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Xu Z, Huang L, Jiang Y, Li Z, Chen C, He Z, Liu J, Fang Y, Wang K, Zhou G, Liu JM, Gao J. Thermal Annealing-Free SnO 2 for Fully Room-Temperature-Processed Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41037-41044. [PMID: 36044398 DOI: 10.1021/acsami.2c11488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The SnO2 electron transport layer (ETL) for perovskite solar cells (PSCs) has been recognized as one of the most reported protocols due to its processing convenience, high reproducibility, and excellence in device performance. To date, the thermal annealing (TA) process is still an essential step for a high-quality SnO2 ETL to reduce the surface trap density. This however could restrict its processing with high thermal energy input and set a barrier to the easiness of manufacturing such as processing under room-temperature conditions. Herein, we report a thermal annealing-free (TAF) SnO2 ETL by an alternative UV-ozone (UVO) treatment. This technique simultaneously endows the SnO2 ETL with a deeper valence band maximum (EVB) and lower defect density. Furthermore, with this SnO2 ETL, a power conversion efficiency (PCE) of 21.46 and 22.26% was achieved based on MAPbI3 and Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 absorbers, respectively. Importantly, a fully room-temperature-processed (RTP) PSC based on the TAF-SnO2 ETL has been demonstrated with a PCE of 20.88% on a rigid substrate and 15.92% on a flexible substrate, which are the highest values for RTP solar cells.
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Affiliation(s)
- Zhengjie Xu
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Lanqin Huang
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Yue Jiang
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhuoxi Li
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Cong Chen
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Pokfulam 999077, Hong Kong
| | - Zijun He
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jiayan Liu
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Yating Fang
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Kai Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
| | - Jinwei Gao
- Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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Kim HJ, Kim DW, Lee WY, Kim K, Lee SH, Bae JH, Kang IM, Kim K, Jang J. Flexible Sol-Gel-Processed Y 2O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process. MATERIALS 2022; 15:ma15051899. [PMID: 35269129 PMCID: PMC8912058 DOI: 10.3390/ma15051899] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Revised: 02/25/2022] [Accepted: 03/02/2022] [Indexed: 12/31/2022]
Abstract
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.
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Affiliation(s)
- Hyeon-Joong Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Do-Won Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Won-Yong Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Kyoungdu Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Sin-Hyung Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - Jin-Hyuk Bae
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - In-Man Kang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - Kwangeun Kim
- School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Korea;
| | - Jaewon Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
- Correspondence:
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Staszuk M, Pakuła D, Reimann Ł, Król M, Basiaga M, Mysłek D, Kříž A. Structure and Properties of ZnO Coatings Obtained by Atomic Layer Deposition (ALD) Method on a Cr-Ni-Mo Steel Substrate Type. MATERIALS 2020; 13:ma13194223. [PMID: 32977455 PMCID: PMC7578978 DOI: 10.3390/ma13194223] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2020] [Revised: 09/16/2020] [Accepted: 09/18/2020] [Indexed: 02/07/2023]
Abstract
This paper aimed to investigate the structure and physicochemical and tribological properties of ZnO coatings deposited by ALD on 316L stainless steel for biomedical applications. To obtain ZnO films, diethylzinc (DEZ) and water were used as ALD precursors. Zinc oxide layers were deposited at the same temperature of 200 °C using three types of ALD cycles: 500, 1000 and 1500. The structure and morphology of ZnO coatings were examined using SEM and AFM microscopes. The XRD and GIXRD methods were used for the phase analysis of the obtained coatings. To determine the resistance to pitting corrosion, potentiodynamic investigations and impedance spectroscopy were conducted in a Ringer solution at a temperature of 37 °C. The obtained results showed that the number of ALD cycles had a significant impact on the structure, morphology and corrosion resistance of the ZnO layers. It was found that after increasing the coating thickness of the ZnO on the material, its electrochemical properties determining the corrosion resistance also increased. Moreover, on the basis of the ball-on-plate tribological investigations, we found a significant reduction in the friction coefficient of the samples with the investigated coatings in relation to the noncoated substrates.
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Affiliation(s)
- Marcin Staszuk
- Department of Engineering and Biomedical Materials, Faculty of Mechanical Engineering, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland; (D.P.); (Ł.R.); (M.K.)
- Correspondence:
| | - Daniel Pakuła
- Department of Engineering and Biomedical Materials, Faculty of Mechanical Engineering, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland; (D.P.); (Ł.R.); (M.K.)
| | - Łukasz Reimann
- Department of Engineering and Biomedical Materials, Faculty of Mechanical Engineering, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland; (D.P.); (Ł.R.); (M.K.)
| | - Mariusz Król
- Department of Engineering and Biomedical Materials, Faculty of Mechanical Engineering, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland; (D.P.); (Ł.R.); (M.K.)
| | - Marcin Basiaga
- Department of Biomaterials and Medical Device Engineering, Faculty of Biomedical Engineering Silesian University of Technology, Gliwice, Roosevelta 40, 41-800 Zabrze, Poland;
| | - Dominika Mysłek
- Systemy Przetwarzania i Integracji Danych sp. z o.o., Jarosława Dąbrowskiego 9, 44-200 Rybnik, Poland;
| | - Antonín Kříž
- Department of Materials and Metallurgy Engineering, Faculty of Mechanical Engineering, University of West Bohemia, Univerzitni 22, 30614 Plzen, Czech Republic;
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Synthesis of antibacterial polyurethane film and its properties. POLISH JOURNAL OF CHEMICAL TECHNOLOGY 2020. [DOI: 10.2478/pjct-2020-0016] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
Abstract
Abstract
Polyurethane (PU) is a polymer widely used in the biomedical field with excellent mechanical properties and good biocompatibility. However, it usually exhibits poor antibacterial properties for practical applications. Efforts are needed to improve the antibacterial activities of PU films for broader application prospect and added application values. In the present work, two PU films, TDI-P(E-co-T) and TDI-N-100-P(E-co-T), were prepared. Silver nanoparticles (AgNPs) were composited into the TDI-N-100-P(E-co-T) film for better mechanical properties and antibacterial activities, and resultant PU/AgNPs composite film was systematically characterized and studied. The as-prepared PU/AgNPs composite film exhibits much better antibacterial properties than the traditional PU membrane, exhibiting broader application prospect.
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