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Colston G, Turner K, Renz A, Perera K, Gammon PM, Antoniou M, Shah VA. Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1587. [PMID: 38612100 PMCID: PMC11012246 DOI: 10.3390/ma17071587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 03/19/2024] [Accepted: 03/25/2024] [Indexed: 04/14/2024]
Abstract
We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect propagation through the epilayer. Stacking faults and other planar defects are channeled away from the center of the patterned structures, which are rounded through the use of H2 annealing at 1100 °C. Void formation between the columns of 3C-SiC growth acts as a termination point for defects, and coalescence of these columns into a continuous epilayer is promoted through the addition of HCl in the growth phase. The process of fabricating these compliant substrates utilizes standard processing techniques found within the semiconductor industry and is independent of the substrate orientation and offcut.
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Affiliation(s)
| | | | | | | | | | | | - Vishal A. Shah
- School of Engineering, The University of Warwick, Coventry CV4 7AL, UK; (G.C.); (K.T.); (A.R.); (K.P.); (P.M.G.); (M.A.)
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2
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Zhu Y, Yu VWZ, Galli G. First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide. NANO LETTERS 2023; 23:11453-11460. [PMID: 38051297 DOI: 10.1021/acs.nanolett.3c02880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The realization of quantum sensors using spin defects in semiconductors requires a thorough understanding of the physical properties of the defects in the proximity of surfaces. We report a study of the divacancy (VSiVC) in 3C-SiC, a promising material for quantum applications, as a function of surface reconstruction and termination with -H, -OH, -F and oxygen groups. We show that a VSiVC close to hydrogen-terminated (2 × 1) surfaces is a robust spin-defect with a triplet ground state and no surface states in the band gap and with small variations of many of its physical properties relative to the bulk, including the zero-phonon line and zero-field splitting. However, the Debye-Waller factor decreases in the vicinity of the surface and our calculations indicate it may be improved by strain-engineering. Overall our results show that the VSiVC close to SiC surfaces is a promising spin defect for quantum applications, similar to its bulk counterpart.
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Affiliation(s)
- Yizhi Zhu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Victor Wen-Zhe Yu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
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3
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Altana C, Calcagno L, Ciampi C, La Via F, Lanzalone G, Muoio A, Pasquali G, Pellegrino D, Puglia S, Rapisarda G, Tudisco S. Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors. SENSORS (BASEL, SWITZERLAND) 2023; 23:6522. [PMID: 37514817 PMCID: PMC10384444 DOI: 10.3390/s23146522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Revised: 05/27/2023] [Accepted: 07/11/2023] [Indexed: 07/30/2023]
Abstract
While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration. We have studied the general performances of several devices, as a function of fluence, irradiated in different experimental conditions with different beams. A standard p-n junction silicon detector was also irradiated for comparison. The new detectors manifest excellent performance in terms of stability of the main parameters, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc. Experimental results evidence a radiation resistance of SiC devices more than two order of magnitude higher than Si devices. The new construction technology applied to silicon carbide material has made it possible to create very robust devices with excellent performance. These devices will soon be available for all those scientific projects where a high resistance to radiation damage is required.
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Affiliation(s)
- Carmen Altana
- Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy
| | - Lucia Calcagno
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Catania, 95123 Catania, Italy
- Physics and Astronomy Department, Catania University, 95123 Catania, Italy
| | - Caterina Ciampi
- Physics and Astronomy Department, Florence University, 50019 Florence, Italy
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, 50019 Florence, Italy
| | - Francesco La Via
- Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), 95121 Catania, Italy
| | - Gaetano Lanzalone
- Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy
- Department of Engineering and Architecture, KORE University, Cittadella Universitaria, 94100 Enna, Italy
| | - Annamaria Muoio
- Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), 95121 Catania, Italy
| | - Gabriele Pasquali
- Physics and Astronomy Department, Florence University, 50019 Florence, Italy
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, 50019 Florence, Italy
| | | | - Sebastiana Puglia
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Catania, 95123 Catania, Italy
- Physics and Astronomy Department, Catania University, 95123 Catania, Italy
| | - Giuseppe Rapisarda
- Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy
- Physics and Astronomy Department, Catania University, 95123 Catania, Italy
| | - Salvatore Tudisco
- Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, Italy
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Siripraparat A, Mittanonsakul P, Pansa-Ngat P, Seriwattanachai C, Kumnorkaew P, Kaewprajak A, Kanjanaboos P, Pakawatpanurut P. All green sulfolane-based solvent enhanced electrical conductivity and rigidity of perovskite crystalline layer. Sci Rep 2023; 13:9335. [PMID: 37291155 PMCID: PMC10250537 DOI: 10.1038/s41598-023-36440-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Accepted: 06/03/2023] [Indexed: 06/10/2023] Open
Abstract
Industrial commercialization of perovskite solar cells not only depends on sufficient device performance, but also requires complete elimination of hazardous solvents in the fabrication process to enable sustainable development of the technology. This work reports a new solvent system based on sulfolane, [Formula: see text]-butyrolactone (GBL), and acetic acid (AcOH) as a significantly greener alternative to common but more hazardous solvents. Interestingly, this solvent system not only resulted in densely-packed perovskite layer of bigger crystal size and better crystallinity, the grain boundaries were found to be more rigid and highly conductive to electrical current. The physical changes at the grain boundaries were due to the sulfolane-infused crystal interfaces, which were expected to facilitate better charge transfer and provide stronger barrier to moisture within the perovskite layer, yielding higher current density and longer performance of the device as a result. In fact, by using a mixed solvent system consisting of sulfolane, GBL, and AcOH in the volume ratio of 70.0:27.5:2.5, the device stability was better and the photovoltaic performance was statistically comparable with those prepared using DMSO-based solvent. Our report reflects unprecedented findings of enhanced electrical conductivity and rigidity of the perovskite layer simply by using an appropriate choice of the all-green solvent.
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Affiliation(s)
- Akarapitch Siripraparat
- Department of Chemistry, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
- Center of Excellence for Innovation in Chemistry (PERCH-CIC), Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
| | - Pimolrat Mittanonsakul
- Department of Chemistry, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
| | - Pimsuda Pansa-Ngat
- School of Materials Science and Innovation, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
| | - Chaowaphat Seriwattanachai
- School of Materials Science and Innovation, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
| | - Pisist Kumnorkaew
- National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency, Thailand Science Park, Khlong Luang District, Pathum Thani, 12120, Thailand
| | - Anusit Kaewprajak
- National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency, Thailand Science Park, Khlong Luang District, Pathum Thani, 12120, Thailand
| | - Pongsakorn Kanjanaboos
- Center of Excellence for Innovation in Chemistry (PERCH-CIC), Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
- School of Materials Science and Innovation, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand
| | - Pasit Pakawatpanurut
- Department of Chemistry, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand.
- Center of Excellence for Innovation in Chemistry (PERCH-CIC), Faculty of Science, Mahidol University, Bangkok, 10400, Thailand.
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5
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La Via F, Alquier D, Giannazzo F, Kimoto T, Neudeck P, Ou H, Roncaglia A, Saddow SE, Tudisco S. Emerging SiC Applications beyond Power Electronic Devices. MICROMACHINES 2023; 14:1200. [PMID: 37374785 DOI: 10.3390/mi14061200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 05/29/2023] [Accepted: 05/30/2023] [Indexed: 06/29/2023]
Abstract
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.
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Affiliation(s)
| | - Daniel Alquier
- GREMAN, UMR 7347, Université de Tours, CNRS, 37071 Tours, France
| | | | - Tsunenobu Kimoto
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan
| | - Philip Neudeck
- NASA Glenn Research Center, 21000 Brookpark Rd., Cleveland, OH 44135, USA
| | - Haiyan Ou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, DK-2800 Kgs. Lyngby, Denmark
| | | | - Stephen E Saddow
- Electrical Engineering Department, University of South Florida, 4202 E. Fowler Avenue, ENG 030, Tampa, FL 33620, USA
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6
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Scuderi V, Zielinski M, La Via F. Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103824. [PMID: 37241451 DOI: 10.3390/ma16103824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Revised: 05/12/2023] [Accepted: 05/17/2023] [Indexed: 05/28/2023]
Abstract
In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall chemical vapor deposition (CVD) reactor. To quantify the influence of doping on the stress distribution, samples were non-intentionally doped (NID, dopant incorporation below 1016 cm-3), strongly n-type doped ([N] > 1019 cm-3), or strongly p-type doped ([Al] > 1019 cm-3). Sample NID was also grown on Si (111). In silicon (100), we observed that the stress at the interface is always compressive. In 3C-SiC, instead, we observed that the stress at the interface is always tensile and remains so in the first 4 µm. In the remaining 6 µm, the type of stress varies according to the doping. In particular, for 10 μm thick samples, the presence of an n-doped layer at the interface maximizes the stress in the silicon (~700 MPa) and in the 3C-SiC film (~250 MPa). In the presence of films grown on Si(111), 3C-SiC shows a compressive stress at the interface and then immediately becomes tensile following an oscillating trend with an average value of 412 MPa.
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Affiliation(s)
- Viviana Scuderi
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Ottava Strada n.5, 95121 Catania, Italy
| | | | - Francesco La Via
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Ottava Strada n.5, 95121 Catania, Italy
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7
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Ou H, Shi X, Lu Y, Kollmuss M, Steiner J, Tabouret V, Syväjärvi M, Wellmann P, Chaussende D. Novel Photonic Applications of Silicon Carbide. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1014. [PMID: 36770020 PMCID: PMC9919445 DOI: 10.3390/ma16031014] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 01/05/2023] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.
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Affiliation(s)
- Haiyan Ou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Xiaodong Shi
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Yaoqin Lu
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Manuel Kollmuss
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Johannes Steiner
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Vincent Tabouret
- Université Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France
| | | | - Peter Wellmann
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Didier Chaussende
- Université Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France
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8
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Cheng Z, Liang J, Kawamura K, Zhou H, Asamura H, Uratani H, Tiwari J, Graham S, Ohno Y, Nagai Y, Feng T, Shigekawa N, Cahill DG. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nat Commun 2022; 13:7201. [PMID: 36418359 PMCID: PMC9684120 DOI: 10.1038/s41467-022-34943-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 11/14/2022] [Indexed: 11/27/2022] Open
Abstract
High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m-1K-1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.
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Affiliation(s)
- Zhe Cheng
- grid.35403.310000 0004 1936 9991Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
| | - Jianbo Liang
- Department of Physics and Electronics, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka, 558-8585 Japan
| | - Keisuke Kawamura
- grid.509474.bSIC Division, Air Water Inc., 2290-1 Takibe, Toyoshina Azumino, Nagano, 399-8204 Japan
| | - Hao Zhou
- grid.223827.e0000 0001 2193 0096Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112 USA
| | - Hidetoshi Asamura
- Specialty Materials Dept., Electronics Unit, Air Water Inc. 4007-3 Yamato, Azusagawa, Nagano 390-1701 Japan
| | - Hiroki Uratani
- grid.509474.bSIC Division, Air Water Inc., 2290-1 Takibe, Toyoshina Azumino, Nagano, 399-8204 Japan
| | - Janak Tiwari
- grid.223827.e0000 0001 2193 0096Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112 USA
| | - Samuel Graham
- grid.213917.f0000 0001 2097 4943George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA
| | - Yutaka Ohno
- grid.69566.3a0000 0001 2248 6943Institute for Materials Research, Tohoku University, 2145-2 Narita, Oarai, Ibaraki 311-1313 Japan
| | - Yasuyoshi Nagai
- grid.69566.3a0000 0001 2248 6943Institute for Materials Research, Tohoku University, 2145-2 Narita, Oarai, Ibaraki 311-1313 Japan
| | - Tianli Feng
- grid.223827.e0000 0001 2193 0096Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112 USA
| | - Naoteru Shigekawa
- Department of Physics and Electronics, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka, 558-8585 Japan
| | - David G. Cahill
- grid.35403.310000 0004 1936 9991Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
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9
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Calabretta C, Scuderi V, Bongiorno C, Cannizzaro A, Anzalone R, Calcagno L, Mauceri M, Crippa D, Boninelli S, La Via F. Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC. CRYSTAL GROWTH & DESIGN 2022; 22:4996-5003. [PMID: 35942119 PMCID: PMC9354508 DOI: 10.1021/acs.cgd.2c00515] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etching, and high-resolution scanning transmission electron microscopy (HRSTEM) to investigate the effect of nitrogen doping on the distribution of stacking faults (SFs) and assess how increasing dosages of nitrogen during chemical vapor deposition (CVD) growth inhibits the development of SFs. An innovative angle-resolved SEM observation approach of molten KOH-etched samples resulted in detailed statistics on the density of the different types of defects as a function of the growth thickness of 3C-SiC free-standing samples with varied levels of nitrogen doping. Moreover, we proceeded to shed light on defects revealed by a diamond-shaped pit. In the past, they were conventionally associated with dislocations (Ds) due to what happens in 4H-SiC, where the formation of pits is always linked with the presence of Ds. In this work, the supposed Ds were observed at high magnification (by HRSTEM), demonstrating that principally they are partial dislocations (PDs) that delimit an SF, whose development and propagation are suppressed by the presence of nitrogen. These results were compared with VESTA simulations, which allowed to simulate the 3C-SiC lattice to design two 3C-lattice domains delimited by different types of SFs. In addition, through previous experimental evidence, a preferential impact of nitrogen on the closure of 6H-like SFs was observed as compared to 4H-like SFs.
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Affiliation(s)
| | | | | | | | - Ruggero Anzalone
- STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy
| | - Lucia Calcagno
- Dipartimento
di Fisica e Astronomia, Università
di Catania, Via S. Sofia
64, I-95123 Catania, Italy
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10
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Pertierra P, Salvadó MA, Franco R, Recio JM. Pressure and temperature stability boundaries of cubic SiC polymorphs: a first-principles investigation. Phys Chem Chem Phys 2022; 24:16228-16236. [PMID: 35758065 DOI: 10.1039/d2cp01266a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A better understanding of the effects of temperature and pressure on the wide gap SiC semiconductor is necessary for both (i) an improvement of the performance of this compound in a variety of technological applications and (ii) a clarification of controversial issues related to the stability of its cubic polymorphs at high pressure and high temperature. Bearing in mind this double demand, we perform first-principles calculations of the phonon band structures, vibrational density of states, and thermal and mode Grüneisen parameters of the zinc blende (B3) and rock-salt (B1) cubic polymorphs of 3C-SiC covering pressures and temperatures up to 120 GPa and 3000 K, respectively. Under a martensitic description of the B3-B1 transformation, we found that the large hysteresis pressure range observed at room temperature (35-100 GPa) disappears at around 1100 K. The calculated Clapeyron slope of this transformation is slightly negative, with average values of -2.9 MPa K-1 in the 0-3000 K interval and -3.7 MPa K-1 at 2000 K. We also study the decomposition reaction of the two cubic polymorphs into their elemental constituents (C and Si), finding a decreasing (increasing) decomposition temperature for the B3 (B1) phase as the pressure is applied. All these results are sustained by good agreement with other recently reported experimental and theoretical thermodynamic data that have also been evaluated under our quasi-harmonic approximation framework.
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Affiliation(s)
- Pilar Pertierra
- MALTA-Consolider Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo, Spain.
| | - Miguel A Salvadó
- MALTA-Consolider Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo, Spain.
| | - Ruth Franco
- MALTA-Consolider Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo, Spain.
| | - J Manuel Recio
- MALTA-Consolider Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo, Spain.
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