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Imam NG, Elyamny S, Aquilanti G, Pollastri S, Gigli L, Kashyout AEHB. Comprehensive study of nanostructured Bi 2Te 3 thermoelectric materials - insights from synchrotron radiation XRD, XAFS, and XRF techniques. RSC Adv 2024; 14:1875-1887. [PMID: 38192325 PMCID: PMC10772705 DOI: 10.1039/d3ra06731a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 12/21/2023] [Indexed: 01/10/2024] Open
Abstract
In this contribution, a comprehensive study of nanostructured Bi2Te3 (BT) thermoelectric material was performed using a combination of synchrotron radiation-based techniques such as XAFS, and XRF, along with some other laboratory techniques such as XRD, XPS, FESEM, and HRTEM. This study aims to track the change in morphological, compositional, average and local/electronic structures of Bi2Te3 of two different phases; nanostructure (thin film) and nanopowders (NPs). Bi2Te3 nanomaterial was fabricated as pellets using zone melting process in a one step process, while Bi2Te3 thin film was deposited on sodalime glass substrate using a vacuum thermal evaporation technique. Synchrotron radiation-based Bi LIII-edge fluorescence-mode X-ray absorption fine structure (XAFS) technique was performed to probe locally the electronic and fine structures of BT thin film around the Bi atom, while transmission-mode XAFS was used for BT NPs distributed in the PVP matrix. The structural features of the collected Bi LIII XANES spectra of thin film and powder samples of BT are compared with the simulated XANES spectrum of BT calculated using FDMNES code at 5 Å cluster size. Combining different off-line structural characterization techniques (XRD, FESEM, XPS, and HRTEM), along with those of synchrotron radiation-based techniques (XAFS and XRF) is necessary for complementary and supported average crystal, chemical, morphological and local electronic structural analyses for unveiling the variation between Bi2Te3 in the nanostructure/thin film and nanopowder morphology, and then connecting between the structural features and functions of BT in two different morphologies. After that, we measured the Seebeck coefficient and the power factor values for both the BT nanopowder and thin film.
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Affiliation(s)
- N G Imam
- Experimental Nuclear Physics Department (Solid State Laboratory), Nuclear Research Center (NRC), Egyptian Atomic Energy Authority (EAEA) Cairo 13759 Egypt
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Shaimaa Elyamny
- Electronic Materials Research Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City, P.O. Box 21934 Alexandria Egypt
| | - Giuliana Aquilanti
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Simone Pollastri
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Lara Gigli
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Abd El-Hady B Kashyout
- Electronic Materials Research Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City, P.O. Box 21934 Alexandria Egypt
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Sojo-Gordillo JM, Sierra CD, Gadea Diez G, Segura-Ruiz J, Bonino V, Nuñez Eroles M, Gonzalez-Rosillo JC, Estrada-Wiese D, Salleras M, Fonseca L, Morata A, Tarancón A. Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro-Harvesters. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206399. [PMID: 36720043 DOI: 10.1002/smll.202206399] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Revised: 12/27/2022] [Indexed: 06/18/2023]
Abstract
Semiconductor nanowires have demonstrated fascinating properties with applications in a wide range of fields, including energy and information technologies. Particularly, increasing attention has focused on SiGe nanowires for applications in a thermoelectric generation. In this work, a bottom-up vapour-liquid-solid chemical vapour Deposition methodology is employed to integrate heavily boron-doped SiGe nanowires on thermoelectric generators. Thermoelectrical properties -, i.e., electrical and thermal conductivities and Seebeck coefficient - of grown nanowires are fully characterized at temperatures ranging from 300 to 600 K, allowing the complete determination of the Figure-of-merit, zT, with obtained values of 0.4 at 600 K for optimally doped nanowires. A correlation between doping level, thermoelectric performance, and elemental distribution is established employing advanced elemental mapping (synchrotron-based nano-X-ray fluorescence). Moreover, the operation of p-doped SiGe NWs integrated into silicon micromachined thermoelectrical generators is shown over standalone and series- and parallel-connected arrays. Maximum open circuit voltage of 13.8 mV and power output as high as 15.6 µW cm-2 are reached in series and parallel configurations, respectively, operating upon thermal gradients generated with hot sources at 200 °C and air flows of 1.5 m s-1 . These results pave the way for direct application of SiGe nanowire-based micro-thermoelectric generators in the field of the Internet of Things.
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Affiliation(s)
- Jose Manuel Sojo-Gordillo
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Carolina Duque Sierra
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Gerard Gadea Diez
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Jaime Segura-Ruiz
- Beamline ID-16B, ESRF: The European Synchrotron, 71, Avenue des Martyr, Grenoble, 38043, France
| | - Valentina Bonino
- Beamline ID-16B, ESRF: The European Synchrotron, 71, Avenue des Martyr, Grenoble, 38043, France
| | - Marc Nuñez Eroles
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Juan Carlos Gonzalez-Rosillo
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Denise Estrada-Wiese
- Institute of Microelectronics of Barcelona, IMB-CNM (CSIC), C/Til⋅lers s/n (Campus UAB), Bellaterra, Barcelona, 08193, Spain
| | - Marc Salleras
- Institute of Microelectronics of Barcelona, IMB-CNM (CSIC), C/Til⋅lers s/n (Campus UAB), Bellaterra, Barcelona, 08193, Spain
| | - Luis Fonseca
- Institute of Microelectronics of Barcelona, IMB-CNM (CSIC), C/Til⋅lers s/n (Campus UAB), Bellaterra, Barcelona, 08193, Spain
| | - Alex Morata
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Albert Tarancón
- Department of Advanced Materials, Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
- Catalan Institution for Research and Advanced Studies (ICREA), Passeig Lluís Companys 23, Barcelona, 08010, Spain
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Pennelli G, Dimaggio E, Masci A. Silicon Nanowires: A Breakthrough for Thermoelectric Applications. MATERIALS 2021; 14:ma14185305. [PMID: 34576529 PMCID: PMC8466014 DOI: 10.3390/ma14185305] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Revised: 09/07/2021] [Accepted: 09/09/2021] [Indexed: 12/26/2022]
Abstract
The potentialities of silicon as a starting material for electronic devices are well known and largely exploited, driving the worldwide spreading of integrated circuits. When nanostructured, silicon is also an excellent material for thermoelectric applications, and hence it could give a significant contribution in the fundamental fields of energy micro-harvesting (scavenging) and macro-harvesting. On the basis of recently published experimental works, we show that the power factor of silicon is very high in a large temperature range (from room temperature up to 900 K). Combining the high power factor with the reduced thermal conductivity of monocrystalline silicon nanowires and nanostructures, we show that the foreseen figure of merit ZT could be very high, reaching values well above 1 at temperatures around 900 K. We report the best parameters to optimize the thermoelectric properties of silicon nanostructures, in terms of doping concentration and nanowire diameter. At the end, we report some technological processes and solutions for the fabrication of macroscopic thermoelectric devices, based on large numbers of silicon nanowire/nanostructures, showing some fabricated demonstrators.
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