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Jafari Jam R, Beech JP, Zeng X, Johansson J, Samuelson L, Pettersson H, Borgström MT. Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse. Nanotechnology 2020; 31:204002. [PMID: 32106108 DOI: 10.1088/1361-6528/ab7680] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p-type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching. Thermal evaporation was used to define Au seed particles. Metalorganic vapour phase epitaxy was used to grow AlAs-GaAs NWs in the vapour-liquid-solid growth mode. The yield of synthesised nanowires, compared to the number expected from the patterned template, was more than 80%. After growth, the nanowires were embedded in a polymer and mechanically removed from the parent substrate. The parent substrate was then immersed in an HCl:H2O (1:1) mixture to dissolve the remaining stub of the sacrificial AlAs segment. The pattern fidelity was preserved after peeling off the nanowires and cleaning, and the semiconductor surface was flat and ready for reuse. Au seed particles were then deposited on the substrate by use of pulse electrodeposition, which was selective to the openings in the growth template, and then nanowires were regrown. The yield of regrowth was less optimal compared to the first growth but the pattern was preserved. Our results show a promising approach to reduce the final cost of III-V nanowire based solar cells.
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Affiliation(s)
- R Jafari Jam
- Division of Solid State Physics and NanoLund, Lund University, Box 118, SE-211 00, Lund, Sweden
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2
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Espinet-Gonzalez P, Barrigón E, Otnes G, Vescovi G, Mann C, France RM, Welch AJ, Hunt MS, Walker D, Kelzenberg MD, Åberg I, Borgström MT, Samuelson L, Atwater HA. Radiation Tolerant Nanowire Array Solar Cells. ACS Nano 2019; 13:12860-12869. [PMID: 31626535 DOI: 10.1021/acsnano.9b05213] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Space power systems require photovoltaics that are lightweight, efficient, reliable, and capable of operating for years or decades in space environment. Current solar panels use planar multijunction, III-V based solar cells with very high efficiency, but their specific power (power to weight ratio) is limited by the added mass of radiation shielding (e.g., coverglass) required to protect the cells from the high-energy particle radiation that occurs in space. Here, we demonstrate that III-V nanowire-array solar cells have dramatically superior radiation performance relative to planar solar cell designs and show this for multiple cell geometries and materials, including GaAs and InP. Nanowire cells exhibit damage thresholds ranging from ∼10-40 times higher than planar control solar cells when subjected to irradiation by 100-350 keV protons and 1 MeV electrons. Using Monte Carlo simulations, we show that this improvement is due in part to a reduction in the displacement density within the wires arising from their nanoscale dimensions. Radiation tolerance, combined with the efficient optical absorption and the improving performance of nanowire photovoltaics, indicates that nanowire arrays could provide a pathway to realize high-specific-power, substrate-free, III-V space solar cells with substantially reduced shielding requirements. More broadly, the exceptional reduction in radiation damage suggests that nanowire architectures may be useful in improving the radiation tolerance of other electronic and optoelectronic devices.
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Affiliation(s)
- Pilar Espinet-Gonzalez
- Department of Applied Physics and Materials Science , California Institute of Technology , Pasadena , California 91125 , United States
| | - Enrique Barrigón
- Division of Solid State Physics , Lund University , Lund , SE-221 00 , Sweden
| | - Gaute Otnes
- Division of Solid State Physics , Lund University , Lund , SE-221 00 , Sweden
| | | | - Colin Mann
- The Aerospace Corporation , El Segundo , California 90245-4609 , United States
| | - Ryan M France
- National Renewable Energy Laboratory , Golden , Colorado 80401 , United States
| | - Alex J Welch
- Department of Applied Physics and Materials Science , California Institute of Technology , Pasadena , California 91125 , United States
| | - Matthew S Hunt
- The Kavli Nanoscience Institute , California Institute of Technology , Pasadena , California 91125 , United States
| | - Don Walker
- The Aerospace Corporation , El Segundo , California 90245-4609 , United States
| | - Michael D Kelzenberg
- Department of Applied Physics and Materials Science , California Institute of Technology , Pasadena , California 91125 , United States
| | | | - Magnus T Borgström
- Division of Solid State Physics , Lund University , Lund , SE-221 00 , Sweden
| | - Lars Samuelson
- Division of Solid State Physics , Lund University , Lund , SE-221 00 , Sweden
- Sol Voltaics AB , Lund , SE-223 63 , Sweden
| | - Harry A Atwater
- Department of Applied Physics and Materials Science , California Institute of Technology , Pasadena , California 91125 , United States
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Zhang Z, Lin P, Liao Q, Kang Z, Si H, Zhang Y. Graphene-Based Mixed-Dimensional van der Waals Heterostructures for Advanced Optoelectronics. Adv Mater 2019; 31:e1806411. [PMID: 31503377 DOI: 10.1002/adma.201806411] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2018] [Revised: 04/20/2019] [Indexed: 05/07/2023]
Abstract
Although the library of 2D atomic crystals has greatly expanded over the past years, research into graphene is still one of the focuses for both academia and business communities. Due to its unique electronic structure, graphene offers a powerful platform for exploration of novel 2D physics, and has significantly impacted a wide range of fields including energy, electronics, and photonics. Moreover, the versatility of combining graphene with other functional components provides a powerful strategy to design artificial van der Waals (vdWs) heterostructures. Aside from the stacked 2D-2D vdWs heterostructure, in a broad sense graphene can hybridize with other non-2D materials through vdWs interactions. Such mixed-dimensional vdWs (MDWs) structures allow considerable freedom in material selection and help to harness the synergistic advantage of different dimensionalities, which may compensate for graphene's intrinsic shortcomings. A succinct overview of representative advances in graphene-based MDWs heterostructures is presented, ranging from assembly strategies to applications in optoelectronics. The scientific merit and application advantages of these hybrid structures are particularly emphasized. Moreover, considering possible breakthroughs in new physics and application potential on an industrial scale, the challenges and future prospects in this active research field are highlighted.
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Affiliation(s)
- Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Pei Lin
- Department of Physics and Engineering, Zheng Zhou University, Zhengzhou, Henan, 450001, P. R. China
| | - Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Haonan Si
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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Krizek F, Kanne T, Razmadze D, Johnson E, Nygård J, Marcus CM, Krogstrup P. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis. Nano Lett 2017; 17:6090-6096. [PMID: 28895746 DOI: 10.1021/acs.nanolett.7b02604] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism. Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show that all three types of nanocrosses can be transferred undamaged to arbitrary substrates, which allows for structural, compositional, and electrical characterization. We further demonstrate the potential for synthesis of as-grown nanowire networks and for using nanowires as shadow masks for in situ fabricated junctions in radial nanowire heterostructures.
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Affiliation(s)
- Filip Krizek
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Davydas Razmadze
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
- Department of Wind Energy, Technical University of Denmark , DTU Risø Campus, 4000 Roskilde, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Charles M Marcus
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
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Anttu N, Dagytė V, Zeng X, Otnes G, Borgström M. Absorption and transmission of light in III-V nanowire arrays for tandem solar cell applications. Nanotechnology 2017; 28:205203. [PMID: 28436381 DOI: 10.1088/1361-6528/aa6aee] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
III-V semiconductor nanowires are a platform for next-generation photovoltaics. An interesting research direction is to embed a nanowire array in a transparent polymer, either to act as a stand-alone flexible solar cell, or to be stacked on top of a conventional Si bottom cell to create a tandem structure. To optimize the tandem cell performance, high energy photons should be absorbed in the nanowires whereas low energy photons should be transmitted to and absorbed in the Si cell. Here, through optical measurements on 1.95 eV bandgap GaInP nanowire arrays embedded in a polymer membrane, we identify two mechanisms that could be detrimental for the performance of the tandem cell. First, the Au particles used in the nanowire synthesis can absorb >50% of the low-energy photons, leading to a <40% transmittance, even though the Au particles cover <15% of the surface area. The removal of the Au particles can recover the transmission of low energy photons to >80%. Second, after the removal of the Au particles, a 40% reflectance peak shows up due to resonant back-scattering of light from in-plane waveguide modes. To avoid the excitation of these optical modes in the nanowire array, we propose to limit the pitch of the nanowire array.
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Affiliation(s)
- Nicklas Anttu
- Division of Solid State Physics and NanoLund, Lund University, Box 118, SE-22100 Lund, Sweden
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Cavalli A, Cui Y, Kölling S, Verheijen MA, Plissard SR, Wang J, Koenraad PM, Haverkort JEM, Bakkers EPAM. Influence of growth conditions on the performance of InP nanowire solar cells. Nanotechnology 2016; 27:454003. [PMID: 27727149 DOI: 10.1088/0957-4484/27/45/454003] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.
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Affiliation(s)
- Alessandro Cavalli
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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9
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Abstract
Nanoimprint assisted transfer method was used to make vertically aligned ZnO nanorod electronic devices. The method relies on the hot nanoimprint process performed in the transfer process, which enables ZnO nanorod arrays to easily penetrate into the PMMA transfer layers.
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Affiliation(s)
- Shujie Wang
- Key Lab for Special Functional Materials of Ministry of Education
- Collaborative Innovation Center of Nano Functional Materials and Applications
- Henan University
- Kaifeng
- People's Republic of China
| | - Youzhen Yang
- Key Lab for Special Functional Materials of Ministry of Education
- Collaborative Innovation Center of Nano Functional Materials and Applications
- Henan University
- Kaifeng
- People's Republic of China
| | - Jing Chai
- Key Lab for Special Functional Materials of Ministry of Education
- Collaborative Innovation Center of Nano Functional Materials and Applications
- Henan University
- Kaifeng
- People's Republic of China
| | - Ke Zhu
- Key Lab for Special Functional Materials of Ministry of Education
- Collaborative Innovation Center of Nano Functional Materials and Applications
- Henan University
- Kaifeng
- People's Republic of China
| | - Xiaohong Jiang
- Key Lab for Special Functional Materials of Ministry of Education
- Collaborative Innovation Center of Nano Functional Materials and Applications
- Henan University
- Kaifeng
- People's Republic of China
| | - Zuliang Du
- Key Lab for Special Functional Materials of Ministry of Education
- Collaborative Innovation Center of Nano Functional Materials and Applications
- Henan University
- Kaifeng
- People's Republic of China
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Standing A, Assali S, Gao L, Verheijen MA, van Dam D, Cui Y, Notten PHL, Haverkort JEM, Bakkers EPAM. Efficient water reduction with gallium phosphide nanowires. Nat Commun 2015; 6:7824. [PMID: 26183949 PMCID: PMC4518318 DOI: 10.1038/ncomms8824] [Citation(s) in RCA: 109] [Impact Index Per Article: 12.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2015] [Accepted: 06/16/2015] [Indexed: 12/23/2022] Open
Abstract
Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. Photoelectrochemical hydrogen production from solar energy and water is one possible sustainable fuel option. Here, the authors fabricate wurtzite gallium phosphide nanowires, with a direct bandgap, allowing for enhanced optical absorption; demonstrating an enhancement in the water reduction efficiency.
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Affiliation(s)
- Anthony Standing
- 1] Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands [2] BioSolar Cells, P.O. Box 98, 6700 AB Wageningen, The Netherlands
| | - Simone Assali
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Lu Gao
- Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Marcel A Verheijen
- 1] Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands [2] Philips Innovation Services Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands
| | - Dick van Dam
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Yingchao Cui
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Peter H L Notten
- 1] Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands [2] Forschungszentrum Jülich (IEK-9), D-52425 Jülich, Germany
| | - Jos E M Haverkort
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- 1] Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands [2] Kavli Institute of Nanoscience Delft, Delft University of Technology, 2628 CJ Delft, The Netherlands
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Gao L, Cui Y, Wang J, Cavalli A, Standing A, Vu TTT, Verheijen MA, Haverkort JEM, Bakkers EPAM, Notten PHL. Photoelectrochemical hydrogen production on InP nanowire arrays with molybdenum sulfide electrocatalysts. Nano Lett 2014; 14:3715-3719. [PMID: 24875657 DOI: 10.1021/nl404540f] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Semiconductor nanowire arrays are expected to be advantageous for photoelectrochemical energy conversion due to their reduced materials consumption. In addition, with the nanowire geometry the length scales for light absorption and carrier separation are decoupled, which should suppress bulk recombination. Here, we use vertically aligned p-type InP nanowire arrays, coated with noble-metal-free MoS3 nanoparticles, as the cathode for photoelectrochemical hydrogen production from water. We demonstrate a photocathode efficiency of 6.4% under Air Mass 1.5G illumination with only 3% of the surface area covered by nanowires.
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Affiliation(s)
- Lu Gao
- Department of Chemical Engineering and Chemistry and ‡Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands
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Assali S, Zardo I, Plissard S, Kriegner D, Verheijen MA, Bauer G, Meijerink A, Belabbes A, Bechstedt F, Haverkort JEM, Bakkers EPAM. Direct band gap wurtzite gallium phosphide nanowires. Nano Lett 2013; 13:1559-63. [PMID: 23464761 PMCID: PMC3624814 DOI: 10.1021/nl304723c] [Citation(s) in RCA: 39] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2012] [Revised: 02/20/2013] [Indexed: 05/27/2023]
Abstract
The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555-690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality.
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Affiliation(s)
- S. Assali
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven,
The Netherlands
| | - I. Zardo
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven,
The Netherlands
| | - S. Plissard
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven,
The Netherlands
| | - D. Kriegner
- Institute
of Semiconductor and
Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
| | - M. A. Verheijen
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven,
The Netherlands
- Philips Innovation
Services Eindhoven, High Tech Campus 11, 5656AE Eindhoven,
The Netherlands
| | - G. Bauer
- Institute
of Semiconductor and
Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
| | - A. Meijerink
- Debye Institute, Utrecht University, Princetonplein 1, 3500TA Utrecht,
The Netherlands
| | - A. Belabbes
- Institut
für Festkörpertheorie
und −optik, Friedrich Schiller Universität, 07743 Jena, Germany
| | - F. Bechstedt
- Institut
für Festkörpertheorie
und −optik, Friedrich Schiller Universität, 07743 Jena, Germany
| | - J. E. M. Haverkort
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven,
The Netherlands
| | - E. P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven,
The Netherlands
- Kavli
Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The
Netherlands
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