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Kwaśny M, Bombalska A. Optical Methods of Methane Detection. SENSORS (BASEL, SWITZERLAND) 2023; 23:2834. [PMID: 36905038 PMCID: PMC10007260 DOI: 10.3390/s23052834] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Revised: 03/02/2023] [Accepted: 03/02/2023] [Indexed: 06/18/2023]
Abstract
Methane is the most frequently analyzed gas with different concentrations ranging from single ppm or ppb to 100%. There are a wide range of applications for gas sensors including urban uses, industrial uses, rural measurements, and environment monitoring. The most important applications include the measurement of anthropogenic greenhouse gases in the atmosphere and methane leak detection. In this review, we discuss common optical methods used for detecting methane such as non-dispersive infrared (NIR) technology, direct tunable diode spectroscopy (TDLS), cavity ring-down spectroscopy (CRDS), cavity-enhanced absorption spectroscopy (CEAS), lidar techniques, and laser photoacoustic spectroscopy. We also present our own designs of laser methane analyzers for various applications (DIAL, TDLS, NIR).
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2
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Owen S, Yee LH, Maher DT. Low-Cost Nitric Oxide Sensors: Assessment of Temperature and Humidity Effects. SENSORS (BASEL, SWITZERLAND) 2022; 22:9013. [PMID: 36433609 PMCID: PMC9699606 DOI: 10.3390/s22229013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/01/2022] [Revised: 10/30/2022] [Accepted: 11/10/2022] [Indexed: 06/16/2023]
Abstract
High equipment cost is a significant entry barrier to research for small organizations in developing solutions to air pollution problems. Low-cost electrochemical sensors show sensitivity at parts-per-billion by volume mixing ratios but are subject to variation due to changing environmental conditions, in particular temperature. In this study, we demonstrate a low-cost Internet of Things (IoT)-based sensor system for nitric oxide analysis. The sensor system used a four-electrode electrochemical sensor exposed to a series of isothermal/isohume conditions. When deployed under these conditions, stable baseline responses were achieved, in contrast to ambient air conditions where temperature and humidity conditions may be variable. The interrelationship between working and auxiliary electrodes was linear within an environmental envelope of 20-40 °C and 30-80% relative humidity, with correlation coefficients from 0.9980 to 0.9999 when measured under isothermal/isohume conditions. These data enabled the determination of surface functions that describe the working to auxiliary electrode offsets and calibration curve gradients and intercepts. The linear and reproducible nature of individual calibration curves for stepwise nitric oxide (NO) additions under isothermal/isohume environments suggests the suitability of these sensors for applications aside from their role in air quality monitoring. Such applications would include nitric oxide kinetic studies for atmospheric applications or measurement of the potential biocatalytic activity of nitric oxide consuming enzymes in biocatalytic coatings, both of which currently employ high-capital-cost chemiluminescence detectors.
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Affiliation(s)
- Steven Owen
- Illawarra Coatings, 19 Technology Drive, Appin, NSW 2560, Australia
| | - Lachlan H. Yee
- Faculty of Science and Engineering, Southern Cross University, Military Road, Lismore, NSW 2480, Australia
| | - Damien T. Maher
- Faculty of Science and Engineering, Southern Cross University, Military Road, Lismore, NSW 2480, Australia
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3
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Xu J, Luo X, Hu S, Zhang X, Mei D, Liu F, Han N, Liu D, Gan X, Cheng Y, Huang W. Tunable Linearity of High-Performance Vertical Dual-Gate vdW Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008080. [PMID: 33694214 DOI: 10.1002/adma.202008080] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 02/02/2021] [Indexed: 06/12/2023]
Abstract
Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here, dual-channel conduction with ambipolar multilayer WSe2 is presented by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ≈2.5 × 104 A W-1 . Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ≈2 × 1013 Jones in the linear photoresponse regime. The linear photoresponse and high performance of the dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.
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Affiliation(s)
- Jinpeng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xiaoguang Luo
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Siqi Hu
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xi Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Dong Mei
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Dan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xuetao Gan
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Yingchun Cheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
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4
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Ornelas CD, Bowman A, Walmsley TS, Wang T, Andrews K, Zhou Z, Xu YQ. Ultrafast Photocurrent Response and High Detectivity in Two-Dimensional MoSe 2-based Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46476-46482. [PMID: 32867473 DOI: 10.1021/acsami.0c12155] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have garnered great attention on account of their novel properties and potential to advance modern technology. Recent studies have demonstrated that TMDCs can be utilized to create high-performing heterostructures with combined functionality of the individual layers and new phenomena at these interfaces. Here, we report an ultrafast photoresponse within MoSe2-based heterostructures in which heavily p-doped WSe2 and MoS2 flakes share an undoped MoSe2 channel, allowing us to directly compare the optoelectronic properties of MoSe2-based heterojunctions with different 2D materials. Strong photocurrent signals have been observed in both MoSe2-WSe2 and MoSe2-MoS2 heterojunctions with a photoresponse time constant of ∼16 μs, surmounting previous MoSe2-based devices by three orders of magnitude. Further studies have shown that the fast response is independent of the integrated 2D materials (WSe2 or MoS2) but is likely attributed to the high carrier mobility of 260 cm2 V-1 s-1 in the undoped MoSe2 channel as well as the greatly reduced Schottky barriers and near absence of interface states at MoSe2-WSe2/MoS2 heterojunctions, which lead to reduced carrier transit time and thus short photocurrent response time. Lastly, a high detectivity on the order of ∼1014 Jones has been achieved in MoSe2-based heterojunctions, which supersedes current industry standards. These fundamental studies not only shed light on photocurrent generation mechanisms in MoSe2-based heterojunctions but also open up new avenues for engineering future high-performance 2D optoelectronic devices.
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Affiliation(s)
- Christian D Ornelas
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States of America
| | - Arthur Bowman
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States of America
| | - Thayer S Walmsley
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States of America
| | - Tianjiao Wang
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Kraig Andrews
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States of America
| | - Zhixian Zhou
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States of America
| | - Ya-Qiong Xu
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States of America
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
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5
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Wang Z, Du Y, Ding Y, Peng Z. A Wide-Range and Calibration-Free Spectrometer Which Combines Wavelength Modulation and Direct Absorption Spectroscopy with Cavity Ringdown Spectroscopy. SENSORS (BASEL, SWITZERLAND) 2020; 20:E585. [PMID: 31973109 PMCID: PMC7037845 DOI: 10.3390/s20030585] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2019] [Revised: 01/15/2020] [Accepted: 01/16/2020] [Indexed: 06/10/2023]
Abstract
A wide-range, calibration-free tunable diode laser spectrometer is established by combining wavelength modulation and direct absorption spectroscopy (WM-DAS) with continuous wave cavity ringdown spectroscopy (CW-CRDS). This spectrometer combines the benefits of absolute concentration measurements, wide range, and high speed, using WM-DAS with enhanced noise reduction in CW-CRDS. The accurate baseline ringdown time, τ0, is calculated by the absorption peak (measured by WM-DAS) and the ringdown time containing gas absorption information (measured by CW-CRDS at the center wavelength of the spectral line). The gas concentration is obtained without measuring τ0 in real time, thus, greatly improving the measuring speed. A WM-DAS/CW-CRDS spectrometer at 1.57 μm for CO detection was assembled for experimental validation of the multiplexing scheme over a concentration ranging from 4 ppm to 1.09% (0.1 MPa, 298 K). The measured concentration of CO at 6374.406 cm-1 shows that the dynamic range of this tunable diode laser absorption spectrometer is extendable up to five orders of magnitude and the corresponding precision is improved. The measurement speed of this spectrometer can extend up to 10 ms, and the detection limit can reach 35 ppb within 25 s.
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Affiliation(s)
| | | | | | - Zhimin Peng
- State Key Laboratory of Power Systems, Department of Energy and Power Engineering, Tsinghua University, Beijing 100084, China; (Z.W.); (Y.D.); (Y.D.)
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6
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Fu Q, Zhu C, Zhao X, Wang X, Chaturvedi A, Zhu C, Wang X, Zeng Q, Zhou J, Liu F, Tay BK, Zhang H, Pennycook SJ, Liu Z. Ultrasensitive 2D Bi 2 O 2 Se Phototransistors on Silicon Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1804945. [PMID: 30417479 DOI: 10.1002/adma.201804945] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2018] [Revised: 09/28/2018] [Indexed: 05/07/2023]
Abstract
2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2 O2 Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2 O2 Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W-1 , a photoconductive gain of more than 104 , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.
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Affiliation(s)
- Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Xingli Wang
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore, 637553, Singapore
| | - Apoorva Chaturvedi
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xiaowei Wang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiadong Zhou
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fucai Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Beng Kang Tay
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore, 637553, Singapore
| | - Hua Zhang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore, 637553, Singapore
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Wang T, Andrews K, Bowman A, Hong T, Koehler M, Yan J, Mandrus D, Zhou Z, Xu YQ. High-Performance WSe 2 Phototransistors with 2D/2D Ohmic Contacts. NANO LETTERS 2018; 18:2766-2771. [PMID: 29614223 DOI: 10.1021/acs.nanolett.7b04205] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report high-performance WSe2 phototransistors with two-dimensional (2D) contacts formed between degenerately p-doped WSe2 and undoped WSe2 channel. A photoresponsivity of ∼600 mA/W with a high external quantum efficiency up to 100% and a fast response time (both rise and decay times) shorter than 8 μs have been achieved concurrently. More importantly, our WSe2 phototransistor exhibits a high specific detectivity (∼1013 Jones) in vacuum, comparable or higher than commercial Si- and InGaAs-based photodetectors. Further studies have shown that the high photoresponsivity and short response time of our WSe2 phototransistor are mainly attributed to the lack of Schottky-barriers between degenerately p-doped WSe2 source/drain contacts and undoped WSe2 channel, which can reduce the RC time constant and carrier transit time of a photodetector. Our experimental results provide an accessible strategy to achieve high-performance WSe2 phototransistor architectures by improving their electrical transport and photocurrent generation simultaneously, opening up new avenues for engineering future 2D optoelectronic devices.
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Affiliation(s)
- Tianjiao Wang
- Department of Electrical Engineering and Computer Science , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Kraig Andrews
- Department of Physics and Astronomy , Wayne State University , Detroit , Michigan 48201 , United States
| | - Arthur Bowman
- Department of Physics and Astronomy , Wayne State University , Detroit , Michigan 48201 , United States
| | - Tu Hong
- Department of Electrical Engineering and Computer Science , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Michael Koehler
- Department of Materials Science and Engineering , the University of Tennessee , Knoxville , Tennessee 37996 , United States
| | - Jiaqiang Yan
- Department of Materials Science and Engineering , the University of Tennessee , Knoxville , Tennessee 37996 , United States
- Materials Science and Technology Division , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - David Mandrus
- Department of Materials Science and Engineering , the University of Tennessee , Knoxville , Tennessee 37996 , United States
- Materials Science and Technology Division , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Zhixian Zhou
- Department of Physics and Astronomy , Wayne State University , Detroit , Michigan 48201 , United States
| | - Ya-Qiong Xu
- Department of Electrical Engineering and Computer Science , Vanderbilt University , Nashville , Tennessee 37235 , United States
- Department of Physics and Astronomy , Vanderbilt University , Nashville , Tennessee 37235 , United States
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Ishii A, Sakai T, Takahashi R, Ogata S, Kondo K, Kondo T, Iwasawa D, Mizushima S, Yoshihara K, Hasegawa M. Sensitive Photodetection with Photomultiplication Effect in an Interfacial Eu 2+/3+ Complex on a Mesoporous TiO 2 Film. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5706-5713. [PMID: 29355008 DOI: 10.1021/acsami.7b18200] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A simple device structure composed of an interfacial Eu2+/3+ complex on a mesoporous TiO2 film is developed by a solution process and acts as the high-performance photodetector with photomultiplication phenomena. The electron transfer from the photoexcited organic ligand, 2,2':6',2″-terpyridine (terpy), as a photosensitizer to TiO2 is accelerated by the reduction level of Eu3+/2+ ions chemically bonding among terpy and TiO2, resulting in the generation of a large photocurrent. It is worth noting that its external quantum efficiency is in excess of 105% under applied reverse bias. The corresponding responsivity of the device is also determined to be 464 A/W at an irradiation light intensity of 0.7 mW/cm2 (365 nm), which is more than 3 orders of magnitude larger than those of inorganic photodetectors. A dark current of the device can be reduced to 10-9 A/cm2 by introducing a Eu oxide thin-film layer as a carrier blocking layer at the interface between transparent conducting oxide (TCO) and the TiO2 layer, and the specific detectivity reaches 5.2 × 1015 jones at 365 nm with -3 V. The performance of our organic-inorganic hybrid photodetector surpasses those of existing ultraviolet photodetectors.
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Affiliation(s)
- Ayumi Ishii
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
- JST, PRESTO , 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Tatsuro Sakai
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Riku Takahashi
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Shuhei Ogata
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Kazuki Kondo
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Takahiro Kondo
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Daichi Iwasawa
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Soichi Mizushima
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Koushi Yoshihara
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
| | - Miki Hasegawa
- College of Science and Engineering, Aoyama Gakuin University , 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
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Nabiev SS, Palkina LA. Modern technologies for detection and identification of explosive agents and devices. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B 2017. [DOI: 10.1134/s1990793117050190] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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10
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Szabra D, Prokopiuk A, Mikołajczyk J, Ligor T, Buszewski B, Bielecki Z. Air sampling unit for breath analyzers. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2017; 88:115006. [PMID: 29195373 DOI: 10.1063/1.4995502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The paper presents a portable breath sampling unit (BSU) for human breath analyzers. The developed unit can be used to probe air from the upper airway and alveolar for clinical and science studies. The BSU is able to operate as a patient interface device for most types of breath analyzers. Its main task is to separate and to collect the selected phases of the exhaled air. To monitor the so-called I, II, or III phase and to identify the airflow from the upper and lower parts of the human respiratory system, the unit performs measurements of the exhaled CO2 (ECO2) in the concentration range of 0%-20% (0-150 mm Hg). It can work in both on-line and off-line modes according to American Thoracic Society/European Respiratory Society standards. A Tedlar bag with a volume of 5 dm3 is mounted as a BSU sample container. This volume allows us to collect ca. 1-25 selected breath phases. At the user panel, each step of the unit operation is visualized by LED indicators. This helps us to regulate the natural breathing cycle of the patient. There is also an operator's panel to ensure monitoring and configuration setup of the unit parameters. The operation of the breath sampling unit was preliminarily verified using the gas chromatography/mass spectrometry (GC/MS) laboratory setup. At this setup, volatile organic compounds were extracted by solid phase microextraction. The tests were performed by the comparison of GC/MS signals from both exhaled nitric oxide and isoprene analyses for three breath phases. The functionality of the unit was proven because there was an observed increase in the signal level in the case of the III phase (approximately 40%). The described work made it possible to construct a prototype of a very efficient breath sampling unit dedicated to breath sample analyzers.
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Affiliation(s)
- Dariusz Szabra
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
| | - Artur Prokopiuk
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
| | - Janusz Mikołajczyk
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
| | - Tomasz Ligor
- Environmental Chemistry and Bioanalytics, Faculty of Chemistry, Nicolaus Copernicus University, 7 Gagarin St., 87-100 Torun, Poland
| | - Bogusław Buszewski
- Environmental Chemistry and Bioanalytics, Faculty of Chemistry, Nicolaus Copernicus University, 7 Gagarin St., 87-100 Torun, Poland
| | - Zbigniew Bielecki
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
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11
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Pan S, Liu Q, Zhao J, Li G. Ultrahigh Detectivity and Wide Dynamic Range Ultraviolet Photodetectors Based on Bi xSn 1-xO 2 Intermediate Band Semiconductor. ACS APPLIED MATERIALS & INTERFACES 2017; 9:28737-28742. [PMID: 28753263 DOI: 10.1021/acsami.7b06058] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
The ultraviolet (UV) photodetectors have significant applications different fields. High detectivity, high responsivity and wide active area are required to probe a weak UV light in actual ambient. Unfortunately, most practical UV photoconductors based on wide bandgap semiconductor films can hardly have both a high responsivity and a low dark current density. In this study, the intermediate band engineering in semiconductor has been proposed try to solve this problem. The intermediate band UV photodetectors based on BixSn1-xO2 (0.017 < x < 0.041) films show a detectivity of 6.1 × 1015 Jones at 280 nm and a quantum efficiency of 2.9 × 104 %. The dynamic range is 195 dB, which is much higher than other UV photodetector. The recovery time is about 1 s after exposing device into ethanol steam. Our results demonstrate that the intermediate band semiconductor BixSn1-xO2 films can serve as a high performance UV photodetector.
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Affiliation(s)
- Shusheng Pan
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences , Hefei 230031, P.R. China
| | - Qianwen Liu
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences , Hefei 230031, P.R. China
| | - Junqian Zhao
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences , Hefei 230031, P.R. China
| | - Guanghai Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences , Hefei 230031, P.R. China
- School of Chemistry and Materials Science, University of Science and Technology of China , Hefei 230031, P.R. China
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Wojtas J, Gluszek A, Hudzikowski A, Tittel FK. Mid-Infrared Trace Gas Sensor Technology Based on Intracavity Quartz-Enhanced Photoacoustic Spectroscopy. SENSORS 2017; 17:s17030513. [PMID: 28273836 PMCID: PMC5375799 DOI: 10.3390/s17030513] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/27/2017] [Revised: 02/24/2017] [Accepted: 03/02/2017] [Indexed: 01/31/2023]
Abstract
The application of compact inexpensive trace gas sensor technology to a mid-infrared nitric oxide (NO) detectoion using intracavity quartz-enhanced photoacoustic spectroscopy (I-QEPAS) is reported. A minimum detection limit of 4.8 ppbv within a 30 ms integration time was demonstrated by using a room-temperature, continuous-wave, distributed-feedback quantum cascade laser (QCL) emitting at 5.263 µm (1900.08 cm-1) and a new compact design of a high-finesse bow-tie optical cavity with an integrated resonant quartz tuning fork (QTF). The optimum configuration of the bow-tie cavity was simulated using custom software. Measurements were performed with a wavelength modulation scheme (WM) using a 2f detection procedure.
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Affiliation(s)
- Jacek Wojtas
- Institute of Optoelectronics, Military University of Technology, 00-908 Warsaw, Poland.
| | - Aleksander Gluszek
- Electronics Faculty, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - Arkadiusz Hudzikowski
- Electronics Faculty, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - Frank K Tittel
- Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005-1892, USA.
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Han S, Cheng J, Fan H, Yu J, Li L. Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction. SENSORS 2016; 16:s16101763. [PMID: 27775653 PMCID: PMC5087547 DOI: 10.3390/s16101763] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2016] [Revised: 10/14/2016] [Accepted: 10/18/2016] [Indexed: 11/16/2022]
Abstract
High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.
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Affiliation(s)
- Shijiao Han
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
| | - Jiang Cheng
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.
| | - Huidong Fan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.
| | - Lu Li
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.
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Giannoukos S, Brkić B, Taylor S, Marshall A, Verbeck GF. Chemical Sniffing Instrumentation for Security Applications. Chem Rev 2016; 116:8146-72. [PMID: 27388215 DOI: 10.1021/acs.chemrev.6b00065] [Citation(s) in RCA: 122] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Border control for homeland security faces major challenges worldwide due to chemical threats from national and/or international terrorism as well as organized crime. A wide range of technologies and systems with threat detection and monitoring capabilities has emerged to identify the chemical footprint associated with these illegal activities. This review paper investigates artificial sniffing technologies used as chemical sensors for point-of-use chemical analysis, especially during border security applications. This article presents an overview of (a) the existing available technologies reported in the scientific literature for threat screening, (b) commercially available, portable (hand-held and stand-off) chemical detection systems, and (c) their underlying functional and operational principles. Emphasis is given to technologies that have been developed for in-field security operations, but laboratory developed techniques are also summarized as emerging technologies. The chemical analytes of interest in this review are (a) volatile organic compounds (VOCs) associated with security applications (e.g., illegal, hazardous, and terrorist events), (b) chemical "signatures" associated with human presence, and
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Affiliation(s)
- Stamatios Giannoukos
- Department of Electrical Engineering and Electronics, University of Liverpool , Liverpool, L69 3GJ, U.K
| | - Boris Brkić
- Department of Electrical Engineering and Electronics, University of Liverpool , Liverpool, L69 3GJ, U.K.,Q-Technologies Ltd., 100 Childwall Road, Liverpool, L15 6UX, U.K
| | - Stephen Taylor
- Department of Electrical Engineering and Electronics, University of Liverpool , Liverpool, L69 3GJ, U.K.,Q-Technologies Ltd., 100 Childwall Road, Liverpool, L15 6UX, U.K
| | - Alan Marshall
- Department of Electrical Engineering and Electronics, University of Liverpool , Liverpool, L69 3GJ, U.K
| | - Guido F Verbeck
- Department of Chemistry, University of North Texas , Denton, Texas 76201, United States
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Advances in explosives analysis--part II: photon and neutron methods. Anal Bioanal Chem 2015; 408:49-65. [PMID: 26446898 DOI: 10.1007/s00216-015-9043-1] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2015] [Accepted: 09/10/2015] [Indexed: 01/09/2023]
Abstract
The number and capability of explosives detection and analysis methods have increased dramatically since publication of the Analytical and Bioanalytical Chemistry special issue devoted to Explosives Analysis [Moore DS, Goodpaster JV, Anal Bioanal Chem 395:245-246, 2009]. Here we review and critically evaluate the latest (the past five years) important advances in explosives detection, with details of the improvements over previous methods, and suggest possible avenues towards further advances in, e.g., stand-off distance, detection limit, selectivity, and penetration through camouflage or packaging. The review consists of two parts. Part I discussed methods based on animals, chemicals (including colorimetry, molecularly imprinted polymers, electrochemistry, and immunochemistry), ions (both ion-mobility spectrometry and mass spectrometry), and mechanical devices. This part, Part II, will review methods based on photons, from very energetic photons including X-rays and gamma rays down to the terahertz range, and neutrons.
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