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Wang Z, Wang H, Wang P, Shao Y. Robust Optical Physical Unclonable Function Based on Total Internal Reflection for Portable Authentication. ACS Appl Mater Interfaces 2024. [PMID: 38743936 DOI: 10.1021/acsami.4c03283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Physical unclonable functions (PUFs) utilize uncontrollable manufacturing randomness to yield cryptographic primitives. Currently, the fabrication of the most generally employed optical PUFs mainly depends on fluorescent, Raman, or plasmonic materials, which suffer inherent robustness issues. Herein, we construct an optical PUF with high environmental stability via total internal reflection (TIR-PUF) perturbed by randomly distributed polymer microspheres. The response image is transformed into encoded keys via an iterative binning procedure. The concentration of the polymer solution is optimized to debias the bit nonuniformity and maximize encoding capacity. The constructed TIR-PUF shows significantly high encoding capacity (2370) and markedly low total authentication error probability (1.614 × 10-23). The intra-Hamming distance is as low as 0.068, indicating the excellent readout reliability of TIR-PUF. The environmental stability of TIR-PUF has demonstrated promising results under a range of challenging conditions such as ultrasonic washing, high temperature, ultraviolet irradiation, and severe chemical environments. Moreover, the challenge-response pairs of our TIR-PUFs are demonstrated on an authentication system with low-power dissipation, lightweight components, and wireless imaging capture, rendering the possibility of portable authentication for practical applications.
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Affiliation(s)
- Zhiyuan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Pengxiang Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
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2
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Li Y, Li Y, Yang J, Chen Z, Feng M, Liu L, Song F, Huang W. Dual Challenge-Response Systems of a Three-Dimensional "Bionic" Fluorescent Physically Unclonable Function Label. ACS Appl Mater Interfaces 2024. [PMID: 38703103 DOI: 10.1021/acsami.4c01534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2024]
Abstract
Inspired by the light and dark variations observed in natural cloud clusters under sunlight, we propose a three-dimensional (3D) "bionic" fluorescent physically unclonable function (PUF) label. The minimalist preparation process eliminates the need for expensive traditional instruments, thus offering new insight into the widespread adoption of 3D PUF labels. The Eu(CCA)3(H2O)2 powder, which is the first to propose its secondary building unit, was chosen as the fluorescent material. Its 3D morphology is preserved in the resin to mimic cloud-like structures. Furthermore, the luminescent properties are elucidated through experimental tests and first-principles calculations. To overcome the coding capacity limitation of traditional two-dimensional (2D) fluorescent PUF labels, a dual challenge-response system model is proposed. The shallow and deep models provide anticounterfeiting information from macro and micro perspectives, respectively. This successfully increases the encoding capacity from 210×10 to 2100×10000 for a 10 × 10 pixel binary code. Therefore, 3D "bionic" fluorescent PUF labels strike a balance between the simple usage of PUF labels and enhanced label security.
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Affiliation(s)
- Yan Li
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
| | - Yang Li
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
| | - Jiaxin Yang
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
| | - Ziyu Chen
- School of Electronic Information, Huzhou College, Huzhou, Zhejiang 313000, People's Republic of China
| | - Ming Feng
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
| | - Lisa Liu
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
| | - Feng Song
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Wei Huang
- School of Physics and Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, People's Republic of China
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, Nanjing, Jiangsu 211816, People's Republic of China
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3
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Wang Z, Wang H, Li F, Gao X, Shao Y. Physical Unclonable Functions Based on Photothermal Effect of Gold Nanoparticles. ACS Appl Mater Interfaces 2024; 16:17954-17964. [PMID: 38562008 DOI: 10.1021/acsami.3c18270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Physical unclonable functions (PUFs) based on uncontrollable fabrication randomness are promising candidates for anticounterfeiting applications. Currently, the most popular optical PUFs are generally constructed from the scattering, fluorescent, or Raman phenomenon of nanomaterials. To further improve the security level of optical PUFs, advanced functions transparent to the above optical phenomenon have always been perused by researchers. Herein, we propose a new type of PUF based on the photothermal effect of gold nanoparticles, which shows negligible scattering, fluorescent, or Raman responses. The gold nanoparticles are randomly dispersed onto the surface of fused silica, which can enhance the photothermal effect and facilitate high contrast responses. By tuning the areal density of the gold nanoparticles, the optimized encoding capacity (2319) and the total authentication error probability (3.6428 × 10-24) are achieved from our PUF due to excellent bit uniformity (0.519) and inter Hamming distances (0.503). Moreover, the intra-Hamming distance (0.044) indicates the desired reliability. This advanced PUF with invisible features and high contrast responses provides a promising opportunity to implement authentication and identification with high security.
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Affiliation(s)
- Zhiyuan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Fenghua Li
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Xinyu Gao
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
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Esidir A, Pekdemir S, Kalay M, Onses MS. Ultradurable Embedded Physically Unclonable Functions. ACS Appl Mater Interfaces 2024; 16:16532-16543. [PMID: 38511845 PMCID: PMC10995905 DOI: 10.1021/acsami.4c01726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 03/06/2024] [Accepted: 03/07/2024] [Indexed: 03/22/2024]
Abstract
Physically unclonable functions (PUFs) have attracted growing interest for anticounterfeiting and authentication applications. The practical applications require durable PUFs made of robust materials. This study reports a practical strategy to generate extremely robust PUFs by embedding random features onto a substrate. The chaotic and low-cost electrohydrodynamic deposition process generates random polymeric features over a negative-tone photoresist film. These polymer features function as a conformal photomask, which protects the underlying photoresist from UV light, thereby enabling the generation of randomly positioned holes. Dry plasma etching of the substrate and removal of the photoresist result in the transfer of random features to the underlying silicon substrate. The matching of binary keys and features via different algorithms facilitates authentication of features. The embedded PUFs exhibit extreme levels of thermal (∼1000 °C) and mechanical stability that exceed the state of the art. The strength of this strategy emerges from the PUF generation directly on the substrate of interest, with stability that approaches the intrinsic properties of the underlying material. Benefiting from the materials and processes widely used in the semiconductor industry, this strategy shows strong promise for anticounterfeiting and device security applications.
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Affiliation(s)
- Abidin Esidir
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Materials Science and Engineering, Erciyes
University, Kayseri 38039, Turkey
- Graduate
School of Natural and Applied Science, Materials Science and Engineering
Program, Erciyes University, Kayseri 38039, Turkey
| | - Sami Pekdemir
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Aeronautical Engineering, Faculty of Aeronautics and Astronautics, Erciyes University, Kayseri 38039, Turkey
| | - Mustafa Kalay
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Electricity and Energy, Kayseri University, Kayseri 38039, Turkey
| | - Mustafa Serdar Onses
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Materials Science and Engineering, Erciyes
University, Kayseri 38039, Turkey
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He K, Cai P, Ji S, Tang Z, Fang Z, Li W, Yu J, Su J, Luo Y, Zhang F, Wang T, Wang M, Wan C, Pan L, Ji B, Li D, Chen X. An Antidehydration Hydrogel Based on Zwitterionic Oligomers for Bioelectronic Interfacing. Adv Mater 2024; 36:e2311255. [PMID: 38030137 DOI: 10.1002/adma.202311255] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Revised: 11/27/2023] [Indexed: 12/01/2023]
Abstract
Hydrogels are ideal interfacing materials for on-skin healthcare devices, yet their susceptibility to dehydration hinders their practical use. While incorporating hygroscopic metal salts can prevent dehydration and maintain ionic conductivity, concerns arise regarding metal toxicity due to the passage of small ions through the skin barrier. Herein, an antidehydration hydrogel enabled by the incorporation of zwitterionic oligomers into its network is reported. This hydrogel exhibits exceptional water retention properties, maintaining ≈88% of its weight at 40% relative humidity, 25 °C for 50 days and about 84% after being heated at 50 °C for 3 h. Crucially, the molecular weight design of the embedded oligomers prevents their penetration into the epidermis, as evidenced by experimental and molecular simulation results. The hydrogel allows stable signal acquisition in electrophysiological monitoring of humans and plants under low-humidity conditions. This research provides a promising strategy for the development of epidermis-safe and biocompatible antidehydration hydrogel interfaces for on-skin devices.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Pingqiang Cai
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Shaobo Ji
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zihan Tang
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027, China
| | - Zhou Fang
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027, China
| | - Wenlong Li
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Jing Yu
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Yifei Luo
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Feilong Zhang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ming Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Changjin Wan
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Liang Pan
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Baohua Ji
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027, China
| | - Dechang Li
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027, China
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
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Park J, Leem JW, Park M, Kim JO, Ku Z, Chegal W, Kang SW, Kim YL. Heteronanostructured Field-Effect Transistors for Enhancing Entropy and Parameter Space in Electrical Unclonable Primitives. ACS Nano 2024; 18:1041-1053. [PMID: 38117976 PMCID: PMC10786166 DOI: 10.1021/acsnano.3c10308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 12/08/2023] [Accepted: 12/14/2023] [Indexed: 12/22/2023]
Abstract
Hardware security is not a new problem but is ever-growing in consumer and medical domains owing to hyperconnectivity. A physical unclonable function (PUF) offers a promising hardware security solution for cryptographic key generation, identification, and authentication. However, electrical PUFs using nanomaterials or two-dimensional (2D) transition metal dichalcogenides (TMDCs) often have limited entropy and parameter space sources, both of which increase the vulnerability to attacks and act as bottlenecks for practical applications. We report an electrical PUF with enhanced entropy as well as parameter space by incorporating 2D TMDC heteronanostructures into field-effect transistors (FETs). Lateral heteronanostructures of 2D molybdenum disulfide and tungsten disulfide serve as a potent entropy source. The variable feature of FETs is further leveraged to enhance the parameter space that provides multiple challenge-response pairs, which are essential for PUFs. This combination results in stably repeatable yet highly variable FET characteristics as alternative electrical PUFs. Comprehensive PUF performance analyses validate the bit uniformity, reproducibility, uniqueness, randomness, false rates, and encoding capacity. The 2D material heteronanostructure-driven electrical PUFs with strong FET-to-FET variability can potentially be augmented as an immediately deployable and scalable security solution for various hardware devices.
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Affiliation(s)
- Jaeseo Park
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
- Precision
Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Jung Woo Leem
- Weldon
School of Biomedical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Minji Park
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Jun Oh Kim
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Zahyun Ku
- Materials
and Manufacturing Directorate, Air Force
Research Laboratory, Wright-Patterson
AFB, Ohio 45433, United States
| | - Won Chegal
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Sang-Woo Kang
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
- Precision
Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Young L. Kim
- Weldon
School of Biomedical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
- Purdue
Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
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Yan X, Li B, Zhang Y, Wang Y, Wang C, Chi Y, Yang X. Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors. Micromachines (Basel) 2023; 14:2121. [PMID: 38004978 PMCID: PMC10673561 DOI: 10.3390/mi14112121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 11/13/2023] [Accepted: 11/17/2023] [Indexed: 11/26/2023]
Abstract
Printing technology will improve the complexity and material waste of traditional deposition and lithography processes in device fabrication. In particular, the printing process can effectively control the functional layer stacking and channel shape in thin-film transistor (TFT) devices. We prepared the patterning indium gallium zinc oxide (IGZO) semiconductor layer with Ga, In, and Zn molar ratios of 1:2:7 on Si/SiO2 substrates. And the patterning source and drain electrodes were printed on the surface of semiconductor layers to construct a TFT device with the top contact and bottom gate structures. To overcome the problem of uniform distribution of applied voltages between electrode centers and edges, we investigated whether the circular arc channel could improve the carrier regulation ability under the field effect in printed TFTs compared with a traditional structure of rectangular symmetry and a rectangular groove channel. The drain current value of the IGZO TFT with a circular arc channel pattern was significantly enhanced compared to that of a TFT with rectangular symmetric source/drain electrodes under the corresponding drain-source voltage and gate voltage. The field effect properties of the device were obviously improved by introducing the arc-shaped channel structure.
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Affiliation(s)
- Xingzhen Yan
- Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China; (B.L.); (Y.Z.); (Y.W.); (C.W.); (Y.C.)
| | | | | | | | | | | | - Xiaotian Yang
- Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China; (B.L.); (Y.Z.); (Y.W.); (C.W.); (Y.C.)
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