Structural and Optical Properties of Silicon Nanowire Arrays Fabricated by Metal Assisted Chemical Etching With Ammonium Fluoride

Implantable pH Sensing System Using Vertically Stacked Silicon Nanowire Arrays and Body Channel Communication for Gastroesophageal Reflux Monitoring

Silicon nanowires (SiNWs) are emerging as versatile components in the fabrication of sensors for implantable medical devices because of their exceptional electrical, optical, and mechanical properties. This paper presents a novel top-down fabrication method for vertically stacked SiNWs, eliminating the need for wet oxidation, wet etching, and nanolithography. The integration of these SiNWs into body channel communication (BCC) circuits was also explored. The fabricated SiNWs were confirmed to be capable of forming arrays with multiple layers and rows. The SiNW-based pH sensors demonstrated a robust response to pH changes, and when tested with BCC circuits, they showed that it was possible to quantize based on pH when transmitting data through the human body. This study successfully developed a novel method for SiNW fabrication and integration into BCC circuits, which could lead to improvements in the reliability and efficiency of implantable medical sensors. The findings demonstrate significant potential for bioelectronic applications and real-time biochemical monitoring.

Fabrication of Needle-Like Silicon Nanowires by Using a Nanoparticles-Assisted Bosch Process for Both High Hydrophobicity and Anti-Reflection

In this work, a modified Bosch etching process is developed to create silicon nanowires. Au nanoparticles (NPs) formed by magnetron sputtering film deposition and thermal annealing were employed as the hard mask to achieve controllable density and high aspect ratios. Such silicon nanowire exhibits the excellent anti-reflection ability of a reflectance value of below 2% within a broad light wave range between 220 and 1100 nm. In addition, Au NPs-induced surface plasmons significantly enhance the near-unity anti-reflection characteristics, achieving a reflectance below 3% within the wavelength range of 220 to 2600 nm. Furthermore, the nanowire array exhibits super-hydrophobic behavior with a contact angle over ~165.6° without enforcing any hydrophobic chemical treatment. Such behavior yields in water droplets bouncing off the surface many times. These properties render this silicon nanowire attractive for applications such as photothermal, photocatalysis, supercapacitor, and microfluidics.

Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders

Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted catalytic etching (MACE) can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances, and the properties of the etch product with special emphasis on the etching of silicon powders.

Mechanical, Structural and Optical Properties of the Silicon Nanowire Arrays

The present work discusses the systematic study of mechanical properties of the silicon nanostructures formed by metal assisted chemical etching (MACE). Silver electrolyte solution, along with hydrogen fluoride, was utilized in formation of silicon nanostructures. An optimized condition of etching time and silver electrolyte concentration were utilized to obtain high aspect ratio, defect-free and high density nanowire arrays on Si wafers. The as-prepared silicon nanostructures (SiNS) were investigated by Scanning electron microscopy (SEM) and nano indentation technique to bring out the morphological and mechanical properties. Further, the variation in optical properties of the bulk silicon and Si nanowire arrays were also investigated to determine the formation of nanostructures.