one-hole state. By an efficient Monte Carlo momentum integration we are able to show that the additional scattering channels are responsible for a reduction of the bandwidth, the appearance of a secondary plasmon satellite below the Fermi level, and a substantial redistribution of spectral weights. The feasibility of the approach for first-principles band-structure calculations is also discussed.

Artificially Constructed Plasmarons and Plasmon-Exciton Molecules in 2D Metals

Resonant optical excitation was used to create a macroscopic nonequilibrium ensemble of "dark" excitons with an unprecedented long lifetime in a two-dimensional electron system placed in a quantizing magnetic field. Exotic three-particle and four-particle states, plasmarons and plasmon-exciton molecules, coupled with the surrounding electrons through the collective plasma oscillations are engineered. Plasmarons and plasmon-exciton molecules are manifested as new features in the recombination spectra of nonequilibrium systems.

Influence of oxygen on nitrogen-doped carbon nanofiber growth directly on nichrome foil

The synthesis of various nitrogen-doped (N-doped) carbon nanostructures has been significantly explored as an alternative material for energy storage and metal-free catalytic applications. Here, we reveal a direct growth technique of N-doped carbon nanofibers (CNFs) on flexible nichrome (NiCr) foil using melamine as a solid precursor. Highly reactive Cr plays a critical role in the nanofiber growth process on the metal alloy foil in an atmospheric pressure chemical vapor deposition (APCVD) process. Oxidation of Cr occurs in the presence of oxygen impurities, where Ni nanoparticles are formed on the surface and assist the growth of nanofibers. Energy-dispersive x-ray spectroscopy (EDXS) and x-ray photoelectron spectroscopy (XPS) clearly show the transformation process of the NiCr foil surface with annealing in the presence of oxygen impurities. The structural change of NiCr foil assists one-dimensional (1D) CNF growth, rather than the lateral two-dimensional (2D) growth. The incorporation of distinctive graphitic and pyridinic nitrogen in the graphene lattice are observed in the synthesized nanofiber, owing to better nitrogen solubility. Our finding shows an effective approach for the synthesis of highly N-doped carbon nanostructures directly on Cr-based metal alloys for various applications.

Sublattice Interference as the Origin of σ Band Kinks in Graphene

Kinks near the Fermi level observed in angle-resolved photoemission spectroscopy (ARPES) have been widely accepted to represent electronic coupling to collective excitations, but kinks at higher energies have eluded a unified description. We identify the mechanism leading to such kink features by means of ARPES and tight-binding band calculations on σ bands of graphene, where anomalous kinks at energies as high as ∼4  eV were reported recently [Phys. Rev. Lett. 111, 216806 (2013)]. We found that two σ bands show a strong intensity modulation with abruptly vanishing intensity near the kink features, which is due to sublattice interference. The interference induced local singularity in the matrix element is a critical factor that gives rise to apparent kink features, as confirmed by our spectral simulations without involving any coupling to collective excitations.

Cerium-induced changes in the π-band of graphene

By doping magnetic Ce atoms on a single layer graphene, we report a new and efficient means of modifying structural and electronic properties of graphene that opens a temperature-dependent band gap of size up to 0.5 eV.

Band modification of graphene by using slow Cs+ ions

We report new wide band gap engineering for graphene using slow Cs⁺ ions, which allows both fine-tuning and on–off switching capability of the band gap in a range suitable for most applications sustaining the nature of Dirac fermions.

Synthesis and characterization of nitrogen-functionalized graphene oxide in high-temperature and high-pressure ammonia

Successful N-functionalization of graphene oxide with high-temperature and high-pressure ammonia obtaining over 10% N-doping level.

Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation

The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.

Tuning the van der Waals Interaction of Graphene with Molecules via Doping

We use scanning tunneling microscopy to visualize and thermal desorption spectroscopy to quantitatively measure that the binding of naphthalene molecules to graphene, a case of pure van der Waals interaction, strengthens with n and weakens with p doping of graphene. Density-functional theory calculations that include the van der Waals interaction in a seamless, ab initio way accurately reproduce the observed trend in binding energies. Based on a model calculation, we propose that the van der Waals interaction is modified by changing the spatial extent of graphene's π orbitals via doping.

Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.

Accessing Phonon Polaritons in Hyperbolic Crystals by Angle-Resolved Photoemission Spectroscopy

Recently studied hyperbolic materials host unique phonon-polariton (PP) modes. The ultrashort wavelengths of these modes, as well as their low damping, hold promise for extreme subdiffraction nanophotonics schemes. Polar hyperbolic materials such as hexagonal boron nitride can be used to realize long-range coupling between PP modes and extraneous charge degrees of freedom. The latter, in turn, can be used to control and probe PP modes. Here we analyze coupling between PP modes and plasmons in an adjacent graphene sheet, which opens the door to accessing PP modes by angle-resolved photoemission spectroscopy (ARPES). A rich structure in the graphene ARPES spectrum due to PP modes is predicted, providing a new probe of PP modes and their coupling to graphene plasmons.

Biexciton Binding of Dirac fermions Confined in Colloidal Graphene Quantum Dots

We present transient absorption measurements and microscopic theory of biexciton binding in triangular colloidal graphene quantum dots consisting of 168 sp(2)-hybridized C atoms. We observe optical transitions from the lowest orbitally dark singlet exciton states to states below the energy of an unbound dark+bright singlet-exciton pair. Through microscopic calculations of the low-energy exciton and biexciton states via tight-binding, Hartree-Fock, and configuration interaction methods, the spectra reveal a biexciton consisting primarily of a dark-bright singlet-pair bound by ∼0.14 eV.