Semiconductor spintronics

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor

Electrical generation and transduction of polarized electron spins in semiconductors (SCs) are of central interest in spintronics and quantum information science. While spin generation in SCs is frequently realized via electrical injection from a ferromagnet (FM), there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), the efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer (SAM) of chiral molecules (α-helix l-polyalanine, AHPA-L), is demonstrated. The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional SC. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free SC spintronics.

The energy landscape of magnetic materials

Magnetic materials can display many solutions to the electronic-structure problem, corresponding to different local or global minima of the energy functional. In Hartree-Fock or density-functional theory different single-determinant solutions lead to different magnetizations, ionic oxidation states, hybridizations, and inter-site magnetic couplings. The vast majority of these states can be fingerprinted through their projection on the atomic orbitals of the magnetic ions. We have devised an approach that provides an effective control over these occupation matrices, allowing us to systematically explore the landscape of the potential energy surface. We showcase the emergence of a complex zoology of self-consistent states; even more so when semi-local density-functional theory is augmented - and typically made more accurate - by Hubbard corrections. Such extensive explorations allow to robustly identify the ground state of magnetic systems, and to assess the accuracy (or not) of current functionals and approximations.

Dyakonov-Perel-like Orbital and Spin Relaxations in Centrosymmetric Systems

The Dyakonov-Perel (DP) mechanism of spin relaxation has long been considered irrelevant in centrosymmetric systems since it was developed originally for noncentrosymmetric ones. We investigate whether this conventional understanding extends to the realm of orbital relaxation, which has recently attracted significant attention. Surprisingly, we find that orbital relaxation in centrosymmetric systems exhibits the DP-like behavior in the weak scattering regime. Moreover, the DP-like orbital relaxation can make the spin relaxation in centrosymmetric systems DP-like through the spin-orbit coupling. We also find that the DP-like orbital and spin relaxations are anisotropic even in materials with high crystal symmetry (such as face-centered cubic structure) and may depend on the orbital and spin nature of electron wave functions.

Ferromagnetic resonance measurement with frequency modulation down to 2 K

Ferromagnetic resonance (FMR) spectroscopy is a powerful technique to study the precessional dynamics of magnetization in thin film heterostructures. It provides valuable information about the mechanisms of exchange bias, spin angular momentum transfer across interfaces, and excitation of magnons. A key desirable feature of FMR spectrometers is the capability to study magnetization dynamics over a wide phase space of temperature (T), frequency (f), and magnetic field (B). The design, fabrication, and testing of such a spectrometer, which uses frequency modulation techniques for improved detection of microwave absorption, reduces heat load in the cryostat and allows simultaneous measurements of inverse spin Hall effect (ISHE) induced dc voltages, is described in this paper. The apparatus is based on a 2-port transmitted microwave signal measurement using a grounded co-planar waveguide. The input radio frequency (RF) signal, frequency modulated at a tunable f-band, excites spin precession in the sample, and the attenuated RF signal is measured phase sensitively. The sample stage, inserted in the bore of a superconducting solenoid, allows magnetic field and temperature variability of 0 to ±5 T and 2-310 K, respectively. We demonstrate the working of this Cryo-FMR and ISHE spectrometer on thin films of Ni80Fe20 and Fe60Co20B20 over a wide T, B, and f phase space.

Editorial for the Special Issue on Magnetic and Spin Devices, Volume II

Although the miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs)-the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits-is continuing, numerous outstanding technological challenges in complimentary metal-oxide-semiconductor (CMOS) device miniaturization are slowly bringing the downscaling to saturation [...].

Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single Layer

To achieve a desirable magnitude of spin-orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin-orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current-induced effective magnetic field in a single layer of a ferromagnet with strong spin-orbit interactions, the so-called spin-orbit ferromagnet, can be utilized to induce SOT. In spin-orbit ferromagnet systems, electric field application has the potential for manipulating the spin-orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate-controlled SOT devices.

Exploring room temperature spin transport under band gap opening in bilayer graphene

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.

Observation of the Nonreciprocal Magnon Hanle Effect

The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigenexcitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and detected spin transport in an antiferromagnetic insulator demonstrates its high potential for devices and as a convenient probe for magnon eigenmodes and the underlying spin interactions in the antiferromagnet. Here, we observe a nonreciprocity in the Hanle signal measured in hematite using two spatially separated platinum electrodes as spin injector or detector. Interchanging their roles was found to alter the detected magnon spin signal. The recorded difference depends on the applied magnetic field and reverses sign when the signal passes its nominal maximum at the so-called compensation field. We explain these observations in terms of a spin transport direction-dependent pseudofield. The latter leads to a nonreciprocity, which is found to be controllable via the applied magnetic field. The observed nonreciprocal response in the readily available hematite films opens interesting opportunities for realizing exotic physics predicted so far only for antiferromagnets with special crystal structures.

Ultralong 100 ns spin relaxation time in graphite at room temperature

Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal (T₁) and transverse (T₂) relaxation times were postulated to be equal, mirroring standard metals, but T₁ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that T₁ is markedly different from T₂. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of 100 ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of ~ 70 μm, suggesting that thin films of graphite - or multilayer AB graphene stacks - can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations.

Spin and charge drift-diffusion in ultra-scaled MRAM cells

Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis approach successfully used in nanoscale metallic spin valves to MTJs by introducing proper boundary conditions for the spin currents at the tunnel barrier interfaces, and by employing a conductivity locally dependent on the angle between the magnetization vectors for the charge current. The experimentally measured voltage and angle dependencies of the torques acting on the free layer are thereby accurately reproduced. The switching behavior of ultra-scaled MRAM cells is in agreement with recent experiments on shape-anisotropy MTJs. Using our extended approach is absolutely essential to accurately capture the interplay of the Slonczewski and Zhang-Li torque contributions acting on a textured magnetization in composite free layers with the inclusion of several MgO barriers.

Theory of drift-enabled control in nonlocal magnon transport

Electrically injected and detected nonlocal magnon transport has emerged as a versatile method for transporting spin as well as probing the spin excitations in a magnetic insulator. We examine the role of drift currents in this phenomenon as a method for controlling the magnon propagation length. Formulating a phenomenological description, we identify the essential requirements for existence of magnon drift. Guided by this insight, we examine magnetic field gradient, asymmetric contribution to dispersion, and temperature gradient as three representative mechanisms underlying a finite magnon drift velocity, finding temperature gradient to be particularly effective.

Spin-orbit coupling in buckled monolayer nitrogene

Buckled monolayer nitrogene has been recently predicted to be stable above the room temperature. The low atomic number of nitrogen atom suggests, that spin–orbit coupling in nitrogene is weak, similar to graphene or silicene. We employ first principles calculations and perform a systematic study of the intrinsic and extrinsic spin–orbit coupling in this material. We calculate the spin mixing parameter \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$b^2$$\end{document}b2, reflecting the strength of the intrinsic spin–orbit coupling and find, that \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$b^2$$\end{document}b2 is relatively small, on the order of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$10^{-6}$$\end{document}10-6. It also displays a weak anisotropy, opposite for electrons and holes. To study extrinsic effects of spin–orbit coupling we apply a transverse electric field enabling spin–orbit fields \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Omega$$\end{document}Ω. We find, that \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Omega$$\end{document}Ω are on the order of a single \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mu$$\end{document}μeV in the valence band, and tens to a hundred of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mu$$\end{document}μeV in the conduction band, depending on the applied electric field. Similar to \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$b^2$$\end{document}b2, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Omega$$\end{document}Ω is also anisotropic, in particular for the conduction electrons.

Lateral-Type Spin-Photonics Devices: Development and Applications

Spin-photonic devices, represented by spin-polarized light emitting diodes and spin-polarized photodiodes, have great potential for practical use in circularly polarized light (CPL) applications. Focusing on the lateral-type spin-photonic devices that can exchange CPL through their side facets, this review describes their functions in practical CPL applications in terms of: (1) Compactness and integrability, (2) stand-alone (monolithic) nature, (3) room temperature operation, (4) emission with high circular polarization, (5) polarization controllability, and (6) CPL detection. Furthermore, it introduces proposed CPL applications in a wide variety of fields and describes the application of these devices in biological diagnosis using CPL scattering. Finally, it discusses the current state of spin-photonic devices and their applications and future prospects.

CrI3/Y2CH2 Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI3 Monolayer Ferromagnets

Two-dimensional (2D) CrI₃ monolayer ferromagnets are key to the development of future miniature spintronic devices and modulating them into a half-metal will greatly expand the application scenarios of CrI₃ in nanospintronics. Nevertheless, existing strategies to induce half-metallicity of a CrI₃ monolayer remain experimentally challenging and have unstable issues. In this work, the introduction of a 2D electride [Y₂C]²⁺·2e^- as an auxiliary layer is shown to be an effective way to achieve the generation of stable half-metallicity in the CrI₃ monolayer. When the fully hydrogenated Y₂CH₂ and ferromagnetic CrI₃ monolayer combine to form a heterostructure, surprisingly the appropriate amount of charge injection (0.72 e) turns CrI₃ into a half-metal. Hetero-interfacial half-metallicity in CrI₃ is an intrinsic one and does not require any chemical functionalization or external physical modification. Therefore, it is advantageous for practical applications of CrI₃ in miniature spintronic devices, such as magnetic tunnel junctions, spin valves or spin field-effect transistors. A new strategy of the stable CrI₃/Y₂CH₂ heterostructure was successfully developed to induce the half-metallicity of 2D CrI₃ ferromagnets, which is experimentally feasible and half-metallic stable enough. This work paves the way for the application of the CrI₃ monolayer in half-metallic-based spintronics.

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.

Observation of Antiferromagnetic Magnon Pseudospin Dynamics and the Hanle Effect

We report on experiments demonstrating coherent control of magnon spin transport and pseudospin dynamics in a thin film of the antiferromagnetic insulator hematite utilizing two Pt strips for all-electrical magnon injection and detection. The measured magnon spin signal at the detector reveals an oscillation of its polarity as a function of the externally applied magnetic field. We quantitatively explain our experiments in terms of diffusive magnon transport and a coherent precession of the magnon pseudospin caused by the easy-plane anisotropy and the Dzyaloshinskii-Moriya interaction. This experimental observation can be viewed as the magnonic analog of the electronic Hanle effect and the Datta-Das transistor, unlocking the high potential of antiferromagnetic magnonics toward the realization of rich electronics-inspired phenomena.

Kramers Degeneracy and Spin Inversion in a Lateral Quantum Dot

We show that the axial symmetry of the Bychkov–Rashba interaction can be exploited to produce electron spin-flip in a circular quantum dot, without lifting the time reversal symmetry. In order to elucidate this effect, we consider ballistic electron transmission through a two-dimensional circular billiard coupled to two one-dimensional electrodes. Using the tight-binding approximation, we derive the scattering matrix and the effective Hamiltonian for the considered system. Within this approach, we found the conditions for the optimal realization of this effect in the transport properties of the quantum dot. Numerical analysis of the system, extended to the case of two-dimensional electrodes, confirms our findings. The relatively strong quantization of the quantum dot can make this effect robust against the temperature effects.

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

Can a sample having zero net magnetization produce polarized spin current?

Antiferromagnetic materials can be the suitable functional elements for designing of future spin based electronic devices, circumventing the use of conventional ferromagnetic materials and spin-orbit coupled systems. In the present work first time we put forward the underlying physical mechanism, to the best of our knowledge, to generate polarized spin current through a magnetic material having zero net magnetization. Our proposal is substantiated by considering a 2D geometry which is composed of several concentric 1D rings where neighboring rings are mutually connected with each other. The misalignment of up and down spin bands, which is the primary requirement to have finite spin polarization, is described analytically and then several aspects of spin polarization are studied numerically. Finally, we discuss experimental realization of the proposed magnetic quantum system. Our analysis can be utilized to any other complicated magnetic geometries, and may open up a new platform for future spintronic applications.

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices.

Spin Selectivity in Photoinduced Charge-Transfer Mediated by Chiral Molecules

Optical control and readout of electron spin and spin currents in thin films and nanostructures have remained attractive yet challenging goals for emerging technologies designed for applications in information processing and storage. Recent advances in room-temperature spin polarization using nanometric chiral molecular assemblies suggest that chemically modified surfaces or interfaces can be used for optical spin conversion by exploiting photoinduced charge separation and injection from well-coupled organic chromophores or quantum dots. Using light to drive photoexcited charge-transfer processes mediated by molecules with central or helical chirality enables indirect measurements of spin polarization attributed to the chiral-induced spin selectivity effect and of the efficiency of spin-dependent electron transfer relative to competitive relaxation pathways. Herein, we highlight recent approaches used to detect and to analyze spin selectivity in photoinduced charge transfer including spin-transfer torque for local magnetization, nanoscale charge separation and polarization, and soft ferromagnetic substrate magnetization- and chirality-dependent photoluminescence. Building on these methods through systematic investigation of molecular and environmental parameters that influence spin filtering should elucidate means to manipulate electron spins and photoexcited states for room-temperature optoelectronic and photospintronic applications.

Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures

Graphene is an excellent material for long-distance spin transport but allows little spin manipulation. Transition-metal dichalcogenides imprint their strong spin-orbit coupling into graphene via the proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally the spin Hall effect in graphene induced by MoS₂ proximity and for varying temperatures up to room temperature. The fact that spin transport and the spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Additionally, for a single graphene/MoS₂ heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS₂. By a comparison of our results to theoretical calculations, the latter scenario is found to be the most plausible one. Our findings pave the way toward the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.

Chirality-Induced Electron Spin Polarization and Enantiospecific Response in Solid-State Cross-Polarization Nuclear Magnetic Resonance

NMR-based techniques are supposed to be incapable of distinguishing pure crystalline chemical enantiomers. However, through systematic studies of cross-polarization magic angle spinning (CP-MAS) NMR in a series of amino acids, we have found a rather unexpected behavior in the intensity pattern of optical isomers in hydrogen/nitrogen nuclear polarization transfer that would allow the use of CP NMR as a nondestructive enantioselective detection technique. In all molecules considered, the d isomer yields higher intensity than the l form, while the chemical shift for all nuclei involved remains unchanged. We attribute this striking result to the onset of electron spin polarization, accompanying bond charge polarization through a chiral center, a secondary mechanism for polarization transfer that is triggered only in the CP experimental setup. Electron spin polarization is due to the chiral-induced spin selectivity effect (CISS), which creates an enantioselective response, analogous to the one involved in molecular recognition and enantiospecific separation with achiral magnetic substrates. This polarization influences the molecular magnetic environment, modifying the longitudinal relaxation time T₁ of ¹H, and ultimately provoking the observed asymmetry in the enantiomeric response.

Observation of Spin-Valley-Coupling-Induced Large Spin-Lifetime Anisotropy in Bilayer Graphene

We report the first observation of a large spin-lifetime anisotropy in bilayer graphene (BLG) fully encapsulated between hexagonal boron nitride. We characterize the out-of-plane (τ_{⊥}) and in-plane (τ_{∥}) spin lifetimes by oblique Hanle spin precession. At 75 K and the charge neutrality point (CNP), we observe a strong anisotropy of τ_{⊥}/τ_{∥}=8±2. This value is comparable to graphene-transition-metal-dichalcogenide heterostructures, whereas our high-quality BLG provides with τ_{⊥} up to 9 ns, a spin lifetime more than 2 orders of magnitude larger. The anisotropy decreases to 3.5±1 at a carrier density of n=6×10^{11}  cm^{-2}. Temperature-dependent measurements show above 75 K a decrease of τ_{⊥}/τ_{∥} with increasing temperature, reaching the isotropic case close to room temperature. We explain our findings with electric-field-induced spin-valley coupling arising from the small intrinsic spin-orbit fields in BLG of 12  μeV at the CNP.

Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nanospintronic devices with quasi-one-dimensional semiconductor channels.

Spin Accumulation and Dynamics in Inversion-Symmetric van der Waals Crystals

Inversion-symmetric materials are forbidden to show an overall spin texture in their band structure in the presence of time-reversal symmetry. However, in van der Waals materials which lack inversion symmetry within a single layer, it has been proposed that a layer-dependent spin texture can arise leading to a coupled spin-layer degree of freedom. Here we use time-resolved Kerr rotation in inversion-symmetric WSe_{2} and MoSe_{2} bulk crystals to study this spin-layer polarization and unveil its dynamics. Our measurements show that the spin-layer relaxation time in WSe_{2} is limited by phonon scattering at high temperatures and that the interlayer hopping can be tuned by a small in-plane magnetic field at low temperatures, enhancing the relaxation rates. We find a significantly lower lifetime for MoSe_{2} which agrees with theoretical expectations of a spin-layer polarization stabilized by the larger spin-orbit coupling in WSe_{2}.

Spin Hall and Spin Swapping Torques in Diffusive Ferromagnets

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession, and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precession effects displays a complex spatial dependence that can be exploited to generate torques and nucleate or propagate domain walls in centrosymmetric geometries without the use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Protected Pseudohelical Edge States in Z_{2}-Trivial Proximitized Graphene

We investigate topological properties of models that describe graphene on realistic substrates which induce proximity spin-orbit coupling in graphene. A Z_{2} phase diagram is calculated for the parameter space of (generally different) intrinsic spin-orbit coupling on the two graphene sublattices, in the presence of Rashba coupling. The most fascinating case is that of staggered intrinsic spin-orbit coupling which, despite being topologically trivial, Z_{2}=0, does exhibit edge states protected by time-reversal symmetry for zigzag ribbons as wide as micrometers. We call these states pseudohelical as their helicity is locked to the sublattice. The spin character and robustness of the pseudohelical modes is best exhibited on a finite flake, which shows that the edge states have zero g factor, carry a pure spin current in the cross section of the flake, and exhibit spin-flip reflectionless tunneling at the armchair edges.

Theoretical Modeling of Singlet Fission

Singlet fission is a photophysical reaction in which a singlet excited electronic state splits into two spin-triplet states. Singlet fission was discovered more than 50 years ago, but the interest in this process has gained a lot of momentum in the past decade due to its potential as a way to boost solar cell efficiencies. This review presents and discusses the most recent advances with respect to the theoretical and computational studies on the singlet fission phenomenon. The work revisits important aspects regarding electronic states involved in the process, the evaluation of fission rates and interstate couplings, the study of the excited state dynamics in singlet fission, and the advances in the design and characterization of singlet fission compounds and materials such as molecular dimers, polymers, or extended structures. Finally, the review tries to pinpoint some aspects that need further improvement and proposes future lines of research for theoretical and computational chemists and physicists in order to further push the understanding and applicability of singlet fission.

Spin Proximity Effects in Graphene/Topological Insulator Heterostructures

Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. To engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is essential. However, to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known about the true nature of the spin texture of the interface states as well as their role on the measured properties. Here, we use ab initio simulations and tight-binding models to determine the precise spin texture of electronic states in graphene interfaced with a Bi₂Se₃ topological insulator. Our calculations predict the emergence of a giant spin lifetime anisotropy in the graphene layer, which should be a measurable hallmark of spin transport in Gr/TI heterostructures and suggest novel types of spin devices.

Spin transport in graphene/transition metal dichalcogenide heterostructures

This review summarizes the theoretical and experimental studies of spin transport in graphene interfaced with transition metal dichalcogenides, and assesses its potential for future spintronic applications.

Large Proximity-Induced Spin Lifetime Anisotropy in Transition-Metal Dichalcogenide/Graphene Heterostructures

Van der Waals heterostructures have become a paradigm for designing new materials and devices in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition-metal dichalcogenide (TMD) is an excellent complement to graphene (Gr) because the high quality of charge and spin transport in Gr is enriched with the large spin-orbit coupling of the TMD via the proximity effect. The controllable spin-valley coupling makes these heterostructures particularly attractive for spintronic and opto-valleytronic applications. In this work, we study spin precession in a monolayer MoSe₂/Gr heterostructure and observe an unconventional, dramatic modulation of the spin signal, showing 1 order of magnitude longer lifetime of out-of-plane spins compared to that of in-plane spins (τ_⊥ ≈ 40 ps and τ_∥ ≈ 3.5 ps). This demonstration of a large spin lifetime anisotropy in TMD/Gr heterostructures, is a direct evidence of induced spin-valley coupling in Gr and provides an accessible route for manipulation of spin dynamics in Gr, interfaced with TMDs.

Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects

We report on fundamental aspects of spin dynamics in heterostructures of graphene and transition metal dichalcogenides (TMDCs). By using realistic models derived from first principles we compute the spin lifetime anisotropy, defined as the ratio of lifetimes for spins pointing out of the graphene plane to those pointing in the plane. We find that the anisotropy can reach values of tens to hundreds, which is unprecedented for typical 2D systems with spin-orbit coupling and indicates a qualitatively new regime of spin relaxation. This behavior is mediated by spin-valley locking, which is strongly imprinted onto graphene by TMDCs. Our results indicate that this giant spin lifetime anisotropy can serve as an experimental signature of materials with strong spin-valley locking, including graphene-TMDC heterostructures and TMDCs themselves. Additionally, materials with giant spin lifetime anisotropy can provide an exciting platform for manipulating the valley and spin degrees of freedom, and for designing novel spintronic devices.

Proximity Effects in Bilayer Graphene on Monolayer WSe_{2}: Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor

Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe_{2} are investigated from first principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is 2 orders of magnitude-the spin-orbit splitting of the valence band at K is about 2 meV-more than for electrons. Effectively, holes experience spin valley locking due to the strong proximity of the lower graphene layer to WSe_{2}. However, applying an external transverse electric field of some 1  V/nm, countering the built-in field of the heterostructure, completely reverses this effect and allows, instead of holes, electrons to be spin valley locked with 2 meV spin-orbit splitting. Such a behavior constitutes a highly efficient field-effect spin-orbit valve, making bilayer graphene on WSe_{2} a potential platform for a field-effect spin transistor.

Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons

The two-dimensional character and reduced screening in monolayer transition-metal dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding energies orders of magnitude larger than in bulk semiconductors. Focusing on neutral excitons, bound electron-hole pairs that dominate the optical response in TMDs, it is shown that they can provide fingerprints for magnetic proximity effects in magnetic heterostructures. These proximity effects cannot be described by the widely used single-particle description but instead reveal the possibility of a conversion between optically inactive and active excitons by rotating the magnetization of the magnetic substrate. With recent breakthroughs in fabricating Mo- and W-based magnetic TMD heterostructures, this emergent optical response can be directly tested experimentally.

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba spin-orbit splitting on the PrGe [010] surface in the paramagnetic phase with Rashba coefficient α R  = 5 eVÅ. We find that α R can be tuned in this system as a function of temperature at different magnetic phases. Rashba type spin polarized surface states originates due to the strong hybridization between Pr 4f states with the conduction electrons. Significant changes observed in the spin polarized surface states across the magnetic transitions are due to the competition between Dzyaloshinsky-Moriya interaction and exchange interaction present in this system. Presence of Dzyaloshinsky-Moriya interaction on the topological surface give rise to Saddle point singularity which leads to electron-like and hole-like Rashba spin split bands in the [Formula: see text] and [Formula: see text] directions, respectively. Supporting evidences of Dzyaloshinsky-Moriya interaction have been obtained as anisotropic magnetoresistance with respect to field direction and first-order type hysteresis in the X-ray diffraction measurements. A giant negative magnetoresistance of 43% in the antiferromagnetic phase and tunable Rashba parameter with temperature makes this material a suitable candidate for application in the antiferromagnetic spintronic devices.

Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields

Two-dimensional materials provide a unique platform to explore the full potential of magnetic proximity-driven phenomena, which can be further used for applications in next-generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene-ferromagnetic-insulator (FMI) heterostructures. Here, we present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to FMI magnetization. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. Additionally, we discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the nonlocal spin signals in graphene, which is due to spin relaxation by thermally induced transverse fluctuations of the FMI magnetization.

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. We create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI₃ and a monolayer of WSe₂. We observe unprecedented control of the spin and valley pseudospin in WSe₂, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe₂ valley splitting and polarization via flipping of the CrI₃ magnetization. The WSe₂ photoluminescence intensity strongly depends on the relative alignment between photoexcited spins in WSe₂ and the CrI₃ magnetization, because of ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

Electrical spin injection and detection in high mobility 2DEG systems

In this review paper we present the current status of research related to the topic of electrical spin injection and detection in two-dimensional electron gas (2DEG) systems, formed typically at the interface between two III-V semiconductor compounds. We discuss both theoretical aspects of spin injection in case of ballistic transport as well as give an overview of available reports on spin injection experiments performed on 2DEG structures. In the experimental part we focus particularly on our recent work on all-semiconductor structures with a 2DEG confined at an inverted GaAs/(Al,Ga)As interface and with a ferromagnetic semiconductor (Ga,Mn)As employed as a source of spin-polarized electrons.

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

Anisotropic Polar Magneto-Optic Kerr Effect of Ultrathin Fe/GaAs(001) Layers due to Interfacial Spin-Orbit Interaction

We report the observation of the anisotropic polar magneto-optical Kerr effect in thin layers of epitaxial Fe/GaAs(001) at room temperature. A clear twofold symmetry of the Kerr rotation angle depending on the orientation of the linear polarization of the probing laser beam with respect to the crystallographic directions of the sample is detected for ultrathin magnetic films saturated out of the film plane. The amplitude of the anisotropy decreases with increasing Fe film thickness, suggesting that the interfacial region is the origin of the anisotropy. The twofold symmetry is fully reproduced by model calculations based on an interference of interfacial Bychkov-Rashba and Dresselhaus spin-orbit coupling.

Wireless Majorana Bound States: From Magnetic Tunability to Braiding

We propose a versatile platform to investigate the existence of Majorana bound states (MBSs) and their non-Abelian statistics through braiding. This implementation combines a two-dimensional electron gas formed in a semiconductor quantum well grown on the surface of an s-wave superconductor with a nearby array of magnetic tunnel junctions (MTJs). The underlying magnetic textures produced by MTJs provide highly controllable topological phase transitions to confine and transport MBSs in two dimensions, overcoming the requirement for a network of wires. Obtained scaling relations confirm that various semiconductor quantum well materials are suitable for this proposal.

Enhanced spin-orbit coupling in core/shell nanowires

The spin–orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behaviour is counterintuitive compared with bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin–orbitronic concepts in semiconductor-based structures.

Spin-orbit coupling underlies many important spintronic concepts, and is strongly influenced by crystal symmetry. Here, the authors demonstrate a strong enhancement of spin-orbit coupling in core/shell semiconductor nanowires induced by the large interfacial surface areas

Observation of the D'yakonov-Perel' Spin Relaxation in Single-Crystalline Pt Thin Films

The spin relaxation mechanism in single-crystalline and polycrystalline platinum (Pt) thin films is revealed by a quantum interference effect. Examining the relationship between the spin relaxation rate and momentum scattering rate by changing Pt thickness, we find that the spin relaxation rate of Pt strongly depends on both crystal structure and thickness even though the quality of material (Pt) is unchanged. In particular, the D'yakonov-Perel' mechanism is considered as a dominant mechanism under cases where scattering events are suppressed or the interface effect is not negligible.

Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 μm in single layer graphene nonlocal spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO2 substrate and the subsequent dry transfer of a graphene-hBN-stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. Interestingly, long spin lifetimes are observed despite the fact that both conductive scanning force microscopy and contact resistance measurements reveal the existence of conducting pinholes throughout the MgO spin injection/detection barriers. Compared to previous devices, we observe an enhancement of the spin lifetime in single layer graphene by a factor of 6. We demonstrate that the spin lifetime does not depend on the contact resistance area products when comparing all bottom-up devices indicating that spin absorption at the contacts is not the predominant source for spin dephasing.

Determination of the spin-lifetime anisotropy in graphene using oblique spin precession

We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotropy of graphene on silicon oxide is independent of carrier density and temperature down to 150 K, and much weaker than previously reported. Indeed, within the experimental uncertainty, the spin relaxation is isotropic. Altogether with the gate dependence of the spin lifetime, this indicates that the spin relaxation is driven by magnetic impurities or random spin-orbit or gauge fields.

Magnetic coherent tunnel junctions with periodic grating barrier

A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons thus contain strong coherence, both in charge and especially in spin. The theory can answer the two basic problems present in MgO-based MTJs: (1) Why does the tunneling magnetoresistance (TMR) oscillate with the barrier thickness? (2) Why is the TMR still far away from infinity when the two electrodes are both half-metallic? Other principal features of TMR can also be explained and reproduced by the present work. It also provides possible ways to modulate the oscillation of TMR, and to enhance TMR so that it can tend to infinity. Within the theory, the barrier, as a periodic diffraction grating, can get rid of the confinement in width, it can vary from nanoscale to microscale. Based on those results, a future-generation MTJ is proposed where the three pieces can be fabricated separately and then assembled together, it is especially appropriate for the layered materials, e.g., MoS₂ and graphite, and most feasible for industries.