Fano-Type Wavelength-Dependent Asymmetric Raman Line Shapes from MoS2 Nanoflakes

Effect of dimensionality on the excitation wavelength dependence of the Fano-Raman line-shape: a brief review

The already existing heterogeneity in nanomaterials makes it an intriguing yet complex system to study size effect vis-à-vis other external perturbations and thereby local modifications at the nanoscale, thus demanding an improved tool and analysis for the choice of study. The analysis of existential subtle perturbations and interactions in a wide class of materials using Raman spectromicroscopy has proved to be of utmost importance, and various phenomena such as quantum confinement and its interplay with Fano resonance have already been investigated in nanomaterials, including the role of various perturbations such as temperature, pressure, doping, bias, and excitation wavelength on Raman spectral line shape parameters. Amongst different perturbations that cause a change in the spectral profile of Fano resonance, the gray area of wavelength dependence of Fano Raman line shape profiles has been least analysed in the literature. Moreover, the true signature of Fano resonance in nanoscaled systems, which is the wavelength dependence of Fano interaction, remains the least discussed. This review summarises the wavelength dependent correlation of Fano resonance and its effect on the Raman spectral line-shape parameters in some bulk materials, nanomaterials, and molecular systems involving heavily doped p-type crystalline silicon, 2-D MoS2, graphene, WS2, single walled carbon nanotubes, etc. A brief overview of Fano resonance in metamaterials and photonic systems is also provided.

Fano-type discrete-continuum interaction in perovskites and its manifestation in Raman spectral line shapes

Fano resonance is one of the most significant physical phenomena that correlates microscopic processes with macroscopic manifestations for experimental observations using different spectroscopic techniques. Owing to its importance, a focused study is required to clearly understand the origin of certain modifications in spectral behaviour, the nature of which is different for different materials. This means that a careful understanding of Fano interactions can enhance the understanding of several technologically important materials, including perovskites, which are also important in the area of energy storage and conversion. In semiconductors and nano materials (including 2-D materials), Fano interactions occur due to the intervalence or interconduction band transitions. However, in perovskites, Fano interactions are dominated by the interaction between polar phonons or excitons with electronic continuum. Raman spectroscopy, being a sensitive and non-destructive tool, detects subtle scale phenomena, such as Fano interactions, by analysing the Raman line shape. Herein, different dimensions associated with the identification and thereafter the origin of the Fano resonance in perovskites, which are used in energy related areas, have been highlighted using Raman scattering.

Coexistence of Electrochromism and Bipolar Nonvolatile Memory in a Single Viologen

Viologens are fascinating redox-active organic compounds that have been widely explored in electrochromic devices (ECDs). However, the combination of electrochromic and resistive random-access memory in a single viologen remains unexplored. We report the coexistence of bistate electrochromic and single-resistor (1R) memory functions in a novel viologen. A high-performance electrochromic function is achieved by combining viologen (BzV2+2PF6) with polythiophene (P3HT), enabling a "push-pull" electronic effect due to the efficient intermolecular charge transfer in response to an applied bias. The ECDs show high coloration efficiency (ca. 1150 ± 10 cm2 C-1), subsecond switching time, good cycle stability (>103 switching cycles), and low-bias operation (±1.5 V). The ECDs require low power for switching the color states (55 μW cm-2 for magenta and 141 μW cm-2 for blue color). The random-access memory devices (p+2-Si/BzV2+2PF6/Al) exhibit distinct low and high resistive states with an ON/OFF ratio of ∼103, bipolar and nonvolatile characteristics that manifest good performances, and "Write"-"Read"-"Erase" (WRE) functions. The charge conduction mechanism of the RRAM device is elucidated by the Poole-Frenkel model where SET and RESET states arise at a low transition voltage (VT = ±1.7 V). Device statistics and performance parameters for both electrochromic and memory devices are compared with the literature data. Our findings on electrochromism and nonvolatile memory originated in the same viologen could boost the development of multifunctional, smart, wearable, flexible, and low-cost optoelectronic devices.

Tuning the electron-phonon interaction via exploring the interrelation between Urbach energy and fano-type asymmetric raman line shape in GO-hBN nanocomposites

Hexagonal boron nitride (hBN), having an in-plane hexagonal structure in the sp2arrangement of atoms, proclaims structural similarity with graphene with only a small lattice mismatch. Despite having nearly identical atomic arrangements and exhibiting almost identical properties, the electronic structures of the two materials are fundamentally different. Considering the aforementioned condition, a new hybrid material with enhanced properties can be evolved by combining both materials. This experiment involves liquid phase exfoliation of hBN and two-dimensional nanocomposites of GO-hBN with varying hBN and graphene oxide (GO) ratios. The optical and vibrational studies conducted using UV-vis absorption and Raman spectroscopic analysis report the tuning of electron-phonon interaction (EPI) in the GO-hBN nanocomposite as a function of GO content (%). This interaction depends on disorder-induced electronic and vibrational modifications addressed by Urbach energy (Eu) and asymmetry parameter (q), respectively. The EPI contribution to the induced disorders estimated from UV-vis absorption spectra is represented as EPI strength (Ee-p) and its impact observed in Raman phonon modes is quantified as an asymmetry parameter (q). The inverse of the asymmetry parameter is related toEe-p, asEe-p∼ 1/|q|. Here in this article, a linear relationship has been established betweenEuand the proportional parameter (k), wherekis determined as the ratio of the intensity of specific Raman mode (I) andq2, explaining the disorders' effect on Raman line shape. Thus a correlation between Urbach energy and the asymmetry parameter of Raman mode confirms the tuning of EPI with GO content (%) in GO-hBN nanocomposite.

Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering

It is always interesting to understand how the interplay between two perturbations, affects any physical process and gets manifested in a semiconductor. Temperature- and wavelength-dependent Raman Spectromicroscopy was performed on heavily-doped Si to reveal an unusual anti-anharmonic effect. Additionally, the energy dispersive behaviour of Fano coupling strength was also studied and its possible interrelation with the observed anti-anharmonic effect was explored. A systematic study revealed that at the different excitation wavelengths, the strength of the Fano interaction was different, where the involved electron-phonon (Fano-Fano-interferon) bound states were counted together with different energies. By understanding how the interplay manifests in terms of the Raman line shape, a method to calculate the Fano-interferon dissociation energy was developed. The slope of the Raman linewidth at different excitation wavelengths with temperature showed a negative temperature coefficient and sign reversal on decreasing the doping concentration. A wavelength-dependent empirical relation is proposed to calculate the required thermal energy, required to dissociate the electron-phonon bound state.