Active tuning of longitudinal strong coupling between anisotropic borophene plasmons and Bloch surface waves

Dynamically Adjusting Borophene-Based Plasmon-Induced Transparency in a Polymer-Separated Hybrid System for Broadband-Tunable Sensing

Borophene, an emerging two-dimensional (2D) material platform, is capable of supporting highly confined plasmonic modes in the visible and near-infrared wavebands. This provides a novel building block for light manipulation at the deep subwavelength scale, thus making it well-suited for designing ultracompact optical devices. Here, we theoretically explore a borophene-based plasmonic hybrid system comprising a continuous borophene monolayer (CBM) and sodium nanostrip gratings (SNGs), separated by a polymer spacer layer. In such a structure, a dynamically tunable plasmon-induced transparency (PIT) effect can be achieved by strongly coupling dark and bright plasmonic modes, while actively controlling borophene. Here, the bright mode is generated through the localized plasmon resonance of SNGs when directly excited by TM-polarized incident light. Meanwhile, the dark mode corresponds to a propagating borophene surface plasmon (BSP) mode in the CBM waveguide, which cannot be directly excited, but requires phase matching with the assistance of SNGs. The thickness of the polymer layer has a significant impact on the coupling strength of the two modes. Owing to the BSP mode, highly sensitive to variations in the ambient refractive index (RI), this borophene-based hybrid system exhibits a good RI-sensing performance (643.8 nm/RIU) associated with a wide range of dynamically adjustable wavebands (1420-2150 nm) by tuning the electron density of borophene. This work offers a novel concept for designing active plasmonic sensors dependent on electrically gating borophene, which has promising applications in next-generation point-of-care (PoC) biomedical diagnostic techniques.

Giant photonic spin Hall effect in bilayer borophene metasurfaces

We investigate theoretically the photonic spin Hall effect (PSHE) in bilayer borophene metasurfaces. Based on the combined effect of the Fabry-Perot resonance of the bilayer system and the resonant interaction of individual meta-atoms in borophene metasurface which lead to the topological transition, it is found that there exist giant PSHE shifts of the transmitted beams which can be flexibly regulated by adjusting the twist angle of metasurface bilayers, incident angle, spacer refractive index and spacer thickness. Near the topological transition of borophene metasurface the magnitude of PHSE shifts in bilayer borophene metasurfaces is generally on the order of tens of wavelengths and even on the order of hundreds of wavelengths near the epsilon-near-zero (ENZ) regions. The manipulation frequency range of the large PSHE shifts can reach hundreds of terahertz or even picohertz through adjusting the ribbon width of borophene metasurface or the electron density for borophene. It is found that in bilayer borophene metasurfaces there exist the ultrahigh sensitivity of the PSHE shifts to spacer refractive index, which can be applied to design the refractive index sensors with high performance.

Bloch surface waves assisted active modulation of graphene electro-absorption in a wide near-infrared region

Light modulation has been recognized as one of the most fundamental operations in photonics. In this paper, we theoretically designed a Bloch surface wave assisted modulator for the active modulation of graphene electro-absorption. Simulations show that the strong localized electrical field generated by Bloch surface waves can significantly enhance the graphene electro-absorption up to 99.64%. Then by gate-tuning the graphene Fermi energy to transform graphene between a lossy and a lossless material, electrically switched absorption of graphene with maximum modulation depth of 97.91% can be achieved. Meanwhile, by further adjusting the incident angle to tune the resonant wavelength of Bloch surface waves, the center wavelength of the modulator can be actively controlled. This allows us to realize the active modulation of graphene electro-absorption within a wide near-infrared region, including the commercially important telecommunication wavelength of 1550 nm, indicating the excellent performance of the designed modulator via such mechanism. Such Bloch surface waves assisted wavelength-tunable graphene electro-absorption modulation strategy opens up a new avenue to design graphene-based selective multichannel modulators, which is unavailable in previous reported strategies that can be only realized by passively changing the structural parameters.

Dynamical manipulation of a dual-polarization plasmon-induced transparency employing an anisotropic graphene-black phosphorus heterostructure

Dynamical tunable plasmon-induced transparency (PIT) possesses the unique characteristics of controlling light propagation states, which promises numerous potential applications in efficient optical signal processing chips and nonlinear optical devices. However, previously reported configurations are sensitive to polarization and can merely operate under specific single polarization. In this work we propose an anisotropic PIT metamaterial device based on a graphene-black phosphorus (G-BP) heterostructure to realize a dual-polarization tunable PIT effect. The destructive interference coupling between the bright mode and dark modes under the orthogonal polarization state pronounced anisotropic PIT phenomenon. The coupling strength of the PIT system can be modulated by dynamically manipulating the Fermi energy of the graphene via the external electric field voltage. Moreover, the three-level plasmonic system and the coupled oscillator model are employed to explain the underlying mechanism of the PIT effect, and the analytical results show good consistency with the numerical calculations. Compared to the single-polarization PIT devices, the proposed device offers additional degrees of freedom in realizing universal tunable functionalities, which could significantly promote the development of next-generation integrated optical processing chips, optical modulation and slow light devices.