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Perinot A, Scuratti F, Scaccabarozzi AD, Tran K, Salazar-Rios JM, Loi MA, Salvatore G, Fabiano S, Caironi M. Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56095-56105. [PMID: 37990398 DOI: 10.1021/acsami.3c11285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.
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Affiliation(s)
- Andrea Perinot
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Francesca Scuratti
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Alberto D Scaccabarozzi
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Karolina Tran
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Jorge Mario Salazar-Rios
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Maria Antonietta Loi
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Giovanni Salvatore
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, Via Torino, 155─Alfa Building, 30172 Mestre Venice, Italy
| | - Simone Fabiano
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, 60 174 Norrköping, Sweden
| | - Mario Caironi
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
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Padurariu L, Horchidan N, Ciomaga CE, Curecheriu LP, Lukacs VA, Stirbu RS, Stoian G, Botea M, Florea M, Maraloiu VA, Pintilie L, Rotaru A, Mitoseriu L. Influence of Ferroelectric Filler Size and Clustering on the Electrical Properties of (Ag-BaTiO 3)-PVDF Sub-Percolative Hybrid Composites. ACS APPLIED MATERIALS & INTERFACES 2023; 15:5744-5759. [PMID: 36651701 DOI: 10.1021/acsami.2c15641] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The paper presents a study concerning the role of ferroelectric filler size and clustering in the dielectric properties of 20%BaTiO3-80%PVDF and of 20% (2%Ag-98%BaTiO3)-PVDF hybrid nanocomposites. By finite element calculations, it was shown that using fillers with ε > 103 does not provide a permittivity rise in the composites and the effective dielectric constant tends to saturate to specific values determined by the filler size and agglomeration degree. Irrespective of the ferroelectric filler sizes, the addition of metallic ultrafine nanoparticles (Ag) results in permittivity intensification and the effect is even stronger if the metallic nanoparticles are connected to a higher degree with the ferroelectric particles' surfaces. When using coarse ferroelectric fillers, the probability of clustering is higher, thus favoring the permittivity increase by field concentration in small regions close to the interfaces separating dissimilar materials. The modeling results were validated by an experimental dielectric analysis performed in a series of PVDF-based thick films with the same amount of BaTiO3 fillers or with Ag-BaTiO3 hybrid fillers. Similar trends as predicted by simulations were found experimentally but with slightly higher permittivity values which were assigned to the modifications of the polymer phase composition due to the presence of nanofillers and the local sample inhomogeneity (the presence of clustering, in particular for coarse BaTiO3 grains), which create regions with enhanced local fields.
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Affiliation(s)
- Leontin Padurariu
- Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
| | - Nadejda Horchidan
- Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
| | - Cristina Elena Ciomaga
- Department of Exact & Natural Sciences, Institute of Interdisciplinary Research, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
| | - Lavinia Petronela Curecheriu
- Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
| | - Vlad Alexandru Lukacs
- Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
| | - Radu Stefan Stirbu
- Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
| | - George Stoian
- National Institute of R&D for Technical Physics, 700050Iasi, Romania
| | - Mihaela Botea
- National Institute of Materials Physics, Atomistilor 405A, 077125Magurele, Romania
| | - Mihaela Florea
- National Institute of Materials Physics, Atomistilor 405A, 077125Magurele, Romania
| | | | - Lucian Pintilie
- National Institute of Materials Physics, Atomistilor 405A, 077125Magurele, Romania
| | - Aurelian Rotaru
- Faculty of Electrical Engineering and Computer Science & MANSiD Research Center, Stefan Cel Mare University, 720229Suceava, Romania
| | - Liliana Mitoseriu
- Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Al. I. Cuza University of Iasi, Bv. Carol I, No. 11, 700506Iasi, Romania
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