Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor

We investigate the effect of applied gate and drain voltages on the charge transport properties in a zinc oxide (ZnO) nanowire field effect transistor (FET) through temperature- and voltage-dependent measurements. Since the FET based on nanowires is one of the fundamental building blocks in potential nanoelectronic applications, it is important to understand the transport properties relevant to the variation in electrically applied parameters for devices based on nanowires with a large surface-to-volume ratio. In this work, the threshold voltage shift due to a drain-induced barrier-lowering (DIBL) effect was observed using a Y-function method. From temperature-dependent current-voltage (I-V) analyses of the fabricated ZnO nanowire FET, it is found that space charge-limited conduction (SCLC) mechanism is dominant at low temperatures and low voltages; in particular, variable-range hopping dominates the conduction in the temperature regime from 4 to 100 K, whereas in the high-temperature regime (150–300 K), the thermal activation transport is dominant, diminishing the SCLC effect. These results are discussed and explained in terms of the exponential distribution and applied voltage-induced variation in the charge trap states at the band edge.

Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts

Surface states that induce depletion regions are commonly believed to control the transport of charged carriers through semiconductor nanowires. However, direct, localized optical, and electrical measurements of ZnO nanowires show that native point defects inside the nanowire bulk and created at metal-semiconductor interfaces are electrically active and play a dominant role electronically, altering the semiconductor doping, the carrier density along the wire length, and the injection of charge into the wire. We used depth-resolved cathodoluminescence spectroscopy to measure the densities of multiple point defects inside ZnO nanowires, substitutional Cu on Zn sites, zinc vacancy, and oxygen vacancy defects, showing that their densities varied strongly both radially and lengthwise for tapered wires. These defect profiles and their variation with wire diameter produce trap-assisted tunneling and acceptor trapping of free carriers, the balance of which determines the low contact resistivity (2.6 × 10^-3 Ω·cm^-2) ohmic, Schottky (Φ ≥ 0.35 eV) or blocking nature of Pt contacts to a single nano/microwire. We show how these defects can now be manipulated by ion beam methods and nanowire design, opening new avenues to control nanowire charge injection and transport.

A Self-Powered Fast-Response Ultraviolet Detector of p-n Homojunction Assembled from Two ZnO-Based Nanowires

ABSTRACT

Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p-n homojunction ultraviolet detector (UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of -0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices.

GRAPHICAL ABSTRACT

A self-powered ZnO/Sb-doped ZnO nanowire p-n homojunction ultraviolet detector (UVD) was fabricated by using a novel micro/nano-assembling method with bottom-up approach. At reverse bias of -0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5, and the rise time and decay time of the UVD were as short as 30 ms.

Growth Conditions Control the Elastic and Electrical Properties of ZnO Nanowires

Great efforts have been made to synthesize ZnO nanowires (NWs) as building blocks for a broad range of applications because of their unique mechanical and mechanoelectrical properties. However, little attention has been paid to the correlation between the NWs synthesis condition and these properties. Here we demonstrate that by slightly adjusting the NW growth conditions, the cross-sectional shape of the NWs can be tuned from hexagonal to circular. Room temperature photoluminescence spectra suggested that NWs with cylindrical geometry have a higher density of point defects. In situ transmission electron microscopy (TEM) uniaxial tensile-electrical coupling tests revealed that for similar diameter, the Young's modulus and electrical resistivity of hexagonal NWs is always larger than that of cylindrical NWs, whereas the piezoresistive coefficient of cylindrical NWs is generally higher. With decreasing diameter, the Young's modulus and the resistivity of NWs increase, whereas their piezoresistive coefficient decreases, regardless of the sample geometry. Our findings shed new light on understanding and advancing the performance of ZnO-NW-based devices through optimizing the synthesis conditions of the NWs.

Scattering Intensity and Directionality Probed Along Individual Zinc Oxide Nanorods with Precisely Controlled Light Polarization and Nanorod Orientation

We elucidated the light-matter interaction of individual ZnO NRs with a monochromatic beam of linearly polarized light that scatters elastically from the ZnO NRs by performing forward scattering and back-aperture imaging in a dark-field setting. We precisely controlled the electric field vector of the incident light and the NR orientation within the plane of light interaction during both modes of measurement, and spatially resolved the scattering response from different interaction points along the NR long axis. We then discerned, for the first time, the effects of light polarization, analyzer angle, and NR orientation on the intensity and directionality of the optical responses both qualitatively and quantitatively along the length of the single ZnO NRs. We identified distinctive scattering profiles from individual ZnO NRs subject to incident light polarization with controlled NR orientation from the forward dark-field scattering and back-aperture imaging modes. The fundamental light interaction behavior of ZnO NRs is likely to govern their functional outcomes in photonics, optoelectronics, and sensor devices. Hence, our efforts provided much needed insight into unique optical responses from individual 1D ZnO nanomaterials, which could be highly beneficial in developing next-generation optoelectronic systems and optical biodetectors with improved device efficiency and sensitivity.

Doped ZnO 1D nanostructures: synthesis, properties, and photodetector application

In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.

Study the effect of functional molecule types on the surface properties of ZnO nanorods

To better understand the effect of functional molecule types to the surface properties of ZnO nanorods, three organic molecules – ethylenediamine, sodium citrate and butanethiol were used for the surface modification of ZnO nanorods.

Ascorbic-acid-assisted growth of high quality M@ZnO: a growth mechanism and kinetics study

We present a general route for synthesizing M@ZnO nanoparticles (NPs) by using ascorbic acid (AA) to induce deposition of ZnO on various shaped and structured cationic-surfactant-capped NP surfaces (noble, magnetic, semiconductor, rod-like, spherical, cubic, dendrite, alloy, core@shell). The results show that the complexing (AA and Zn(2+)) and cooperative effects (AA and CTAB) play important roles in the formation of polycrystalline ZnO shells. Besides, the growth kinetics of M@ZnO was systematically studied. It was found that the slow growth rate favors the successful formation of uniform core@ZnO NPs with relatively loose shells. An appropriate growth rate allows achieving high quality M@ZnO NPs with dense shells. However, very fast growth causes significant additional nucleation and the formation of pure ZnO NPs. This general method is suitable for preparing M@ZnO using seed NPs prepared in both water and organic phases. It might be an alternative route for functionalizing NPs for bioapplications (ZnO is biocompatible), modulating material properties as designed, or synthesizing template materials for building other nanostructures.

Enhanced electrochemical performance of ZnO-loaded/porous carbon composite as anode materials for lithium ion batteries

ZnO-loaded/porous carbon (PC) composites with different ZnO loading amounts are first synthesized via a facile solvothermal method and evaluated for anode materials of lithium ion batteries. The architecture and the electrochemical performance of the as-prepared composites are investigated through structure characterization and galvanostatic charge/discharge test. The ZnO-loaded/PC composites possess a rich porous structure with well-distributed ZnO particles (size range: 30-100 nm) in the PC host. The one with 54 wt % ZnO loading contents exhibits a high reversible capacity of 653.7 mA h g(-1) after 100 cycles. In particular, a capacity of 496.8 mA h g(-1) can be reversibly obtained when cycled at 1000 mA g(-1). The superior lithium storage properties of the composite may be attributed to its nanoporous structure together with an interconnected network. The modified interfacial reaction kinetics of the composite promotes the intercalation/deintercalation of lithium ions and the charge transfer on the electrode. As a result, the enhanced capacity of the composite electrode is achieved, as well as its high rate capability.