Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

Lattice modulation strategies for 2D material assisted epitaxial growth

As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method.

Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions

This paper explores the optical properties of an exfoliated MoSe₂ monolayer implanted with Cr⁺ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe₂ reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterized by nonzero activation energy, long lifetimes, and weak response to the magnetic field. To rationalize the experimental results and get insights into the atomic structure of the defects, we modeled the Cr-ion irradiation process using ab initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low-energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of two-dimensional (2D) materials by doping.

Real-Time Ellipsometry at High and Low Temperatures

Among the many available real-time characterization methods, ellipsometry stands out with the combination of high sensitivity and high speed as well as nondestructive, spectroscopic, and complex modeling capabilities. The thicknesses of thin films such as the complex dielectric function can be determined simultaneously with precisions down to sub-nanometer and 10^-4, respectively. Consequently, the first applications of high- and low-temperature real-time ellipsometry have been related to the monitoring of layer growth and the determination of optical properties of metals, semiconductors, and superconductors, dating back to the late 1960s. Ellipsometry has been ever since a steady alternative of nonpolarimetric spectroscopies in applications where quantitative information (e.g., thickness, crystallinity, porosity, band gap, absorption) is to be determined in complex layered structures. In this article the main applications and fields of research are reviewed.

Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2)

A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS₂, MoSe₂, and MoTe₂ are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX₂ series as 5.86, 5.40, and 5.00 eV for MoSe₂, MoSe₂, and MoTe₂, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work.

Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation

Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe₂ thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 10¹⁵ cm^-2, we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe₂ thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. Effect of He⁺ irradiation on thermoelectric properties of MoSe₂ thin films.

Thermal Conductivity of Large-Area Polycrystalline MoSe2 Films Grown by Chemical Vapor Deposition

It is of great importance to understand the thermal properties of MoSe₂ films for electronic and optoelectronic applications. In this work, large-area polycrystalline MoSe₂ films are prepared using a low-cost, controllable, large-scale, and repeatable chemical vapor deposition method, which facilitates direct device fabrication. Raman spectra and X-ray diffraction patterns indicate a hexagonal (2H) crystal structure of the MoSe₂ film. Ellipsometric spectra analysis indicates that the optical band gap of the MoSe₂ film is estimated to be ∼1.23 eV. From the analysis of the temperature-dependent and laser-power-dependent Raman spectra, the thermal conductivity of the suspended MoSe₂ films is found to be ∼28.48 W/(m·K) at room temperature. The results can provide useful guidance for an effective thermal management of large-area polycrystalline MoSe₂-based electronic and optoelectronic devices.

Metal dichalcogenide nanomeshes: structural, electronic and magnetic properties

Motivated by the successful preparation of two-dimensional transition metal dichalcogenide (2D-TMD) nanomeshes in the last three years, we use density functional theory (DFT) to study the structural stability, mechanical, magnetic, and electronic properties of porous 2H-MoX₂ (X = S, Se and Te) without and with pore passivation. We consider structures with multiple, systematically created pores. The molecular dynamics simulations and cohesive energy calculations showed the stability of the 2D-TMD nanomeshes, with larger stability for those with smaller pores. The lattice undergoes some deformations to accommodate the pore energetically, and as the pore size increases Young's modulus decreases. In most cases, the missing metal atoms disrupt the spin states' even population, resulting in some nanomeshes becoming magnetic. The electronic gaps of the MoX₂ nanomesh systems are diminished because of the emergence of pore-edge localized mid-gap metal 4d states in the spin-polarized spectrum, making some systems half-metallic. The oxygen passivation of the pore edges of 2D-TMD nanomeshes restores the even population of spin states, and makes those systems metallic. Our results can be used in different applications such as spintronics, ion chelation, and molecular sensing applications.

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS2 by Twisted Light

Twisted light carries a well-defined orbital angular momentum (OAM) of lℏ per photon. The quantum number l of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultrawide bandwidth optical communication structures. In spite of its interesting properties, twisted light interaction with solid state materials, particularly two-dimensional materials, is yet to be extensively studied via experiments. In this work, photoluminescence (PL) spectroscopy studies of monolayer molybdenum disulfide (MoS₂), a material with ultrastrong light-matter interaction due to reduced dimensionality, are carried out under photoexcitation of twisted light. It is observed that the measured spectral peak energy increases for every increment of l of the incident light. The nonlinear l-dependence of the spectral blue shifts is well accounted for by the analysis and computational simulation of this work. More excitingly, the twisted light excitation revealed the unusual lightlike exciton band dispersion of valley excitons in monolayer transition metal dichalcogenides. This linear exciton band dispersion is predicted by previous theoretical studies and evidenced via this work's experimental setup.

Temperature-dependent optical and vibrational properties of PtSe2 thin films

PtSe₂ has received substantial research attention because of its intriguing physical properties and potential practical applications. In this paper, we investigated the optical properties of bilayer and multilayer PtSe₂ thin films through spectroscopic ellipsometry over a spectral range of 0.73-6.42 eV and at temperatures between 4.5 and 500 K. At room temperature, the spectra of refractive index exhibited several anomalous dispersion features below 1000 nm and approached a constant value in the near-infrared frequency range. The thermo-optic coefficients of bilayer and multilayer PtSe₂ thin films were (4.31 ± 0.04) × 10^-4/K and (-9.20 ± 0.03) × 10^-4/K at a wavelength of 1200 nm. Analysis of the optical absorption spectrum at room temperature confirmed that bilayer PtSe₂ thin films had an indirect band gap of approximately 0.75 ± 0.01 eV, whereas multilayer PtSe₂ thin films exhibited semimetal behavior. The band gap of bilayer PtSe₂ thin films increased to 0.83 ± 0.01 eV at 4.5 K because of the suppression of electron-phonon interactions. Furthermore, the frequency shifts of Raman-active E_g and A_1g phonon modes of both thin films in the temperature range between 10 and 500 K accorded with the predictions of the anharmonic model. These results provide basic information for the technological development of PtSe₂-based optoelectronic and photonic devices at various temperatures.

Temperature-dependent optical constants of monolayer [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text]: spectroscopic ellipsometry and first-principles calculations

The temperature-dependent ([Formula: see text]) optical constants of monolayer [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text] were investigated through spectroscopic ellipsometry over the spectral range of 0.73-6.42 eV. At room temperature, the spectra of refractive index exhibited several anomalous dispersion features below 800 nm and approached a constant value of 3.5-4.0 in the near-infrared frequency range. With a decrease in temperature, the refractive indices decreased monotonically in the near-infrared region due to the temperature-dependent optical band gap. The thermo-optic coefficients at room temperature had values from [Formula: see text] to [Formula: see text] for monolayer transition metal dichalcogenides at a wavelength of 1200 nm below the optical band gap. The optical band gap increased with a decrease in temperature due to the suppression of electron-phonon interactions. On the basis of first-principles calculations, the observed optical excitations at 4.5 K were appropriately assigned. These results provide basic information for the technological development of monolayer transition metal dichalcogenides-based photonic devices at various temperatures.

Nonmonotonic thickness-dependence of in-plane thermal conductivity of few-layered MoS2: 2.4 to 37.8 nm

Recent first-principles modeling reported a decrease of in-plane thermal conductivity (k) with increased thickness for few layered MoS2, which results from the change in phonon dispersion and missing symmetry in the anharmonic atomic force constant. For other 2D materials, it has been well documented that a higher thickness could cause a higher in-plane k due to a lower density of surface disorder. However, the effect of thickness on the k of MoS2 has not been systematically uncovered by experiments. In addition, from either experimental or theoretical approaches, the in-plane k value of tens-of-nm-thick MoS2 is still missing, which makes the physics on the thickness-dependent k remain ambiguous. In this work, we measure the k of few-layered (FL) MoS2 with thickness spanning a large range: 2.4 nm to 37.8 nm. A novel five energy transport state-resolved Raman (ET-Raman) method is developed for the measurement. For the first time, the critical effects of hot carrier diffusion, electron-hole recombination, and energy coupling with phonons are taken into consideration when determining the k of FL MoS2. By eliminating the use of laser energy absorption data and Raman temperature calibration, unprecedented data confidence is achieved. A nonmonotonic thickness-dependent k trend is discovered. k decreases from 60.3 W m-1 K-1 (2.4 nm thick) to 31.0 W m-1 K-1 (9.2 nm thick), and then increases to 76.2 W m-1 K-1 (37.8 nm thick), which is close to the reported k of bulk MoS2. This nonmonotonic behavior is analyzed in detail and attributed to the change of phonon dispersion for very thin MoS2 and a reduced surface scattering effect for thicker samples.

Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe₂ on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe₂. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe₂. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.

Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride

Molybdenum diselenide (MoSe₂) is a promising two-dimensional material for next-generation electronics and optoelectronics. However, its application has been hindered by a lack of large-scale synthesis. Although chemical vapor deposition (CVD) using laboratory furnaces has been applied to grow two-dimensional (2D) MoSe₂ cystals, no continuous film over macroscopically large area has been produced due to the lack of uniform control in these systems. Here, we investigate the molecular beam epitaxy (MBE) of 2D MoSe₂ on hexagonal boron nitride (hBN) substrate, where highly crystalline MoSe₂ film can be grown with electron mobility ∼15 cm²/(V s). Scanning transmission electron microscopy (STEM) shows that MoSe₂ grains grown at an optimum temperature of 500 °C are highly oriented and coalesced to form continuous film with predominantly mirror twin boundaries. Our work suggests that van der Waals epitaxy of 2D materials is tolerant of lattice mismatch but is facilitated by substrates with similar symmetry.

Temperature Dependence of the Dielectric Function of Monolayer MoSe2

The dielectric function [Formula: see text] of monolayer molybdenum diselenide (MoSe₂) is obtained and analyzed at temperatures from 31 to 300 K and at energies from 0.74 to 6.42 eV. The sample is a large-area, partially discontinuous monolayer (submonolayer) film of MoSe₂ grown on a sapphire substrate by selenization of pulsed laser deposited MoO₃ film. Morphological and optical characterizations verified the excellent quality of the film. The MoSe₂ data were analyzed using the effective medium approximation, which treats the film and bare substrate regions as a single layer. Second derivatives of ε with respect to energy were numerically calculated and analyzed with standard lineshapes to extract accurate critical-point (CP) energies. We find only 6 CPs for monolayer MoSe₂ at room temperature. At cryogenic temperatures 6 additional structures are resolved. The separations in the B- and C-excitonic peaks are also observed. All structures blue-shift and sharpen with decreasing temperature as a result of the reducing lattice constant and electron-phonon interactions. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose-Einstein statistical factor and the temperature coefficient.