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Li Z, Zhang L, Liu S, Yang X, Gao W, Chen Y, Leng Y, Lu Z, Ma L, Lu D, Liu X, Duan X, Wang Y, Liao L, Liu Y. Edge-by-Edge Lateral Heterostructure through Interfacial Sliding. Nano Lett 2024; 24:770-776. [PMID: 38180314 DOI: 10.1021/acs.nanolett.3c04699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
van der Waals heterostructures (vdWHs) based on two-dimensional (2D) semiconductors have attracted considerable attention. However, the reported vdWHs are largely based on vertical device structure with large overlapping area, while the realization of lateral heterostructures contacted through 2D edges remains challenging and is majorly limited by the difficulties of manipulating the lateral distance of 2D materials at nanometer scale (during transfer process). Here, we demonstrate a simple interfacial sliding approach for realizing an edge-by-edge lateral contact. By stretching a vertical vdWH, two 2D flakes could gradually slide apart or toward each other. Therefore, by applying proper strain, the initial vertical vdWH could be converted into a lateral heterojunction with intimately contacted 2D edges. The lateral contact structure is supported by both microscope characterization and in situ electrical measurements, exhibiting carrier tunneling behavior. Finally, this approach can be extended to 3D thin films, as demonstrated by the lateral 2D/3D and 3D/3D Schottky junction.
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Affiliation(s)
- Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Longbin Zhang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Songlong Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Weiqi Gao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yingbo Leng
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. Nanoscale 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Kang T, Lu Z, Liu L, Huang M, Hu Y, Liu H, Wu R, Liu Z, You J, Chen Y, Zhang K, Duan X, Wang N, Liu Y, Luo Z. In Situ Defect Engineering of Controllable Carrier Types in WSe 2 for Homomaterial Inverters and Self-Powered Photodetectors. Nano Lett 2023. [PMID: 38038404 DOI: 10.1021/acs.nanolett.3c03328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.
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Affiliation(s)
- Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yunxia Hu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, No. 9 Yuexing first RD, Hi-Tech Park, Nanshan, Shenzhen 518057, People's Republic of China
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4
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Yuan H, Xu R, Ren J, Yang J, Wang S, Tian D, Fu Y, Li Q, Peng X, Wang X. Anisotropic charge transfer and gate tuning for p-SnS/n-MoS 2 vertical van der Waals diodes. Nanoscale 2023; 15:15344-15351. [PMID: 37698246 DOI: 10.1039/d3nr03508e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS2, and a high rectification ratio of 3.1 × 104 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect.
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Affiliation(s)
- Hui Yuan
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Ruihan Xu
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Jiale Ren
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Jielin Yang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Shouyang Wang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Dongwen Tian
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Yingshuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Quan Li
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China.
| | - Xiaoniu Peng
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Xina Wang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
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5
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Aftab S, Hegazy HH. Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices. Small 2023; 19:e2205778. [PMID: 36732842 DOI: 10.1002/smll.202205778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 01/20/2023] [Indexed: 05/04/2023]
Abstract
The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, Abha, P.O. Box 9004, Saudi Arabia
- 2Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, P. O. Box 9004, Saudi Arabia
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6
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Ogura H, Kawasaki S, Liu Z, Endo T, Maruyama M, Gao Y, Nakanishi Y, Lim HE, Yanagi K, Irisawa T, Ueno K, Okada S, Nagashio K, Miyata Y. Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics. ACS Nano 2023; 17:6545-6554. [PMID: 36847351 DOI: 10.1021/acsnano.2c11927] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS2 from the edges of mechanically exfoliated multilayer flakes of WSe2 or NbxMo1-xS2. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS2 on the exfoliated flakes. For the WSe2/MoS2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the NbxMo1-xS2/MoS2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS2. The formation of a staggered gap band alignment of NbxMo1-xS2/MoS2 is also supported by first-principles calculations.
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Affiliation(s)
- Hiroto Ogura
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Seiya Kawasaki
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yanlin Gao
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Hong En Lim
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Toshifumi Irisawa
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
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Yue D, Ju X, Hu T, Rong X, Liu X, Liu X, Ng HK, Chi D, Wang X, Wu J. Homogeneous in-plane WSe 2 P-N junctions for advanced optoelectronic devices. Nanoscale 2023; 15:4940-4950. [PMID: 36786036 DOI: 10.1039/d2nr06263a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Conventional doping schemes of silicon (Si) microelectronics are incompatible with atomically thick two-dimensional (2D) transition metal dichalcogenides (TMDCs), which makes it challenging to construct high-quality 2D homogeneous p-n junctions. Herein, we adopt a simple yet effective plasma-treated doping method to seamlessly construct a lateral 2D WSe2 p-n homojunction. WSe2 with ambipolar transport properties was exposed to O2 plasma to form WOx on the surface in a self-limiting process that induces hole doping in the underlying WSe2via electron transfer. Different electrical behaviors were observed between the as-exfoliated (ambipolar) region and the O2 plasma-treated (p-doped) region under electrostatic modulation of the back-gate bias (VBG), which produces a p-n in-plane homojunction. More importantly, a small contact resistance of 710 Ω μm with a p-doped region transistor mobility of ∼157 cm2 V-1 s-1 was achieved due to the transformation of Schottky contact into Ohmic contact after plasma treatment. This effectively avoids Fermi-level pinning and significantly improves the performance of photodetectors. The resultant WSe2 p-n junction device thus exhibits a high photoresponsivity of ∼7.1 × 104 mA W-1 and a superior external quantum efficiency of ∼228%. Also, the physical mechanism of charge transfer in the WSe2 p-n homojunction was analyzed. Our proposed strategy offers a powerful route to realize low contact resistance and high photoresponsivity in 2D TMDC-based optoelectronic devices, paving the way for next-generation atomic-thickness optoelectronics.
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Affiliation(s)
- Dewu Yue
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Xin Ju
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Tao Hu
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Ximing Rong
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Xiao Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Hong Kuan Ng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Dongzhi Chi
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Xinzhong Wang
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Jing Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
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8
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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9
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Shang H, Gao F, Dai M, Hu Y, Wang S, Xu B, Wang P, Gao B, Zhang J, Hu P. Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions. Small Methods 2023; 7:e2200966. [PMID: 36440646 DOI: 10.1002/smtd.202200966] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Indexed: 06/16/2023]
Abstract
Self-powered photodetectors have attracted widespread attention due to their low power consumption which can be driven by the built-in electric field instead of external power, but it is very difficult to achieve high responsivity and fast response speed concurrently. Here, a self-powered photodetector with light-induced electric field enhancement based on a 2D InSe/WSe2 /SnS2 van der Waals heterojunction is designed. The light-induced electric field derived from the photo-generated electrons of SnS2 accumulated at the SnS2 /WSe2 interface produces an additional negative gate voltage applied to the WSe2 layer, which enhances the built-in electric field in the InSe/WSe2 /SnS2 heterojunction. Accordingly, the photocurrent and photoresponse speed of the heterostructure device are largely improved. The self-powered photodetector based on the InSe/WSe2 /SnS2 heterostructure exhibits a high responsivity of 550 mA W-1 , which is a 50 times increase compared to the InSe/WSe2 photodetector, and the response speed (110/120 µs) is one order of magnitude faster than that of the InSe/WSe2 photodetector. The high responsivity and fast speed are caused by the stronger built-in electric field modulated by a light-induced electric field, which can separate carriers effectively and reduce drift times. This device architecture can provide a new avenue to fabricate high-responsivity, fast self-power photodetectors by utilizing the van der Waals heterojunction.
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Affiliation(s)
- Huiming Shang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Feng Gao
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - YunXia Hu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Shuai Wang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Bo Xu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Peng Wang
- School of Information Engineering, Zhejiang Ocean University, Zhoushan, 316022, China
| | - Bo Gao
- School of physics, Harbin Institute of Technology, Harbin, 150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of mechatronic engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - PingAn Hu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China
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10
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Li J, Ma Y, Li Y, Li SS, An B, Li J, Cheng J, Gong W, Zhang Y. Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions. ACS Omega 2022; 7:39187-39196. [PMID: 36340091 PMCID: PMC9631909 DOI: 10.1021/acsomega.2c05151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a simple chemical vapor deposition (CVD) method, which can effectively separate the growth process of different TMDs, thus resulting in good regulation of the composition change at the junction region. By this method, MoS2-WS2 lateral heterojunctions with sharp interfaces have been obtained with good rectification characteristics, ∼105 on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.
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Affiliation(s)
- Jingtao Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Yang Ma
- Faculty
of Information Technology, Key Laboratory of Opto-Electronics Technology,
Ministry of Education, Beijing University
of Technology, Beijing 100124, China
| | - Yufo Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Shao-Sian Li
- Institute
of Materials Science and Engineering, National
Taipei University of Technology, Taipei City 10608, Taiwan
| | - Boxing An
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Jingjie Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Jiangong Cheng
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Wei Gong
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Yongzhe Zhang
- Faculty
of Information Technology, Key Laboratory of Opto-Electronics Technology,
Ministry of Education, Beijing University
of Technology, Beijing 100124, China
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11
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Vu VT, Phan TL, Vu TTH, Park MH, Do VD, Bui VQ, Kim K, Lee YH, Yu WJ. Synthesis of a Selectively Nb-Doped WS 2-MoS 2 Lateral Heterostructure for a High-Detectivity PN Photodiode. ACS Nano 2022; 16:12073-12082. [PMID: 35913119 DOI: 10.1021/acsnano.2c02242] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed. The different chemical activity reactivity (MoO3 > WO3 > Nb2O5) enable the separation of the growth temperature of intrinsic MoS2 to 700 °C (first grown inner layer) and Nb-doped WS2 to 800 °C (second grown outer layer). By controlling the Nb/(W+Nb) molar ratio in the solution precursor, the hole carrier density in the p-type WS2 layer is selectively controlled from approximately 1.87 × 107/cm2 at 1.5 at.% Nb to approximately 1.16 × 1013/cm2 at 8.1 at.% Nb, while the electron carrier density in n-type MoS2 shows negligible change with variation of the Nb molar ratio. As a result, the electrical behavior of the WS2-MoS2 heterostructure transforms from the N-N junction (0 at.% Nb) to the P-N junction (4.5 at.% Nb) and the P-N tunnel junction (8.1 at.% Nb). The band-to-band tunneling at the P-N tunnel junction (8.1 at.% Nb) is eliminated by applying negative gate bias, resulting in a maximum rectification ratio (105) and a minimum channel resistance (108 Ω). With this optimized photodiode (8.1 at.% Nb at Vg = -30 V), an Iphoto/Idark ratio of 6000 and a detectivity of 1.1 × 1014 Jones are achieved, which are approximately 20 and 3 times higher, respectively, than the previously reported highest values for CVD-grown transition-metal dichalcogenide P-N junctions.
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Affiliation(s)
- Van Tu Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Thanh Huong Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Mi Hyang Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Van Dam Do
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Viet Quoc Bui
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kunnyun Kim
- Korea Electronics Technology Institute, Seongnam, 13509, Republic of Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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12
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Zou H, Wang X, Zhou K, Li Y, Fu Y, Zhang L. Electronic property modulation in two-dimensional lateral superlattices of monolayer transition metal dichalcogenides. Nanoscale 2022; 14:10439-10448. [PMID: 35816154 DOI: 10.1039/d2nr02189g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Fabricating lateral heterostructures (HSs) and superlattices (SLs) provides a unique degree of freedom for modulating the physical properties of two-dimensional (2D) materials by varying the chemical component, geometric size and interface structure in the ultra-thin atomic thickness limit. While a variety of 2D lateral HSs/SLs have been synthesized, especially for transition metal dichalcogenides (TMDs), how such structures affect quantitatively the physical properties of 2D materials has not yet been established. We herein explore electronic property modulation in 2D lateral SLs of monolayer TMDs through first-principles high-throughput calculations. The dependence of the electronic structure, bandgap, carrier effective masses, charge density overlap on chemical components, interface type, and sub-lattice size of lateral TMD-SLs are investigated. We find that by comparison with their random alloy counterparts, the lateral TMD-SLs exhibit generally type-II band alignment, a wider range of bandgap tunability, larger carrier effective masses, and stronger electron-hole charge separation tendency. The bandgap variation with a sub-lattice size shows larger bowing parameters for the SLs with heterogeneous anions, by comparison with the homogeneous anion cases. A similar behavior is observed for the SLs with an armchair-type interface, by comparison with the zigzag-type interface cases. Further analyses reveal that the underlying physical mechanism can be attributed to the synergistic interplay among the band offset of sub-lattices, quantum confinement effect, and existing internal strain.
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Affiliation(s)
- Hongshuai Zou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Xinjiang Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Kun Zhou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yawen Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
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13
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Zhao L, Yang B, Zhuang G, Wen Y, Zhang T, Lin M, Zhuang Z, Yu Y. Thin In-Plane In 2 O 3 /ZnIn 2 S 4 Heterostructure Formed by Topological-Atom-Extraction: Optimal Distance and Charge Transfer for Effective CO 2 Photoreduction. Small 2022; 18:e2201668. [PMID: 35833293 DOI: 10.1002/smll.202201668] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
Exploitation of atomic-level principles to optimize the charge transfer on ultrathin 2D heterostructures is an emerging frontier in relieving the energy and environmental crisis. Herein, a facile "topological-atom-extraction" protocol is disclosed, i.e., selective extraction of Zn from ultrathin half-unit-cell ZnIn2 S4 (HZIS) can embed thin In2 O3 domain into 1.60 nm thick HZIS layer to create an atomically thin in-plane In2 O3 /HZIS heterostructure. Thanks to the optimal distance and capability of charge separation, the in-plane In2 O3 /HZIS heterostructure is among the best ZnIn2 S4 -based CO2 reduction reaction (CRR) photocatalysts, and indeed demonstrates a significant increase (from 6.8- to 128-fold) in CO production rate compared with those of out-plane ZIS@In2 O3 and out-plane In2 O3 -HZIScalcined heterostructures. Density Functional Theory simulation reveals that whereas the out-plane heterostructure has a much smaller ∆q of 0.2-0.25 e, the in-plane heterostructure with "zero distance contact" has an optimal ∆q of 1.05 e between In2 O3 and HZIS that induces remarkable charge redistribution on the in-plane heterojunction interface and creates local electric field confined within the ultrathin layer. The charge redistribution efficiently directs the charge-carrier separation in S-scheme photocatalytic system and endows long-lifetime carrier to CRR active HZIS. The findings demonstrate the strong versatility of engineering atomic-level heterojunctions for efficient catalysts design.
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Affiliation(s)
- Lin Zhao
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Bixia Yang
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Guoxin Zhuang
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Yonglin Wen
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Tingshi Zhang
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Mingxiong Lin
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Zanyong Zhuang
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
| | - Yan Yu
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technologies, Fuzhou University, Fuzhou, 350108, China
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14
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Wang H, Jiang S, Hao Z, Xu X, Pei M, Guo J, Wang Q, Li Y, Chen J, Xu J, Wang X, Wang J, Shi Y, Li Y. Molecular-Layer-Defined Asymmetric Schottky Contacts in Organic Planar Diodes for Self-Powered Optoelectronic Synapses. J Phys Chem Lett 2022; 13:2338-2347. [PMID: 35254069 DOI: 10.1021/acs.jpclett.2c00176] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Optoelectronic synapses have been utilized as neuromorphic vision sensors for image preprocessing in artificial visual systems. Self-powered optoelectronic synapses, which can directly convert optical power into electrical power, are promising for practical applications. The Schottky junction tends to be a promising candidate as the energy source for electrical operations. However, fully utilizing the potential of Schottky barriers is still challenging. Herein, organic self-powered optoelectronic synapses with planar diode architecture are fabricated, which can simultaneously sense and process ultraviolet (UV) signals. The photovoltaic operations are facilitated by the built-in potential originating from the molecular-layer-defined asymmetric Schottky contacts. Diverse synaptic behaviors under UV light stimulation without external power supplies are facilitated by the interfacial carrier-capturing layer, which emulates the membranes of synapses. Furthermore, retina-inspired image preprocessing functions are demonstrated on the basis of synaptic plasticity. Therefore, our devices provide the potential for the development of power-efficient and advanced artificial visual systems.
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Affiliation(s)
- Hengyuan Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Sai Jiang
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, P.R. China
| | - Ziqian Hao
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Xin Xu
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Jianhang Guo
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Qijing Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Yating Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Jiaming Chen
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Xinran Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Junzhuan Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
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15
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. Adv Sci (Weinh) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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16
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Zhong F, Ye J, He T, Zhang L, Wang Z, Li Q, Han B, Wang P, Wu P, Yu Y, Guo J, Zhang Z, Peng M, Xu T, Ge X, Wang Y, Wang H, Zubair M, Zhou X, Gao P, Fan Z, Hu W. Substitutionally Doped MoSe 2 for High-Performance Electronics and Optoelectronics. Small 2021; 17:e2102855. [PMID: 34647416 DOI: 10.1002/smll.202102855] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/11/2021] [Indexed: 06/13/2023]
Abstract
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed experimentally and theoretically, and outstanding homojunction photodetectors and inverters are fabricated. MoSe2 p-n homojunction device with a low reverse current (300 pA) exhibits a high rectification ratio (104 ). The analysis of dark current reveals the domination of the Shockley-Read-Hall (SRH) and band-to-band tunneling (BTB) current. The homojunction photodetector exhibits a large open-circuit voltage (0.68 V) and short-circuit currents (1 µA), which is suitable for micro-solar cells. Furthermore, it possesses outstanding responsivity (0.28 A W-1 ), large external quantum efficiency (42%), and a high signal-to-noise ratio (≈107 ). Benefiting from the continuous energy band of homojunction, the response speed reaches up to 20 µs. Besides, the Ta-doped MoSe2 inverter exhibits a high voltage gain (34) and low power consumption (127 nW). This work lays a foundation for the practical application of 2D material devices.
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Affiliation(s)
- Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhenhan Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Muhammad Zubair
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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17
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Jiang Y, Wang R, Li X, Ma Z, Li L, Su J, Yan Y, Song X, Xia C. Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions. ACS Nano 2021; 15:14295-14304. [PMID: 34435493 DOI: 10.1021/acsnano.1c02830] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult to balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) based on the WSe2/MoS2/WSe2 double vdWHs, where the photovoltage that originated from one vdWH modulates the optoelectronic characteristics of another vdWH. The proposed photodiode exhibits an excellent self-powered ability with a high responsivity of 715 mA·W-1 and fast response time of 45 μs. This work demonstrates an efficient method that optimizes the photoelectric performance of vdWH by introducing the photovoltaic field effect.
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Affiliation(s)
- Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Ruiqi Wang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Zinan Ma
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Lin Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Jian Su
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Yong Yan
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, 453007, China
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Li C, Zhu J, Du W, Huang Y, Xu H, Zhai Z, Zou G. The Photodetectors Based on Lateral Monolayer MoS 2/WS 2 Heterojunctions. Nanoscale Res Lett 2021; 16:123. [PMID: 34331611 PMCID: PMC8325733 DOI: 10.1186/s11671-021-03581-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Accepted: 07/21/2021] [Indexed: 06/13/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.
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Affiliation(s)
- Caihong Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Juntong Zhu
- the College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Wen Du
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Yixuan Huang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Hao Xu
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
- the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Zhengang Zhai
- the 36th Research Institute of China Electronics Technology Group Corporation, Jiaxing, 314033, People's Republic of China
| | - Guifu Zou
- the College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China.
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20
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She Y, Wu Z, You S, Du Q, Chu X, Niu L, Ding C, Zhang K, Zhang L, Huang S. Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS 2/Bi 2Se 3 Heterojunctions Based on Vapor Growth. ACS Appl Mater Interfaces 2021; 13:15518-15524. [PMID: 33769777 DOI: 10.1021/acsami.1c00377] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS2/Bi2Se3 vertical heterojunctions were successfully modulated. High-quality WS2/Bi2Se3 vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS2/Bi2Se3 vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.
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Affiliation(s)
- Yihong She
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Zhen Wu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Shengdong You
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Quan Du
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Xiaohong Chu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Lijuan Niu
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Changchun Ding
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Kenan Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Shaoming Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
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