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Kim HJ, Chong M, Rhee TG, Khim YG, Jung MH, Kim YM, Jeong HY, Choi BK, Chang YJ. Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth. Nano Converg 2023; 10:10. [PMID: 36806667 PMCID: PMC9941396 DOI: 10.1186/s40580-023-00359-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Accepted: 01/31/2023] [Indexed: 05/14/2023]
Abstract
In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques.
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Affiliation(s)
- Hyuk Jin Kim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Minsu Chong
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Tae Gyu Rhee
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea
| | - Yeong Gwang Khim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Byoung Ki Choi
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea.
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea.
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2
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Hafez MA, Zayed MK, Elsayed-Ali HE. Review: Geometric Interpretation of Reflection and Transmission RHEED Patterns. Micron 2022; 159:103286. [DOI: 10.1016/j.micron.2022.103286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Revised: 04/11/2022] [Accepted: 04/12/2022] [Indexed: 10/18/2022]
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3
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Fedorov VV, Dvoretckaia LN, Kirilenko DA, Mukhin IS, Dubrovskii VG. Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption. Nanotechnology 2021; 32:495601. [PMID: 34433149 DOI: 10.1088/1361-6528/ac20fe] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Accepted: 08/25/2021] [Indexed: 06/13/2023]
Abstract
Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (∼500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 °C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.
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Affiliation(s)
- V V Fedorov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, 195251 St. Petersburg, Russia
| | - L N Dvoretckaia
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - D A Kirilenko
- Ioffe Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
| | - I S Mukhin
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- School of Photonics, ITMO University, Kronverksky Prospekt 49, 197101 St. Petersburg, Russia
| | - V G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034, St. Petersburg, Russia
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4
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Jakob J, Schroth P, Feigl L, Al Humaidi M, Al Hassan A, Davtyan A, Hauck D, Pietsch U, Baumbach T. Correlating in situ RHEED and XRD to study growth dynamics of polytypism in nanowires. Nanoscale 2021; 13:13095-13107. [PMID: 34477793 DOI: 10.1039/d1nr02320a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Design of novel nanowire (NW) based semiconductor devices requires deep understanding and technological control of NW growth. Therefore, quantitative feedback over the structure evolution of the NW ensemble during growth is highly desirable. We analyse and compare the methodical potential of reflection high-energy electron diffraction (RHEED) and X-ray diffraction reciprocal space imaging (XRD) for in situ growth characterization during molecular-beam epitaxy (MBE). Simultaneously recorded in situ RHEED and in situ XRD intensities show strongly differing temporal behaviour and provide evidence of the highly complementary information value of both diffraction techniques. Exploiting the complementarity by a correlative data analysis presently offers the most comprehensive experimental access to the growth dynamics of statistical NW ensembles under standard MBE growth conditions. In particular, the combination of RHEED and XRD allows for translating quantitatively the time-resolved information into a height-resolved information on the crystalline structure without a priori assumptions on the growth model. Furthermore, we demonstrate, how careful analysis of in situ RHEED if supported by ex situ XRD and scanning electron microscopy (SEM), all usually available at conventional MBE laboratories, can also provide highly quantitative feedback on polytypism during growth allowing validation of current vapour-liquid-solid (VLS) growth models.
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Affiliation(s)
- Julian Jakob
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany.
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5
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Verma I, Salimian S, Zannier V, Heun S, Rossi F, Ercolani D, Beltram F, Sorba L. High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices. ACS Appl Nano Mater 2021; 4:5825-5833. [PMID: 34308268 PMCID: PMC8291043 DOI: 10.1021/acsanm.1c00734] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Accepted: 05/07/2021] [Indexed: 05/31/2023]
Abstract
High-quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize because of the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor systems are integrated. In this work, we optimize the morphology of free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems, optimized growth parameters, and the use of reflection high-energy electron diffraction (RHEED) to precisely orient the substrate for preferential growth are implemented to increase the lateral size of the 2D InSb NFs. Transmission electron microscopy (TEM) analysis of these NFs reveals defect-free zinc blend crystal structure, stoichiometric composition, and relaxed lattice parameters. The resulting NFs are large enough to fabricate Hall-bar contacts with suitable length-to-width ratio enabling precise electrical characterization. An electron mobility of ∼29 500 cm2/(V s) is measured, which is the highest value reported for free-standing 2D InSb nanostructures in literature. We envision the use of 2D InSb NFs for fabrication of advanced quantum devices.
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Affiliation(s)
- Isha Verma
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Sedighe Salimian
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Valentina Zannier
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Stefan Heun
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Francesca Rossi
- IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy
| | - Daniele Ercolani
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Fabio Beltram
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Lucia Sorba
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
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6
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Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy. Nanotechnology 2021; 32:155602. [PMID: 33429384 DOI: 10.1088/1361-6528/abda75] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. Although cubic zinc-blende (ZB) GaAs is a well-established material in microelectronics, the controlled growth of hexagonal wurtzite (WZ) GaAs has thus far not been achieved successfully. Specifically, the prospect of growing defect-free and gold catalyst-free wurtzite GaAs would pave the way towards integration on silicon substrate and new device applications. In this article, we present a method to select and maintain the WZ crystal phase in self-assisted NWs by molecular beam epitaxy. By choosing a specific regime where the NW growth process is a self-regulated system, the main experimental parameter to select the ZB or WZ phase is the V/III flux ratio. Using an analytical growth model, we show that the V/III flux ratio can be finely tuned by changing the As flux, thus driving the system toward a stationary regime where the wetting angle of the Ga droplet can be maintained in the range of values allowing the formation of pure WZ phase. The analysis of the in situ reflection high energy electron diffraction evolution, combined with high-resolution scanning transmission electron microscopy (TEM), dark field TEM, and photoluminescence all confirm the control of an extended pure WZ segment, more than a micrometer long, obtained by molecular beam epitaxy growth of self- assisted GaAs NWs with a V/III flux ratio of 4.0. This successful controlled growth of WZ GaAs suggests potential benefits for electronics and opto-electronics applications.
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Affiliation(s)
- T Dursap
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - M Vettori
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - C Botella
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - P Regreny
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Blanchard
- Université de Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622 Villeurbanne, France
| | - M Gendry
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Chauvin
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, INSA de Lyon, 7 Avenue Jean Capelle F-69621, Villeurbanne Cedex, France
| | - M Bugnet
- Université de Lyon, INSA de Lyon, Université Claude Bernard Lyon 1, MATEIS, UMR 5510 CNRS, Avenue Jean Capelle, F-69621 Villeurbanne, France
| | - A Danescu
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - J Penuelas
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
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7
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Koval OY, Fedorov VV, Bolshakov AD, Fedina SV, Kochetkov FM, Neplokh V, Sapunov GA, Dvoretckaia LN, Kirilenko DA, Shtrom IV, Islamova RM, Cirlin GE, Tchernycheva M, Serov AY, Mukhin IS. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane. Nanomaterials (Basel) 2020; 10:nano10112110. [PMID: 33114110 PMCID: PMC7690831 DOI: 10.3390/nano10112110] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Revised: 10/20/2020] [Accepted: 10/21/2020] [Indexed: 01/05/2023]
Abstract
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.
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Affiliation(s)
- Olga Yu. Koval
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Correspondence:
| | - Vladimir V. Fedorov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
| | - Alexey D. Bolshakov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- School of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia;
| | - Sergey V. Fedina
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Fedor M. Kochetkov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Vladimir Neplokh
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
| | - Georgiy A. Sapunov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Liliia N. Dvoretckaia
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Demid A. Kirilenko
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Igor V. Shtrom
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, Russia;
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - Regina M. Islamova
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - George E. Cirlin
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, Russia;
| | - Maria Tchernycheva
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris Sud, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau CEDEX, France;
| | - Alexey Yu. Serov
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - Ivan S. Mukhin
- School of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia;
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Fedorov VV, Bolshakov A, Sergaeva O, Neplokh V, Markina D, Bruyere S, Saerens G, Petrov MI, Grange R, Timofeeva M, Makarov SV, Mukhin IS. Gallium Phosphide Nanowires in a Free-Standing, Flexible, and Semitransparent Membrane for Large-Scale Infrared-to-Visible Light Conversion. ACS Nano 2020; 14:10624-10632. [PMID: 32806025 DOI: 10.1021/acsnano.0c04872] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Engineering of nonlinear optical response in nanostructures is one of the key topics in nanophotonics, as it allows for broad frequency conversion at the nanoscale. Nevertheless, the application of the developed designs is limited by either high cost of their manufacturing or low conversion efficiencies. This paper reports on the efficient second-harmonic generation in a free-standing GaP nanowire array encapsulated in a polymer membrane. Light coupling with optical resonances and field confinement in the nanowires together with high nonlinearity of GaP material yield a strong second-harmonic signal and efficient near-infrared (800-1200 nm) to visible upconversion. The fabricated nanowire-based membranes demonstrate high flexibility and semitransparency for the incident infrared radiation, allowing utilizing them for infrared imaging, which can be easily integrated into different optical schemes without disturbing the visualized beam.
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Affiliation(s)
- Vladimir V Fedorov
- Alferov University (formerly St. Petersburg Academic University), Khlopina 8/3, 194021, St. Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, 195251, St. Petersburg, Russia
| | - Alexey Bolshakov
- Alferov University (formerly St. Petersburg Academic University), Khlopina 8/3, 194021, St. Petersburg, Russia
| | - Olga Sergaeva
- ITMO University, Kronverkskij 49, 197101, St. Petersburg, Russia
| | - Vladimir Neplokh
- Alferov University (formerly St. Petersburg Academic University), Khlopina 8/3, 194021, St. Petersburg, Russia
| | - Daria Markina
- ITMO University, Kronverkskij 49, 197101, St. Petersburg, Russia
| | - Stephanie Bruyere
- Institut Jean Lamour, CNRS, Université de Lorraine, 54011 Nancy, France
| | - Grégoire Saerens
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
| | - Mihail I Petrov
- ITMO University, Kronverkskij 49, 197101, St. Petersburg, Russia
| | - Rachel Grange
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
| | - Maria Timofeeva
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, Auguste-Piccard Hof 1, 8093 Zurich, Switzerland
| | - Sergey V Makarov
- ITMO University, Kronverkskij 49, 197101, St. Petersburg, Russia
| | - Ivan S Mukhin
- Alferov University (formerly St. Petersburg Academic University), Khlopina 8/3, 194021, St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101, St. Petersburg, Russia
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9
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Dursap T, Vettori M, Danescu A, Botella C, Regreny P, Patriarche G, Gendry M, Penuelas J. Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram. Nanoscale Adv 2020; 2:2127-2134. [PMID: 36132505 PMCID: PMC9418245 DOI: 10.1039/d0na00273a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2019] [Accepted: 04/09/2020] [Indexed: 06/12/2023]
Abstract
It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux. In this work we present a method to control the wurtzite (WZ) or zinc-blende (ZB) structure in self-catalyzed GaAs NWs grown by molecular beam epitaxy, using in situ reflection high energy electron diffraction (RHEED) diagram analysis. Since the diffraction patterns of the ZB and WZ structures differ according to the azimuth [11̄0], it is possible to follow the evolution of the intensity of specific ZB and WZ diffraction spots during NW growth as a function of the growth parameters such as the Ga flux. By analyzing the evolution of the WZ and ZB spot intensities during NW growth with specific changes of the Ga flux, it is then possible to control the crystal structure of the NWs. ZB GaAs NWs with a controlled WZ segment have thus been realized. Using a semi-empirical model for the NW growth and our in situ RHEED measurements, the critical wetting angle of the Ga catalyst droplet for the structural transition is deduced.
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Affiliation(s)
- T Dursap
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - M Vettori
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - A Danescu
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - C Botella
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - P Regreny
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - G Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies 91120 Palaiseau France
| | - M Gendry
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - J Penuelas
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
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Jakob J, Schroth P, Feigl L, Hauck D, Pietsch U, Baumbach T. Quantitative analysis of time-resolved RHEED during growth of vertical nanowires. Nanoscale 2020; 12:5471-5482. [PMID: 32083629 DOI: 10.1039/c9nr09621c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We present an approach for quantitative evaluation of time-resolved reflection high-energy electron diffraction (RHEED) intensity patterns measured during the growth of vertical, free-standing nanowires (NWs). The approach considers shadowing due to attenuation by absorption and extinction within the individual nanowires and estimates the time dependence of its influence on the RHEED signal of the nanowire ensemble as a function of instrumental RHEED parameters and the growth dynamics averaged over the nanowire ensemble. The developed RHEED simulation model takes into account the nanowire structure evolution related to essential growth aspects, such as axial growth, radial growth with tapering and facet growth, as well as so-called parasitic intergrowth on the substrate. It also considers the influence of the NW density, which turns out to be a sensitive parameter for the time-dependent interpretation of the intensity patterns. Finally, the application potential is demonstrated by evaluating experimental data obtained during molecular beam epitaxy (MBE) of self-catalysed GaAs nanowires. We demonstrate, how electron shadowing enables a time-resolved analysis of the crystal structure evolution at the top part of the growing NWs. The approach offers direct access to study growth dynamics of polytypism in nanowire ensembles at the growth front region under standard growth conditions.
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Affiliation(s)
- Julian Jakob
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany.
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Maliakkal CB, Jacobsson D, Tornberg M, Persson AR, Johansson J, Wallenberg R, Dick KA. In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth. Nat Commun 2019; 10:4577. [PMID: 31594930 DOI: 10.1038/s41467-019-12437-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Accepted: 09/10/2019] [Indexed: 11/16/2022] Open
Abstract
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux. Semiconductor nanowires are promising materials for miniaturized devices, but a thorough understanding of their growth mechanism is necessary for controlled synthesis. Here, the authors use in situ spectroscopy and microscopy to measure the composition of the catalyst droplet as a function of different growth parameters during Au-seeded GaAs nanowire growth.
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Fedorov VV, Bolshakov AD, Kirilenko DA, Mozharov AM, Sitnikova AA, Sapunov GA, Dvoretckaia LN, Shtrom IV, Cirlin GE, Mukhin IS. Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy. CrystEngComm 2018. [DOI: 10.1039/c8ce00348c] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We demonstrate that the use of a GaN seeding layer prepared prior to the growth of epitaxial GaN on Si (111) can lead to the formation of oriented arrays of Y-shaped nanoislands and nanowires and affects the surface density of the nanostructures.
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Affiliation(s)
- V. V. Fedorov
- St. Petersburg Academic University
- St. Petersburg
- Russia
| | | | - D. A. Kirilenko
- ITMO University
- St. Petersburg
- Russia
- Ioffe Institute
- Saint Petersburg
| | | | | | - G. A. Sapunov
- St. Petersburg Academic University
- St. Petersburg
- Russia
| | | | - I. V. Shtrom
- Ioffe Institute
- Saint Petersburg
- Russia
- Institute for Analytical Instrumentation RAS
- St. Petersburg
| | - G. E. Cirlin
- St. Petersburg Academic University
- St. Petersburg
- Russia
- ITMO University
- St. Petersburg
| | - I. S. Mukhin
- St. Petersburg Academic University
- St. Petersburg
- Russia
- ITMO University
- St. Petersburg
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