Host-Guest Intercalation Chemistry for the Synthesis and Modification of Two-Dimensional Transition Metal Dichalcogenides

Atomically-Thin Holey 2D Nanosheets of Defect-Engineered MoN-Mo5 N6 Composites as Effective Hybridization Matrices

The defect engineering of inorganic solids has received significant attention because of its high efficacy in optimizing energy-related functionalities. Consequently, this approach is effectively leveraged in the present study to synthesize atomically-thin holey 2D nanosheets of a MoN-Mo5 N6 composite. This is achieved by controlled nitridation of assembled MoS2 monolayers, which induced sequential cation/anion migration and a gradual decrease in the Mo valency. Precise control of the interlayer distance of the MoS2 monolayers via assembly with various tetraalkylammonium ions is found to be crucial for synthesizing sub-nanometer-thick holey MoN-Mo5 N6 nanosheets with a tunable anion/cation vacancy content. The holey MoN-Mo5 N6 nanosheets are employed as efficient immobilization matrices for Pt single atoms to achieve high electrocatalytic mass activity, decent durability, and low overpotential for the hydrogen evolution reaction (HER). In situ/ex situ spectroscopy and density functional theory (DFT) calculations reveal that the presence of cation-deficient Mo5 N6 domain is crucial for enhancing the interfacial interactions between the conductive molybdenum nitride substrate and Pt single atoms, leading to enhanced electron injection efficiency and electrochemical stability. The beneficial effects of the Pt-immobilizing holey MoN-Mo5 N6 nanosheets are associated with enhanced electronic coupling, resulting in improvements in HER kinetics and interfacial charge transfer.

Hierarchical Spatial Confinement Unlocking the Storage Limit of MoS2 for Flexible High-Energy Supercapacitors

Molybdenum sulfide (MoS2) is a promising electrode material for supercapacitors; however, its limited Mo/S edge sites and intrinsic inert basal plane give rise to sluggish active electronic states, thus constraining its electrochemical performance. Here we propose a hierarchical confinement strategy to develop ethylene molecule (EG)-intercalated Co-doped sulfur-deficient MoS2 (Co-EG/SV-MoS2) for efficient and durable K-ion storage. Theoretical analyses suggest that the intercalation-confined EG and lattice-confined Co can enhance the interfacial K-ion storage capacity while reducing the K-ion diffusion barrier. Experimentally, the intercalated EG molecules with mildly reducing properties induced the creation of sulfur vacancies, expanded the interlayer spacing, regulated the 2H-1T phase transition, and strengthened the structural grafting between layers, thereby facilitating ion diffusion and ensuring structural durability. Moreover, the Co dopants occupying the initial Mo sites initiated charge transfer, thus activating the basal plane. Consequently, the optimized Co-EG/SV-MoS2 electrode exhibited a substantially improved electrochemical performance. Flexible supercapacitors assembled with Co-EG/SV-MoS2 delivered a notable areal energy density of 0.51 mW h cm-2 at 0.84 mW cm-2 with good flexibility. Furthermore, supercapacitor devices were integrated with a strain sensor to create a self-powered system capable of real-time detection of human joint motion.

Two Dimensional Ir-Based Catalysts for Acidic OER

Electrochemical water splitting in acidic media is one of the most promising hydrogen production technologies, yet its practical applications in proton exchange membrane (PEM) water electrolyzers are limited by the anodic oxygen evolution reaction (OER). Iridium (Ir)-based materials are considered as the state-of-the-art catalysts for acidic OER due to their good stability under harsh acidic conditions. However, their activities still have much room for improvement. Two-dimensional (2D) materials are full of the advantages of high-surface area, unique electrical properties, facile surface modification, and good stability, making the development of 2D Ir-based catalysts more attractive for achieving high catalytic performance. In this review, first, the unique advantages of 2D catalysts for electrocatalysis are reviewed. Thereafter, the classification, synthesis methods, and recent OER achievements of 2D Ir-based materials, including pure metals, alloys, oxides, and perovskites are introduced. Finally, the prospects and challenges of developing 2D Ir-based catalysts for future acidic OER are discussed.

The effects of intercalated environmental gas molecules on carrier dynamics in WSe2/WS2 heterostructures

Effective tuning of carrier dynamics in two-dimensional (2D) materials is significant for multi-scene device applications. Using first-principles and ab initio nonadiabatic molecular dynamics calculations, the kinetics of O₂, H₂O, and N₂ intercalation into 2D WSe₂/WS₂ van der Waals heterostructures and its effect on carrier dynamics have been comprehensively explored. It is found that the O₂ molecule prefers to dissociate into atomic O atoms spontaneously after intercalation of WSe₂/WS₂ heterostructures, whereas H₂O and N₂ molecules remain intact. O₂ intercalation significantly speeds up the electron separation process, while H₂O intercalation largely speeds up the hole separation process. The lifetime of excited carriers can be prolonged by O₂ or H₂O or N₂ intercalations. These intriguing phenomena can be attributed to the effect of interlayer coupling, and the underlying physical mechanism for tuning the carrier dynamics is fully discussed. Our results provide useful guidance for the experimental design of 2D heterostructures for optoelectronic applications in photocatalysts and solar energy cells.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.