1
|
Si L, Wallerberger M, Smolyanyuk A, di Cataldo S, Tomczak JM, Held K. Pb 10-xCu x(PO 4) 6O: a Mott or charge transfer insulator in need of further doping for (super)conductivity. J Phys Condens Matter 2023; 36:065601. [PMID: 37875139 DOI: 10.1088/1361-648x/ad0673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Accepted: 10/24/2023] [Indexed: 10/26/2023]
Abstract
We briefly review the status quo of research on the putative superconductor Pb9Cu(PO4)6O also known as LK-99. Further, we provideab initioderived tight-binding parameters for a two- and five-band model, and solve these in dynamical-mean-field theory. The interaction-to-bandwidth ratio makes LK-99 a Mott or charge transfer insulator. Electron or hole doping (which is different from substituting Pb by Cu and thus differs from LK-99) is required to make it metallic and potentially superconducting.
Collapse
Affiliation(s)
- Liang Si
- School of Physics, Northwest University, Xi'an 710127, People's Republic of China
- Institute of Solid State Physics, TU Wien, 1040 Wien, Vienna, Austria
| | | | - Andriy Smolyanyuk
- Institute of Solid State Physics, TU Wien, 1040 Wien, Vienna, Austria
| | - Simone di Cataldo
- Institute of Solid State Physics, TU Wien, 1040 Wien, Vienna, Austria
| | - Jan M Tomczak
- Institute of Solid State Physics, TU Wien, 1040 Wien, Vienna, Austria
- Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom
| | - Karsten Held
- Institute of Solid State Physics, TU Wien, 1040 Wien, Vienna, Austria
| |
Collapse
|
2
|
Kitatani M, Si L, Worm P, Tomczak JM, Arita R, Held K. Optimizing Superconductivity: From Cuprates via Nickelates to Palladates. Phys Rev Lett 2023; 130:166002. [PMID: 37154662 DOI: 10.1103/physrevlett.130.166002] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 02/28/2023] [Indexed: 05/10/2023]
Abstract
Motivated by cuprate and nickelate superconductors, we perform a comprehensive study of the superconducting instability in the single-band Hubbard model. We calculate the spectrum and superconducting transition temperature T_{c} as a function of filling and Coulomb interaction for a range of hopping parameters, using the dynamical vertex approximation. We find the sweet spot for high T_{c} to be at intermediate coupling, moderate Fermi surface warping, and low hole doping. Combining these results with first principles calculations, neither nickelates nor cuprates are close to this optimum within the single-band description. Instead, we identify some palladates, notably RbSr_{2}PdO_{3} and A_{2}^{'}PdO_{2}Cl_{2} (A^{'}=Ba_{0.5}La_{0.5}), to be virtually optimal, while others, such as NdPdO_{2}, are too weakly correlated.
Collapse
Affiliation(s)
- Motoharu Kitatani
- Department of Material Science, University of Hyogo, Ako, Hyogo 678-1297, Japan
- RIKEN Center for Emergent Matter Sciences (CEMS), Wako, Saitama 351-0198, Japan
| | - Liang Si
- School of Physics, Northwest University, Xi'an 710127, China
- Institute of Solid State Physics, TU Wien, 1040 Vienna, Austria
| | - Paul Worm
- Institute of Solid State Physics, TU Wien, 1040 Vienna, Austria
| | - Jan M Tomczak
- Institute of Solid State Physics, TU Wien, 1040 Vienna, Austria
- Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom
| | - Ryotaro Arita
- RIKEN Center for Emergent Matter Sciences (CEMS), Wako, Saitama 351-0198, Japan
- Research Center for Advanced Science and Technology, University of Tokyo 4-6-1, Komaba, Meguro-ku, Tokyo 153-8904, Japan
| | - Karsten Held
- Institute of Solid State Physics, TU Wien, 1040 Vienna, Austria
| |
Collapse
|
3
|
Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. Adv Mater 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
Collapse
Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
| |
Collapse
|
4
|
Cao G, Weng Y, Yao X, Ward TZ, Gai Z, Mandrus D, Dong S. Effect of Mn doping and charge transfer on LaTi 1-xMn xO 3. J Phys Condens Matter 2022; 35:055601. [PMID: 36410040 DOI: 10.1088/1361-648x/aca4b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2022] [Accepted: 11/21/2022] [Indexed: 06/16/2023]
Abstract
We report the magnetic and electronic transport properties of Mn-doped LaTi1-xMnxO3(x= 0, 0.1, 0.3, 0.5) as a function of temperature and an applied magnetic field. It was found that the Mn-doped samples show a magnetic transition which is not present in the parent LaTiO3. The Mn-doped samples showed fluctuations in magnetization at low fields below their Néel transition temperature indicating electronic phase separation in the material. Increased Mn content in the sample strengthens the ferromagnetic-like moment while maintaining G-type antiferromagnetic phase by charge transfer from Mn to Ti and influencing orbital ordering of the Ti3+t2gorbitals. The results are discussed in parallel with transport and bulk magnetization measurements detailing the electronic behavior. An additional context for the mechanism is supported by first-principles density-function theory calculations.
Collapse
Affiliation(s)
- Guixin Cao
- Materials Genome Institute, Shanghai University, Shanghai 200444, People's Republic of China
| | - Yakui Weng
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Xinyu Yao
- Materials Genome Institute, Shanghai University, Shanghai 200444, People's Republic of China
| | - T Zac Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37830, United States of America
| | - David Mandrus
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Shuai Dong
- School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| |
Collapse
|
5
|
Zhang H, Yan C, Ge Z, Weinert M, Li L. Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe 2 Lateral Heterostructure. J Phys Chem Lett 2022; 13:10713-10721. [PMID: 36367815 DOI: 10.1021/acs.jpclett.2c02546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe2 by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x2, indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal-Mott insulator junction and the high tunability of a Mott insulator by strain.
Collapse
Affiliation(s)
- Huimin Zhang
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China
| | - Chenhui Yan
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
| | - Zhuozhi Ge
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
| | - Michael Weinert
- Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53201, United States
| | - Lian Li
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
| |
Collapse
|
6
|
Kim J, Kim Y, Mun J, Choi W, Chang Y, Kim JR, Gil B, Lee JH, Hahn S, Kim H, Chang SH, Lee GD, Kim M, Kim C, Noh TW. Defect Engineering in A 2 BO 4 Thin Films via Surface-Reconstructed LaSrAlO 4 Substrates. Small Methods 2022; 6:e2200880. [PMID: 36250995 DOI: 10.1002/smtd.202200880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
Ruddlesden-Popper oxides (A2 BO4 ) have attracted significant attention regarding their potential application in novel electronic and energy devices. However, practical uses of A2 BO4 thin films have been limited by extended defects such as out-of-phase boundaries (OPBs). OPBs disrupt the layered structure of A2 BO4 , which restricts functionality. OPBs are ubiquitous in A2 BO4 thin films but inhomogeneous interfaces make them difficult to suppress. Here, OPBs in A2 BO4 thin films are suppressed using a novel method to control the substrate surface termination. To demonstrate the technique, epitaxial thin films of cuprate superconductor La2- x Srx CuO4 (x = 0.15) are grown on surface-reconstructed LaSrAlO4 substrates, which are terminated with self-limited perovskite double layers. To date, La2- x Srx CuO4 thin films are grown on LaSrAlO4 substrates with mixed-termination and exhibit multiple interfacial structures resulting in many OPBs. In contrast, La2- x Srx CuO4 thin films grown on surface-reconstructed LaSrAlO4 substrates energetically favor only one interfacial structure, thus inhibiting OPB formation. OPB-suppressed La2- x Srx CuO4 thin films exhibit significantly enhanced superconducting properties compared with OPB-containing La2- x Srx CuO4 thin films. Defect engineering in A2 BO4 thin films will allow for the elimination of various types of defects in other complex oxides and facilitate next-generation quantum device applications.
Collapse
Affiliation(s)
- Jinkwon Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Youngdo Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Junsik Mun
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woojin Choi
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yunyeong Chang
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byeongjun Gil
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jong Hwa Lee
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sungsoo Hahn
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hongjoon Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seo Hyoung Chang
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Gun-Do Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| |
Collapse
|
7
|
Ong BL, Jayaraman K, Diao C, Whitcher TJ, Jain A, Hung H, Breese MBH, Tok ES, Rusydi A. Anomalous Ferromagnetism of quasiparticle doped holes in cuprate heterostructures revealed using resonant soft X-ray magnetic scattering. Nat Commun 2022; 13:4639. [PMID: 35941141 PMCID: PMC9360448 DOI: 10.1038/s41467-022-31885-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Accepted: 07/04/2022] [Indexed: 11/09/2022] Open
Abstract
We report strong ferromagnetism of quasiparticle doped holes both within the ab-plane and along the c-axis of Cu-O planes in low-dimensional Au/d-La1.8Ba0.2CuO4/LaAlO3(001) heterostructures (d = 4, 8 and 12 unit-cells) using resonant soft X-ray and magnetic scattering together with X-ray magnetic circular dichroism. Interestingly, ferromagnetism is stronger at a hole doped peak and at an upper Hubbard band of O with spin-polarization degree as high as 40%, revealing strong ferromagnetism of Mottness. For in-ab-plane spin-polarizations, the spin of doped holes in O2p-Cu3d-O2p is a triplet state yielding strong ferromagnetism. For out-of-ab-plane spin-polarization, while the spins of doped holes in both O2p-O2p and Cu3d-Cu3d are triplet states, the spin of doped holes in Cu3d-O2p is a singlet state yielding ferrimagnetism. A ferromagnetic-(002) Bragg-peak of the doped holes is observed and enhanced as a function of d revealing strong ferromagnetism coupling between Cu-O layers along the c-axis.
Collapse
Affiliation(s)
- B L Ong
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - K Jayaraman
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - C Diao
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - T J Whitcher
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - A Jain
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - H Hung
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - M B H Breese
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - E S Tok
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - A Rusydi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore. .,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore. .,Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore. .,NUS Graduate School for Integrative Sciences and Engineering, Singapore, 117456, Singapore.
| |
Collapse
|
8
|
Wang Q, von Arx K, Mazzone DG, Mustafi S, Horio M, Küspert J, Choi J, Bucher D, Wo H, Zhao J, Zhang W, Asmara TC, Sassa Y, Månsson M, Christensen NB, Janoschek M, Kurosawa T, Momono N, Oda M, Fischer MH, Schmitt T, Chang J. Uniaxial pressure induced stripe order rotation in La1.88Sr0.12CuO4. Nat Commun 2022; 13. [PMID: 35379813 PMCID: PMC8979978 DOI: 10.1038/s41467-022-29465-4] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2021] [Accepted: 03/16/2022] [Indexed: 11/08/2022] Open
Abstract
AbstractStatic stripe order is detrimental to superconductivity. Yet, it has been proposed that transverse stripe fluctuations may enhance the inter-stripe Josephson coupling and thus promote superconductivity. Direct experimental studies of stripe dynamics, however, remain difficult. From a strong-coupling perspective, transverse stripe fluctuations are realized in the form of dynamic “kinks”—sideways shifting stripe sections. Here, we show how modest uniaxial pressure tuning reorganizes directional kink alignment. Our starting point is La1.88Sr0.12CuO4 where transverse kink ordering results in a rotation of stripe order away from the crystal axis. Application of mild uniaxial pressure changes the ordering pattern and pins the stripe order to the crystal axis. This reordering occurs at a much weaker pressure than that to detwin the stripe domains and suggests a rather weak transverse stripe stiffness. Weak spatial stiffness and transverse quantum fluctuations are likely key prerequisites for stripes to coexist with superconductivity.
Collapse
|
9
|
Katase T, He X, Tadano T, Tomczak JM, Onozato T, Ide K, Feng B, Tohei T, Hiramatsu H, Ohta H, Ikuhara Y, Hosono H, Kamiya T. Breaking of Thermopower-Conductivity Trade-Off in LaTiO 3 Film around Mott Insulator to Metal Transition. Adv Sci (Weinh) 2021; 8:e2102097. [PMID: 34672114 PMCID: PMC8655177 DOI: 10.1002/advs.202102097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Revised: 08/13/2021] [Indexed: 06/13/2023]
Abstract
Introducing artificial strain in epitaxial thin films is an effective strategy to alter electronic structures of transition metal oxides (TMOs) and to induce novel phenomena and functionalities not realized in bulk crystals. This study reports a breaking of the conventional trade-off relation in thermopower (S)-conductivity (σ) and demonstrates a 2 orders of magnitude enhancement of power factor (PF) in compressively strained LaTiO3 (LTO) films. By varying substrates and reducing film thickness down to 4 nm, the out-of-plane to the in-plane lattice parameter ratio is controlled from 0.992 (tensile strain) to 1.034 (compressive strain). This tuning induces the electronic structure change from a Mott insulator to a metal and leads to a 103 -fold increase in σ up to 2920 S cm-1 . Concomitantly, the sign of S inverts from positive to negative, and both σ and S increase and break the trade-off relation between them in the n-type region. As a result, the PF (=S2 σ) is significantly enhanced to 300 µW m- 1 K-2 , which is 102 times larger than that of bulk LTO. Present results propose epitaxial strain as a means to finely tune strongly correlated TMOs close to their Mott transition, and thus to harness the hidden large thermoelectric PF.
Collapse
Affiliation(s)
- Takayoshi Katase
- Laboratory for Materials and StructuresTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
- PRESTOJapan Science and Technology Agency7 GobanchoChiyoda‐kuTokyo102‐0076Japan
| | - Xinyi He
- Laboratory for Materials and StructuresTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| | - Terumasa Tadano
- Research Center for Magnetic and Spintronic MaterialsNational Institute for Materials Science1‐2‐1 SengenTsukubaIbaraki305‐0047Japan
| | - Jan M. Tomczak
- Institute of Solid State PhysicsVienna University of TechnologyWiedner Hautptstrasse 8‐10, A‐1040 ViennaAustria
| | - Takaki Onozato
- Graduate School of Information Science and TechnologyHokkaido UniversityN14W9, Kita‐kuSapporo060‐0814Japan
| | - Keisuke Ide
- Laboratory for Materials and StructuresTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| | - Bin Feng
- Institute of Engineering InnovationThe University of Tokyo2‐11‐16 Yayoi, Bunkyo‐kuTokyo113‐8656Japan
| | - Tetsuya Tohei
- Graduate School of Engineering ScienceOsaka University1‐3 Machikaneyama‐choToyonakaOsaka560‐8531Japan
| | - Hidenori Hiramatsu
- Laboratory for Materials and StructuresTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| | - Hiromichi Ohta
- Research Institute for Electronic ScienceHokkaido UniversityN20W10, Kita‐kuSapporo001‐0020Japan
| | - Yuichi Ikuhara
- Institute of Engineering InnovationThe University of Tokyo2‐11‐16 Yayoi, Bunkyo‐kuTokyo113‐8656Japan
| | - Hideo Hosono
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| | - Toshio Kamiya
- Laboratory for Materials and StructuresTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| |
Collapse
|
10
|
Paris E, Tseng Y, Pärschke EM, Zhang W, Upton MH, Efimenko A, Rolfs K, McNally DE, Maurel L, Naamneh M, Caputo M, Strocov VN, Wang Z, Casa D, Schneider CW, Pomjakushina E, Wohlfeld K, Radovic M, Schmitt T. Strain engineering of the charge and spin-orbital interactions in Sr 2IrO 4. Proc Natl Acad Sci U S A 2020; 117:24764-70. [PMID: 32958669 DOI: 10.1073/pnas.2012043117] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022] Open
Abstract
Understanding the relationship between entangled degrees of freedom (DOF) is a central problem in correlated materials and the possibility to influence their balance is promising toward realizing novel functionalities. In Sr2IrO4, the interaction between spin–orbit coupling and electron correlations induces an exotic ground state with magnetotransport properties promising for antiferromagnetic spintronics applications. Moreover, the coupling between orbital and spin DOF renders the magnetic structure sensitive to the Ir–O bond environment. To date, a detailed understanding of the microscopic spin-lattice and electron–phonon interactions is still lacking. Here, we use strain engineering to perturb the local lattice environment and, by tracking the response of the low-energy elementary excitations, we unveil the response of the microscopic spin and charge interactions. In the high spin–orbit-coupled Sr2IrO4, the high sensitivity of the ground state to the details of the local lattice structure shows a large potential for the manipulation of the functional properties by inducing local lattice distortions. We use epitaxial strain to modify the Ir–O bond geometry in Sr2IrO4 and perform momentum-dependent resonant inelastic X-ray scattering (RIXS) at the metal and at the ligand sites to unveil the response of the low-energy elementary excitations. We observe that the pseudospin-wave dispersion for tensile-strained Sr2IrO4 films displays large softening along the [h,0] direction, while along the [h,h] direction it shows hardening. This evolution reveals a renormalization of the magnetic interactions caused by a strain-driven cross-over from anisotropic to isotropic interactions between the magnetic moments. Moreover, we detect dispersive electron–hole pair excitations which shift to lower (higher) energies upon compressive (tensile) strain, manifesting a reduction (increase) in the size of the charge gap. This behavior shows an intimate coupling between charge excitations and lattice distortions in Sr2IrO4, originating from the modified hopping elements between the t2g orbitals. Our work highlights the central role played by the lattice degrees of freedom in determining both the pseudospin and charge excitations of Sr2IrO4 and provides valuable information toward the control of the ground state of complex oxides in the presence of high spin–orbit coupling.
Collapse
|
11
|
Moretti Sala M, Salluzzo M, Minola M, De Luca GM, Dellea G, Srot V, Wang Y, van Aken PA, Le Tacon M, Keimer B, Dallera C, Braicovich L, Ghiringhelli G. Structural, Electronic and Magnetic Properties of a Few Nanometer-Thick Superconducting NdBa 2Cu 3O 7 Films. Nanomaterials (Basel) 2020; 10:E817. [PMID: 32344792 DOI: 10.3390/nano10040817] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Revised: 04/17/2020] [Accepted: 04/21/2020] [Indexed: 11/16/2022]
Abstract
Epitaxial films of high critical temperature (Tc) cuprate superconductors preserve their transport properties even when their thickness is reduced to a few nanometers. However, when approaching the single crystalline unit cell (u.c.) of thickness, Tc decreases and eventually, superconductivity is lost. Strain originating from the mismatch with the substrate, electronic reconstruction at the interface and alteration of the chemical composition and of doping can be the cause of such changes. Here, we use resonant inelastic x-ray scattering at the Cu L3 edge to study the crystal field and spin excitations of NdBa2Cu3O7−x ultrathin films grown on SrTiO3, comparing 1, 2 and 80 u.c.-thick samples. We find that even at extremely low thicknesses, the strength of the in-plane superexchange interaction is mostly preserved, with just a slight decrease in the 1 u.c. with respect to the 80 u.c.-thick sample. We also observe spectroscopic signatures for a decrease of the hole-doping at low thickness, consistent with the expansion of the c-axis lattice parameter and oxygen deficiency in the chains of the first unit cell, determined by high-resolution transmission microscopy and x-ray diffraction.
Collapse
|
12
|
Abstract
We present an overview of the microscopic theory of the Dzyaloshinskii–Moriya (DM) coupling in strongly correlated 3d compounds. Most attention in the paper centers around the derivation of the Dzyaloshinskii vector, its value, orientation, and sense (sign) under different types of the (super)exchange interaction and crystal field. We consider both the Moriya mechanism of the antisymmetric interaction and novel contributions, in particular, that of spin–orbital coupling on the intermediate ligand ions. We have predicted a novel magnetic phenomenon, weak ferrimagnetism in mixed weak ferromagnets with competing signs of Dzyaloshinskii vectors. We revisit a problem of the DM coupling for a single bond in cuprates specifying the local spin–orbital contributions to the Dzyaloshinskii vector focusing on the oxygen term. We predict a novel puzzling effect of the on-site staggered spin polarization to be a result of the on-site spin–orbital coupling and the cation-ligand spin density transfer. The intermediate ligand nuclear magnetic resonance (NMR) measurements are shown to be an effective tool to inspect the effects of the DM coupling in an external magnetic field. We predict the effect of a strong oxygen-weak antiferromagnetism in edge-shared CuO 2 chains due to uncompensated oxygen Dzyaloshinskii vectors. We revisit the effects of symmetric spin anisotropy directly induced by the DM coupling. A critical analysis will be given of different approaches to exchange-relativistic coupling based on the cluster and the DFT (density functional theory) based calculations. Theoretical results are applied to different classes of 3d compounds from conventional weak ferromagnets ( α -Fe 2 O 3 , FeBO 3 , FeF 3 , RFeO 3 , RCrO 3 , ...) to unconventional systems such as weak ferrimagnets (e.g., RFe 1 - x Cr x O 3 ), helimagnets (e.g., CsCuCl 3 ), and parent cuprates (La 2 CuO 4 , ...).
Collapse
|
13
|
Affiliation(s)
- QuanSheng Wu
- Institute of Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials MARVEL, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Alexey A. Soluyanov
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zurich, Switzerland
- Department of Physics, St. Petersburg State University, St. Petersburg, 199034 Russia
| | - Tomáš Bzdušek
- Department of Physics, McCullough Building, Stanford University, Stanford, CA 94305, USA
- Stanford Center for Topological Quantum Physics, Stanford University, Stanford, CA 94305, USA
| |
Collapse
|