1
|
Španková M, Chromik Š, Dobročka E, Pribusová Slušná L, Talacko M, Gregor M, Pécz B, Koos A, Greco G, Panasci SE, Fiorenza P, Roccaforte F, Cordier Y, Frayssinet E, Giannazzo F. Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2837. [PMID: 37947682 PMCID: PMC10647872 DOI: 10.3390/nano13212837] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 10/19/2023] [Accepted: 10/24/2023] [Indexed: 11/12/2023]
Abstract
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm-2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics.
Collapse
Affiliation(s)
- Marianna Španková
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Štefan Chromik
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Edmund Dobročka
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Lenka Pribusová Slušná
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Marcel Talacko
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Maroš Gregor
- Faculty of Mathematics, Physics and Informatics, Comenius University Bratislava, 84248 Bratislava, Slovakia;
| | - Béla Pécz
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (B.P.); (A.K.)
| | - Antal Koos
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (B.P.); (A.K.)
| | - Giuseppe Greco
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Salvatore Ethan Panasci
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Patrick Fiorenza
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Fabrizio Roccaforte
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Yvon Cordier
- CNRS, CRHEA, Université Côte d’Azur, 06560 Valbonne, France; (Y.C.); (E.F.)
| | - Eric Frayssinet
- CNRS, CRHEA, Université Côte d’Azur, 06560 Valbonne, France; (Y.C.); (E.F.)
| | - Filippo Giannazzo
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| |
Collapse
|
2
|
Dagher R, Lymperakis L, Delaye V, Largeau L, Michon A, Brault J, Vennéguès P. Al 5+αSi 5+δN 12, a new Nitride compound. Sci Rep 2019; 9:15907. [PMID: 31685888 PMCID: PMC6828660 DOI: 10.1038/s41598-019-52363-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2019] [Accepted: 10/08/2019] [Indexed: 11/22/2022] Open
Abstract
The family of III-Nitride semiconductors has been under intensive research for almost 30 years and has revolutionized lighting applications at the dawn of the 21st century. However, besides the developments and applications achieved, nitride alloys continue to fuel the quest for novel materials and applications. We report on the synthesis of a new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350 °C and 1550 °C. The structure and stoichiometry of this compound are investigated by high resolution transmission electron microscopy (TEM) techniques and energy dispersive X-Ray (EDX) spectroscopy. Results are supported by density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where the anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>: The first one exhibits a ×3 periodicity along <11–20> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by an equal number of Si and Al atoms. Assuming a semiconducting alloy, a range of stoichiometries is proposed, Al5+αSi5+δN12 with α being between −2/3 and 1/4 and δ between 0 and 3/4.
Collapse
Affiliation(s)
- R Dagher
- Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560, Valbonne, France.,Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054, Grenoble, France
| | - L Lymperakis
- Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany
| | - V Delaye
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054, Grenoble, France
| | - L Largeau
- C2N-CNRS/Université Paris-Sud - Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120, Palaiseau, France
| | - A Michon
- Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560, Valbonne, France
| | - J Brault
- Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560, Valbonne, France
| | - P Vennéguès
- Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560, Valbonne, France.
| |
Collapse
|
3
|
Oliver RA. Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire. Ultramicroscopy 2010; 111:73-8. [PMID: 21115277 DOI: 10.1016/j.ultramic.2010.10.008] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2010] [Revised: 10/08/2010] [Accepted: 10/13/2010] [Indexed: 11/29/2022]
Abstract
To provide a route to the assessment of the impact of inclined facets on unintentional n-type doping during the growth of c-plane GaN on sapphire, thin (100 nm), highly Si-doped (at 10¹⁹ cm⁻³) marker layers have been incorporated into a GaN epitaxial layer grown by a method involving a transition from initial three-dimensional island growth to later, two-dimensional, planar growth. Imaging of the completed epitaxial layer in cross-section by scanning capacitance microscopy reveals the shapes of the islands, which were present during the early stages of growth and the relationship between the facets present and the incorporation of unintentional dopants. The results show that unintentional dopants are mostly incorporated on facets inclined to the [0001] direction, and suggest that gaseous impurities present in the MOVPE reactor are one source of dopant species.
Collapse
Affiliation(s)
- R A Oliver
- Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
| |
Collapse
|
4
|
Koester R, Hwang JS, Durand C, Dang DLS, Eymery J. Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy. NANOTECHNOLOGY 2010; 21:015602. [PMID: 19946171 DOI: 10.1088/0957-4484/21/1/015602] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed. This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diameters and a large length/diameter ratio (>100) on c-plane sapphire substrate. Detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth. In particular, the duration of the SiN(x) deposition prior to the wire growth is critical for controlling the epitaxy with the substrate. The GaN seed nucleation time determines the mean size diameter and structural quality, and a high Si-dopant concentration promotes vertical growth. Such GaN wires exhibit UV-light emission centred at approximately 350 nm and a weak yellow band (approximately 550 nm) at low temperature.
Collapse
Affiliation(s)
- R Koester
- Equipe mixte CEA-CNRS Nanophysique et semiconducteurs, CEA, INAC, SP2M, NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
| | | | | | | | | |
Collapse
|
5
|
Miasojedovas S, Butkus M, Jursenas S, Lucznik B, Grzegory I, Suski T. Carrier recombination under one-photon and two-photon excitation in GaN epilayers. Micron 2008; 40:118-21. [PMID: 18316196 DOI: 10.1016/j.micron.2008.01.011] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2007] [Revised: 01/25/2008] [Accepted: 01/27/2008] [Indexed: 11/15/2022]
Abstract
Luminescence properties of 100-mum thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type bulk GaN (HP-n-GaN), high-pressure bulk GaN doped with magnesium (HP-GaN:Mg), and free-standing HVPE lifted-off from sapphire (FS-HVPE-GaN), were compared by means of one-photon and two-photon excitations. The contribution of carrier capture to nonradiative traps was estimated by the analysis of luminescence transients with carrier diffusion taken into account. The estimated values of carrier lifetime of about 3ns and diffusion coefficient of 1cm(2)/s indicate the highest quality of GaN epilayers on FS-HVPE-GaN substrates.
Collapse
Affiliation(s)
- S Miasojedovas
- Institute of Material Science and Applied Research, Sauletekio 9, III building, Vilnius LT 10222, Lithuania.
| | | | | | | | | | | |
Collapse
|
6
|
Radnóczi GZ, Pécz B. Transmission electron microscope specimen preparation for exploring the buried interfaces in plan view. J Microsc 2006; 224:328-31. [PMID: 17210065 DOI: 10.1111/j.1365-2818.2006.01707.x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Abstract
A relatively easy and convenient process for the preparation of transmission electron microscope specimens of buried interfaces is described. The method is based on the alignment and realignment of the specimen rotation centre during ion milling. The ion-milling time interval in which good samples are obtained is substantially extended in this way.
Collapse
Affiliation(s)
- G Z Radnóczi
- Research Institute for Technical Physics and Materials Science (MFA) of the Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49, Hungary.
| | | |
Collapse
|