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Shen D, Zhao B, Zhang Z, Zhang H, Yang X, Huang Z, Li B, Song R, Jin Y, Wu R, Li B, Li J, Duan X. Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2. ACS Nano 2022; 16:10623-10631. [PMID: 35735791 DOI: 10.1021/acsnano.2c02214] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe2) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe2 monolayer. The Fe-doped MoSe2 monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl3/Na2MoO4. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe2 monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe2 samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe2 field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.
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Affiliation(s)
- Dingyi Shen
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
- School of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Rong Song
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Yejun Jin
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bo Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
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Zhang SJ, Yan JM, Tang F, Wu J, Dong WQ, Zhang DW, Luo FS, Chen L, Fang Y, Zhang T, Chai Y, Zhao W, Wang X, Zheng RK. Colossal Magnetoresistance in Ti Lightly Doped Cr 2Se 3 Single Crystals with a Layered Structure. ACS Appl Mater Interfaces 2021; 13:58949-58955. [PMID: 34854300 DOI: 10.1021/acsami.1c18848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Stoichiometric Cr2Se3 single crystals are particular layer-structured antiferromagnets, which possess a noncollinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ∼14.3%), and poor metallic conductivity below the antiferromagnetic phase transition. Here, we report an interesting >16 000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly doped Cr2Se3 single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr2Se3 crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the Cr2Se3 crystal from a bad metal to a semiconductor with a gap of ∼15 meV but also induces a change in the magnetic anisotropy of the Cr2Se3 crystal from strong out-of-plane to weak in-plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr2Se3 with the CMR effect could be used as two-dimensional (2D) heterostructure building blocks to provide colossal negative MR in spintronic devices.
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Affiliation(s)
- Shu-Juan Zhang
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
- School of Materials and Mechanic & Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, China
| | - Jian-Min Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - F Tang
- Jiangsu Laboratory of Advanced Functional Materials and Department of Physics, Changshu Institute of Technology, Changshu 215500, China
| | - Jin Wu
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
| | - Wei-Qi Dong
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
| | - Dan-Wen Zhang
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
| | - Fu-Sheng Luo
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
| | - Lei Chen
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
| | - Y Fang
- Jiangsu Laboratory of Advanced Functional Materials and Department of Physics, Changshu Institute of Technology, Changshu 215500, China
| | - Tao Zhang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Weiyao Zhao
- Institute for Superconducting and Electronic Materials & ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Innovation Campus, University of Wollongong, North Wollongong, NSW 2500, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials & ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Innovation Campus, University of Wollongong, North Wollongong, NSW 2500, Australia
| | - Ren-Kui Zheng
- School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China
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Wong HF, Ng SM, Zhang W, Liu YK, Wong PKJ, Tang CS, Lam KK, Zhao XW, Meng ZG, Fei LF, Cheng WF, Nordheim DV, Wong WY, Wang ZR, Ploss B, Dai JY, Mak CL, Wee ATS, Leung CW. Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains. ACS Appl Mater Interfaces 2020; 12:56541-56548. [PMID: 33283518 DOI: 10.1021/acsami.0c14172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La0.66Sr0.33MnO3 (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.
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Affiliation(s)
- Hon Fai Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Sheung Mei Ng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Wen Zhang
- School of Electronics and Information and School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, Shaanxi 710072, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Yu Kuai Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Ping Kwan Johnny Wong
- School of Electronics and Information and School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, Shaanxi 710072, China
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Chi Sin Tang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Ka Kin Lam
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Xu Wen Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zhen Gong Meng
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lin Feng Fei
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Wang Fai Cheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Danny von Nordheim
- Department of SciTec, University of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07743 Jena, Germany
| | - Wai Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zong Rong Wang
- State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Bernd Ploss
- Department of SciTec, University of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07743 Jena, Germany
| | - Ji-Yan Dai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Chee Leung Mak
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Chi Wah Leung
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
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Mombrú D, Romero M, Faccio R, Tumelero MA, Mombrú AW. Extremely Large Magnetic-Field-Effects on the Impedance Response of TiO 2 Quantum Dots. Sci Rep 2019; 9:5322. [PMID: 30926939 PMCID: PMC6440945 DOI: 10.1038/s41598-019-41792-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2018] [Accepted: 03/14/2019] [Indexed: 11/18/2022] Open
Abstract
Here, we report large magnetoresistance and magnetocapacitance response of undoped TiO2 quantum dots weighting the contribution of both grain and grain boundaries by means of impedance spectroscopy. We also performed a complete characterization of the TiO2 quantum dots (~5 nm) prepared by sol-gel via water vapor diffusion method, using X-ray diffraction, small angle X-ray scattering, transmission electron microscopy and Raman spectroscopy. In addition, we showed a complete theoretical study on the electronic properties of TiO2 surface and subsurface oxygen and titanium vacancies to shed some light in their electronic and magnetic properties. Based in our study, we can conclude that the presence of defects, mainly at the grain boundary of these undoped TiO2 quantum dots, could be responsible for the large positive magnetoresistance (+1200%) and negative magnetocapacitance (-115%) responses at low applied magnetic fields (1.8 kOe) and room temperature.
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Affiliation(s)
- Dominique Mombrú
- Centro NanoMat/CryssMat & Física, DETEMA, Facultad de Química, Universidad de la República (UdelaR), Montevideo, C.P., 11800, Uruguay
| | - Mariano Romero
- Centro NanoMat/CryssMat & Física, DETEMA, Facultad de Química, Universidad de la República (UdelaR), Montevideo, C.P., 11800, Uruguay.
| | - Ricardo Faccio
- Centro NanoMat/CryssMat & Física, DETEMA, Facultad de Química, Universidad de la República (UdelaR), Montevideo, C.P., 11800, Uruguay.
| | - Milton A Tumelero
- Instituto de Física, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, C.P., 91501-970, Brazil
| | - Alvaro W Mombrú
- Centro NanoMat/CryssMat & Física, DETEMA, Facultad de Química, Universidad de la República (UdelaR), Montevideo, C.P., 11800, Uruguay.
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Yan JM, Xu ZX, Chen TW, Xu M, Zhang C, Zhao XW, Liu F, Guo L, Yan SY, Gao GY, Wang FF, Zhang JX, Dong SN, Li XG, Luo HS, Zhao W, Zheng RK. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi 2Te 3 Topological Insulator Thin Films Grown on Pb(Mg 1/3Nb 2/3)O 3-PbTiO 3 Single Crystals. ACS Appl Mater Interfaces 2019; 11:9548-9556. [PMID: 30724082 DOI: 10.1021/acsami.8b20406] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single-phase (00 l)-oriented Bi2Te3 topological insulator thin films have been deposited on (111)-oriented ferroelectric 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) single-crystal substrates. Taking advantage of the nonvolatile polarization charges induced by the polarization direction switching of PMN-PT substrates at room temperature, the carrier density, Fermi level, magnetoconductance, conductance channel, phase coherence length, and quantum corrections to the conductance can be in situ modulated in a reversible and nonvolatile manner. Specifically, upon the polarization switching from the positively poled Pr+ state (i.e., polarization direction points to the film) to the negatively poled Pr- (i.e., polarization direction points to the bottom electrode) state, both the electron carrier density and the Fermi wave vector decrease significantly, reflecting a shift of the Fermi level toward the Dirac point. The polarization switching from Pr+ to Pr- also results in significant increase of the conductance channel α from -0.15 to -0.3 and a decrease of the phase coherence length from 200 to 80 nm at T = 2 K as well as a reduction of the electron-electron interaction. All these results demonstrate that electric-voltage control of physical properties using PMN-PT as both substrates and gating materials provides a simple and a straightforward approach to realize reversible and nonvolatile tuning of electronic properties of topological thin films and may be further extended to study carrier density-related quantum transport properties of other quantum matter.
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Affiliation(s)
- Jian-Min Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Zhi-Xue Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Ting-Wei Chen
- School of Materials Science and Engineering , Nanchang University, and Jiangxi Engineering Laboratory for Advanced Functional Thin Films , Nanchang 330031 , China
| | - Meng Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Chao Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Xu-Wen Zhao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Fei Liu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Lei Guo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Shu-Ying Yan
- Department of Physics , Beijing Normal University , Beijing 100875 , China
| | - Guan-Yin Gao
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Fei-Fei Wang
- Key Laboratory of Optoelectronic Material and Device, Department of Physics , Shanghai Normal University , Shanghai 200234 , China
| | - Jin-Xing Zhang
- Department of Physics , Beijing Normal University , Beijing 100875 , China
| | - Si-Ning Dong
- Department of Physics , University of Notre Dame , Notre Dame , Indiana 46556 , United States
| | - Xiao-Guang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Hao-Su Luo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Weiyao Zhao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
- ISEM, Innovation Campus , University of Wollongong , Wollongong , New South Wales 2500 , Australia
| | - Ren-Kui Zheng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
- School of Materials Science and Engineering , Nanchang University, and Jiangxi Engineering Laboratory for Advanced Functional Thin Films , Nanchang 330031 , China
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Xu ZX, Yan JM, Xu M, Guo L, Chen TW, Gao GY, Dong SN, Zheng M, Zhang JX, Wang Y, Li XG, Luo HS, Zheng RK. Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties. ACS Appl Mater Interfaces 2018; 10:32809-32817. [PMID: 30156403 DOI: 10.1021/acsami.8b09170] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the fabrication of 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO2) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∼330%) of the SnO2:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO2:Co films. Furthermore, we realized multilevel resistance states of the SnO2:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.
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Affiliation(s)
- Zhi-Xue Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
- University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jian-Min Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Meng Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Lei Guo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Ting-Wei Chen
- School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China
| | - Guan-Yin Gao
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Si-Ning Dong
- Department of Physics , University of Notre Dame , Notre Dame , Indiana 46556 , United States
| | - Ming Zheng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Jin-Xing Zhang
- Department of Physics , Beijing Normal University , Beijing 100875 , China
| | - Yu Wang
- School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China
| | - Xiao-Guang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Hao-Su Luo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Ren-Kui Zheng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
- School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China
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Datta S, Cai Y, Yudhistira I, Zeng Z, Zhang YW, Zhang H, Adam S, Wu J, Loh KP. Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition. Nat Commun 2017; 8:677. [PMID: 28939885 DOI: 10.1038/s41467-017-00727-w] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2016] [Accepted: 07/24/2017] [Indexed: 11/25/2022] Open
Abstract
Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets. Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS2 couples to their electronic structure, affecting magnetotransport.
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Sapkota KR, Chen W, Maloney FS, Poudyal U, Wang W. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires. Sci Rep 2016; 6:35036. [PMID: 27739442 PMCID: PMC5064367 DOI: 10.1038/srep35036] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2016] [Accepted: 09/23/2016] [Indexed: 11/22/2022] Open
Abstract
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.
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Affiliation(s)
- Keshab R. Sapkota
- Department of Physics and Astronomy, University of Wyoming, Laramie WY, USA
| | - Weimin Chen
- Department of Physics and Astronomy, University of Wyoming, Laramie WY, USA
| | - F. Scott Maloney
- Department of Physics and Astronomy, University of Wyoming, Laramie WY, USA
| | - Uma Poudyal
- Department of Physics and Astronomy, University of Wyoming, Laramie WY, USA
| | - Wenyong Wang
- Department of Physics and Astronomy, University of Wyoming, Laramie WY, USA
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Shao Q, Liao F, Ruotolo A. Magnetic-Polaron-Induced Enhancement of Surface Raman Scattering. Sci Rep 2016; 6:19025. [PMID: 26754049 DOI: 10.1038/srep19025] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2015] [Accepted: 12/02/2015] [Indexed: 11/26/2022] Open
Abstract
The studies of the effects of magnetic field on surface enhanced Raman scattering (SERS) have been so far limited to the case of ferromagnetic/noble-metal, core/shell nano-particles, where the influence was always found to be negative. In this work, we investigate the influence of magnetic field on a diluted magnetic semiconductor/metal SERS system. Guided by three dimensional finite-difference time-domain simulations, a high efficient SERS substrate was obtained by diluting Mn into Au-capped ZnO, which results in an increase of the dielectric constant and, therefore, an enhancement of Raman signals. More remarkably, an increase of intensities as well as a reduction of the relative standard deviation (RSD) of Raman signals have been observed as a function of the external magnetic strength. We ascribe these positive influences to magnetic-field induced nucleation of bound magnetic polarons in the Mn doped ZnO. The combination of diluted magnetic semiconductors and SERS may open a new avenue for future magneto-optical applications.
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