Thin-film copper indium gallium selenide solar cell based on low-temperature all-printing process

An ITO-Free Kesterite Solar Cell

Photovoltaic thin film solar cells based on kesterite Cu2 ZnSn(S, Se)4 (CZTSSe) have reached 13.8% sunlight-to-electricity conversion efficiency. However, this efficiency is still far from the Shockley-Queisser radiative limit and is hindered by the significant deficit in open circuit voltage (VOC ). The presence of high-density interface states between the absorber layer and buffer or window layer leads to the recombination of photogenerated carriers, thereby reducing effective carrier collection. To tackle this issue, a new window structure ZnO/AgNW/ZnO/AgNW (ZAZA) comprising layers of ZnO and silver nanowires (AgNWs) is proposed. This structure offers a simple and low-damage processing method, resulting in improved optoelectronic properties and junction quality. The ZAZA-based devices exhibit enhanced VOC due to the higher built-in voltage (Vbi ) and reduced interface recombination compared to the usual indium tin oxide (ITO) based structures. Additionally, improved carrier collection is demonstrated as a result of the shortened collection paths and the more uniform carrier lifetime distribution. These advances enable the fabrication of the first ITO-free CZTSSe solar cells with over 10% efficiency without an anti-reflective coating.

Towards All-Non-Vacuum-Processed Photovoltaic Systems: A Water-Based Screen-Printed Cu(In,Ga)Se2 Photoabsorber with a 6.6% Efficiency

During the last few decades, major advances have been made in photovoltaic systems based on Cu(In,Ga)Se₂ chalcopyrite. However, the most efficient photovoltaic cells are processed under high-energy-demanding vacuum conditions. To lower the costs and facilitate high-throughput production, printing/coating processes are proving to be effective solutions. This work combined printing, coating, and chemical bath deposition processes of photoabsorber, buffer, and transparent conductive layers for the development of solution-processed photovoltaic systems. Using a sustainable approach, all inks were formulated using water and ethanol as solvents. Screen printing of the photoabsorber on fluorine-doped tin-oxide-coated glass followed by selenization, chemical bath deposition of the cadmium sulfide buffer, and final sputtering of the intrinsic zinc oxide and aluminum-doped zinc oxide top conductive layers delivered a 6.6% maximum efficiency solar cell, a record for screen-printed Cu(In,Ga)Se₂ solar cells. On the other hand, the all-non-vacuum-processed device with spray-coated intrinsic zinc-oxide- and tin-doped indium oxide top conductive layers delivered a 2.2% efficiency. The given approaches represent relevant steps towards the fabrication of sustainable and efficient Cu(In,Ga)Se₂ solar cells.

Draw-spun, photonically annealed Ag fibers as alternative electrodes for flexible CIGS solar cells

We explore the feasibility of Ag fiber meshes as electron transport layer for high-efficiency flexible Cu(In,Ga)Se₂ (CIGS) solar cells. Woven meshes of Ag fibers after UV illumination and millisecond flash-lamp treatment results in a sheet resistance of 17 Ω/sq and a visible transmittance above 85%. Conductive Ag meshes are integrated into flexible CIGS cells as transparent conductive electrode (TCE) alone or together with layers of Al-doped ZnO (AZO) with various thickness of 0…900 nm. The Ag mesh alone is not able to function as a current collector. If used together with a thin AZO layer (50 nm), the Ag mesh markedly improves the fill factor and cell efficiency, in spite of the adverse mesh shadowing. When Ag mesh is combined with thicker (200 nm or 900 nm) AZO layers, no improvements in photovoltaic parameters are obtained. When comparing a hybrid TCE consisting of 50 nm AZO and Ag fiber mesh with a thick 900 nm reference AZO device, an improved charge carrier collection in the near-infrared range is observed. Regardless of the AZO thickness, the presence of Ag mesh slows down cell degradation upon mechanical tensile stress, which could be interesting for implementation into flexible thin film CIGS modules.

The comprehensive effects of visible light irradiation on silver nanowire transparent electrode

The silver nanowire (AgNW) transparent electrode is one of the promising components for flexible electronics due to its high electrical and thermal conductivity, optical transparency and flexibility. However, the application of the AgNW electrode with an improved performance is generally limited by its poor long-term stability. As the name suggests, the transparent electrode is usually exposed to visible light in various applications. Unlike other electrode materials, AgNWs show unique and complicated behavior under long-term visible light illumination. In this study, the comprehensive effect of visible light irradiation on the AgNW transparent electrode is initially investigated in detail. Light irradiation induces the migration of silver to enhance the nanowire contacts while also leading to the generation and growth of particles and diameter loss in the nanowire. Light irradiation accelerates the sulfidation and oxidation of the AgNWs as well, resulting in the emergence of degradation products on the nanowire surface. All these effects influence the sheet resistance of the AgNW electrode during light illumination. The light-induced change of sheet resistance also relates to the nanowire concentration due to the sensitivity of the wire-wire contact resistance near the percolation threshold. It is believed that this work will be a valuable reference for the design, processing and application of transparent electrodes used in numerous optoelectronic devices.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

All-Nonvacuum-Processed CIGS Solar Cells Using Scalable Ag NWs/AZO-Based Transparent Electrodes

With record cell efficiency of 21.7%, CIGS solar cells have demonstrated to be a very promising photovoltaic (PV) technology. However, their market penetration has been limited due to the inherent high cost of the cells. In this work, to lower the cost of CIGS solar cells, all nonvacuum-processed CIGS solar cells were designed and developed. CIGS absorber was prepared by the annealing of electrodeposited metallic layers in a chalcogen atmosphere. Nonvacuum-deposited Ag nanowires (NWs)/AZO transparent electrodes (TEs) with good transmittance (92.0% at 550 nm) and high conductivity (sheet resistance of 20 Ω/□) were used to replace the vacuum-sputtered window layer. Additional thermal treatment after device preparation was conducted at 220 °C for a few of minutes to improve both the value and the uniformity of the efficiency of CIGS pixel cell on 5 × 5 cm substrate. The best performance of the all-nonvacuum-fabricated CIGS solar cells showed an efficiency of 14.05% with Jsc of 34.82 mA/cm(2), Voc of 0.58 V, and FF of 69.60%, respectively, which is comparable with the efficiency of 14.45% of a reference cell using a sputtered window layer.

Silver Nanowires Binding with Sputtered ZnO to Fabricate Highly Conductive and Thermally Stable Transparent Electrode for Solar Cell Applications

Silver nanowire (AgNW) film has been demonstrated as excellent and low cost transparent electrode in organic solar cells as an alternative to replace scarce and expensive indium tin oxide (ITO). However, the low contact area and weak adhesion with low-lying surface as well as junction resistance between nanowires have limited the applications of AgNW film to thin film solar cells. To resolve this problem, we fabricated AgNW film as transparent conductive electrode (TCE) by binding with a thin layer of sputtered ZnO (40 nm) which not only increased contact area with low-lying surface in thin film solar cell but also improved conductivity by connecting AgNWs at the junction. The TCE thus fabricated exhibited transparency and sheet resistance of 92% and 20Ω/□, respectively. Conductive atomic force microscopy (C-AFM) study revealed the enhancement of current collection vertically and laterally through AgNWs after coating with ZnO thin film. The CuInGaSe2 solar cell with TCE of our AgNW(ZnO) demonstrated the maximum power conversion efficiency of 13.5% with improved parameters in comparison to solar cell fabricated with conventional ITO as TCE.

Highly Reliable Silver Nanowire Transparent Electrode Employing Selectively Patterned Barrier Shaped by Self-Masked Photolithography

The transparent electrode based on silver nanowire (AgNW) networks is one promising alternative of indium tin oxide film in particular for advanced flexible and printable electronics. However, the widespread application of AgNW electrode is hindered by its poor long-term reliability. Although the reliability can be improved by applying traditional overcoating layer or the core-shell structure, the transmittance or conductivity is inevitably undermined. In this paper, a novel patterned barrier of photoresist in situ assembled on the nanowire surface realized the reliability enhancement by simply employing AgNWs themselves as the mask in the photolithography process. The patterned barrier selectively covered the nanowires, while keeping the high transmittance and conductivity unchanged and improving the adhesion of AgNW networks on substrate. After 720 h storage in 85 °C/85% relative humidity (RH) environment, the resistance of electrode with patterned barrier only increased by 0.72 times. This study proposes a new way, i.e., the in situ patterned barrier containing light-sensitive substance, to selectively protect AgNW networks, which can be expanded to various metallic networks including nanowires, nanorods, nanocables, electrospun nanofibers, and so on.