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Zhang Y, Zhou R, Liu X, Bi Z, Ruan S, Ma Y, Li X, Liu C, Chen Y, Zhou J. Sol-Gel Synthesized Amorphous (In xGa 1-x) 2O 3 for UV Photodetection with High Responsivity. SENSORS (BASEL, SWITZERLAND) 2024; 24:787. [PMID: 38339504 PMCID: PMC10857313 DOI: 10.3390/s24030787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 01/13/2024] [Accepted: 01/23/2024] [Indexed: 02/12/2024]
Abstract
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1-x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1-x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.
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Affiliation(s)
- Yupeng Zhang
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Ruiheng Zhou
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Xinyan Liu
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Zhengyu Bi
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Yan Ma
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Xin Li
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Caixia Liu
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Yu Chen
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Jingran Zhou
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
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Kim N, Jeon SB, Jang BC. Hardware-Intrinsic Physical Unclonable Functions by Harnessing Nonlinear Conductance Variation in Oxide Semiconductor-Based Diode. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:675. [PMID: 36839043 PMCID: PMC9962066 DOI: 10.3390/nano13040675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 02/07/2023] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
With the advancement of the Internet of Things (IoT), numerous electronic devices are connected to each other and exchange a vast amount of data via the Internet. As the number of connected devices increases, security concerns have become more significant. As one of the potential solutions for security issues, hardware intrinsic physical unclonable functions (PUFs) are emerging semiconductor devices that exploit inherent randomness generated during the manufacturing process. The unclonable security key generated from PUF can address the inherent limitations of conventional electronic systems which depend solely on software. Although numerous PUFs based on the emerging memory devices requiring switching operations have been proposed, achieving hardware intrinsic PUF with low power consumption remains a key challenge. Here, we demonstrate that the process-induced nonlinear conductance variations of oxide semiconductor-based Schottky diodes provide a suitable source of entropy for the implementation of PUF without switching operation. Using a mild oxygen plasma treatment, the surface electron accumulation layer that forms naturally in oxide semiconductor film can be partially eliminated, resulting in a large variation of nonlinearity as an exotic entropy source. The mild plasma-treated Schottky diodes showed near ideal 50% average uniformity and uniqueness, as well as an ideal entropy value without the need for additional hardware area and power costs. These findings will pave the way for the development of hardware intrinsic PUFs to realize energy-efficient cryptographic hardware.
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Affiliation(s)
- Namju Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Seung-Bae Jeon
- Department of Electronic Engineering, Hanbat National University, 125 Dongseo-daero, Yuseong-gu, Daejeon 34158, Republic of Korea
| | - Byung Chul Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
- School of Electronics Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
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Lee S, Nam K, Kim JH, Hong GY, Kim SD. Effects of Seed-Layer N 2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures. NANOMATERIALS 2021; 11:nano11082011. [PMID: 34443842 PMCID: PMC8398532 DOI: 10.3390/nano11082011] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Revised: 07/30/2021] [Accepted: 08/03/2021] [Indexed: 11/16/2022]
Abstract
The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N2O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 105 A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.
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Yu H, Liao Q, Kang Z, Wang Z, Liu B, Zhang X, Du J, Ou Y, Hong M, Xiao J, Zhang Z, Zhang Y. Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005520. [PMID: 33136343 DOI: 10.1002/smll.202005520] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2020] [Indexed: 06/11/2023]
Abstract
The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 104 A W-1 ) and detectivity (D* = 6.83 × 1014 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τR = 3.97 s, τD = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.
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Affiliation(s)
- Huihui Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhenyu Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Junli Du
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yang Ou
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Jiankun Xiao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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Khan F, Ajmal HMS, Nam K, Kim SD. Enhancement in the photonic response of ZnO nanorod-gated AlGaN/GaN HEMTs with N2O plasma treatment. OPTICS EXPRESS 2020; 28:27688-27701. [PMID: 32988057 DOI: 10.1364/oe.399888] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/26/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate an improvement in the photoresponse characteristics of ultraviolet (UV) photodetectors (PDs) using the N2O plasma-treated ZnO nanorod (NR) gated AlGaN/GaN high electron mobility transistor (HEMT) structure. The PDs fabricated with ZnO NRs plasma-treated for 6 min show superior performance in terms of responsivity (∼1.54×10 5 A/W), specific detectivity (∼ 4.7×1013 cm·Hz-1/2/W), and on/off current ratio (∼40). These improved performance parameters are the best among those from HEMT-based PDs reported to date. Photoluminescence analysis shows a significant enhancement in near band edge emission due to the effective suppression of native defects near the surface of ZnO NRs after plasma treatment. As our X-ray photoelectron spectroscopy reveals a very high O/Zn ratio of ∼0.96 from the NR samples plasma-treated for 6 min, the N2O plasma radicals also show a clear impact on ZnO stoichiometry. From our X-ray diffraction analysis, the plasma-treated ZnO NRs show much greater improvement in (002) peak intensity and degree of (002) orientation (∼0.996) than those of as-grown NRs. This significant enhancement in (002) degree of orientation and stoichiometry in ZnO nano-crystals contribute to the enhancement in photoresponse characteristics of the PDs.
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Chang SP, Chang LY, Li JY. The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors. SENSORS 2016; 16:s16122145. [PMID: 27983694 PMCID: PMC5191125 DOI: 10.3390/s16122145] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2016] [Revised: 12/08/2016] [Accepted: 12/12/2016] [Indexed: 11/16/2022]
Abstract
A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively.
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Affiliation(s)
- Sheng-Po Chang
- Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Li-Yang Chang
- Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Jyun-Yi Li
- Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan.
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Chung WS, Yang SM, Kim TW, Hong JP. Ultrathin Co-O oxide layer-driven perpendicular magnetic anisotropy in a CoO/[Co/Pd] m multilayer matrix upon annealing. Sci Rep 2016; 6:37503. [PMID: 27886211 PMCID: PMC5122862 DOI: 10.1038/srep37503] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2016] [Accepted: 10/28/2016] [Indexed: 11/09/2022] Open
Abstract
Ferromagnetic/noble metal multilayer (ML) frames are expected to serve as reliable building blocks in a variety of perpendicular magnetic anisotropy (PMA) based spintronic devices. However, ultrathin ML matrices are highly susceptible to unintended reduction of electron spin polarization in the as-grown or annealed states and often require a large repeat number. Here, we introduce a simple approach to achieve thermally stable PMA in ultrathin [Co/Pd]3 MLs involving the incorporation of an ultrathin CoO capping layer. The thickness and oxygen content of the CoO layer are critical parameters to achieve enhanced PMA in ultrathin [Co/Pd]3/CoO MLs post-annealed up to 400 °C. An extensive analysis of structural features identified that robust PMA characteristics in [Co/Pd]3/CoO MLs are linked with thermally activated oxygen atom diffusion leading to structural reconfiguration upon annealing. The possible origin of the enhanced PMA in our [Co/Pd]3/CoO ML samples after high-temperature annealing is discussed, thereby enabling their use in future spintronic-related devices.
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Affiliation(s)
- Woo Seong Chung
- Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
| | - Seung Mo Yang
- Novel Functional Materials and Devices Laboratory, Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul, 133-791, South Korea
| | - Tae Whan Kim
- Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
| | - Jin Pyo Hong
- Novel Functional Materials and Devices Laboratory, Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul, 133-791, South Korea
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Sheng J, Park J, Choi DW, Lim J, Park JS. A Study on the Electrical Properties of Atomic Layer Deposition Grown InO x on Flexible Substrates with Respect to N 2O Plasma Treatment and the Associated Thin-Film Transistor Behavior under Repetitive Mechanical Stress. ACS APPLIED MATERIALS & INTERFACES 2016; 8:31136-31143. [PMID: 27798828 DOI: 10.1021/acsami.6b11815] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Indium oxide (InOx) films were deposited at low processing temperature (150 °C) by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (InCA-1) as the metal precursor and hydrogen peroxide (H2O2) as the oxidant. As-deposited InOx exhibits a metallic conductor-like behavior owing to a relatively high free-carrier concentration. In order to control the electron density in InOx layers, N2O plasma treatment was carried out on the film surface. The exposure time to N2O plasma was varied (600-2400 s) to evaluate its effect on the electrical properties of InOx. In this regard, thin-film transistors (TFTs) utilizing this material as the active layer were fabricated on polyimide substrates, and transfer curves were measured. As the plasma treatment time increases, the TFTs exhibit a transition from metal-like conductor to a high-performance switching device. This clearly demonstrates that the N2O plasma has an effect of diminishing the carrier concentration in InOx. The combination of low-temperature ALD and N2O plasma process offers the possibility to achieve high-performance devices on polymer substrates. The electrical properties of InOx TFTs were further examined with respect to various radii of curvature and repetitive bending of the substrate. Not only does prolonged cyclic mechanical stress affect the device properties, but the bending direction is also found to be influential. Understanding such behavior of flexible InOx TFTs is anticipated to provide effective ways to design and achieve reliable electronic applications with various form factors.
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Affiliation(s)
- Jiazhen Sheng
- Division of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Jozeph Park
- Department of Materials Science and Engineering, KAIST , 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Dong-Won Choi
- Division of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Junhyung Lim
- Display Research and Development Center, Samsung Display Company, Limited , Yongin 446-711, Republic of Korea
| | - Jin-Seong Park
- Division of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro Seongdong-gu, Seoul, 04763, Republic of Korea
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Chong SK, Azizan SNA, Chan KW, Nguyen HQ, Chiu WS, Aspanut Z, Dee CF, Rahman SA. Structure deformation of indium oxide from nanoparticles into nanostructured polycrystalline films by in situ thermal radiation treatment. NANOSCALE RESEARCH LETTERS 2013; 8:428. [PMID: 24134646 PMCID: PMC3853438 DOI: 10.1186/1556-276x-8-428] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/16/2013] [Accepted: 10/02/2013] [Indexed: 06/02/2023]
Abstract
A microstructure deformation of indium oxide (In2O3) nanoparticles by an in situ thermal radiation treatment in nitrous oxide plasma was investigated. The In2O3 nanoparticles were completely transformed into nanostructured In2O3 films upon 10 min of treatment time. The treated In2O3 nanoparticle sample showed improvement in crystallinity while maintaining a large surface area of nanostructure morphology. The direct transition optical absorption at higher photon energy and the electrical conductivity of the In2O3 nanoparticles were significantly enhanced by the treatment.
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Affiliation(s)
- Su Kong Chong
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia
| | - Siti Nur Azieani Azizan
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia
| | - Kee Wah Chan
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia
| | - Hong-Quan Nguyen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Wee Siong Chiu
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia
| | - Zarina Aspanut
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia
| | - Chang Fu Dee
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi, Selangor 43600, Malaysia
| | - Saadah Abdul Rahman
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia
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Kim S, Kim H, Janes DB, Ju S. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements. NANOTECHNOLOGY 2013; 24:305201. [PMID: 23807306 DOI: 10.1088/0957-4484/24/30/305201] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Due to the large surface-to-volume ratio of nanowires, the quality of nanowire-insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current-voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ~1.20 × 10(-2). Upon N2 plasma treatment with N2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ~4.99 × 10(-3) (8.14 × 10(-3)). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.
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Affiliation(s)
- Seongmin Kim
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
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