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Day AM, Dietz JR, Sutula M, Yeh M, Hu EL. Laser writing of spin defects in nanophotonic cavities. NATURE MATERIALS 2023:10.1038/s41563-023-01544-x. [PMID: 37106131 DOI: 10.1038/s41563-023-01544-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 03/28/2023] [Indexed: 05/11/2023]
Abstract
High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex situ defect formation systems prevent real-time analysis, and previous in situ methods are limited to bulk substrates or require further processing to improve the emitter properties1-6. Here we demonstrate the direct laser writing of cavity-integrated spin defects using a nanosecond pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon-monovacancy defect formation within the approximately 200 nm3 cavity-mode volume. We observe spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without the need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold and show the single-shot annealing of intrinsic background defects at silicon-monovacancy formation sites. This real-time in situ method of localized defect formation, paired with cavity-integrated defect spins, is necessary towards engineering cavity-emitter coupling for quantum networking.
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Affiliation(s)
- Aaron M Day
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Jonathan R Dietz
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Madison Sutula
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Matthew Yeh
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Evelyn L Hu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
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Gan L, Zhang D, Zhang R, Zhang Q, Sun H, Li Y, Ning CZ. Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride. ACS NANO 2022; 16:14254-14261. [PMID: 35981092 DOI: 10.1021/acsnano.2c04386] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Single-photon emitters (SPEs) play an important role in many optical quantum technologies. However, an efficient large-scale approach to the generation of high-quality SPE arrays remains an elusive goal at room temperature. Here, we demonstrate a scalable method of generating SPE arrays in hexagonal boron nitride (hBN) with high yield, brightness, and purity using single-pulse irradiation by a femtosecond laser. Our use of a single pulse per defect pattern minimized heat-related damages and improved the purity of SPEs compared with the previous laser-based approaches. Under the optimized fabrication and post-treatment conditions, SPE arrays were successfully generated from the 3.0 μm defect patterns with 43% yield, the highest among the 2D-based top-down approaches. Importantly, we found that 100% of the bright defect patterns are SPEs with g2(0) < 0.5 under such conditions, with the lowest g2(0) = 0.06 ± 0.03. Our SPEs also exhibit the highest brightness with the saturation SPE rate at 7.15 million counts per second. We believe that our overall high-quality and large-scale approach will help a wide range of applications of SPEs in on-chip quantum technologies.
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Affiliation(s)
- Lin Gan
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
| | - Danyang Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Ruiling Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Qiyao Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Hao Sun
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
| | - Yongzhuo Li
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
| | - Cun-Zheng Ning
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
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Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors. NANOMATERIALS 2020; 11:nano11010072. [PMID: 33396227 PMCID: PMC7823324 DOI: 10.3390/nano11010072] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 12/26/2020] [Accepted: 12/26/2020] [Indexed: 12/31/2022]
Abstract
Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.
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Liu J, Xu Z, Song Y, Wang H, Dong B, Li S, Ren J, Li Q, Rommel M, Gu X, Liu B, Hu M, Fang F. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser. NANOTECHNOLOGY AND PRECISION ENGINEERING 2020. [DOI: 10.1016/j.npe.2020.11.003] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Affiliation(s)
- Jiayu Liu
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Zongwei Xu
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Ying Song
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Hong Wang
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin
300387, China
| | - Bing Dong
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Shaobei Li
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Jia Ren
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026,
China
| | - Mathias Rommel
- Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10,
Erlangen 91058, Germany
| | - Xinhua Gu
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Bowen Liu
- Ultrafast Laser Lab, Tianjin University, Tianjin 300072, China
| | - Minglie Hu
- Ultrafast Laser Lab, Tianjin University, Tianjin 300072, China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
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Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, Babin C, Erlekampf J, Berwian P, Booth MJ, Wrachtrup J. Laser Writing of Scalable Single Color Centers in Silicon Carbide. NANO LETTERS 2019; 19:2377-2383. [PMID: 30882227 DOI: 10.1021/acs.nanolett.8b05070] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems ( Awschalom et al. Nat. Photonics 2018 , 12 , 516 - 527 ; Atatüre et al. Nat. Rev. Mater. 2018 , 3 , 38 - 51 ). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing VSi centers and concluded that there are about 16 photons involved in the laser writing VSi center process. Our results represent a powerful tool in the fabrication of single VSi centers in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.
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Affiliation(s)
- Yu-Chen Chen
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Patrick S Salter
- Department of Engineering Science , University of Oxford , Parks Road , Oxford OX1 3PJ , United Kingdom
| | - Matthias Niethammer
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Matthias Widmann
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Florian Kaiser
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Roland Nagy
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Naoya Morioka
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Charles Babin
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | | | | | - Martin J Booth
- Department of Engineering Science , University of Oxford , Parks Road , Oxford OX1 3PJ , United Kingdom
| | - Jörg Wrachtrup
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
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