Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip

Non-resonant Bragg scattering four-wave mixing at near-visible wavelengths in low-confinement silicon nitride waveguides

Quantum state coherent frequency conversion processes-such as Bragg-scattering four-wave mixing (BSFWM)-hold promise as a flexible technique for networking heterogeneous and distant quantum systems. In this Letter, we demonstrate BSFWM within an extended (1.2-m) low-confinement silicon nitride waveguide and show that this system has the potential for near-unity frequency conversion in visible and near-visible wavelength ranges. Using sensitive classical heterodyne laser spectroscopy at low optical powers, we characterize the Kerr coefficient (∼1.55 W-1m-1) and linear propagation loss (∼0.0175 dB/cm) of this non-resonant waveguide system, revealing a record-high nonlinear figure of merit (NFM = γ/α ≈ 3.85 W-1) for BSFWM of near-visible light in non-resonant silicon nitride waveguides. We predict how, at high yet achievable on-chip optical powers, this NFM would yield a comparatively large frequency conversion efficiency, opening the door to near-unity flexible frequency conversion without cavity enhancement and resulting bandwidth constraints.

Highly Indistinguishable Single Photons from Droplet-Etched GaAs Quantum Dots Integrated in Single-Mode Waveguides and Beamsplitters

Integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performances, making the realization of these QDs into PICs highly appealing. Here, we show the first implementation in this direction, realizing the key passive elements needed in PICs, i.e., single-mode waveguides (WGs) with integrated GaAs-QDs and beamsplitters. We study the statistical distribution of wavelength, linewidth, and decay time of the excitonic line, as well as the quantum optical properties of individual emitters under resonant excitation. We achieve single-photon purities as high as 1 - g(2)(0) = 0.929 ± 0.009 and two-photon interference visibilities of up to VTPI = 0.953 ± 0.032 for consecutively emitted photons.

Telecom-band quantum dot technologies for long-distance quantum networks

A future quantum internet is expected to generate, distribute, store and process quantum bits (qubits) over the world by linking different quantum nodes via quantum states of light. To facilitate long-haul operations, quantum repeaters must operate at telecom wavelengths to take advantage of both the low-loss optical fibre network and the established technologies of modern optical communications. Semiconductor quantum dots have thus far shown exceptional performance as key elements for quantum repeaters, such as quantum light sources and spin-photon interfaces, but only in the near-infrared regime. Therefore, the development of high-performance telecom-band quantum dot devices is highly desirable for a future solid-state quantum internet based on fibre networks. In this Review, we present the physics and technological developments towards epitaxial quantum dot devices emitting in the telecom O- and C-bands for quantum networks, considering both advanced epitaxial growth for direct telecom emission and quantum frequency conversion for telecom-band down-conversion of near-infrared quantum dot devices. We also discuss the challenges and opportunities for future realization of telecom quantum dot devices with improved performance and expanded functionality through hybrid integration.

Spectral control of nonclassical light pulses using an integrated thin-film lithium niobate modulator

Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation, communication, and networking protocols, and for bridging spectral mismatch among various quantum systems. However, quantum spectral control requires a strong nonlinearity mediated by light, microwave, or acoustics, which is challenging to realize with high efficiency, low noise, and on an integrated chip. Here, we demonstrate both frequency shifting and bandwidth compression of heralded single-photon pulses using an integrated thin-film lithium niobate (TFLN) phase modulator. We achieve record-high electro-optic frequency shearing of telecom single photons over terahertz range (±641 GHz or ±5.2 nm), enabling high visibility quantum interference between frequency-nondegenerate photon pairs. We further operate the modulator as a time lens and demonstrate over eighteen-fold (6.55 nm to 0.35 nm) bandwidth compression of single photons. Our results showcase the viability and promise of on-chip quantum spectral control for scalable photonic quantum information processing.

Cryogenic and hermetically sealed packaging of photonic chips for optomechanics

We demonstrate a hermetically sealed packaging system for integrated photonic devices at cryogenic temperatures with plug-and-play functionality. This approach provides the ability to encapsulate a controlled amount of gas into the optical package allowing helium to be used as a heat-exchange gas to thermalize photonic devices, or condensed into a superfluid covering the device. This packaging system was tested using a silicon-on-insulator slot waveguide resonator which fills with superfluid ⁴He below the transition temperature. To optimize the fiber-to-chip optical integration 690 tests were performed by thermally cycling optical fibers bonded to various common photonic chip substrates (silicon, silicon oxide and HSQ) with a range of glues (NOA 61, NOA 68, NOA 88, NOA 86H and superglue). This showed that NOA 86H (a UV curing optical adhesive with a latent heat catalyst) provided the best performance under cryogenic conditions for all the substrates tested. The technique is relevant to superfluid optomechanics experiments, as well as quantum photonics and quantum optomechanics applications.

Converting single photons from an InAs/GaAs quantum dot into the ultraviolet: preservation of second-order correlations

Wavelength conversion at the single-photon level is required to forge a quantum network from distinct quantum devices. Such devices include solid-state emitters of single or entangled photons, as well as network nodes based on atoms or ions. Here we demonstrate the conversion of single photons emitted from a III-V semiconductor quantum dot at 853 nm via sum frequency conversion to the wavelength of the strong transition of Yb⁺ ions at 370 nm. We measure the second-order correlation function of both the unconverted and the converted photon and show that the single-photon character of the quantum dot emission is preserved during the conversion process.

Quantum-dot-based deterministic photon-emitter interfaces for scalable photonic quantum technology

The scale-up of quantum hardware is fundamental to realize the full potential of quantum technology. Among a plethora of hardware platforms, photonics stands out: it provides a modular approach where the main challenges lie in the construction of high-quality building blocks and in the development of methods to interface the modules. The subsequent scale-up could exploit mature integrated photonics foundry technology to produce small-footprint quantum processors of immense complexity. Solid-state quantum emitters can realize a deterministic photon-emitter interface and enable key quantum photonic resources and functionalities, including on-demand single- and multi-photon-entanglement sources, as well as photon-photon nonlinear quantum gates. In this Review, we use the example of quantum dot devices to present the physics of deterministic photon-emitter interfaces, including the main photonic building blocks required to scale up, and discuss quantitative performance benchmarks. While our focus is on quantum dot devices, the presented methods also apply to other quantum-emitter platforms such as atoms, vacancy centres, molecules and superconducting qubits. We also identify applications within quantum communication and computing, presenting a route towards photonics with a genuine quantum advantage.

Tunable frequency matching for efficient four-wave-mixing Bragg scattering in microrings

We propose and theoretically study a tunable frequency matching method for four-wave-mixing Bragg-scattering frequency conversion in microring resonators. A tunable coupling between the clockwise and counterclockwise propagating modes in the resonators was designed to introduce adjustable mode splitting, thus compensating for the frequency mismatching under different wavelengths. Using a silicon nitride ring resonator as an example, we showed that the tuning bandwidth approaches 35 number of FSRs. Numerical simulations further revealed that the phase-matching strategy is valid under different wavelength combinations and is robust to variations in waveguide geometry and fabrication. These results suggest promising applications in high-efficiency frequency conversion, integrated nonlinear photonics, and quantum optics.

Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV⁰) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV⁰ centers near the surface of diamond, the platform will enable Purcell enhancement of SiV⁰ emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.

Proposal for noise-free visible-telecom quantum frequency conversion through third-order sum and difference frequency generation

Quantum frequency conversion (QFC) between the visible and telecom is a key to connect quantum memories in fiber-based quantum networks. Current methods for linking such widely separated frequencies, such as sum/difference frequency generation and four-wave mixing Bragg scattering, are prone to broadband noise generated by the pump laser(s). To address this issue, we propose to use third-order sum/difference frequency generation (TSFG/TDFG) for an upconversion/downconversion QFC interface. In this process, two long wavelength pump photons combine their energy and momentum to mediate frequency conversion across the large spectral gap between the visible and telecom bands, which is particularly beneficial from the noise perspective. We show that waveguide-coupled silicon nitride microring resonators can be designed for efficient QFC between 606 and 1550 nm via a 1990 nm pump through TSFG/TDFG. We simulate the device dispersion and coupling, and from the simulated parameters, estimate that the frequency conversion can be efficient (${\gt}80 \%$) at 50 mW pump power. Our results suggest that microresonator TSFG/TDFG is promising for compact, scalable, and low-power QFC across large spectral gaps.

Resource-efficient frequency conversion for quantum networks via sequential four-wave mixing

We report a resource-efficient scheme in which a single pump laser was used to achieve frequency conversion by Bragg-scattering four-wave mixing in a photonic crystal fiber. We demonstrate bidirectional conversion of coherent light between Sr⁺²P_1/2→²D_3/2 emission wavelength at 1092 nm and the telecommunication C band with conversion efficiencies of 4.2% and 37% for up- and down-conversion, respectively. We discuss how the scheme may be viably scaled to meet the temporal, spectral, and polarization stability requirements of a hybrid light-matter quantum network.

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation

Self-assembled quantum dots grown by molecular beam epitaxy have been a hotbed for various fundamental research and device applications over the past decades. Among them, InAs/GaAs quantum dots have shown great potential for applications in quantum information, quantum computing, infrared photodetection, etc. Though intensively studied, some of the optical nonlinear properties of InAs/GaAs quantum dots, specifically the associated two-photon absorption of the wetting and barrier layers, have not been investigated yet. Here we report a study of the photoluminescence of these dots by using direct two-photon excitation. The quadratic power law dependence of the photoluminescence intensity, together with the ground-state resonant peak of quantum dots appearing in the photoluminescence excitation spectrum, unambiguously confirms the occurrence of the direct two-photon absorption in the dots. A three-level rate equation model is proposed to describe the photogenerated carrier dynamics in the quantum dot-wetting layer-GaAs system. Moreover, higher-order power law dependence of photoluminescence intensity is observed on both the GaAs substrate and the wetting layer by two-photon excitation, which is accounted for by a model involving the third-harmonic generation at the sample interface. Our results open a door for understanding the optical nonlinear effects associated with this fundamentally and technologically important platform.

Multiplexed Single-Photon Source Based on Multiple Quantum Dots Embedded within a Single Nanowire

Photonics-based quantum information technologies require efficient, high emission rate sources of single photons. Position-controlled quantum dots embedded within a broadband nanowire waveguide provide a fully scalable route to fabricating highly efficient single-photon sources. However, emission rates for single-photon devices are limited by radiative recombination lifetimes. Here, we demonstrate a multiplexed single-photon source based on a multidot nanowire. Using epitaxially grown nanowires, we incorporate multiple energy-tuned dots, each optimally positioned within the nanowire waveguide, providing single photons with high efficiency. This linear scaling of the single-photon emission rate with number of emitters is demonstrated using a five-dot nanowire with an average multiphoton emission probability of <4% when excited at saturation. This represents the first ever demonstration of multiple single-photon emitters deterministically incorporated in a single photonic device and is a major step toward achieving GHz single-photon emission rates from a scalable multi-quantum-dot system.

Advanced technologies for quantum photonic devices based on epitaxial quantum dots

Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on-demand generation of single-photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. In this review, we focus on the latest significant progress of QD photonic devices. We first discuss advanced technologies in QD growth, with special attention to droplet epitaxy and site-controlled QDs. Then we overview the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques. We extend our discussion to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light-emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.

A universal frequency engineering tool for microcavity nonlinear optics: multiple selective mode splitting of whispering-gallery resonances

Whispering-gallery microcavities have been used to realize a variety of efficient parametric nonlinear optical processes through the enhanced light-matter interaction brought about by supporting multiple high quality factor and small modal volume resonances. Critical to such studies is the ability to control the relative frequencies of the cavity modes, so that frequency matching is achieved to satisfy energy conservation. Typically this is done by tailoring the resonator cross-section. Doing so modifies the frequencies of all of the cavity modes, that is, the global dispersion profile, which may be undesired, for example, in introducing competing nonlinear processes. Here, we demonstrate a frequency engineering tool, termed multiple selective mode splitting (MSMS), that is independent of the global dispersion and instead allows targeted and independent control of the frequencies of multiple cavity modes. In particular, we show controllable frequency shifts up to 0.8 nm, independent control of the splitting of up to five cavity modes with optical quality factors ≳ 105, and strongly suppressed frequency shifts for untargeted modes. The MSMS technique can be broadly applied to a wide variety of nonlinear optical processes across different material platforms, and can be used to both selectively enhance processes of interest and suppress competing unwanted processes.

Hybrid integrated quantum photonic circuits

Recent developments in chip-based photonic quantum circuits has radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations including optical connectivity and operation conditions, then highlights several successful realizations of key physical resources for building a quantum-teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid state platform, which hold great potential for quantum information applications.

Actively-monitored periodic-poling in thin-film lithium niobate photonic waveguides with ultrahigh nonlinear conversion efficiency of 4600 %W-1cm-2

Chip-scale implementations of second-order nonlinear optics benefit from increased optical confinement that can lead to nonlinear interaction strengths that are orders of magnitude higher than bulk free-space configurations. Here, we present thin-film-based ultraefficient periodically-poled lithium niobate nonlinear waveguides, leveraging actively-monitored ferroelectric domain reversal engineering and nanophotonic confinement. The devices exhibit up to 4600 %W^-1cm^-2 conversion efficiency for second-harmonic generation, pumped around 1540 nm. In addition, we measure broadband sum-frequency generation across multiple telecom bands, from 1460 to 1620 nm. As an immediate application of the devices, we use pulses of picojoule-level energy to demonstrate second-harmonic generation with over 10% conversion in a 0.6-mm-long waveguide. Our ultracompact and highly efficient devices address growing demands in integrated-photonic frequency conversion, frequency metrology, atomic physics, and quantum optics, while offering a coherent link between the telecom and visible bands.

Milliwatt-threshold visible-telecom optical parametric oscillation using silicon nanophotonics

The on-chip creation of coherent light at visible wavelengths is crucial to field-level deployment of spectroscopy and metrology systems. Although on-chip lasers have been implemented in specific cases, a general solution that is not restricted by limitations of specific gain media has not been reported. Here, we propose creating visible light from an infrared pump by widely-separated optical parametric oscillation (OPO) using silicon nanophotonics. The OPO creates signal and idler light in the 700 nm and 1300 nm bands, respectively, with a 900 nm pump. It operates at a threshold power of (0.9 ± 0.1) mW, over 50× smaller than other widely-separated microcavity OPO works, which have only been reported in the infrared. This low threshold enables direct pumping without need of an intermediate optical amplifier. We further show how the device design can be modified to generate 780 nm and 1500 nm light with a similar power efficiency. Our nanophotonic OPO shows distinct advantages in power efficiency, operation stability, and device scalability, and is a major advance towards flexible on-chip generation of coherent visible light.