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Barettin D, Shtrom IV, Reznik RR, Cirlin GE. Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111737. [PMID: 37299640 DOI: 10.3390/nano13111737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 05/16/2023] [Accepted: 05/24/2023] [Indexed: 06/12/2023]
Abstract
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.
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Affiliation(s)
- Daniele Barettin
- Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy
| | - Igor V Shtrom
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
| | - Rodion R Reznik
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - George E Cirlin
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia
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2
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Demishkevich E, Zyubin A, Seteikin A, Samusev I, Park I, Hwangbo CK, Choi EH, Lee GJ. Synthesis Methods and Optical Sensing Applications of Plasmonic Metal Nanoparticles Made from Rhodium, Platinum, Gold, or Silver. MATERIALS (BASEL, SWITZERLAND) 2023; 16:3342. [PMID: 37176223 PMCID: PMC10180225 DOI: 10.3390/ma16093342] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/15/2023] [Accepted: 04/20/2023] [Indexed: 05/15/2023]
Abstract
The purpose of this paper is to provide an in-depth review of plasmonic metal nanoparticles made from rhodium, platinum, gold, or silver. We describe fundamental concepts, synthesis methods, and optical sensing applications of these nanoparticles. Plasmonic metal nanoparticles have received a lot of interest due to various applications, such as optical sensors, single-molecule detection, single-cell detection, pathogen detection, environmental contaminant monitoring, cancer diagnostics, biomedicine, and food and health safety monitoring. They provide a promising platform for highly sensitive detection of various analytes. Due to strongly localized optical fields in the hot-spot region near metal nanoparticles, they have the potential for plasmon-enhanced optical sensing applications, including metal-enhanced fluorescence (MEF), surface-enhanced Raman scattering (SERS), and biomedical imaging. We explain the plasmonic enhancement through electromagnetic theory and confirm it with finite-difference time-domain numerical simulations. Moreover, we examine how the localized surface plasmon resonance effects of gold and silver nanoparticles have been utilized for the detection and biosensing of various analytes. Specifically, we discuss the syntheses and applications of rhodium and platinum nanoparticles for the UV plasmonics such as UV-MEF and UV-SERS. Finally, we provide an overview of chemical, physical, and green methods for synthesizing these nanoparticles. We hope that this paper will promote further interest in the optical sensing applications of plasmonic metal nanoparticles in the UV and visible ranges.
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Affiliation(s)
- Elizaveta Demishkevich
- Research and Educational Center, Fundamental and Applied Photonics, Nanophotonics, Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia
| | - Andrey Zyubin
- Research and Educational Center, Fundamental and Applied Photonics, Nanophotonics, Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia
| | - Alexey Seteikin
- Research and Educational Center, Fundamental and Applied Photonics, Nanophotonics, Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia
- Department of Physics, Amur State University, 675021 Blagoveshchensk, Russia
| | - Ilia Samusev
- Research and Educational Center, Fundamental and Applied Photonics, Nanophotonics, Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia
| | - Inkyu Park
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| | - Chang Kwon Hwangbo
- Department of Physics, Inha University, Incheon 22212, Republic of Korea
| | - Eun Ha Choi
- Department of Electrical and Biological Physics, Kwangwoon University, Seoul 01897, Republic of Korea
- Plasma Bioscience Research Center, Kwangwoon University, Seoul 01897, Republic of Korea
| | - Geon Joon Lee
- Department of Electrical and Biological Physics, Kwangwoon University, Seoul 01897, Republic of Korea
- Plasma Bioscience Research Center, Kwangwoon University, Seoul 01897, Republic of Korea
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3
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Barettin D, Sakharov AV, Tsatsulnikov AF, Nikolaev AE, Pecchia A, Auf der Maur M, Karpov SY, Cherkashin N. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1367. [PMID: 37110952 PMCID: PMC10145816 DOI: 10.3390/nano13081367] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/07/2023] [Accepted: 04/12/2023] [Indexed: 06/19/2023]
Abstract
A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the device characteristics have not yet been examined in sufficient detail. Here, we present numerical simulations of a quantum-dot structure restored from an experimental high-resolution transmission electron microscopy image. A single InGaN island with the size of ten nanometers and nonuniform indium content distribution is analyzed. A number of two- and three-dimensional models of the quantum dot are derived from the experimental image by a special numerical algorithm, which enables electromechanical, continuum k→·p→, and empirical tight-binding calculations, including emission spectra prediction. Effectiveness of continuous and atomistic approaches are compared, and the impact of InGaN composition fluctuations on the ground-state electron and hole wave functions and quantum dot emission spectrum is analyzed in detail. Finally, comparison of the predicted spectrum with the experimental one is performed to assess the applicability of various simulation approaches.
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Affiliation(s)
- Daniele Barettin
- Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy
| | - Alexei V. Sakharov
- Ioffe Physico-Technical Institute RAS, 26 Polytekhnicheskaya str., 194021 St. Petersburg, Russia; (A.V.S.); (A.F.T.); (A.E.N.)
| | - Andrey F. Tsatsulnikov
- Ioffe Physico-Technical Institute RAS, 26 Polytekhnicheskaya str., 194021 St. Petersburg, Russia; (A.V.S.); (A.F.T.); (A.E.N.)
| | - Andrey E. Nikolaev
- Ioffe Physico-Technical Institute RAS, 26 Polytekhnicheskaya str., 194021 St. Petersburg, Russia; (A.V.S.); (A.F.T.); (A.E.N.)
| | | | - Matthias Auf der Maur
- Department of Electronic Engineering, University of Rome Tor Vergata, Via del Politecnico 1, 00133 Rome, Italy
| | - Sergey Yu. Karpov
- Soft-Impact, Ltd., P.O. Box 83, 27 Engels ave., 194156 St. Petersburg, Russia
| | - Nikolay Cherkashin
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, F-31055 Toulouse, CEDEX 4, France
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4
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Terrés-Haro JM, Monreal-Trigo J, Hernández-Montoto A, Ibáñez-Civera FJ, Masot-Peris R, Martínez-Máñez R. Finite Element Models of Gold Nanoparticles and Their Suspensions for Photothermal Effect Calculation. Bioengineering (Basel) 2023; 10:bioengineering10020232. [PMID: 36829726 PMCID: PMC9952663 DOI: 10.3390/bioengineering10020232] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Revised: 02/02/2023] [Accepted: 02/06/2023] [Indexed: 02/12/2023] Open
Abstract
(1) Background: The ability of metal nanoparticles to carry other molecules and their electromagnetic interactions can be used for localized drug release or to heat malignant tissue, as in the case of photothermal treatments. Plasmonics can be used to calculate their absorption and electric field enhancement, which can be further used to predict the outcome of photothermal experiments. In this study, we model the nanoparticle geometry in a Finite Element Model calculus environment to calculate the effects that occur as a response to placing it in an optical, electromagnetic field, and also a model of the experimental procedure to measure the temperature rise while irradiating a suspension of nanoparticles. (2) Methods: Finite Element Method numerical models using the COMSOL interface for geometry and mesh generation and iterative solving discretized Maxwell's equations; (3) Results: Absorption and scattering cross-section spectrums were obtained for NanoRods and NanoStars, also varying their geometry as a parameter, along with electric field enhancement in their surroundings; temperature curves were calculated and measured as an outcome of the irradiation of different concentration suspensions; (4) Conclusions: The results obtained are comparable with the bibliography and experimental measurements.
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Affiliation(s)
- José Manuel Terrés-Haro
- Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Departamento de Electrónica, Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Group of Electronic Development and Printed Sensors (ged+ps), Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, AN34 Space, 7E Building, 46022 Valencia, Spain
- Correspondence: (J.M.T.-H.); (R.M.-P.)
| | - Javier Monreal-Trigo
- Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Departamento de Electrónica, Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Group of Electronic Development and Printed Sensors (ged+ps), Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, AN34 Space, 7E Building, 46022 Valencia, Spain
- CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Instituto de Salud Carlos III, 28029 Madrid, Spain
| | - Andy Hernández-Montoto
- Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Instituto de Salud Carlos III, 28029 Madrid, Spain
- Unidad Mixta UPV-CIPF de Investigación en Mecanismos de Enfermedades y Nanomedicina, Universitat Politècnica de València, Centro de Investigación Príncipe Felipe, 46012 Valencia, Spain
- Unidad Mixta de Investigación en Nanomedicina y Sensores, Universitat Politècnica de València, IIS La Fe, 46026 Valencia, Spain
| | - Francisco Javier Ibáñez-Civera
- Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Departamento de Electrónica, Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Group of Electronic Development and Printed Sensors (ged+ps), Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, AN34 Space, 7E Building, 46022 Valencia, Spain
| | - Rafael Masot-Peris
- Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Departamento de Electrónica, Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- Group of Electronic Development and Printed Sensors (ged+ps), Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, AN34 Space, 7E Building, 46022 Valencia, Spain
- Correspondence: (J.M.T.-H.); (R.M.-P.)
| | - Ramón Martínez-Máñez
- Instituto Interuniversitario de Investigación de Reconocimiento Molecular y Desarrollo Tecnológico (IDM), Universitat Politècnica de València, Camino de Vera s/n, 46022 Valencia, Spain
- CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Instituto de Salud Carlos III, 28029 Madrid, Spain
- Unidad Mixta UPV-CIPF de Investigación en Mecanismos de Enfermedades y Nanomedicina, Universitat Politècnica de València, Centro de Investigación Príncipe Felipe, 46012 Valencia, Spain
- Unidad Mixta de Investigación en Nanomedicina y Sensores, Universitat Politècnica de València, IIS La Fe, 46026 Valencia, Spain
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Barettin D, Sakharov AV, Tsatsulnikov AF, Nikolaev AE, Cherkashin N. Electromechanically Coupled III-N Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:241. [PMID: 36677994 PMCID: PMC9865564 DOI: 10.3390/nano13020241] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2022] [Revised: 01/01/2023] [Accepted: 01/03/2023] [Indexed: 06/17/2023]
Abstract
We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical out-diffusion of In atoms during growth interruption is the basic mechanism for the formation of InGaN islands within as-deposited 2D layers. An anisotropic 3D strain field created in the first layer is sufficient to justify the vertical correlation of the islands formed in the upper layers spaced by a sufficiently thin GaN layer. When the thickness of a GaN spacer exceeds 1 nm, QDs from different layers under the same growth conditions emit independently and in the same wavelength range. When extremely thin (less than 1 nm), a GaN spacer is formed solely by applying short GI, and a double wavelength emission in the blue and green spectral ranges evidences the electromechanical coupling. With k→·p→ calculations including electromechanical fields, we model the optoelectronic properties of a structure with three InGaN lens-shaped QDs embedded in a GaN matrix, with three different configurations of In content. The profiles of the band structures are strongly dependent on the In content arrangement, and the quantum-confined Stark effect is significantly reduced in a structure with an increasing gradient of In content from the top to the bottom QD. This configuration exhibits carrier tunneling through the QDs, an increase of wave functions overlap, and evidence emerges of three distinct peaks in the spectral range.
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Affiliation(s)
- Daniele Barettin
- Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy
| | - Alexei V. Sakharov
- Ioffe Physico-Technical Institute RAS, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia
| | - Andrey F. Tsatsulnikov
- Ioffe Physico-Technical Institute RAS, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia
| | - Andrey E. Nikolaev
- Ioffe Physico-Technical Institute RAS, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia
| | - Nikolay Cherkashin
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, CEDEX 4, F-31055 Toulouse, France
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6
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Obraztsova AA, Barettin D, Furasova AD, Voroshilov PM, Auf der Maur M, Orsini A, Makarov SV. Light-Trapping Electrode for the Efficiency Enhancement of Bifacial Perovskite Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3210. [PMID: 36144998 PMCID: PMC9500818 DOI: 10.3390/nano12183210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/04/2022] [Revised: 09/02/2022] [Accepted: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Antireflection and light-trapping coatings are important parts of photovoltaic architectures, which enable the reduction of parasitic optical losses, and therefore increase the power conversion efficiency (PCE). Here, we propose a novel approach to enhance the efficiency of perovskite solar cells using a light-trapping electrode (LTE) with non-reciprocal optical transmission, consisting of a perforated metal film covered with a densely packed array of nanospheres. Our LTE combines charge collection and light trapping, and it can replace classical transparent conducting oxides (TCOs) such as ITO or FTO, providing better optical transmission and conductivity. One of the most promising applications of our original LTE is the optimization of efficient bifacial perovskite solar cells. We demonstrate that with our LTE, the short-circuit current density and fill factor are improved for both front and back illumination of the solar cells. Thus, we observe an 11% improvement in the light absorption for the monofacial PSCs, and a 15% for the bifacial PSCs. The best theoretical results of efficiency for our PSCs are 27.9% (monofacial) and 33.4% (bifacial). Our study opens new prospects for the further efficiency enhancement for perovskite solar cells.
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Affiliation(s)
- Anna A. Obraztsova
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Daniele Barettin
- Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy
| | | | - Pavel M. Voroshilov
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Matthias Auf der Maur
- Department of Electronic Engineering, University of Rome ‘Tor Vergata’, Via del Politecnico 1, 00133 Rome, Italy
| | - Andrea Orsini
- Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy
| | - Sergey V. Makarov
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
- Harbin Engineering University, Harbin 150001, China
- Qingdao Innovation and Development Center of Harbin Engineering University, Qingdao 266000, China
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Gil-Corrales JA, Vinasco JA, Mora-Ramos ME, Morales AL, Duque CA. Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1714. [PMID: 35630934 PMCID: PMC9146569 DOI: 10.3390/nano12101714] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Revised: 05/06/2022] [Accepted: 05/13/2022] [Indexed: 11/29/2022]
Abstract
Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect of donor density and external potentials in a self-consistent way. The calculation method uses the finite-element approach and the Landauer formalism. Quasi-stationary states, transmission probability, current density, cut-off frequency, and conductance are discussed considering variations in the donor density and the width of the central well. For all arrangements, the appearance of negative differential resistance (NDR) is evident, which is a fundamental characteristic of practical applications in devices. Finally, a comparison of the simulation with an experimental double-barrier system based on InGaAs with AlAs barriers reported in the literature has been obtained, evidencing the position and magnitude of the resonance peak in the current correctly.
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Affiliation(s)
- John A. Gil-Corrales
- Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 050022, Colombia; (J.A.G.-C.); (J.A.V.); (C.A.D.)
| | - Juan A. Vinasco
- Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 050022, Colombia; (J.A.G.-C.); (J.A.V.); (C.A.D.)
| | - Miguel E. Mora-Ramos
- Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Cuernavaca 62209, Morelos, Mexico;
| | - Alvaro L. Morales
- Grupo de Estado Sólido, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia Udea, Calle 70 No. 52-21, Medellín 050022, Colombia
| | - Carlos A. Duque
- Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 050022, Colombia; (J.A.G.-C.); (J.A.V.); (C.A.D.)
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8
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Zheng M, Fang G. Luminescence enhancement of lead halide perovskite light-emitting diodes with plasmonic metal nanostructures. NANOSCALE 2021; 13:16427-16447. [PMID: 34590647 DOI: 10.1039/d1nr05667k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Metal halide perovskites, as newly emerging light emitters, have been attracting considerable attention on luminescent materials and devices, due to their superior optoelectronic properties and potential practical applications. Recently, perovskite light-emitting diodes (PeLEDs) based on lead halide perovskites (LHPs) have been largely designed and intensively studied in laboratory platforms. However, to satisfy demand and promote their commercialization, it is crucial to improve the efficiency and stability of PeLEDs. Accordingly, the surface-plasmon (SP) effect provides a promising approach to enhance their luminescence, which is realized by incorporating plasmonic metal nanostructures (NSs) into PeLEDs. This review presents a comprehensive overview of the research status and prospect on LHP-based plasmonic PeLEDs together with the corresponding perovskite light-emission films (PeLEFs). Firstly, the recent development of the PeLEDs is briefly introduced. Secondly, the mechanisms and photophysics of the PeLEDs by SP manipulation are simply illustrated and analyzed. Then, the recent progress and achievements on the theoretical and experimental results of SP effect applications in the PeLEDs together with PeLEFs are presented in detail and systematically reviewed. Next, the current challenges and future directions of the PeLEDs are shown and discussed. Finally, a critical summary and outlook of the PeLEDs are summarized and proposed. Our results indicate that this new class of LHP-based plasmonic PeLEDs presents future research fields and demonstrates promising applications in lighting and displays, and further luminescence enhancement in exciton radiation processes and light extraction techniques are a hopeful route to obtain high-performance PeLEDs.
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Affiliation(s)
- Mingfei Zheng
- Key Laboratory of Artificial Micro- and Nano-structures of the Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China.
| | - Guojia Fang
- Key Laboratory of Artificial Micro- and Nano-structures of the Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China.
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