Nanoscale covariance magnetometry with diamond quantum sensors

Solid-state spin coherence time approaching the physical limit

Extending the coherence time of quantum systems to their physical limit is a long-standing pursuit and critical for developing quantum science and technology. By characterizing all the microscopic noise sources of the electronic spin [nitrogen-vacancy (NV) center] in diamonds using complete noise spectroscopy, we observe a previously unforeseen noise spectrum manifested as the empirical limit ([Formula: see text]) that has puzzled researchers for decades in various solid-state systems. By implementing a corresponding dynamical decoupling strategy, we are able to surpass the empirical limit and approach the upper physical limit T2 = 2T1 for NVs, from room temperature down to 220 kelvin. Our observations, including the independence across different spatial sites and its dependence on temperature in the same way as spin-lattice relaxation, suggest an emerging decoherence mechanism dominated by spin-lattice interaction. These results provide a unified and universal strategy for characterizing and controlling microscopic noises, thereby paving the way for achieving the physical limit in various solid-state systems.

Quantum Turnstiles for Robust Measurement of Full Counting Statistics

We present a scalable protocol for measuring full counting statistics (FCS) in experiments or tensor-network simulations. In this method, an ancilla in the middle of the system acts as a turnstile, with its phase keeping track of the time-integrated particle flux. Unlike quantum gas microscopy, the turnstile protocol faithfully captures FCS starting from number-indefinite initial states or in the presence of noisy dynamics. In addition, by mapping the FCS onto a single-body observable, it allows for stable numerical calculations of FCS using approximate tensor-network methods. We demonstrate the wide-ranging utility of this approach by computing the FCS of the transferred magnetization in a Floquet Heisenberg spin chain, as studied in a recent experiment with superconducting qubits, as well as the FCS of charge transfer in random circuits.

A spin-refrigerated cavity quantum electrodynamic sensor

Quantum sensors based on solid-state defects, in particular nitrogen-vacancy (NV) centers in diamond, enable precise measurement of magnetic fields, temperature, rotation, and electric fields. Cavity quantum electrodynamic (cQED) readout, in which an NV ensemble is hybridized with a microwave mode, can overcome limitations in optical spin detection and has resulted in leading magnetic sensitivities at the pT-level. This approach, however, remains far from the intrinsic spin-projection noise limit due to thermal Johnson-Nyquist noise and spin saturation effects. Here we tackle these challenges by combining recently demonstrated spin refrigeration techniques with comprehensive nonlinear modeling of the cQED sensor operation. We demonstrate that the optically-polarized NV ensemble simultaneously provides magnetic sensitivity and acts as a heat sink for the deleterious thermal microwave noise background, even when actively probed by a microwave field. Optimizing the NV-cQED system, we demonstrate a broadband sensitivity of 576 ± 6 fT/Hz around 15 kHz in ambient conditions. We then discuss the implications of this approach for the design of future magnetometers, including near-projection-limited devices approaching 3 fT/Hz sensitivity enabled by spin refrigeration.

Quantum sensing with optically accessible spin defects in van der Waals layered materials

Quantum sensing has emerged as a powerful technique to detect and measure physical and chemical parameters with exceptional precision. One of the methods is to use optically active spin defects within solid-state materials. These defects act as sensors and have made significant progress in recent years, particularly in the realm of two-dimensional (2D) spin defects. In this article, we focus on the latest trends in quantum sensing that use spin defects in van der Waals (vdW) materials. We discuss the benefits of combining optically addressable spin defects with 2D vdW materials while highlighting the challenges and opportunities to use these defects. To make quantum sensing practical and applicable, the article identifies some areas worth further exploration. These include identifying spin defects with properties suitable for quantum sensing, generating quantum defects on demand with control of their spatial localization, understanding the impact of layer thickness and interface on quantum sensing, and integrating spin defects with photonic structures for new functionalities and higher emission rates. The article explores the potential applications of quantum sensing in several fields, such as superconductivity, ferromagnetism, 2D nanoelectronics, and biology. For instance, combining nanoscale microfluidic technology with nanopore and quantum sensing may lead to a new platform for DNA sequencing. As materials technology continues to evolve, and with the advancement of defect engineering techniques, 2D spin defects are expected to play a vital role in quantum sensing.

Nanodiamond Coating in Energy and Engineering Fields: Synthesis Methods, Characteristics, and Applications

Nanodiamonds are metastable allotropes of carbon. Based on their high hardness, chemical inertness, high thermal conductivity, and wide bandgap, nanodiamonds are widely used in energy and engineering applications in the form of coatings, such as mechanical processing, nuclear engineering, semiconductors, etc., particularly focusing on the reinforcement in mechanical performance, corrosion resistance, heat transfer, and electrical behavior. In mechanical performance, nanodiamond coatings can elevate hardness and wear resistance, improve the efficiency of mechanical components, and concomitantly reduce friction, diminish maintenance costs, particularly under high-load conditions. Concerning chemical inertness and corrosion resistance, nanodiamond coatings are gradually becoming the preferred manufacturing material or surface modification material for equipment in harsh environments. As for heat transfer, the extremely high coefficient of thermal conductivity of nanodiamond coatings makes them one of the main surface modification materials for heat exchange equipment. The increase of nucleation sites results in excellent performance of nanodiamond coatings during the boiling heat transfer stage. Additionally, concerning electrical properties, nanodiamond coatings elevate the efficiency of solar cells and fuel cells, and great performance in electrochemical and electrocatalytic is found. This article will briefly describe the application and mechanism analysis of nanodiamonds in the above-mentioned fields.

Correlated Spectroscopy of Electric Noise with Color Center Clusters

Experimental noise often contains information about the interactions of a system with its environment, but establishing a relation between the measured time fluctuations and the underlying physical observables is rarely apparent. Here, we leverage a multidimensional and multisensor analysis of spectral diffusion to investigate the dynamics of trapped carriers near subdiffraction clusters of nitrogen-vacancy (NV) centers in diamond. We establish statistical correlations in the spectral fluctuations we measure as we recursively probe the cluster optical resonances, which we then exploit to reveal proximal traps. Further, we deterministically induce Stark shifts in the cluster spectrum, ultimately allowing us to pinpoint the relative three-dimensional positions of interacting NVs as well as the location and charge sign of surrounding traps. Our results can be generalized to other color centers and provide opportunities for the characterization of photocarrier dynamics in semiconductors and the manipulation of nanoscale spin-qubit clusters connected via electric fields.

High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond

Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm2 V-1 s-1 at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

Control and Entanglement of Individual Rydberg Atoms near a Nanoscale Device

Coherent control of Rydberg atoms near dielectric surfaces is a major challenge due to the large sensitivity of Rydberg states to electric fields. We demonstrate coherent single-atom operations and two-qubit entanglement as close as 100  μm from a nanophotonic device. Using the individual atom control enabled by optical tweezers to study the spatial and temporal properties of the electric field from the surface, we employ dynamical decoupling techniques to characterize and cancel the electric-field noise with submicrosecond temporal resolution. We further use entanglement-assisted sensing to accurately map magnitude and direction of electric-field gradients on a micrometer scale. Our observations open a path for integration of Rydberg arrays with micro- and nanoscale devices for applications in quantum networking and quantum information science.

Diamond surface functionalization via visible light-driven C-H activation for nanoscale quantum sensing

Nitrogen-vacancy (NV) centers in diamond are a promising platform for nanoscale NMR sensing. Despite significant progress toward using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. Such sensing requires that target molecules are immobilized within nanometers of NV centers with long spin coherence. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C-H bonds on single-crystal diamond surfaces under ambient conditions using visible light, forming C-F, C-Cl, C-S, and C-N bonds at the surface. This method is compatible with NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof-of-principle demonstration, we use shallow ensembles of NV centers to detect nuclear spins from surface-bound functional groups. Our approach to surface functionalization opens the door to deploying NV centers as a tool for chemical sensing and single-molecule spectroscopy.

Charge Stability and Charge-State-Based Spin Readout of Shallow Nitrogen-Vacancy Centers in Diamond

Spin-based applications of the negatively charged nitrogen-vacancy (NV) center in diamonds require an efficient spin readout. One approach is the spin-to-charge conversion (SCC), relying on mapping the spin states onto the neutral (NV0) and negative (NV-) charge states followed by a subsequent charge readout. With high charge-state stability, SCC enables extended measurement times, increasing precision and minimizing noise in the readout compared to the commonly used fluorescence detection. Nanoscale sensing applications, however, require shallow NV centers within a few nanometers distance from the surface where surface related effects might degrade the NV charge state. In this article, we investigate the charge state initialization and stability of single NV centers implanted ≈5 nm below the surface of a flat diamond plate. We demonstrate the SCC protocol on four shallow NV centers suitable for nanoscale sensing, obtaining a reduced readout noise of 5-6 times the spin-projection noise limit. We investigate the general applicability of the SCC for shallow NV centers and observe a correlation between the NV charge-state stability and readout noise. Coating the diamond with glycerol improves both the charge initialization and stability. Our results reveal the influence of the surface-related charge environment on the NV charge properties and motivate further investigations to functionalize the diamond surface with glycerol or other materials for charge-state stabilization and efficient spin-state readout of shallow NV centers suitable for nanoscale sensing.

Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures

The negatively charged silicon vacancy center (SiV-) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV- centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV- with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV- for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.