Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells

Enhanced Majorana stability in a three-site Kitaev chain

Majorana zero modes are non-Abelian quasiparticles predicted to emerge at the edges of topological superconductors. A one-dimensional topological superconductor can be realized with the Kitaev model-a chain of spinless fermions coupled via p-wave superconductivity and electron hopping-which becomes topological in the long-chain limit. Here we realize a three-site Kitaev chain using semiconducting quantum dots coupled by superconducting segments in a hybrid InSb/Al nanowire. We investigate the robustness of Majorana zero modes under varying coupling strengths and electrochemical potentials, comparing two- and three-site chains realized within the same device. We observe that extending the chain to three sites enhances the stability of the zero-energy modes, especially against variations in the coupling strengths. This experiment lacks superconducting phase control, yet numerical conductance simulations with phase averaging align well with our observations. Our results demonstrate the scalability of quantum-dot-based Kitaev chains and its benefits for Majorana stability.

Proximity-Induced Superconductivity in Ferromagnetic Fe3GeTe2 and Josephson Tunneling through a van der Waals Heterojunction

Synergy between superconductivity and ferromagnetism may offer great opportunities in nondissipative spintronics and topological quantum computing. Yet at the microscopic level, the exchange splitting of the electronic states responsible for ferromagnetism is inherently incompatible with the spin-singlet nature of conventional superconducting Cooper pairs. Here, we exploit the recently discovered van der Waals ferromagnets as enabling platforms with marvelous controllability to unravel the myth between ferromagnetism and superconductivity. We report unambiguous experimental evidence of superconductivity in few-layer ferromagnetic Fe3GeTe2 (FGT) proximity coupled to a superconducting NbSe2 overlayer through an insulating spacer, demonstrating coexistence of these two seemingly antagonistic orderings. Our transport measurements reveal a sudden resistance drop to zero in FGT below the superconducting critical temperature of NbSe2 and detect a Josephson supercurrent through the NbSe2/insulator/FGT van der Waals junction. Furthermore, using anomalous Hall effect and magnetic force microscopy characterizations, we confirm that FGT preserves its ferromagnetism in the superconducting regime. Our central findings reveal the microscopic harmony between ferromagnetism and superconductivity and render these systems immense technological potentials.

First-Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface

Majorana zero modes are predicted to emerge in semiconductor/superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges. The coupling between the superconductor and the semiconductor may be too strong for Majorana modes to emerge, due to effective doping of the semiconductor by the metallic contact. This could be mediated by adding a tunnel barrier of controlled thickness. We use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO), to assess ZnTe and CdSe as prospective tunnel barriers for the InAs/Al interface. The results of DFT+U(BO) for ZnTe are validated by comparison to angle resolved photoemission spectroscopy (ARPES). We then study bilayer interfaces of the three semiconductors with each other and with Al, as well as trilayer interfaces with a varying number of ZnTe or CdSe layers inserted between InAs and Al. We find that 16 atomic layers of either material completely insulate the InAs from metal induced gap states (MIGS). However, ZnTe and CdSe differ significantly in their band alignment, such that ZnTe forms an effective barrier for electrons, whereas CdSe forms a barrier for holes. Because of Fermi level pinning in the conduction band at the interface, only electron transport is relevant for InAs-based Majorana devices. Therefore, ZnTe is the better choice. Based on the results of our simulations, we suggest conducting experiments with ZnTe barriers in the thickness range of 6-18 atomic layers.

Interfacially Enhanced Superconductivity in Fe(Te,Se)/Bi4Te3 Heterostructures

Realizing topological superconductivity by integrating high-transition-temperature (TC) superconductors with topological insulators can open new paths for quantum computing applications. Here, a new approach is reported for increasing the superconducting transition temperature( T C onset ) $( {T_{\mathrm{C}}^{{\mathrm{onset}}}} )$ by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that theT C onset $T_{\mathrm{C}}^{{\mathrm{onset}}}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when Bi2Te3 is replaced with the topological phase Bi4Te3. Interfacing Fe(Te,Se) with Bi4Te3 is also found to be critical for stabilizing superconductivity in monolayer films whereT C onset $T_{\mathrm{C}}^{{\mathrm{onset}}}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the Bi4Te3 layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing TC in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases.

Stemless InSb nanowire networks and nanoflakes grown on InP

Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs. This stem imposes limitations, which include restricting the size of the nanowire network, inducing disorder through grain boundaries and impurity incorporation. Here, we omit the stem allowing for the growth of stemless InSb nanowire networks on an InP substrate. To enable the growth without the stem, we show that a preconditioning step using arsine (AsH3) is required before InSb growth. High-yield of stemless nanowire growth is achieved by patterning the substrate with a selective-area mask with nanohole cavities, containing restricted gold droplets from which nanowires originate. Interestingly, these nanowires are bent, posing challenges for the synthesis of interconnecting nanowire networks due to merging failure. We attribute this bending to the non-homogeneous incorporation of arsenic impurities in the InSb nanowires and the interposed lattice-mismatch. By tuning the growth parameters, we can mitigate the bending, yielding large and single crystalline InSb nanowire networks and nanoflakes. The improved size and crystal quality of these nanostructures broaden the potential of this technique for fabricating advanced quantum devices.

Shadowed versus Etched Superconductor-Semiconductor Junctions in Al/InAs Nanowires

Hybrid semiconductor-superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.

Complete miscibility of immiscible elements at the nanometre scale

Understanding the mixing behaviour of elements in a multielement material is important to control its structure and property. When the size of a multielement material is decreased to the nanoscale, the miscibility of elements in the nanomaterial often changes from its bulk counterpart. However, there is a lack of comprehensive and quantitative experimental insight into this process. Here we explored how the miscibility of Au and Rh evolves in nanoparticles of sizes varying from 4 to 1 nm and composition changing from 15% Au to 85% Au. We found that the two immiscible elements exhibit a phase-separation-to-alloy transition in nanoparticles with decreased size and become completely miscible in sub-2 nm particles across the entire compositional range. Quantitative electron microscopy analysis and theoretical calculations were used to show that the observed immiscibility-to-miscibility transition is dictated by particle size, composition and possible surface adsorbates present under the synthesis conditions.

Electronic Transport and Quantum Phenomena in Nanowires

Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.

Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces

Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a Raman apparatus based on the use of a fiber optic probe, with a lens collecting the backscattered light directly inserted in ultrahigh vacuum. The solution has been tested for the preparation of III-V semiconductor surfaces, which requires the recovery of their atomic reconstruction. The surfaces were either protected with a thin As amorphous layer or covered with a native oxide prior to their treatment. The analysis of the Raman spectra, which was correlated with the study of the surfaces with low temperature scanning tunneling microscopy at the end of the cleaning process, shows the high potential of Raman spectroscopy for monitoring the cleanliness of III-V semiconductor heterostructures in situ.

Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates

Metal deposition with cryogenic cooling is a common technique in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a significant challenge arises when these films return to room temperature, as they tend to undergo dewetting. This issue can be mitigated by capping the films with an amorphous layer. In this study, we investigate the influence of differentin situfabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we consistently observe that the films remain smooth upon returning to room temperature and exhibit epitaxy on InSb in the cubic Sn (α-Sn) phase. Notably, we identify a correlation between alumina capping using an electron beam evaporator and an increased presence of tetragonal Sn (β-Sn) grains. This suggests that heating from the alumina source may induce a partial phase transition in the Sn layer. The existence of theβ-Sn phase induces superconducting behavior of the films by percolation effect. This study highlights the potential for tailoring the structural properties of cryogenic Sn thin films throughin situcapping. This development opens avenues for precise control in the production of superconducting Sn films, facilitating their integration into quantum computing platforms.

Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity

Indium antimonide nanowires (InSb NWs) are attractive building-block candidates for bottom-up construction of high-efficiency electronics and optoelectronics due to their narrow direct band gap, fast room temperature carrier mobilities and small exciton binding energy. However, InSb NWs synthesized by the vapor-liquid-solution (VLS) mechanism generally suffer from an increased carrier and phonon scattering rate, which is thought to be caused by randomly distributed crystal defects along the NW growth direction. In this study, by utilizing the recently developed low-temperature, solution-processed technique, these crystal defects were successfully suppressed by periodically distributed twin planes to form twinned InSb nanowires. Importantly, measurements of the electrical transport properties of field effect transistors (FETs) reveal that the InSb NWs exhibit a hole-dominated conductivity with room temperature mobilities of up to 50.71 cm2 V-1 s-1, which is distinctly contrary to the intrinsic n-type InSb NWs. This observation of n-p switching behavior is probably attributed to the surface band bending effect with regard to the Fermi energy level, which is caused by surface oxide trap states arising from the native-oxide layer at the surface of the InSb NWs. All these results illustrate that the as-prepared colloidal InSb NWs can potentially be used as p-type materials for integration with next-generation nanoscale electronics and optoelectronics via surface engineering.

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.

Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation

Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we used high-aspect-ratio SiOx dielectric walls to in situ evaporate islands of superconductor tin on in-plane InAs SAG nanowires. Our technique enables customization in the designs of such hybrid nanostructures, while simultaneously performing the nanowire and superconductor growth without breaking vacuum. Using this technique, we grew super(S)-normal(N)-super(S), NS, and SNSNS junctions. We performed cryogenic electron transport measurements revealing the presence of gate and field tunable supercurrents. We further measured the superconducting gap and critical fields in the hybrid nanostructures and the crossover from 2e to 1e periodicity in the SNSNS junctions as a proof of the usability of these hybrid nanostructures.

Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111)

Over the past three decades, the growth of Bi thin films has been extensively explored due to their potential applications in various fields such as thermoelectrics, ferroelectrics, and recently for topological and neuromorphic applications, too. Despite significant research efforts in these areas, achieving reliable and controllable growth of high-quality Bi thin-film allotropes has remained a challenge. Previous studies have reported the growth of trigonal and orthorhombic phases on various substrates yielding low-quality epilayers characterized by surface morphology. In this study, we present a systematic growth investigation, enabling the high-quality growth of Bi epilayers on Bi-terminated Si (111) 1 × 1 surfaces using molecular beam epitaxy. Our work yields a phase map that demonstrates the realization of trigonal, orthorhombic, and pseudocubic thin-film allotropes of Bi. In-depth characterization through X-ray diffraction (XRD) techniques and scanning transmission electron microscopy (STEM) analysis provides a comprehensive understanding of phase segregation, phase stability, phase transformation, and phase-dependent thickness limitations in various Bi thin-film allotropes. Our study provides recipes for the realization of high-quality Bi thin films with desired phases, offering opportunities for the scalable refinement of Bi into quantum and neuromorphic devices and for revisiting technological proposals for this versatile material platform from the past 30 years.

Joule spectroscopy of hybrid superconductor-semiconductor nanodevices

Hybrid superconductor-semiconductor devices offer highly tunable platforms, potentially suitable for quantum technology applications, that have been intensively studied in the past decade. Here we establish that measurements of the superconductor-to-normal transition originating from Joule heating provide a powerful spectroscopical tool to characterize such hybrid devices. Concretely, we apply this technique to junctions in full-shell Al-InAs nanowires in the Little-Parks regime and obtain detailed information of each lead independently and in a single measurement, including differences in the superconducting coherence lengths of the leads, inhomogeneous covering of the epitaxial shell, and the inverse superconducting proximity effect; all-in-all constituting a unique fingerprint of each device with applications in the interpretation of low-bias data, the optimization of device geometries, and the uncovering of disorder in these systems. Besides the practical uses, our work also underscores the importance of heating in hybrid devices, an effect that is often overlooked.

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [ npj Computational Materials 2020, 6, 180]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [ Advanced Quantum Technologies 2022, 5, 2100033] is used to resolve the contributions of different kz values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in trilayer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.

Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs

We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature T^{*} is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate damping, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, T^{*} is also tuned by a magnetic flux.

Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks

Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes1-5. However, multiple claims of Majorana detection, based on either tunnelling6-10 or Coulomb blockade (CB) spectroscopy11,12, remain disputed. Here we devise an experimental protocol that allows us to perform both types of measurement on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero-bias peaks in non-blockaded transport. Specifically, we observe junction-dependent, even-odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires without concomitant low-bias peaks in tunnelling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological Majorana zero modes.

InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices

Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of ∼10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ∼10 K, and MoRe-based Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.

Anomalous universal conductance as a hallmark of non-locality in a Majorana-hosted superconducting island

The non-local feature of topological states of matter is the key for the topological protection of quantum information and enables robust non-local manipulation in quantum information. Here we propose to manifest the non-local feature of a Majorana-hosted superconducting island by measuring the temperature dependence of Coulomb blockade peak conductance in different regimes. In the low-temperature regime, we discover a coherent double Majorana-assisted teleportation (MT) process, where any independent tunneling process always involves two coherent non-local MTs; and we also find an anomalous universal scaling behavior, i.e., a crossover from a \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${[\max (T,eV)]}^{6}$$\end{document}[max(T,eV)]6 power-law to a \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${[\max (T,eV)]}^{3}$$\end{document}[max(T,eV)]3 power-law conductance behavior when energy scale increases — in stark contrast to the usual exponential suppression due to certain local transport. In the high-temperature regime, the conductance is instead proportional to the temperature inverse, indicating a non-monotonic temperature-dependence of the conductance. Both the anomalous power law and non-monotonic temperature-dependence of the conductance can be distinguished from the conductance peak in the traditional Coulomb block, and therefore, together serve as a hallmark for the non-local feature in the Majorana-hosted superconducting island.

The ability to detect the non-local nature of topological states in electron transport is highly desirable for topological quantum computation. Hao et al. propose a two-terminal transport scheme to detect the non-locality of a topological superconducting island via anomalous scaling of the tunnelling conductance.

Small Charging Energies and g-Factor Anisotropy in PbTe Quantum Dots

PbTe is a semiconductor with promising properties for topological quantum computing applications. Here, we characterize electron quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140 μeV and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron g-factor as a function of magnetic field direction. We find the g-factor tensor to be highly anisotropic with principal g-factors ranging from 0.9 to 22.4 and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.

Spin-Mixing Enhanced Proximity Effect in Aluminum-Based Superconductor-Semiconductor Hybrids

In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. However, aluminum-based devices suffer from poor magnetic field compatibility. Herein, this limitation is resolved by showing that adatoms of heavy elements (e.g., platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, it is shown that the increased field resilience originates from spin-orbit scattering introduced by Pt. This property is exploited in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where it is shown that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7 T. The two-electron charging effect is shown to be robust against the presence of heavy adatoms. Additionally, non-local spectroscopy is used in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, it is demonstrated that proximitized semiconductor states maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required.

Electronic Transport in Double-Nanowire Superconducting Islands with Multiple Terminals

We characterize in situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends suggest the presence of a subgap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals, and free of quasiparticle poisoning, these nanowires show promise for the implementation of several proposals that rely on parallel nanowire platforms.

Signatures of Andreev Blockade in a Double Quantum Dot Coupled to a Superconductor

We investigate an electron transport blockade regime in which a spin triplet localized in the path of current is forbidden from entering a spin-singlet superconductor. To stabilize the triplet, a double quantum dot is created electrostatically near a superconducting Al lead in an InAs nanowire. The quantum dot closest to the normal lead exhibits Coulomb diamonds, and the dot closest to the superconducting lead exhibits Andreev bound states and an induced gap. The experimental observations compare favorably to a theoretical model of Andreev blockade, named so because the triplet double dot configuration suppresses Andreev reflections. Observed leakage currents can be accounted for by finite temperature. We observe the predicted quadruple level degeneracy points of high current and a periodic conductance pattern controlled by the occupation of the normal dot. Even-odd transport asymmetry is lifted with increased temperature and magnetic field. This blockade phenomenon can be used to study spin structure of superconductors. It may also find utility in quantum computing devices that use Andreev or Majorana states.

Semiconductor Epitaxy in Superconducting Templates

Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.

Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires

We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.

Noble Metal Nanoparticles Decorated Metal Oxide Semiconducting Nanowire Arrays Interwoven into 3D Mesoporous Superstructures for Low-Temperature Gas Sensing

Mesoporous materials have been extensively studied for various applications due to their high specific surface areas and well-interconnected uniform nanopores. Great attention has been paid to synthesizing stable functional mesoporous metal oxides for catalysis, energy storage and conversion, chemical sensing, and so forth. Heteroatom doping and surface modification of metal oxides are typical routes to improve their performance. However, it still remains challenging to directly and conveniently synthesize mesoporous metal oxides with both a specific functionalized surface and heteroatom-doped framework. Here, we report a one-step multicomponent coassembly to synthesize Pt nanoparticle-decorated Si-doped WO₃ nanowires interwoven into 3D mesoporous superstructures (Pt/Si-WO₃ NWIMSs) by using amphiphilic poly(ethylene oxide)-block-polystyrene (PEO-b-PS), Keggin polyoxometalates (H₄SiW₁₂O₄₀) and hydrophobic (1,5-cyclooctadiene)dimethylplatinum(II) as the as structure-directing agent, tungsten precursor and platinum source, respectively. The Pt/Si-WO₃ NWIMSs exhibit a unique mesoporous structure consisting of 3D interwoven Si-doped WO₃ nanowires with surfaces homogeneously decorated by Pt nanoparticles. Because of the highly porous structure, excellent transport of carriers in nanowires, and rich WO₃/Pt active interfaces, the semiconductor gas sensors based on Pt/Si-WO₃ NWIMSs show excellent sensing properties toward ethanol at low temperature (100 °C) with high sensitivity (S = 93 vs 50 ppm), low detection limit (0.5 ppm), fast response-recovery speed (17-7 s), excellent selectivity, and long-term stability.