Overlapping electron density and the global delocalization of π-aromatic fragments as the reason of conductivity of the biphenylene network

Engineering Two-Dimensional Nodal Semimetals in Functionalized Biphenylene by Fluorine Adatoms

We propose a band engineering scheme on the biphenylene network, a newly synthesized carbon allotrope. We illustrate that the electronic structure of the biphenylene network can be significantly altered by controlling conditions affecting the symmetry and destructive interference of wave functions through periodic fluorination. First, we investigate the mechanism for the appearance of a type-II Dirac fermion in a pristine biphenylene network. We show that the essential ingredients are mirror symmetries and stabilization of the compact localized eigenstates via destructive interference. While the former is used for the band-crossing point along high symmetry lines, the latter induces highly inclined Dirac dispersions. Subsequently, we demonstrate the transformation of the biphenylene network's type-II Dirac semimetal phase into various Dirac phases such as type-I Dirac, gapped type-II Dirac, and nodal line semimetals through the deliberate disruption of mirror symmetry or modulation of destructive interference by varying the concentration of fluorine atoms.

Insights into the DHQ-BN: mechanical, electronic, and optical properties

Computational materials research is vital in improving our understanding of various class of materials and their properties, contributing valuable information that helps predict innovative structures and complement empirical investigations. In this context, DHQ-graphene recently emerged as a stable two-dimensional carbon allotrope composed of decagonal, hexagonal, and quadrilateral carbon rings. Here, we employ density functional theory calculations to investigate the mechanical, electronic, and optical features of its boron nitride counterpart (DHQ-BN). Our findings reveal an insulating band gap of 5.11 eV at the HSE06 level and good structural stability supported by phonon calculations and ab initio molecular dynamics simulations. Moreover, DHQ-BN exhibits strong ultraviolet (UV) activity, suggesting its potential as a highly efficient UV light absorber. Its mechanical properties, including Young's modulus (230 GPa) and Poisson's ratio (0.7), provide insight into its mechanical resilience and structural stability.

Bismuth Infrared Star: Being at a Glance

Bismuth polycations have garnered significant attention from researchers due to their extraordinary and counter-intuitive structures and stoichiometries. Despite extensive experimental and theoretical investigations, understanding of the bonding in such clusters remains insufficient. An AdNDP bonding analysis was conducted to elucidate the bonding characteristics using both homoatomic and heteroatomic bismuth clusters with various stoichiometries. Analysis of the calculated nucleus-independent chemical shift data confirmed the aromatic nature of these species. Universal bonding patterns were identified that can be applied to a range of homoatomic and heteroatomic bismuth clusters. Additionally, calculations of absorbance and fluorescence spectra were performed to gain insights into the near-infrared emission and establish a potential correlation between absorbance and the identified bonding patterns.

Opening a Band Gap in Biphenylene Monolayer via Strain: A First-Principles Study

A biphenylene network is a novel 2D allotropy of carbon with periodic 4-6-8 rings, which was synthesized successfully in 2021. In recent years, although the mechanical properties and thermal transport received a lot of research attention, how to open the Dirac cone in the band structure of a biphenylene network is still a confused question. In this work, we utilized uniaxial and biaxial lattice strains to manipulate the electronic properties and phonon frequencies of biphenylene, and we found an indirect band gap under 10% biaxial strain through the first-principles calculations. This indirect band gap is caused by the competition between the band-edge state A and the Dirac cone for the conduction band minimum (CBM). Additionally, the lightest carrier's effective mass in biphenylene is 0.184 m₀ for electrons along x (Γ→X) direction, while the effective mass for holes shows a remarkable anisotropy, suggesting the holes in the tensile biphenylene monolayer are confined within a one-dimensional chain along x direction. For phonon dispersion, we discovered that the Raman-active Ag3 phonon mode shows a robust single phonon mode character under both compressive and tensile strain, but its frequency is sensitive to lattice strain, suggesting the lattice strain in biphenylene can be identified by Raman spectroscopy.